K4T1G164QG-BPE60 [SAMSUNG]
DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84;
| 型号： | K4T1G164QG-BPE60 |
| 厂家： | 
SAMSUNG |
| 描述： | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 动态存储器 双倍数据速率 |
| 文件： | 总44页 (文件大小：484K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rev. 1.0, Feb. 2014
K4T1G084QG
K4T1G164QG
1Gb G-die DDR2 SDRAM Industrial
60FBGA/84FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
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military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2014 Samsung Electronics Co., Ltd. All rights reserved.
- 1 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
Revision History
Revision No.
History
Draft Date
Remark
Editor
1.0
- First SPEC Release.
Feb. 2014
-
S.H.Kim
- 2 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
Table Of Contents
1Gb G-die DDR2 SDRAM Industrial
1. Ordering Information.....................................................................................................................................................4
2. Key Features.................................................................................................................................................................4
3. Package pinout/Mechanical Dimension & Addressing..................................................................................................5
3.1 x8 Package Pinout (Top view) : 60ball FBGA Package ..........................................................................................5
3.2 x16 Package Pinout (Top view) : 84ball FBGA Package ........................................................................................6
3.3 FBGA Package Dimension (x8)...............................................................................................................................7
3.4 FBGA Package Dimension (x16).............................................................................................................................8
4. Input/Output Functional Description..............................................................................................................................9
5. DDR2 SDRAM Addressing ...........................................................................................................................................10
6. Absolute Maximum Ratings ..........................................................................................................................................11
7. AC & DC Operating Conditions.....................................................................................................................................11
7.1 Recommended DC operating Conditions (SSTL_1.8).............................................................................................11
7.2 Operating Temperature Condition...........................................................................................................................12
7.3 Input DC Logic Level ...............................................................................................................................................12
7.4 Input AC Logic Level ...............................................................................................................................................12
7.5 AC Input Test Conditions.........................................................................................................................................12
7.6 Differential input AC logic Level...............................................................................................................................13
7.7 Differential AC output parameters ...........................................................................................................................13
8. ODT DC electrical characteristics.................................................................................................................................13
9. OCD default characteristics ..........................................................................................................................................14
10. IDD Specification Parameters and Test Conditions....................................................................................................15
11. DDR2 SDRAM IDD Spec Table..................................................................................................................................17
12. Input/Output capacitance............................................................................................................................................18
13. Electrical Characteristics & AC Timing for DDR2-800/667 .........................................................................................18
13.1 Refresh Parameters by Device Density.................................................................................................................18
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin ................................................................18
13.3 Timing Parameters by Speed Grade.....................................................................................................................19
14. General notes, which may apply for all AC parameters..............................................................................................21
15. Specific Notes for dedicated AC parameters..............................................................................................................23
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Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
1. Ordering Information
Organization
DDR2-800 (5-5-5)
K4T1G084QG-BI(P)E7
K4T1G164QG-BI(P)E7
DDR2-800 (6-6-6)
K4T1G084QG-BI(P)F7
K4T1G164QG-BI(P)F7
DDR2-667 (5-5-5)
K4T1G084QG-BI(P)E6
K4T1G164QG-BI(P)E6
Package
60 FBGA
84 FBGA
128Mx8
64Mx16
NOTE :
1. Speed bin is in order of CL-tRCD-tRP.
2. RoHS Compliant.
3. “B” of Part number(12th digit) stands for flip chip FBGA PKG.
4. “I” of Part number(13th digit) stands normal, and “P” stands for Low power products.
2. Key Features
Speed
CAS Latency
tRCD(min)
tRP(min)
DDR2-800 5-5-5
DDR2-800 6-6-6
DDR2-667 5-5-5
Units
tCK
ns
5
6
5
12.5
12.5
57.5
15
15
60
15
15
60
ns
tRC(min)
ns
•
•
•
JEDEC standard V = 1.8V ± 0.1V Power Supply
The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x 8banks, 8Mbit
x 16 I/Os x 8 banks device. This synchronous device achieves high speed
double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for gen-
eral applications.
DD
V
= 1.8V ± 0.1V
DDQ
333MHz f for 667Mb/sec/pin, 400MHz f for 800Mb/sec/pin
CK
CK
•
•
•
•
•
•
•
•
8 Banks
The chip is designed to comply with the following key DDR2 SDRAM fea-
tures such as posted CAS with additive latency, write latency = read
latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Ter-
mination.
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6
Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
Write Latency(WL) = Read Latency(RL) -1
All of the control and address inputs are synchronized with a pair of exter-
nally supplied differential clocks. Inputs are latched at the crosspoint of dif-
ferential clocks (CK rising and CK falling). All I/Os are synchronized with a
pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-
ion. The address bus is used to convey row, column, and bank address
information in a RAS/CAS multiplexing style. For example, 1Gb(x16)
device receive 13/10/3 addressing.
Burst Length: 4 , 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data-strobe is
an optional feature)
•
•
•
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power supply
Special Function Support
and 1.8V ± 0.1V V
.
DDQ
- 50ohm ODT
The 1Gb DDR2 device is available in 60ball FBGA(x8) and in 84ball
FBGA(x16).
- High Temperature Self-Refresh rate enable
•
•
Average Refresh Period 7.8us at -40C < T
< 95 C
CASE
All of products are Lead-Free, Halogen-Free, and RoHS compliant
NOTE : The functionality described and the timing specifications included in this data
sheet are for the DLL Enabled mode of operation.
NOTE : This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in “DDR2 SDRAM Device Operation & Timing
Diagram”.
