K4F660412E-JP45 [SAMSUNG]
Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32;型号: | K4F660412E-JP45 |
厂家: | SAMSUNG |
描述: | Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 动态存储器 光电二极管 |
文件: | 总20页 (文件大小:171K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 16Mx4 Fast Page Mode DRAM family is fabricated using Samsung¢s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Fast Page Mode operation
• Part Identification
- K4F660412E-JI/P(3.3V, 8K Ref., SOJ)
- K4F640412E-JI/P(3.3V, 4K Ref., SOJ)
- K4F660412E-TI/P(3.3V, 8K Ref., TSOP)
- K4F640412E-TI/P(3.3V, 4K Ref., TSOP)
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Active Power Dissipation
Unit :mW
4K
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V ±0.3V power supply
Speed
-45
8K
324
288
252
432
396
360
•
Industrial Temperature operating ( -40~85°C )
-50
-60
• Refresh Cycles
FUNCTIONAL BLOCK DIAGRAM
Part
NO.
Refresh
cycle
Refresh time
Normal
L-ver
K4F660412E*
K4F640412E
8K
4K
RAS
CAS
W
Vcc
Vss
64ms
128ms
Control
Clocks
VBB Generator
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS -before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Row Decoder
Refresh Timer
Refresh Control
Data in
Buffer
Memory Array
16,777,216 x 4
Cells
DQ0
to
DQ3
Refresh Counter
Row Address Buffer
Col. Address Buffer
• Performance Range
Speed
-45
tRAC
45ns
50ns
60ns
tCAC
12ns
13ns
15ns
tRC
80ns
90ns
110ns
tPC
Data out
Buffer
A0~A12
(A0~A11)*1
OE
31ns
35ns
40ns
A0~A10
(A0~A11)*1
Column Decoder
-50
-60
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
PIN CONFIGURATION (Top Views)
• K4F660412E-T
• K4F640412E-T
• K4F660412E-J
• K4F640412E-J
VCC
DQ0
DQ1
N.C
N.C
N.C
N.C
W
1
2
3
4
5
6
7
8
9
32
VSS
VCC
DQ0
DQ1
N.C
N.C
N.C
N.C
W
RAS
A0
A1
A2
A3
1
2
3
4
5
6
7
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VSS
31 DQ3
30 DQ2
29 N.C
28 N.C
27 N.C
26 CAS
25 OE
24 A12(N.C)*
23 A11
22 A10
21 A9
DQ3
DQ2
N.C
N.C
N.C
CAS
OE
A12(N.C)*
A11
A10
A9
RAS
9
A0 10
A1 11
A2 12
A3 13
A4 14
A5 15
10
11
12
13
14
15
16
20 A8
19 A7
18 A6
17
A8
A7
A6
VSS
A4
A5
VCC
VCC
16
VSS
(J : 400mil SOJ)
(T : 400mil TSOP(II))
* (N.C) : N.C for 4K Refresh product
Pin Name
A0 - A12
A0 - A11
DQ0 - 3
VSS
Pin Function
Address Inputs(8K Product)
Address Inputs(4K Product)
Data In/Out
Ground
RAS
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Power(+3.3V)
CAS
W
OE
VCC
N.C
No Connection
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Units
V
Voltage on any pin relative to VSS
Voltage on VCC supply relative to V SS
Storage Temperature
VIN, VOUT
VCC
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
1
V
Tstg
°C
Power Dissipation
PD
W
Short Circuit Output Current
IOS Address
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= -40 to 85°C)
Parameter
Supply Voltage
Symbol
VCC
VSS
Min
3.0
0
Typ
Max
3.6
0
Units
3.3
V
V
V
V
Ground
0
-
*1
Input High Voltage
Input Low Voltage
VIH
2.0
Vcc+0.3
0.8
*2
VIL
-
-0.3
*1 : Vcc+1.3V at pulse width£15ns which is measured at VCC
*2 : -1.3 at pulse width£15ns which is measured at V SS
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0£VIN£VCC+0.3V,
all other pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V£VOUT£VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
Output Low Voltage Level(IOL=2mA)
VOH
VOL
2.4
-
-
V
V
0.4
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Max
