K4S641632E-TC600 [SAMSUNG]

Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54;
K4S641632E-TC600
型号: K4S641632E-TC600
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

动态存储器 光电二极管 内存集成电路
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64Mbit SDRAM

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37 SAMSUNG

K4S641632E-TC70T

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54

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0 SAMSUNG

K4S641632E-TC70T

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54

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0 SAMSUNG

K4S641632E-TC75

64Mbit SDRAM

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103 SAMSUNG

K4S641632E-TC750

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

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0 SAMSUNG

K4S641632E-TI75

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54

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0 SAMSUNG

K4S641632E-TL1H

64Mbit SDRAM

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41 SAMSUNG

K4S641632E-TL1L

64Mbit SDRAM

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34 SAMSUNG

K4S641632E-TL1LT

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54

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0 SAMSUNG

K4S641632E-TL50

64Mbit SDRAM

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14 SAMSUNG

K4S641632E-TL55

64Mbit SDRAM

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22 SAMSUNG

K4S641632E-TL55T

Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54

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0 SAMSUNG

K4S641632E-TL60

64Mbit SDRAM

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17 SAMSUNG

K4S641632E-TL70

64Mbit SDRAM

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21 SAMSUNG

K4S641632E-TL70T

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54

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0 SAMSUNG