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Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
3. Package pinout/Mechanical Dimension & Addressing
3.1 x8 Package Pinout (Top view) : 60ball FBGA Package
1
2
3
4
5
6
7
8
9
V
V
V
V
A
B
C
D
NU/RDQS
DQS
DD
SS
SSQ
DDQ
V
V
DQ6
DM/RDQS
DQS
DQ7
SSQ
SSQ
V
V
V
V
DQ1
DQ0
DDQ
DDQ
DDQ
DDQ
V
V
DQ4
DQ3
DQ2
DQ5
SSQ
SSQ
V
V
V
V
V
E
F
CK
CK
CS
A0
DD
REF
SS
SS
DD
CKE
BA0
WE
BA1
A1
RAS
CAS
A2
ODT0
G
H
BA2
V
A10/AP
DD
V
J
K
L
A3
A7
A5
A9
NC
A6
A11
NC
A4
A8
SS
V
SS
V
A12
A13
DD
NOTE :
1. Pins B3 and A2 have identical capacitances as pins B7 and A8.
2. For a Read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair
DQS & DQS and input data masking function is disabled.
3. The function of DM or RDQS/RDQS is enabled by EMRS command.
1
2
3
4
5
6
7
8
9
Ball Locations (x8)
A
B
C
D
E
F
G
H
J
Populated ball
Ball not populated
Top view
(See the balls through package)
K
L
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Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
3.2 x16 Package Pinout (Top view) : 84ball FBGA Package
1
2
3
4
5
6
7
8
9
V
V
V
V
DDQ
A
B
C
D
E
F
NC
UDQS
DD
SS
SSQ
V
V
DQ14
UDM
UDQS
DQ15
SSQ
SSQ
V
V
V
V
DQ9
DQ8
DDQ
DDQ
DDQ
DDQ
V
V
DQ12
DQ11
DQ10
DQ13
SSQ
SSQ
V
V
V
V
NC
LDQS
DD
SS
SSQ
DDQ
V
V
DQ6
LDM
LDQS
DQ7
SSQ
SSQ
V
V
V
V
G
H
DQ1
DQ0
DDQ
DDQ
DDQ
DDQ
V
V
DQ4
DQ3
DQ2
DQ5
SSQ
SSQ
V
V
V
V
V
J
K
L
CK
CK
CS
A0
DD
REF
SS
SS
DD
CKE
BA0
WE
BA1
A1
RAS
CAS
A2
ODT
BA2
V
M
A10/AP
DD
V
N
P
R
A3
A7
A5
A9
NC
A6
A11
NC
A4
A8
NC
SS
V
SS
V
A12
DD
1
2
3
4
5
6
7
8
9
Ball Locations (x16)
A
B
C
D
E
F
Populated ball
Ball not populated
G
H
J
Top view
(See the balls through package)
K
L
M
N
P
R
- 6 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
3.3 FBGA Package Dimension (x8)
Units : Millimeters
7.50 ± 0.10
A
0.80 x 8 = 6. 40
# A1 INDEX MARK
3.20
1.60
(Datum A)
0.80
7
B
9
8
6
5
4
3
2
1
A
B
(Datum B)
C
D
E
F
G
H
J
K
L
(0.30)
MOLDING AREA
60-0.48 Solder ball
(Post reflow 0.50 0.05)
(0.60)
0.2 M
A B
BOTTOM VIEW
7.50 ± 0.10
#A1
0.37±0.05
0.9±0.1
TOP VIEW
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Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
3.4 FBGA Package Dimension (x16)
Units : Millimeters
7.50 ± 0.10
A
0.80 x 8 = 6. 40
# A1 INDEX MARK
3.20
1.60
0.80
7
B
9
8
6
5
4
3
2
1
(Datum A)
A
B
C
D
(Datum B)
E
F
G
H
J
K
L
M
N
P
R
(0.30)
MOLDING AREA
84-0.48 Solder ball
(Post reflow 0.50 0.05)
(0.60)
0.2 M
A B
BOTTOM VIEW
7.50 ± 0.10
#A1
0.37±0.05
0.9±0.1
TOP VIEW
- 8 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
4. Input/Output Functional Description
Symbol
Type
Function
Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of
the positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK
(both directions of crossing).
CK, CK
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and
output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or
Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh
entry. CKE is asynchronous for self refresh exit. After V
has become stable during the power on and initialization
REF
CKE
CS
Input
Input
sequence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, V
REF
must be maintained to this input. CKE must be maintained high throughout read and write accesses. Input buffers,
excluding CK, CK, ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during
self refresh.
Chip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank selection on
systems with multiple Ranks. CS is considered part of the command code.
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When
enabled, ODT is only applied to each DQ, DQS, DQS, RDQS, RDQS, and DM signal for x4/x8 configurations. For
x16 configuration ODT is applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal. The ODT pin will
be ignored if the Extended Mode Register (EMRS(1)) is programmed to disable ODT.
ODT
RAS, CAS, WE
DM
Input
Input
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coinci-
dent with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input
only, the DM loading matches the DQ and DQS loading. For x8 device, the function of DM or RDQS/RDQS is enabled
by EMRS command.
Bank Address Inputs: BA0, BA1 and BA2 define to which bank an Active, Read, Write or Precharge command is
being applied. Bank address also determines if the mode register or extended mode register is to be accessed during
a MRS or EMRS cycle.
BA0 - BA2
Input
Input
Address Inputs: Provided the row address for Active commands and the column address and Auto Precharge bit for
Read/Write commands to select one location out of the memory array in the respective bank. A10 is sampled during a
Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code
during Mode Register Set commands.
A0 - A13
DQ
Input/Output Data Input/ Output: Bi-directional data bus.