Symbol
Power
Speed
Units
K4F660412E
K4F640412E
-45
-50
-60
90
80
70
120
110
100
mA
mA
mA
ICC1
ICC2
ICC3
Don¢t care
Normal
L
1
1
1
1
mA
mA
Don¢t care
-45
-50
-60
90
80
70
120
110
100
mA
mA
mA
Don¢t care
Don¢t care
-45
-50
-60
70
60
50
70
60
50
mA
mA
mA
ICC4
ICC5
ICC6
Normal
L
0.5
200
0.5
200
mA
uA
Don¢t care
-45
-50
-60
120
110
100
120
110
100
mA
mA
mA
Don¢t care
ICC7
ICCS
L
L
Don¢t care
Don¢t care
350
350
350
350
uA
uA
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=V IH)
ICC3* : RAS-only Refresh Current (CAS =VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL , CAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=V CC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V,
W, OE=VIH, Address=Don¢t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS =VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
CAPACITANCE (TA=25°C, VCC=3.3V, f=1MHz)
Parameter
Input capacitance [A0 ~ A12]
Symbol
CIN1
Min
Max
Units
pF
-
-
-
5
7
7
Input capacitance [RAS, CAS , W, OE]
Output capacitance [DQ0 - DQ3]
CIN2
pF
CDQ
pF
AC CHARACTERISTICS (-40°C£TA£85°C, See note 2)
Test condition : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
-45
-50
-60
Parameter
Symbol
Units
Note
Min
80
Max
Min
90
Max
Min
110
153
Max
Random read or write cycle time
Read-modify-write cycle time
Access time fromRAS
tRC
ns
ns
115
133
tRWC
tRAC
tCAC
tAA
45
12
23
50
13
25
60
15
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3,4,10
3,4,5
3,10
3
Access time fromCAS
Access time from column address
CAS to output in Low-Z
0
0
0
0
tCLZ
tOFF
tT
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
13
50
0
13
50
0
13
50
6
1
1
1
2
25
45
12
45
12
18
13
5
30
50
13
50
13
20
15
5
40
60
15
60
15
20
15
5
tR P
RAS pulse width
10K
10K
10K
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tW P
RAS hold time
CAS hold time
CAS pulse width
10K
33
10K
37
10K
45
RAS to CAS delay time
4
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
22
25
30
10
0
0
0
8
10
0
10
0
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
0
8
10
25
0
10
30
0
23
0
0
0
0
8
8
0
0
0
8
10
10
15
13
0
10
10
15
15
0
8
13
12
0
tRWL
tCWL
tD S
9
9
Data hold time
tDH
10
10
10
Industrial Temperature
K4F660412E,K4F640412E
AC CHARACTERISTICS (Continued)
Parameter
CMOS DRAM
-45
-50
-60
Symbol
Units
Note
Min
Max
64
Min
Max
64
Min
Max
64
Refresh period (Normal)
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
tREF
tREF
tWCS
tCWD
tRWD
tAWD
tCPWD
tCSR
tCHR
tRPC
tCPA
Refresh period (L-ver)
128
128
128
Write command set-up time
0
0
0
38
83
53
60
5
7
7
7
7
CAS to W delay time
32
67
43
48
5
36
73
48
53
5
RAS to W delay time
Column address toW delay time
CAS precharge W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
10
5
10
5
10
5
Access time from CAS precharge
Fast Page mode cycle time
26
30
35
3
31
70
9
35
76
10
50
30
40
85
10
60
35
tPC
Fast Page mode read-modify-write cycle time
CAS precharge time (Fast page cycle)
RAS pulse width (Fast page cycle)
RAS hold time from CAS precharge
OE access time
tPRWC
tC P
tRASP
tRHCP
tOEA
tOED
tOEZ
tOEH
tWTS
tWTH
tWRP
tWRH
tRASS
tRPS
tCHS
45
28
200K
12
200K
13
200K
15
3
6
OE to data delay
12
0
13
0
13
0
Output buffer turn off delay time fromOE
OE command hold time
13
13
13
12
10
15
10
10
100
80
-50
13
10
15
10
10
100
90
-50
15
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
