K4S561632E-TL60 [SAMSUNG]

256Mb E-die SDRAM Specification; 256Mb的电子芯片SDRAM规格
K4S561632E-TL60
元器件型号: K4S561632E-TL60
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

256Mb E-die SDRAM Specification
256Mb的电子芯片SDRAM规格

存储 内存集成电路 光电二极管 电子 动态存储器 时钟
PDF文件: 总14页 (文件大小:198K)
下载文档:  下载PDF数据表文档文件
型号参数:K4S561632E-TL60参数

K4S561632E-TL75

256Mb E-die SDRAM Specification

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7 SAMSUNG

K4S561632E-TL75

256Mb E-die SDRAM Specification

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35 SAMSUNG

K4S561632E-TL75

256Mb E-die SDRAM Specification

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47 SAMSUNG

K4S561632E-TL75

256Mb E-die SDRAM Specification

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101 SAMSUNG

K4S561632E-TL75

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

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0 SAMSUNG

K4S561632E-UC60

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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110 SAMSUNG

K4S561632E-UC600

Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

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0 SAMSUNG

K4S561632E-UC75

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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606 SAMSUNG

K4S561632E-UC750

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

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0 SAMSUNG

K4S561632E-UC75T

暂无描述

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0 SAMSUNG

K4S561632E-UL60

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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58 SAMSUNG

K4S561632E-UL75

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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198 SAMSUNG

K4S561632E-UL750

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

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0 SAMSUNG

K4S561632H

SDRAM Product Guide

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205 SAMSUNG

K4S561632H-UI75T

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP-54

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6 SAMSUNG