Data Strobe: output with read data, input with write data. Edge-aligned with read data, centered in write data. For the
x16, LDQS corresponds to the data on DQ0-DQ7; UDQS corresponds to the data on DQ8-DQ15. For the x8, an
RDQS option using DM pin can be enabled via the EMRS(1) to simplify read timing. The data strobes DQS, LDQS,
UDQS, and RDQS may be used in single ended mode or paired with optional complementary signals DQS, LDQS,
UDQS, and RDQS to provide differential pair signaling to the system during both reads and writes. An EMRS(1) con-
trol bit enables or disables all complementary data strobe signals.
DQS, (DQS)
(LDQS), (LDQS)
(UDQS),
In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)
x4 DQS/DQS
Input/Output
(UDQS)
x8 DQS/DQS
if EMRS(1)[A11] = 0
(RDQS),
x8 DQS/DQS, RDQS/RDQS,
if EMRS(1)[A11] = 1
(RDQS)
x16 LDQS/LDQS and UDQS/UDQS
"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)
x4 DQS
x8 DQS if EMRS(1)[A11] = 0
x8 DQS, RDQS, if EMRS(1)[A11] = 1
x16 LDQS and UDQS
NC
No Connect: No internal electrical connection is present.
Power Supply: 1.8V +/- 0.1V, DQ Power Supply: 1.8V +/- 0.1V
Ground, DQ Ground
V
/ V
/ V
Supply
Supply
Supply
Supply
Supply
DD
DDQ
V
SS
SSQ
V
DLL Power Supply: 1.8V +/- 0.1V
DLL Ground
DDL
V
SSDL
V
Reference voltage
REF
- 9 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
5. DDR2 SDRAM Addressing
1Gb Addressing
Configuration
# of Bank
256Mb x4
8
128Mb x 8
8
64Mb x16
8
Bank Address
Auto precharge
Row Address
Column Address
BA0 ~ BA2
A10/AP
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
BA0 ~ BA2
A10/AP
A0 ~ A12
A0 ~ A9
A0 ~ A13
A0 ~ A9,A11
* Reference information: The following tables are address mapping information for other densities.
256Mb
Configuration
# of Bank
64Mb x4
4
32Mb x 8
4
16Mb x16
4
Bank Address
Auto precharge
Row Address
Column Address
BA0,BA1
A10/AP
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A8
A0 ~ A12
A0 ~ A9,A11
512Mb
Configuration
# of Bank
128Mb x4
4
64Mb x 8
4
32Mb x16
4
Bank Address
Auto precharge
Row Address
Column Address
BA0,BA1
A10/AP
BA0,BA1
A10/AP
A0 ~ A13
A0 ~ A9
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
A0 ~ A13
A0 ~ A9,A11
2Gb
Configuration
# of Bank
512Mb x4
8
256Mb x 8
8
128Mb x16
8
Bank Address
Auto precharge
Row Address
Column Address
BA0 ~ BA2
A10/AP
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
A0 ~ A14
A0 ~ A9,A11
4Gb
Configuration
# of Bank
1 Gb x4
8
512Mb x 8
8
256Mb x16
8
Bank Address
Auto precharge
Row Address
Column Address
BA0 ~ BA2
A10/AP
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9
BA0 ~ BA2
A10/AP
A0 - A14
A0 - A9
A0 - A15
A0 - A9,A11
- 10 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
6. Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
NOTE
Voltage on V pin relative to V
V
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
1
1
DD
SS
DD
Voltage on V
Voltage on V
pin relative to V
V
V
DDQ
DDL
SS
SS
DDQ
pin relative to V
V
V
1
DDL
Voltage on any pin relative to V
Storage Temperature
V
V
V
1
SS
IN, OUT
T
C
1, 2
STG
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than 500mV, VREF
may be equal to or less than 300mV.
4. Voltage on any input or I/O may not exceed voltage on VDDQ
.
7. AC & DC Operating Conditions
7.1 Recommended DC operating Conditions (SSTL_1.8)
Rating
Typ.
1.8
Symbol
Parameter
Units
NOTE
Min.
1.7
Max.
1.9
V
Supply Voltage
V
V
DD
V
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
1.7
1.8
1.8
1.9
4
4
DDL
V
1.7
1.9
V
DDQ
V
0.49*V
0.50*V
0.51*V
DDQ
mV
V
1,2
3
REF
DDQ
DDQ
V
V
-0.04
V
V
+0.04
REF
TT
REF
REF
NOTE :There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting
device and VREF is expected to track variations in VDDQ
.
.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
- 11 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
7.2 Operating Temperature Condition
Symbol
Parameter
Rating
Units
Notes
T
Operating Temperature
-40 to 95
C
1, 2
OPER
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard.
7.3 Input DC Logic Level
Symbol
Parameter
Min.
Max.
Units
Notes
VIH(DC)
VREF + 0.125
VDDQ + 0.3
V
DC input logic high
DC input logic low
VIL(DC)
- 0.3
VREF - 0.125
V
7.4 Input AC Logic Level
DDR2-667, DDR2-800
Symbol
Parameter
Units
Min.
+ 0.200
Max.
V
(AC)
V
V
V
+ V
PEAK
V
V
AC input logic high
AC input logic low
IH
REF
DDQ
V (AC)
- V
V
- 0.200
REF
IL
SSQ
PEAK
NOTE :
1. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
tude allowed for overshoot and undershoot.
7.5 AC Input Test Conditions
Symbol
Condition
Value
0.5 * V
Units
Notes
V
Input reference voltage
V
1
REF
DDQ
V
Input signal maximum peak to peak swing
Input signal minimum slew rate
1.0
1.0
V
1
SWING(MAX)
SLEW
V/ns
2, 3
NOTE :
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC) max for falling edges as
shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions.
