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K4E641612D [SAMSUNG]

CMOS DRAM; CMOS DRAM
K4E641612D
型号： K4E641612D
厂家： SAMSUNG    SAMSUNG
描述：

CMOS DRAM
CMOS DRAM

动态存储器
文件： 总36页 (文件大小：398K)
中文：  中文翻译
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相关型号：

K4E641612D-TC50

 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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SAMSUNG

K4E641612D-TC60

 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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SAMSUNG

K4E641612D-TL45

 EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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SAMSUNG

K4E641612D-TL60

 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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SAMSUNG

K4E641612E-TI450

 EDO DRAM, 4MX16, 45ns, CMOS, PDSO50,

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SAMSUNG

K4E641612E-TI50T

 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50,

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SAMSUNG

K4E641612E-TI60

 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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SAMSUNG

K4E641612E-TI600

 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50,

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SAMSUNG

K4E641612E-TL50

 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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SAMSUNG

K4E641612E-TL60

 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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SAMSUNG

K4E641612E-TP45

 EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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SAMSUNG

K4E641612E-TP450

 EDO DRAM, 4MX16, 45ns, CMOS, PDSO50,

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SAMSUNG

K4E641612E-TP45T

 EDO DRAM, 4MX16, 45ns, CMOS, PDSO50,

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SAMSUNG

K4E641612E-TP500

 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50,

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SAMSUNG

K4E641612E-TP50T

 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50,

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SAMSUNG

K4E641612E-TP600

 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50,

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SAMSUNG

K4E641612E-TP60T

 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50,

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SAMSUNG

K4E660411B-TC450

 EDO DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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SAMSUNG

K4E660411B-TC500

 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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K4E660411D

 16M x 4bit CMOS Dynamic RAM with Extended Data Out

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SAMSUNG
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