K4S51323LF-EF75 [SAMSUNG]
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90;
| 型号： | K4S51323LF-EF75 |
| 厂家： | 
SAMSUNG |
| 描述： | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90 时钟 动态存储器 内存集成电路 |
| 文件： | 总12页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
K4S51323LF - M(E)C/L/F
Mobile SDRAM
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
FEATURES
GENERAL DESCRIPTION
• VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
The K4S51323LF is 536,870,912 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 2Chips DDP 90Balls FBGA ( -MXXX -Pb, -EXXX -Pb Free).
ORDERING INFORMATION
Part No.
Max Freq.
133MHz(CL=3), 111MHz(CL=2)
111MHz(CL=2)
Interface
Package
K4S51323LF-M(E)C/L/F75
K4S51323LF-M(E)C/L/F1H
K4S51323LF-M(E)C/L/F1L
90 FBGA Pb
(Pb Free)
LVCMOS
111MHz(CL=3)*1, 83MHz(CL2)
- M(E)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic
DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations or desk top
computers for the first three years of five year term of this license. Nothing herein limits the rights of Samsung to use Multi-Die Plastic DRAM in other
products or other applications under paragrangh such as mobile, telecom or non-computer application(which include by way of example laptop or
notebook computers, cell phones, televisions or visual monitors)
Violation may subject the customer to legal claims and also excludes any warranty against infringement from Samsung." .
3. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur
pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
1
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
FUNCTIONAL BLOCK DIAGRAM
LWE
Data Input Register
LDQM
Bank Select
4M x 32
4M x 32
4M x 32
4M x 32
DQi
CLK
ADD
Column Decoder
Latency & Burst Length
LCKE
Programming Register
LWCBR
LRAS
LCBR
LWE
LCAS
LDQM
Timing Register
CLK
CKE
CS
RAS
CAS
WE
DQM
2
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
Package Dimension and Pin Configuration
< Bottom View*1
>
< Top View*2
>
E1
90Ball(6x15) FBGA
9
8
7
6
5
4
3
2
1
1
2
3
7
8
9
A
B
C
D
E
F
A
B
C
D
E
F
DQ26 DQ24
VSS
VSSQ
VDD
VDDQ
DQ23 DQ21
DQ28
VSSQ
VSSQ
VDDQ
VSS
VDDQ
VSSQ
DQ19
VDDQ
VDDQ
VSSQ
VDD
DQ27 DQ25 DQ22 DQ20
DQ29 DQ30 DQ17 DQ18
DQ31
DQM3
A5
NC
A3
NC
A2
DQ16
DQM2
A0
G
H
J
G
H
J
A4
A6
A10
NC
A1
A7
A8
A12
A9
BA1
CS
A11
CLK
CKE
NC
BA0
CAS
VDD
DQ6
DQ1
VDDQ
VDD
RAS
DQM0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
K
L
K
L
DQM1
VDDQ
VSSQ
VSSQ
DQ11
NC
VSS
DQ9
WE
DQ8
DQ10
DQ7
DQ5
DQ3
VSSQ
DQ0
M
N
P
R
M
N
P
R
DQ12 DQ14
VDDQ
VSSQ
VSS
DQ13 DQ15
E
E/2
Pin Name
Pin Function
System Clock
Chip Select
Clock Enable
Address
CLK
CS
A
CKE
A1
A0 ~ A12
BA0 ~ BA1
RAS
Substrate(2Layer)
z
b
Bank Select Address
Row Address Strobe
Column Address Strobe
Write Enable
< Top View*2
>
CAS
#A1 Ball Origin Indicator
WE
DQM0 ~ DQM3
DQ0 ~ 31
Data Input/Output Mask
Data Input/Output
VDD/VSS
Power Supply/Ground
VDDQ/VSSQ
Data Output Power/Ground
[Unit:mm]
Symbol
Min
Typ
1..30
0.32
11.0
6.40
13.0
11.2
0.80
0.50
-
Max
A
A1
E
-
1.40
0.27
0.37
-
-
E1
D
-
-
-
-
-
D1
e
-
-
0.45
-
-
b
0.55
0.10
z
3
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
Value
-1.0 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
1.0
Unit
V
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
V
°C
W
Power dissipation
PD
Short circuit current
IOS
50
mA
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 70°C)
Parameter
Symbol
Min
Typ
Max
2.7
2.7
2.7
Unit
V
Note
VDD
2.3
2.5
Supply voltage
2.3
1.65
2.5
V
VDDQ
-
-
V
1
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
NOTES :
VIH
VIL
0.8 x VDDQ
-0.3
VDDQ + 0.3
V
2
0
-
0.3
-
V
3
VOH
VOL
ILI
VDDQ -0.2
-
V
IOH = -0.1mA
IOL = 0.1mA
4
-
0.2
2
V
-2
-
uA
1. Samsung can support VDDQ 2.5V(in general case) and 1.8V(in specific case) for VDD 2.5V products. Please contact to the
memory marketing team in Samsung Electronics when considering the use of VDDQ 1.8V(Min 1.65V).