VDDQ
VIH(AC)min
V
IH(DC)min
VSWING(MAX)
VREF
VIL(DC)max
VIL(AC)max
VSS
delta TF
V
delta TR
Rising Slew =
REF - VIL(AC)max
delta TF
VIH(AC)min - VREF
delta TR
Falling Slew =
< AC Input Test Signal Waveform >
- 12 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
7.6 Differential input AC logic Level
Symbol
Parameter
Min.
Max.
Units
Notes
V
(AC)
0.5
V
V
1
AC differential input voltage
AC differential cross point voltage
ID
DDQ
V (AC)
0.5 * V
- 0.175
0.5 * V + 0.175
DDQ
V
2
IX
DDQ
NOTE :
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP is the com-
plementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to VIH (AC) - VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ . VIX(AC) indicates the voltage
at which differential input signals must cross.
3. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
tude allowed for overshoot and undershoot.
V
DDQ
V
TR
Crossing point
V
ID
V
V
IX or OX
V
CP
V
SSQ
< Differential signal levels >
7.7 Differential AC output parameters
Symbol
Parameter
Min.
- 0.125
Max.
0.5 * V + 0.125
DDQ
Units
Note
V
(AC)
0.5 * V
V
1
AC differential cross point voltage
OX
DDQ
NOTE :
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ
VOX(AC) indicates the voltage at which differential output signals must cross.
.
8. ODT DC electrical characteristics
PARAMETER/CONDITION
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
SYMBOL
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
delta VM
MIN
60
NOM
75
MAX
90
UNITS
ohm
ohm
ohm
%
NOTES
1
1
1
1
120
40
150
50
180
60
Deviation of VM with respect to V
/2
- 6
+ 6
DDQ
NOTE : Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH (AC)) and I( VIL (AC)) respectively. VIH (AC), VIL (AC)(DC),
and VDDQ values defined in SSTL_18
V
(AC) - V (AC)
IL
IH
Rtt(eff) =
I(V (AC)) - I(V (AC))
IH
IL
2 x VM
VDDQ
- 1
x 100%
delta VM =
Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.
- 13 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
9. OCD default characteristics
Description
Parameter
Min
Nom
18ohm at norminal condition
Max
Unit
Notes
Output impedance
See full strength default driver characteristics
on device operation specification
ohm
1,2
Output impedance step size for OCD calibration
Pull-up and pull-down mismatch
Output slew rate
0
0
1.5
4
ohm
ohm
V/ns
6
1,2,3
Sout
1.5
5
1,4,5,6,7,8
NOTE :
1. Absolute Specifications (-40°C TCASE +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
2. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT
between VDDQ and VDDQ- 280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for
values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-down, both are measured at same temperature and voltage.
4. Slew rate measured from VIL(AC) to VIH(AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is
guaranteed by design and characterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
V
TT
25 ohm
Output
Reference
Point
(V
)
OUT
7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mismatch between DQS / DQS and associated DQ is included in tDQSQ and tQHS specification.
- 14 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
10. IDD Specification Parameters and Test Conditions
(IDD values are for full operating range of Voltage and Temperature, Notes 1 - 5)
Symbol
Proposed Conditions
Operating one bank active-precharge current;
Units
Notes
IDD0
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD =
tRCD(IDD); CKE is HIGH, CS is HIGH between valid commands; Address businputs are SWITCHING; Data pattern
is same as IDD4W
IDD1
mA
Precharge power-down current;
IDD2P
IDD2Q
IDD2N
IDD3P
IDD3N
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
mA
mA
mA
Precharge quiet standby current;
t
All banks idle; tCK = CK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputsare STABLE; Data
bus inputs are FLOATING
Precharge standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Active power-down current;
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus
mA
mA
Fast PDN Exit MRS(12) = 0
Slow PDN Exit MRS(12) = 1
inputs are STABLE; Data bus inputs are FLOATING
Active standby current;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
mA
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
IDD4W
IDD4R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as IDD4W
mA
mA
Burst auto refresh current;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid com-
mands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
IDD5B
IDD6
Self refresh current;
Normal
mA
mA
CK and CK at 0V; CKE 0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
Low Power
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC
= tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid
commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the fol-
lowing page for detailed timing conditions
IDD7
mA
- 15 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
NOTE :
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
LOW is defined as VIN VIL(AC)max
HIGH is defined as VIN VIH(AC)min
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control
signals, and
inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including
masks or strobes.
For purposes of IDD testing, the following parameters are utilized
DDR2-800
DDR2-800
DDR2-667
Units
Parameter
CL(IDD)
5-5-5
6-6-6
5-5-5
5
6
5
tCK
tRCD(IDD)
tRC(IDD)
12.5
57.5
15
60
15
60
ns
ns
tRRD(IDD)-x4/x8
tRRD(IDD)-x16
tCK(IDD)
ns
ns
7.5
7.5
7.5
10
2.5
10
2.5
10
3
ns
ns
ns
ns
tRASmin(IDD)
tRP(IDD)
45
45
45
12.5
127.5
15
15
tRFC(IDD)
127.5
127.5
Detailed IDD7
The detailed timings are shown below for IDD7.
