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K4N26323AE [SAMSUNG]

128Mbit GDDR2 SDRAM; 的128Mbit GDDR2 SDRAM

K4N26323AE


元器件型号：	K4N26323AE
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	128Mbit GDDR2 SDRAM 的128Mbit GDDR2 SDRAM 动态存储器双倍数据速率
PDF文件：	总52页 (文件大小：825K)
下载文档：	下载PDF数据表文档文件
型号参数：K4N26323AE参数

K4N26323AE-GC20

128Mbit GDDR2 SDRAM

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19 SAMSUNG

K4N26323AE-GC20

128Mbit GDDR2 SDRAM

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29 SAMSUNG

K4N26323AE-GC200

DDR DRAM, 4MX32, CMOS, PBGA144, FBGA-144

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0 SAMSUNG

K4N26323AE-GC22

128Mbit GDDR2 SDRAM

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25 SAMSUNG

K4N26323AE-GC22

128Mbit GDDR2 SDRAM

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18 SAMSUNG

K4N26323AE-GC25

128Mbit GDDR2 SDRAM

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11 SAMSUNG

K4N26323AE-GC25

128Mbit GDDR2 SDRAM

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18 SAMSUNG

K4N26323AE-GC250

DDR DRAM, 4MX32, CMOS, PBGA144, FBGA-144

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0 SAMSUNG

K4N27

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

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19 KODENSHI

K4N28

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

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45 KODENSHI

K4N29

Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

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20 KODENSHI

K4N29

Transistor Output Optocoupler, 1-Element, 2500V Isolation

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0 KODENSHI

K4N29A

Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

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22 KODENSHI

K4N29A

Transistor Output Optocoupler, 1-Element, 1800V Isolation

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0 KODENSHI

K4N30

Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

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15 KODENSHI

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