2. VIH (max) = 3.0V AC.The overshoot voltage duration is ≤ 3ns.
3. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.
4. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 2.5V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)
Pin
Symbol
CCLK
CIN
Min
3.0
3.0
1.5
3.0
3.0
Max
6.0
6.0
3.0
6.0
5.0
Unit
pF
Note
Clock
RAS, CAS, WE, CS, CKE
DQM
pF
CIN
pF
Address
CADD
COUT
pF
DQ0 ~ DQ31
pF
4
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 70°C)
Version
Parameter
Symbol
Test Condition
Unit Note
-75
-1H
-1L
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
Operating Current
(One Bank Active)
ICC1
120
120
110
mA
mA
1
ICC2P CKE ≤ VIL(max), tCC = 10ns
1.0
1.0
Precharge Standby Current in
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
ICC2N
20
10
Input signals are changed one time during 20ns
Precharge Standby Current
in non power-down mode
mA
mA
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
ICC2NS
Input signals are stable
ICC3P CKE ≤ VIL(max), tCC = 10ns
8
4
Active Standby Current
in power-down mode
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
ICC3N
45
30
mA
mA
Active Standby Current
in non power-down mode
(One Bank Active)
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
ICC3NS
Input signals are stable
IO = 0 mA
Operating Current
(Burst Mode)
Page burst
4Banks Activated
tCCD = 2CLKs
ICC4
170
300
150
150
240
mA
1
Refresh Current
ICC5
ICC6
tRC ≥ tRC(min)
280
1500
1200
mA
uA
°C
2
4
5
3
-C
-L
Internal TCSR
Full Array
1/2 of Full Array
1/4 of Full Array
Max 40
900
Max 70
1200
900
Self Refresh Current
CKE ≤ 0.2V
-F
uA
6
800
700
800
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported(In commercial Temp : Max 40°C/Max 70°C).
4. K4S51323LF-M(E)C**
5. K4S51323LF-M(E)L**
6. K4S51323LF-M(E)F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
5
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
AC OPERATING TEST CONDITIONS(VDD = 2.5V ± 0.2V, TA = -25 to 70°C)
Parameter
AC input levels (Vih/Vil)
Value
0.9 x VDDQ / 0.2
0.5 x VDDQ
tr/tf = 1/1
Unit
V
Input timing measurement reference level
Input rise and fall time
V
ns
V
Output timing measurement reference level
Output load condition
0.5 x VDDQ
See Figure 2
VDDQ
500Ω
Vtt=0.5 x VDDQ
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
30pF
Output
50Ω
500Ω
Output
Z0=50Ω
30pF
Figure 1. DC Output Load Circuit
Figure 2. AC Output Load Circuit
6
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Version
Parameter
Symbol
Unit
Note
-75
15
18
18
45
-1H
-1L
18
24
24
60
Row active to row active delay
RAS to CAS delay
tRRD(min)
tRCD(min)
18
ns
ns
1
1
1
1
18
Row precharge time
tRP(min)
18
ns
tRAS(min)
50
ns
Row active time
tRAS(max)
100
us
Row cycle time
tRC(min)
63
68
84
ns
1
2
3
2
2
4
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
tRDL(min)
2
CLK
-
tDAL(min)
tRDL + tRP
tCDL(min)
1
1
1
2
1
CLK
CLK
CLK
tBDL(min)
Col. address to col. address delay
Number of valid output data
Number of valid output data
Number of valid output data
tCCD(min)
CAS latency=3
CAS latency=2
CAS latency=1
ea
5
0
NOTES:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. Minimum tRDL=2CLK and tDAL(= tRDL + tRP) is required to complete both of last data write command(tRDL) and precharge command(tRP).