Legend: A = Active; RA = Read ‘with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) and tFAW(IDD) using a burst length of 4. Control and address bus inputs are STABLE during
DESELECTs. IOUT = 0mA
Timing Patterns for 8bank devices x8
-DDR2-667 5/5/5 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D
-DDR2-800 6/6/6 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
-DDR2-800 5/5/5 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
Timing Patterns for 8bank devices x16
-DDR2-667 5/5/5 : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D
-DDR2-800 6/6/6 : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D
-DDR2-800 5/5/5 : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D
- 16 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
11. DDR2 SDRAM IDD Spec Table
128Mx8 (K4T1G084QG)
800@CL=6
Symbol
Unit
Notes
800@CL=5
667@CL=5
IE7
PE7
IF7
PF7
IE6
PE6
IDD0
IDD1
37
45
37
45
35
40
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5
10
5
10
5
10
5
20
25
20
17
30
60
70
90
20
25
20
17
30
60
70
90
19
22
18
17
30
55
65
85
IDD6
10
5
10
5
10
5
IDD7
135
135
125
64Mx16 (K4T1G164QG)
800@CL=6
Symbol
Unit
Notes
800@CL=5
667@CL=5
IE7
PE7
IF7
PF7
IE6
PE6
IDD0
IDD1
45
55
45
55
40
50
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5
10
5
10
5
10
5
20
25
20
17
35
80
90
90
20
25
20
17
35
80
90
90
20
23
20
17
35
75
90
90
IDD6
10
5
10
5
10
5
IDD7
150
150
140
- 17 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
12. Input/Output capacitance
DDR2-667
DDR2-800
Parameter
Symbol
Units
Min
1.0
x
Max
2.0
Min
Max
2.0
Input capacitance, CK and CK
CCK
CDCK
CI
1.0
x
pF
pF
pF
pF
pF
pF
Input capacitance delta, CK and CK
0.25
2.0
0.25
1.75
0.25
3.5
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
1.0
x
1.0
x
CDI
0.25
3.5
CIO
2.5
x
2.5
x
CDIO
0.5
0.5
13. Electrical Characteristics & AC Timing for DDR2-800/667
(-40 C < TOPER < 95 C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V)
13.1 Refresh Parameters by Device Density
Parameter
Symbol
512Mb
105
1Gb
127.5
7.8
Units
Refresh to active/Refresh command time
Average periodic refresh interval
tRFC
tREFI
ns
-40CT
95C
7.8
s
CASE
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
tRCD
DDR2-800(E7)
DDR2-800(F7)
DDR2-667(E6)
5 - 5 - 5
5-5-5
6-6-6
Units
min
max
min
max
min
max
5
8
-
3.75
3
-
5
3.75
3
8
ns
ns
ns
ns
ns
ns
ns
ns
3.75
2.5
-
8
8
8
8
8
8
-
2.5
15
15
60
45
8
-
-
12.5
12.5
57.5
45
-
-
15
15
60
45
-
tRP
-
-
-
-
-
-
tRC
tRAS
70000
70000
70000
- 18 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
13.3 Timing Parameters by Speed Grade
(For information related to the entries in this table, refer to both the general notes and the specific notes following this table.)
DDR2-800
DDR2-667
Notes
Parameter
Symbol
Units
min
max
400
min
max
450
DQ output access time from CK/CK
DQS output access time from CK/CK
Average clock HIGH pulse width
Average clock LOW pulse width
tAC
-400
-350
0.48
0.48
-450
-400
0.48
0.48
ps
40
40
tDQSCK
tCH(avg)
tCL(avg)
350
400
ps
0.52
0.52
0.52
0.52
tCK(avg)
tCK(avg)
35,36
35,36
Min(tCL(abs),
tCH(abs))
Min(tCL(abs),
tCH(abs))
CK half pulse period
tHP
x
x
ps
37
Average clock period
tCK(avg)
tDH(base)
tDS(base)
tIPW
2500
8000
3000
8000
ps
ps
35,36
DQ and DM input hold time
125
x
175
x
6,7,8,21,28,31
6,7,8,20,28,31
DQ and DM input setup time
50
x
100
x
ps
Control & Address input pulse width for each input
DQ and DM input pulse width for each input
Data-out high-impedance time from CK/CK
DQS/DQS low-impedance time from CK/CK
DQ low-impedance time from CK/CK
DQS-DQ skew for DQS and associated DQ signals
DQ hold skew factor
0.6
x
0.6
x
tCK(avg)
tCK(avg)
ps
tDIPW
tHZ
0.35
x
0.35
x
x
tAC(max)
x
tAC(max)
18,40
18,40
18,40
13
tLZ(DQS)
tLZ(DQ)
tDQSQ
tQHS
tAC(min)
tAC(max)
tAC(min)
tAC(max)
ps
2* tAC(min)
tAC(max)
2* tAC(min)
tAC(max)
ps
x
x
200
300
x
x
x
240
340
x
ps
ps
38
DQ/DQS output hold time from DQS
DQS latching rising transitions to associated clock edges
DQS input HIGH pulse width
tQH
tHP - tQHS
- 0.25
0.35
0.35
0.2
tHP - tQHS
-0.25
0.35
0.35
0.2
ps
39
tDQSS
tDQSH
tDQSL
tDSS
0.25
x
0.25
x
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
nCK
30
DQS input LOW pulse width
x
x
DQS falling edge to CK setup time
DQS falling edge hold time from CK
Mode register set command cycle time
MRS command to ODT update delay
Write postamble
x
x
30
30
tDSH
0.2
x
0.2
x
tMRD
2
x
2
x
tMOD
0
12
0.6
x
0
12
0.6
x
ns
32
10
tWPST
tWPRE
tIH(base)
tIS(base)
tRPRE
tRPST
0.4
0.4
tCK(avg)
tCK(avg)
ps
Write preamble
0.35
250
175
0.9
0.35
275
200
0.9
Address and control input hold time
Address and control input setup time
Read preamble
x
x
5,7,9,23,29
5,7,9,22,29
19,41
x
x
ps
1.1
0.6
x
1.1
0.6
x
tCK(avg)
tCK(avg)
ns
Read postamble
0.4
0.4
19,42
Activate to activate command period for 1KB page size products tRRD
Activate to activate command period for 2KB page size products tRRD
7.5
7.5
4,32
10
x
10
x
ns
4,32
- 19 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
DDR2-800
Symbol
DDR2-667
Notes
Parameter
Units
min
max
min
max
Four Activate Window for 1KB page size products
Four Activate Window for 2KB page size products
CAS to CAS command delay
tFAW
