K4R271669B-NB(M)CCK8 [SAMSUNG]

256K x 16/18 bit x 32s banks Direct RDRAMTM; 256K X 16/18位x 32S银行直接RDRAMTM
K4R271669B-NB(M)CCK8
元器件型号: K4R271669B-NB(M)CCK8
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

256K x 16/18 bit x 32s banks Direct RDRAMTM
256K X 16/18位x 32S银行直接RDRAMTM

动态存储器
PDF文件: 总20页 (文件大小:308K)
下载文档:  下载PDF数据表文档文件
型号参数:K4R271669B-NB(M)CCK8参数

K4R271669B-NCG6

256K x 16/18 bit x 32s banks Direct RDRAMTM

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19 SAMSUNG

K4R271669B-NCG6

256K x 16/18 bit x 32s banks Direct RDRAMTM

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0 SAMSUNG

K4R271669B-NCG6

Rambus DRAM, 8MX16, 53.3ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R271669B-NCG6T

Rambus DRAM, 8MX16, CMOS, PBGA62,

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0 SAMSUNG

K4R271669B-NCK7

256K x 16/18 bit x 32s banks Direct RDRAMTM

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1 SAMSUNG

K4R271669B-NCK7

256K x 16/18 bit x 32s banks Direct RDRAMTM

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13 SAMSUNG

K4R271669B-NCK7

Rambus DRAM, 8MX16, 45ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R271669B-NCK7T

Rambus DRAM, 8MX16, CMOS, PBGA62,

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0 SAMSUNG

K4R271669B-NCK8

256K x 16/18 bit x 32s banks Direct RDRAMTM

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36 SAMSUNG

K4R271669B-NCK8

256K x 16/18 bit x 32s banks Direct RDRAMTM

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8 SAMSUNG

K4R271669B-NCK8

Rambus DRAM, 8MX16, 45ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

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0 SAMSUNG

K4R271669B-NCK8T

暂无描述

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0 SAMSUNG

K4R271669D

128Mbit RDRAM(D-die)

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17 SAMSUNG

K4R271669D

128Mbit RDRAM(D-die)

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8 SAMSUNG

K4R271669D-T

128Mbit RDRAM(D-die)

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10 SAMSUNG