10
11
11
15
10
10
100
110
-50
13,14,15
13,14,15
13,14,15
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
( Note 11 )
TEST MODE CYCLE
-45
-50
-60
Parameter
Symbol
Units
Note
Min
85
Max
Min
95
Max
Min
115
160
Max
Random read or write cycle time
Read-modify-write cycle time
Access time fromRAS
tRC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
120
138
tRWC
tRAC
tCAC
tAA
50
17
55
18
65
20
3,4,10,12
3,4,5,12
3,10,12
Access time fromCAS
Access time from column address
RAS pulse width
28
30
35
50
17
17
50
28
37
72
48
36
75
50
10K
10K
55
18
18
55
30
41
78
53
40
81
55
10K
10K
65
20
20
65
35
43
88
58
45
90
65
10K
10K
tRAS
tCAS
tRSH
tCSH
tRAL
tCWD
tRWD
tAWD
tPC
CAS pulse width
RAS hold time
CAS hold time
Column Address to RAS lead time
CAS to W delay time
7
7
7
RAS to W delay time
Column Address to W delay time
Fast Page mode cycle time
Fast Page mode read-modify-write cycle time
RAS pulse width (Fast Page cycle)
Access time fromCAS precharge
OE access time
tPRWC
tRASP
tCPA
tOEA
tOED
tOEH
200K
31
200K
35
200K
40
3
3
17
18
20
OE to data delay
17
17
18
18
18
20
OE command hold time
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
NOTES
1. An initial pause of 200us is required after power-up followed by any 8 ROR or CBR cycles before proper device operation is
achieved.
2. VIH(min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL (max) and are assumed to be 5ns for all inputs.
Measured with a load equivalent to 1 TTL load and 100pF.
3.
4.
Operation within thetRCD(max) limit insures that tRAC (max) can be met. tRCD (max) is specified as a reference point only.
If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC .
Assumes that tRCD³ tRCD(max).
5.
6. tOFF(min)and tOEZ(max) define the time at which the output achieves the open circuit condition and are not referenced Voh or
Vol.
tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electric charac-
7.
teristics only. If tWCS³ tWCS(min), the cycles is an early write cycle and the data output will remain high impedance for the
duration of the cycle. If tCWD³ tCWD(min), tRWD³ tRWD(min) and tAWD³ tAWD(min), then the cycle is a read-modify-write cycle
and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the
condition of the data out is indeterminate.
8. Either tRCH or tRRH must be satisfied for a read cycle.
9.
These parameters are referenced to the CAS falling edge in early write cycles and to the W falling edge in read-modify-write
cycles.
Operation within the tRAD(max) limit insures that tRAC (max) can be met. tRAD (max) is specified as a reference point only. If
tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA.
These specifications are applied in the test mode.
10.
11.
12.
In test mode read cycle, the value of tRAC, tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters
should be specified in test mode cycles by adding the above value to the specified value in this data sheet.
If tRASS³ 100us, then RAS precharge time must use tRPS instead oftR P.
13.
14. For RAS-only-Refresh and Burst CAS-before-RAS refresh, 4096 cycles(4K/8K) of burst refresh must be executed within
64ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval, CBR refresh should be executed with in 15.6us immediately before
and after self refresh in order to meet refresh specification.
15.