tFAW
tCCD
tWR
35
x
x
x
x
x
x
x
x
x
x
x
37.5
x
x
x
x
x
x
x
x
x
x
x
ns
ns
32
32
45
50
2
2
nCK
ns
Write recovery time
15
15
32
33
Auto precharge write recovery + precharge time
Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
tDAL
WR + tnRP
WR + tnRP
nCK
ns
tWTR
tRTP
tXSNR
tXSRD
tXP
7.5
7.5
24,32
3,32
32
7.5
7.5
ns
tRFC + 10
tRFC + 10
ns
200
2
200
2
nCK
nCK
nCK
Exit precharge power down to any command
Exit active power down to read command
tXARD
2
2
1
Exit active power down to read command
(slow exit, lower power)
tXARDS
8 - AL
x
7 - AL
x
nCK
1,2
CKE minimum pulse width (HIGH and LOW pulse width)
tCKE
3
2
x
3
2
x
nCK
nCK
ns
27
16
ODT turn-on delay
ODT turn-on
tAOND
tAON
2
2
tAC(min)
tAC(max)+0.7
tAC(min)
tAC(max)+0.7
6,16,40
2*tCK(avg)
+tAC(max)+1
2*tCK(avg)
+tAC(max)+1
ODT turn-on (Power-Down mode)
tAONPD
tAC(min)+2
tAC(min)+2
ns
ODT turn-off delay
ODT turn-off
tAOFD
tAOF
2.5
2.5
2.5
2.5
nCK
ns
17,45
tAC(min)
tAC(max)+0.6
tAC(min)
tAC(max)+0.6
17,43,45
2.5*tCK(avg)+
tAC(max)+1
2.5*tCK(avg)+
tAC(max)+1
ODT turn-off (Power-Down mode)
tAOFPD
tAC(min)+2
tAC(min)+2
ns
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
tANPD
tAXPD
tOIT
3
8
0
x
x
3
8
0
x
x
nCK
nCK
ns
12
12
32
15
Minimum time clocks remains ON after CKE asynchronously
drops LOW
tIS+tCK(avg)
+tIH
tIS+tCK(avg)
+tIH
tDelay
x
x
ns
- 20 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
14. General notes, which may apply for all AC parameters
1. DDR2 SDRAM AC timing reference load
Figure 1 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise repre
sentation of the typical system environment or a depiction of the actual load presented by a production tester. System designers will use IBIS or other sim-
ulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a
coaxial transmission line terminated at the tester electronics).
V
DDQ
DQ
DQS
DQS Output
RDQS
DUT
V
= V
/2
DDQ
TT
RDQS
25
Timing
reference
point
Figure 1. AC Timing Reference Load
The output timing reference voltage level for single ended signals is the crosspoint with V . The output timing reference voltage level for differential
TT
signals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS) signal.
2. Slew Rate Measurement Levels
a) Output slew rate for falling and rising edges is measured between V - 250 mV and V + 250 mV for single ended signals. For differential signals
TT
TT
(e.g. DQS - DQS) output slew rate is measured between DQS - DQS = - 500 mV and DQS - DQS = + 500 mV. Output slew rate is guaranteed by
design, but is not necessarily tested on each device.
b) Input slew rate for single ended signals is measured from V
(DC) to V (AC),min for rising edges and from V
(DC) to V (AC),max for falling
REF IL
REF
IH
edges. For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = - 250 mV to CK - CK = + 500 mV (+ 250 mV to -
500 mV for falling edges).
c) V is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or between DQS and DQS for differential strobe.
ID
3. DDR2 SDRAM output slew rate test load
Output slew rate is characterized under the test conditions as shown in Figure 2.
V
DDQ
DUT
DQ
Output
Test point
DQS, DQS
V
= V
/2
TT
DDQ
RDQS, RDQS
25
Figure 2. Slew Rate Test Load
- 21 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
4. Differential data strobe
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the EMRS "Enable DQS" mode bit;
timing advantages of differential mode are realized in system design. The method by which the DDR2 SDRAM pin timings are measured is mode depen-
dent. In single ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at V
. In differential mode, these
REF
timing relationships are measured relative to the crosspoint of DQS and its complement, DQS. This distinction in timing methods is guaranteed by design
and characterization. Note that when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied externally to V
SS
through a 20 to 10 k resistor to insure proper operation.
tDQSH
tDQSL
DQS
DQS
DQS
DQS
tWPRE
tWPST
VIH(DC)
VIL(DC)
VIH(AC)
DQ
DM
D
D
D
D
VIL(AC)
tDH
VIH(DC)
tDS
tDH
DMin
tDS
VIH(AC)
DMin
DMin
DMin
VIL(AC)
VIL(DC)
Figure 3. Data Input (Write) Timing
tCH
tCL
CK
CK
CK/CK
DQS
DQS
DQS/DQS
DQ
tRPRE
tRPST
Q
Q
Q
Q
tDQSQ(max)
tDQSQ(max)
tQH
tQH
Figure 4. Data Output (Read) Timing
5. AC timings are for linear signal transitions. See Specific Notes on derating for other signal transitions.
6. All voltages are referenced to V
.
SS
7. These parameters guarantee device behavior, but they are not necessarily tested on each device.
They may be guaranteed by device design or tester correlation.
8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/supply voltage levels, but the related
specifications and device operation are guaranteed for the full voltage range specified.
- 22 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
15. Specific Notes for dedicated AC parameters
1. User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active power down exit timing.
tXARDS is expected to be used for slow active power down exit timing.
2. AL = Additive Latency.
3. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min) have been satisfied.