4. All parts allow every cycle column address change.
5. In case of row precharge interrupt, auto precharge and read burst stop.
7
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
AC CHARACTERISTICS(AC operating conditions unless otherwise noted)
-75
-1H
-1L
Parameter
Symbol
Unit Note
Min
7.5
9.0
-
Max
Min
9.0
9.0
-
Max
Min
Max
CLK cycle time
CLK cycle time
CLK cycle time
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
tCC
tCC
tCC
tSAC
tSAC
tSAC
tOH
tOH
tOH
tCH
tCL
9.0
12
25
1000
1000
1000
ns
ns
ns
1
1,2
2
CLK to valid output delay
CLK to valid output delay
CLK to valid output delay
Output data hold time
Output data hold time
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
5.4
7
7
7
-
7
8
-
20
2.5
2.5
-
2.5
2.5
-
2.5
2.5
2.5
3.0
3.0
2.5
1.5
1
2.5
2.5
2.0
1.0
1
3.0
3.0
2.5
1.5
1
ns
ns
ns
ns
ns
3
3
3
3
2
tSS
Input hold time
tSH
CLK to output in Low-Z
tSLZ
CAS latency=3
CAS latency=2
CAS latency=1
5.4
7
7
7
-
7
8
CLK to output in Hi-Z
tSHZ
ns
-
20
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
8
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
SIMPLIFIED TRUTH TABLE
A12, A11,
Note
COMMAND
CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP
A9 ~ A0
Register
Refresh
Mode Register Set
Auto Refresh
H
H
X
H
L
L
L
L
L
L
L
L
X
X
OP CODE
X
1, 2
3
H
Entry
3
Self
L
H
L
H
X
L
H
X
H
H
X
H
3
Refresh
Exit
L
H
H
H
X
X
X
X
X
X
3
Bank Active & Row Addr.
V
V
Row Address
Read &
Column Address
Auto Precharge Disable
Auto Precharge Enable
L
Column
4
L
H
L
H
Address
(A0~A8)
H
4, 5
Write &
Column Address
Auto Precharge Disable
Auto Precharge Enable
L
Column
Address
(A0~A8)
4
H
H
H
X
X
X
L
L
L
H
H
L
L
H
H
L
L
L
X
X
X
V
H
4, 5
Burst Stop
Precharge
X
6
Bank Selection
All Banks
V
X
L
X
H
H
L
X
V
X
X
H
X
V
X
X
H
X
V
X
X
H
X
V
X
V
X
X
H
X
V
Entry
H
L
L
H
L
X
X
X
Clock Suspend or
Active Power Down
X
X
Exit
X
H
L
Entry
H
Precharge Power Down
Mode
H
L
Exit
L
H
H
H
X
X
V
X
DQM
X
X
7
H
L
X
H
X
H
No Operation Command
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
NOTES :
1. OP Code : Operand Code
A0 ~ A12 & BA0 ~ BA1 : Program keys. (@MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are the same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
Partial self refresh can be issued only after setting partial self refresh mode of EMRS.
4. BA0 ~ BA1 : Bank select addresses.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at the positive going edge of CLK masks the data-in at that same CLK in write operation (Write DQM latency
is 0), but in read operation, it makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2).