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
READ CYCLE
tRC
tRAS
tRP
VIH -
RAS
VIL -
tCSH
tCRP
tCRP
tRCD
tRSH
tCAS
VIH -
CAS
VIL -
tRAD
tRAL
tASR
tRAH
tASC
tCAH
COLUMN
ADDRESS
VIH -
VIL -
ROW
ADDRESS
A
W
tRCH
tRCS
tRRH
VIH -
VIL -
tOFF
tOEZ
tAA
VIH -
VIL -
OE
tOEA
tCAC
tCLZ
DQ0 ~ DQ3(7)
tRAC
VOH -
OPEN
DATA-OUT
VOL -
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
WRITE CYCLE ( EARLY WRITE )
NOTE : D OUT = OPEN
tRC
tRAS
tRP
VIH -
RAS
VIL -
tCSH
tCRP
tCRP
tRCD
tRSH
tCAS
VIH -
CAS
VIL -
tRAD
tRAL
tASR
tRAH
tASC
tCAH
VIH -
VIL -
ROW
ADDRESS
COLUMN
ADDRESS
A
tCWL
tRWL
tWCS
tWCH
tW P
VIH -
VIL -
W
VIH -
VIL -
OE
DQ0 ~ DQ3(7)
VIH -
tD S
tDH
DATA-IN
VIL -
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : D OUT = OPEN
tRC
tRAS
tRP
VIH -
RAS
VIL -
tCSH
tCRP
tCRP
tRCD
tRSH
tCAS
VIH -
VIL -
CAS
tRAD
tRAL
tASR
tRAH
tASC
tCAH
COLUMN
ADDRESS
VIH -
VIL -
ROW
ADDRESS
A
W
tCWL
tRWL
VIH -
VIL -
tWP
VIH -
VIL -
OE
tOED
tOEH
tD S
DQ0 ~ DQ3(7)
VIH -
tDH
DATA-IN
VIL -
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
READ - MODIFY - WRTIE CYCLE
tRWC
tRP
tRAS
VIH -
RAS
VIL -
tCRP
tRCD
tRSH
tCAS
VIH -
CAS
VIL -
tRAD
tRAH
tASR
tASC
tCAH
tCSH
VIH -
VIL -
ROW
ADDR
COLUMN
ADDRESS
A
tRWL
tCWL
tAWD
tCWD
VIH -
VIL -
tWP
W
tRWD
tOEA
VIH -
VIL -
OE
tCLZ
tCAC
tOED
tOEZ
tAA
tDS
tDH
DQ0 ~ DQ3(7)
tRAC
VI/OH -
VALID
DATA-OUT
VALID
DATA-IN
VI/OL -
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
FAST PAGE READ CYCLE
tRASP
tR P
VIH -
RAS
tRHCP
VIL -
¡ó
tPC
tCRP
tCP
tRCD
tCP
tRSH
tCAS
tCAS
¡ó
VIH -
CAS
tCAS
VIL -
tRAD
tASC
tCSH
tASR
ROW
tASC
tCAH
tASC
tCAH
tRAH
tCAH
tRCH
¡ó
¡ó
VIH -
VIL -
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDRESS
A
W
ADDR
tRAL
tRCS
tRRH
tRCS
tRCS
tRCH
¡ó
VIH -
VIL -
tCAC
tOEA
tCAC
tOEA
tCAC
tOEA
¡ó
¡ó
VIH -
VIL -
OE
tAA
tOFF
tAA
tOFF
tCLZ
tAA
tOFF
tOEZ
tRAC
tCLZ
tCLZ
DQ0 ~ DQ3(7)
tOEZ
VALID
tOEZ
VALID
VOH -
VOL -
VALID
DATA-OUT
DATA-OUT
DATA-OUT
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
FAST PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : D OUT = OPEN
tRP
tRASP
¡ó
VIH -
RAS
VIL -
tRHCP
tPC
tPC
tCRP
tCP
tRCD
tC P
tRSH
tCAS
tCAS
¡ó
VIH -
VIL -
tCAS
CAS
tRAD
tASC
tRAH
ROW
ADDR
tRAL
tCAH
tCSH
tASC
tCAH
tASC
tASR
tCAH
¡ó
¡ó
VIH -
VIL -
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
A
ADDRESS
tWCS
tWCS
tWCH
tWP
tWCS
tWCH
¡ó
tWCH
VIH -
VIL -
tWP
tWP
W
tCWL
tCWL
tRWL
tCWL
¡ó
VIH -
VIL -
OE
¡ó
tDS
tDH
tDS
tDH
tD S
tDH
DQ0 ~ DQ3(7)
¡ó
¡ó
VIH -
VIL -
VALID
DATA-IN
VALID
DATA-IN
VALID
DATA-IN
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
FAST PAGE READ - MODIFY - WRITE CYCLE
tR P
tRASP
VIH -
VIL -
tCSH
RAS
CAS
tRSH
tRCD
tRAD
tCP
tCRP
VIH -
VIL -
tCAS
tCAS
tPRWC
tCAH
tRAH
tASC
tRAL
tCAH
tASR
tASC
VIH -
VIL -
ROW
ADDR
COL.
COL.