4. A minimum of two clocks (2 x tCK or 2 x nCK) is required irrespective of operating frequency.
5. Timings are specified with command/address input slew rate of 1.0 V/ns.
6. Timings are specified with DQs, DM, and DQS’s (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns.
7. Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in
differential strobe mode and a slew rate of 1.0 V/ns in single ended mode.
8. Data setup and hold time derating.
[ Table 1 ] DDR2-400/533 tDS/tDH derating with differential data strobe
tDS, tDH Derating Values of DDR2-400, DDR2-533 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
125
45
21
0
-
125
45
125
83
0
45
21
0
-
95
12
1
-
33
12
-2
-19
-42
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
83
0
-
83
21
-
-
-
-
0
0
24
13
-1
-19
-43
-
24
10
-7
-30
-59
-
-
-
-
-
-
-
-
-
-
DQ
Siew
rate
-11
-14
-11
-25
-
-14
-31
-
25
11
-7
-31
-74
-
22
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-13
-31
-
23
5
17
-6
-35
-77
-
-
-
-
-
-
-18
-47
-89
-
17
-7
-50
6
-
-
V/ns
-
-
-
-
-19
-62
-23
-65
5
-11
-53
-
-
-
-
-
-
-38
-
-
-
-
-
-
-
-
-127 -140 -115 -128 -103 -116
[ Table 2 ] DDR2-667/800 tDS/tDH derating with differential data strobe
tDS, tDH Derating Values for DDR2-667, DDR2-800 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
100
45
21
0
-
100
45
100
67
0
45
21
0
-
79
12
7
-
33
12
-2
-19
-42
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
67
0
-
67
0
-5
-
21
-
-
-
0
24
19
11
2
24
10
-7
-30
-59
-
-
-
-
-
-
-
-
-
DQ
Slew
rate
-14
-5
-13
-
-14
-31
-
31
23
14
2
22
5
-
-
-
-
-
-
-
-
-
-
-
-
-1
-10
-
35
26
14
-12
-52
17
-6
-
-
-
-
-
-
-
-18
-47
-89
-
38
26
0
6
-
-
V/ns
-
-
-
-
-
-10
-
-35
-77
-140
-23
-65
-128
38
12
-28
-11
-53
-116
-
-
-
-
-
-
-
-24
-
-
-
-
-
-
-
-
-
-
-40
- 23 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
[ Table 3 ] DDR2-400/533 tDS1/tDH1 derating with single-ended data strobe
tDS1, tDH1 Derating Values for DDR2-400, DDR2-533(All units in ‘ps’; the note applies to the entire table)
DQS Single-ended Slew Rate
2.0 V/ns
1.5 V/ns
1.0 V/ns
0.9 V/ns
0.8 V/ns
0.7 V/ns
0.6 V/ns
0.5 V/ns
0.4 V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
1
1
1
167
125
42
31
-
1
146
125
83
69
-
1
125
83
0
1
63
42
0
1
1
1
1
1
1
1
1
1
1
1
-
-
-
-
-
-
1
-
-
-
-
-
-
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
188
188
-
-
-
-
-
-
-
-
-
-
-
146
167
81
-2
-13
-27
-45
-
43
1
-
-
-
-
-
-
-
-
63
-
125
-7
-18
-32
-50
-74
-
-13
-27
-44
-67
-96
-
-
-
-
-
-
DQ
Slew
rate
-
-
-
-
-
-
-11
-25
-
-14
-31
-
-13
-30
-53
-
-29
-43
-61
-85
-45
-62
-85
-
-
-
-
-
-60
-78
-86
-
-
-
-
-
-109 -108 -152
V/ns
-
-
-
-
-
-114 -102 -138 -138 -181 -183 -246
-
-
-
-
-
-
-
-128 -156 -145 -180 -175 -223 -226 -288
-210 -243 -240 -286 -291 -351
-
-
-
-
-
-
-
-
-
-
-
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value to the
tDS and tDH derating value respectively. Example: tDS (total setup time) =tDS(base) +tDS.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V
(DC) and the first crossing of V (AC)min.
IH
REF
Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V
(DC) and the first crossing of V (AC)max. If
IL
REF
the actual signal is always earlier than the nominal slew rate line between shaded ’V
(DC) to ac region’, use nominal slew rate for derating value (See
REF
Figure 5 for differential data strobe and Figure 6 for single-ended data strobe.) If the actual signal is later than the nominal slew rate line anywhere
between shaded ’V (DC) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value (see Fig-
REF
ure 7 for differential data strobe and Figure 8 for single-ended data strobe)
Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V (DC)max and the first crossing of V
(DC).
REF
IL
Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V (DC)min and the first crossing of V
(DC). If
REF
IH
the actual signal is always later than the nominal slew rate line between shaded ’dc level to V
(DC) region’, use nominal slew rate for derating value
REF
(see Figure 9 for differential data strobe and Figure 10 for single-ended data strobe) If the actual signal is earlier than the nominal slew rate line anywhere
between shaded ’dc to V (DC) region’, the slew rate of a tangent line to the actual signal from the dc level to V (DC) level is used for derating value
REF
REF
(see Figure 11 for differential data strobe and Figure 12 for single-ended data strobe)
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached V
(AC) at the time of the rising clock
IH/IL
transition) a valid input signal is still required to complete the transition and reach V
(AC).