9
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
A9*2
BA0 ~ BA1
Address
A12 ~ A10/AP
A8
A7
A6
A5
A4
A3
A2
A1
A0
"0" Setting for
Normal MRS
RFU*1
Function
W.B.L
Test Mode
CAS Latency
BT
Burst Length
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Type
Burst Length
A8 A7
Type
Mode Register Set
Reserved
A6 A5 A4
Latency
Reserved
1
A3
0
A2
A1
0
A0
0
BT=0
BT=1
0
0
1
1
0
1
0
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Sequential
Interleave
0
0
0
0
1
1
1
1
1
2
4
8
1
2
4
8
1
0
1
Reserved
2
Mode Select
1
0
Reserved
3
BA1 BA0
Mode
1
1
Write Burst Length
Length
Reserved
Reserved
Reserved
Reserved
0
0
Reserved Reserved
Reserved Reserved
Reserved Reserved
Setting
for Nor-
mal MRS
A9
0
0
1
0
0
Burst
1
0
Full Page*3
Reserved
1
Single Bit
1
1
Register Programmed with Extended MRS
Address
BA1
BA0
A12 ~ A10/AP
A9
RFU*1
A8
A7
A6
A5
A4
A3
A2
A1
A0
RFU*1
Function
Mode Select
DS
PASR
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
Mode Select
Mode
Driver Strengt
A5 Driver Strength
Full
PASR
BA1
BA0
A6
0
A2
0
A1
0
A0
0
Size of Refreshed Array
Full Array
0
0
1
1
0
1
0
1
Normal MRS
Reserved
0
0
1
0
1
1/2
0
0
1
1/2 of Full Array
1/4 of Full Array
Reserved
EMRS for Mobile SDRAM
Reserved
1
Reserved
Reserved
0
1
0
1
0
1
1
Reserved Address
1
0
0
Reserved
A12~A10/AP
0
A9
0
A8
0
A7
0
A4
0
A3
0
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
3. Full Page Length : x32 : 64Mb(256) , 128Mb (256), 256Mb (512), 512Mb (512)
10
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
Partial Array Self Refresh
1. In order to save power consumption, Mobile SDRAM has PASR option.
2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : Full Array, 1/2 of Full Array and 1/4 of Full Array.
BA1=0
BA0=0
BA1=0
BA0=1
BA1=0
BA0=0
BA1=0
BA0=1
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
- 1/4 Array
- Full Array
- 1/2 Array
Partial Self Refresh Area
Temperature Compensated Self Refresh
1. In order to save power consumption, Mobile-DRAM includes the internal temperature sensor and control units to control the self
refresh cycle automatically according to the two temperature range : Max 40 °C and Max 70 °C.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Self Refresh Current (Icc6)
Temperature Range
- F
1/2 of Full Array
900
Unit
- C
- L
Full Array
1200
1/4 of Full Array
Max 70 °C
Max 40 °C
800
700
1500
1200
uA
900
800
B. POWER UP SEQUENCE
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply VDD before or at the same time as VDDQ.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.
The default state without EMRS command issued is the full driver strength and full array refreshed.
The device is now ready for the operation selected by EMRS.
For operating with DS or PASR, set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not
needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
11
September 2004
K4S51323LF - M(E)C/L/F
Mobile SDRAM
C. BURST SEQUENCE
1. BURST LENGTH = 4
Initial Address
Sequential
Interleave
A1
0
A0
0
0
1
2
3
1
2
3
0
2
3
0
1
3
0
1
2
0
1
2
3
1
0
3
2
2
3
0
1
3
2
1
0
0
1
1
0
1
1
2. BURST LENGTH = 8
Initial Address
Sequential
Interleave
A2
0
A1
0
A0
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
0
2
3
4
5
6
7
0
1
3
4
5
6
7
0
1
2
4
5
6
7
0
1
2
3
5
6
7
0
1
2
3
4
5
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
1
2
3
0
1
6
7
4
5
3
2
1
0
7
6
5
4
4
5
6
7
0
1
2
3
5
4
7
6
1
0
3
2
6
7
4
5
2
3
0
1
7
6
5
4
3
2
1
0
0
0
1
6
7
0
1
2
3
4
0
3
2
5
4
7
6
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
12
September 2004
相关型号：
©2020 ICPDF网 联系我们和版权申明