K4B1G0446G-BCH9 [SAMSUNG]

DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78;
K4B1G0446G-BCH9
型号: K4B1G0446G-BCH9
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78

时钟 动态存储器 双倍数据速率 内存集成电路
文件: 总64页 (文件大小:1859K)
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K4B1G0446G-BCH9T

DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78

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0 SAMSUNG

K4B1G0446G-BCK0

1Gb G-die DDR3 SDRAM

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17 SAMSUNG

K4B1G0446G-BCMA

1Gb G-die DDR3 SDRAM

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41 SAMSUNG

K4B1G0846C-CF8

1Gb C-die DDR3 SDRAM Specification

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48 SAMSUNG

K4B1G0846C-ZCF7

1Gb C-die DDR3 SDRAM Specification

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42 SAMSUNG

K4B1G0846C-ZCG9

1Gb C-die DDR3 SDRAM Specification

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13 SAMSUNG

K4B1G0846C-ZCG90

DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA94, ROHS COMPLIANT, FBGA-94

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0 SAMSUNG

K4B1G0846D

1Gb D-die DDR3 SDRAM Specification

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32 SAMSUNG

K4B1G0846D-HCF7

1Gb D-die DDR3 SDRAM Specification

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24 SAMSUNG

K4B1G0846D-HCF8

1Gb D-die DDR3 SDRAM Specification

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22 SAMSUNG

K4B1G0846D-HCH9

1Gb D-die DDR3 SDRAM Specification

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20 SAMSUNG

K4B1G0846D-HCH90

DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA82, ROHS COMPLIANT, FBGA-82

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0 SAMSUNG

K4B1G0846E

DDR3 SDRAM Memory

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230 SAMSUNG

K4B1G0846E

Consumer Memory

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137 SAMSUNG

K4B1G0846E-HCF8

DDR DRAM, 128MX8, 0.15ns, CMOS, PBGA78,

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1 SAMSUNG