K4R271669B-MCG6 [SAMSUNG]

256K x 16/18 bit x 32s banks Direct RDRAMTM; 256K X 16/18位x 32S银行直接RDRAMTM
K4R271669B-MCG6
元器件型号: K4R271669B-MCG6
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

256K x 16/18 bit x 32s banks Direct RDRAMTM
256K X 16/18位x 32S银行直接RDRAMTM

存储 内存集成电路 动态存储器 时钟
PDF文件: 总20页 (文件大小:308K)
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型号参数:K4R271669B-MCG6参数

K4R271669B-MCK7

256K x 16/18 bit x 32s banks Direct RDRAMTM

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9 SAMSUNG

K4R271669B-MCK7

256K x 16/18 bit x 32s banks Direct RDRAMTM

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20 SAMSUNG

K4R271669B-MCK7

Rambus DRAM, 8MX16, 45ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R271669B-MCK8

256K x 16/18 bit x 32s banks Direct RDRAMTM

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21 SAMSUNG

K4R271669B-MCK8

256K x 16/18 bit x 32s banks Direct RDRAMTM

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18 SAMSUNG

K4R271669B-MCK8

Rambus DRAM, 8MX16, 45ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R271669B-MCK8T

暂无描述

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0 SAMSUNG

K4R271669B-N(M)CG6

256K x 16/18 bit x 32s banks Direct RDRAMTM

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23 SAMSUNG

K4R271669B-N(M)CK7

256K x 16/18 bit x 32s banks Direct RDRAMTM

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23 SAMSUNG

K4R271669B-NB(M)CCK8

256K x 16/18 bit x 32s banks Direct RDRAMTM

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43 SAMSUNG

K4R271669B-NCG6

256K x 16/18 bit x 32s banks Direct RDRAMTM

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19 SAMSUNG

K4R271669B-NCG6

256K x 16/18 bit x 32s banks Direct RDRAMTM

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0 SAMSUNG

K4R271669B-NCG6

Rambus DRAM, 8MX16, 53.3ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R271669B-NCG6T

Rambus DRAM, 8MX16, CMOS, PBGA62,

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0 SAMSUNG

K4R271669B-NCK7

256K x 16/18 bit x 32s banks Direct RDRAMTM

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1 SAMSUNG