ADDR
A
ADDR
tRWL
tWP
tRCS
tCWL
tCWL
VIH -
VIL -
tWP
W
tCWD
tAWD
tRWD
tCWD
tAWD
tCPWD
tOEA
VIH -
VIL -
tOEA
OE
tOED
tCAC
tAA
tOED
tCAC
tDH
tAA
tDH
tDS
tOEZ
tD S
DQ0 ~ DQ3(7)
tOEZ
tRAC
VI/OH -
VI/OL -
tCLZ
tCLZ
VALID
VALID
VALID
DATA-OUT
VALID
DATA-IN
DATA-OUT
DATA-IN
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
RAS - ONLY REFRESH CYCLE
NOTE : W, OE, DIN = Don¢t care
DOUT = OPEN
tRC
tRP
tRAS
VIH -
RAS
VIL -
tCRP
tRPC
tCRP
VIH -
CAS
VIL -
tASR
tRAH
VIH -
VIL -
ROW
ADDR
A
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE, A = Don¢t care
tRC
tRP
tRAS
tRP
VIH -
RAS
tRPC
tCP
VIL -
tRPC
VIH -
VIL -
tCSR
tWRP
CAS
W
tCHR
tWRH
VIH -
VIL -
tOFF
DQ0 ~ DQ3(7)
VOH -
VOL -
OPEN
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
HIDDEN REFRESH CYCLE ( READ )
tRC
tRC
tR P
tRP
tRAS
tRAS
VIH -
RAS
VIL -
tCRP
tRCD
tRSH
tCHR
VIH -
VIL -
CAS
tRAD
tASR
tRAH
tASC
tCAH
COLUMN
VIH -
VIL -
ROW
ADDRESS
A
ADDRESS
tWRH
tRAL
tRCS
VIH -
VIL -
W
tAA
VIH -
VIL -
OE
tOEA
tOFF
tCAC
tCLZ
DQ0 ~ DQ3(7)
VOH -
tRAC
tOEZ
OPEN
DATA-OUT
VOL -
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : D OUT = OPEN
tRC
tRC
tRP
tR P
tRAS
tRAS
VIH -
RAS
VIL -
tCRP
tRCD
tRSH
tCHR
VIH -
CAS
VIL -
tRAD
tASR
tRAH
tASC
tCAH
VIH -
VIL -
ROW
ADDRESS
COLUMN
ADDRESS
A
tWRH
tWRP
tRAL
tWCS
tWCH
VIH -
VIL -
W
tWP
VIH -
VIL -
OE
tDS
tDH
DQ0 ~ DQ3(7)
VIH -
VIL -
DATA-IN
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE, A = Don¢t care
tRP
tRASS
tRPS
VIH -
RAS
tRPC
tC P
VIL -
tRPC
tCHS
VIH -
VIL -
tCSR
CAS
DQ0 ~ DQ3(7)
VOH -
tOFF
OPEN
VOL -
tWRP
tWRH
VIH -
W
VIL -
TEST MODE IN CYCLE
NOTE : OE, A = Don¢t care
tRC
tRP
tRAS
tRP
VIH -
RAS
VIL -
tRPC
tC P
tRPC
VIH -
CAS
VIL -
tCSR
tCHR
tWTS
tWTH
VIH -
W
VIL -
DQ0 ~ DQ3(7)
VOH -
tOFF
OPEN
VOL -
Don¢t care
Undefined
Industrial Temperature
K4F660412E,K4F640412E
CMOS DRAM
PACKAGE DIMENSION
32 SOJ 400mil
Units : Inches (millimeters)
#32
0.006 (0.15)
0.012 (0.30)
#1
0.027 (0.69)
MIN
0.841 (21.36)
MAX
0.820 (20.84)
0.830 (21.08)
0.0375 (0.95)
0.050 (1.27)
0.026 (0.66)
0.032 (0.81)
0.015 (0.38)
0.021 (0.53)
32 TSOP(II) 400mil
Units : Inches (millimeters)
0.004 (0.10)
0.010 (0.25)
0.841 (21.35)
MAX
0.821 (20.85)
0.829 (21.05)
0.047 (1.20)
MAX
0.010 (0.25)
TYP
0.002 (0.05)
0.037 (0.95)
0.050 (1.27)
MIN
0.012 (0.30)
0.020 (0.50)
0~8 O
0.018 (0.45)
0.030 (0.75)
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