K4B2G0446D-HCK0 [SAMSUNG]

DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78,;

K4B2G0446D-HCK0


型号：	K4B2G0446D-HCK0
厂家：	SAMSUNG SEMICONDUCTOR
描述：	DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78, 时钟动态存储器双倍数据速率内存集成电路
文件：	总65页 (文件大小：1818K)
下载：	下载PDF数据表文档文件

K4B2G0446D-HCK0T

DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78,

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0 SAMSUNG

K4B2G0446D-HYF8

2Gb D-die DDR3L SDRAM

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60 SAMSUNG

K4B2G0446D-HYF80

DDR DRAM, 512MX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78

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0 SAMSUNG

K4B2G0446D-HYH9

2Gb D-die DDR3L SDRAM

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116 SAMSUNG

K4B2G0446D-HYH90

DDR DRAM, 512MX4, 0.25ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78

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0 SAMSUNG

K4B2G0446D-HYK0

2Gb D-die DDR3L SDRAM

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45 SAMSUNG

K4B2G0446E

DDR3 SDRAM Memory

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14 SAMSUNG

K4B2G0446E-BCH9T

DDR DRAM, 512MX4, 0.255ns, CMOS, PBGA78,

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0 SAMSUNG

K4B2G0446E-BYH90

DDR DRAM, 512MX4, 0.255ns, CMOS, PBGA78,

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1 SAMSUNG

K4B2G0446E-BYH9T

DDR DRAM, 512MX4, 0.255ns, CMOS, PBGA78,

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0 SAMSUNG

K4B2G0446E-MCF7T

DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA78,

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0 SAMSUNG

K4B2G0446E-MCF8T

DDR DRAM, 512MX4, 0.3ns, CMOS, PBGA78,

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0 SAMSUNG

K4B2G0846A

DDR3 SDRAM Memory

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69 SAMSUNG

K4B2G0846B

DDR3 SDRAM Memory

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110 SAMSUNG

K4B2G0846B

Consumer Memory

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145 SAMSUNG

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