IH/IL
For slew rates in between the values listed in Table 1, Table 2 and Table 3 the derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
- 24 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
DQS
DQS
tDH
tDH
tDS
tDS
V
V
DDQ
(AC)min
IH
V
to ac
REF
region
V
(DC)min
IH
nominal
slew rate
V
(DC)
REF
nominal slew
rate
V (DC)max
IL
V
to ac
REF
region
V (AC)max
IL
tVAC
V
SS
TF
TR
V
(DC) - V (AC)max
V
(AC)min - V
(DC)
REF
REF
IL
Setup Slew Rate
Rising Signal
IH
Setup Slew Rate
Falling Signal
=
=
TF
TR
Figure 5. IIIustration of nominal slew rate for tDS (differential DQS,DQS)
- 25 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
V
V
V
DDQ
(AC)min
IH
DQS
Note1
(DC)min
VIH (DC)
REF
V (DC)max
V (AC)max
V
IL
IL
SS
tDH
tDS
tDS
tDH
V
DDQ
V
(AC)min
IH
V
to ac
REF
region
V
(DC)min
IH
nominal
slew rate
V
(DC)
REF
nominal slew
rate
V (DC)max
IL
V
to ac
REF
region
V (AC)max
IL
V
SS
TF
V
TR
(DC) - V (AC)max
IL
V
(AC)min - V
(DC)
REF
REF
Setup Slew Rate
Rising Signal
IH
Setup Slew Rate
Falling Signal
=
=
TF
TR
NOTE : DQS signal must be monotonic between VIL(AC)max and VIH(AC)min.
Figure 6. IIIustration of nominal slew rate for tDS (single-ended DQS)
- 26 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
DQS
DQS
tDH
tDH
tDS
tDS
V
V
V
DDQ
nominal
line
(AC)min
(DC)min
IH
IH
V
to ac
REF
region
tangent
line
V
(DC)
REF
tangent
line
V (DC)max
IL
V
to ac
REF
region
V (AC)max
IL
nominal
line
TR
V
SS
tangent line[V (AC)min - V
(DC)]
REF
IH
Setup Slew Rate
Rising Signal
=
TF
TR
tangent line[V
(DC) - V (AC)max]
IL
Setup Slew Rate
Falling Signal
REF
=
TF
Figure 7. IIIustration of tangent line for tDS (differential DQS, DQS)
- 27 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
V
V
V
DDQ
(AC)min
IH
DQS
Note1
(DC)min
VIH (DC)
REF
V (DC)max
V (AC)max
V
IL
IL
SS
tDH
tDS
tDS
tDH
V
V
V
DDQ
nominal
line
(AC)min
(DC)min
IH
IH
V
to ac
REF
region
tangent
line
V
(DC)
REF
tangent
line
V (DC)max
IL
V
to ac
REF
region
V (AC)max
IL
nominal
line
TR
V
SS
tangent line[V (AC)min - V
(DC)]
IH
REF
Setup Slew Rate
Rising Signal
=
TR
TF
tangent line[V
(DC) - V (AC)max]
Setup Slew Rate
Falling Signal
REF
IL
=
TF
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 8. IIIustration of tangent line for tDS (single-ended DQS)
- 28 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
DQS
DQS
tDH
tDH
tDS
tDS
V
V
V
DDQ
(AC)min
(DC)min
IH
IH
dc to V
region
REF
nominal
slew rate
V
(DC)
REF
nominal
slew rate
dc to V
region
REF
V (DC)max
IL
V (AC)max
IL
V
SS
TF
TR
Hold Slew Rate
V
(DC) - V (DC)max
Hold Slew Rate
Rising Signal
REF
IL
V
(DC)min - V
(DC)
IH
REF
=
=
TR
Falling Signal
TF
Figure 9. IIIustration of nominal slew rate for tDH (differential DQS, DQS)
- 29 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
V
V
V
DDQ
(AC)min
IH
DQS
Note1
(DC)min
VIH (DC)
REF
V (DC)max
V (AC)max
V
IL
IL
SS
tDH
tDS
tDS
tDH
V
V
V
DDQ
(AC)min
(DC)min
IH
IH
dc to V
region
REF
nominal
slew rate
V
(DC)
REF
nominal
slew rate
dc to V
region
REF
V (DC)max
IL
V (AC)max
IL
V
SS
TF
TR
Hold Slew Rate
V
(DC) - V (DC)max
Hold Slew Rate
Rising Signal
REF
IL
V
(DC)min - V
(DC)
REF
IH
=
=
TR
Falling Signal
TF
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 10. IIIustration of nominal slew rate for tDH (single-ended DQS)
- 30 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
DQS
DQS
tDH
tDH
tDS
tDS
V
V
V
DDQ
(AC)min
(DC)min
IH
IH
nominal
line
dc to V
region
REF
tangent
line
V
(DC)
REF
tangent
line
dc to V
region
REF
nominal
line
V (DC)max
IL
V (AC)max
IL
V
SS
TF
TR
(DC) - V (DC)max ]
tangent line [ V
REF
IL
Hold Slew Rate
Rising Signal
=
TR
tangent line [ V (DC)min - V
(DC) ]
REF
IH
Hold Slew Rate
Falling Signal
=
TF
Figure 11. IIIustration of tangent line for tDH (differential DQS, DQS)
- 31 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
V
V
V
DDQ
(AC)min
IH
DQS
Note1
(DC)min
VIH (DC)
REF
V (DC)max
V (AC)max
V
IL
IL
SS
tDH
tDS
tDS
tDH
V
V
V
DDQ
(AC)min
(DC)min
IH
nominal
line
IH
dc to V
region
REF
tangent
line
V
(DC)
REF
tangent
line
dc to V
region
REF
nominal
line
V (DC)max
IL
V (AC)max
IL
V
SS
TF
TR
(DC) - V (DC)max ]
tangent line [ V
REF
IL
Hold Slew Rate
Rising Signal
=
TR
tangent line [ V (DC)min - V
(DC) ]
REF
IH
Hold Slew Rate
Falling Signal
=
TF
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 12. IIIustration of tangent line for tDH (single-ended DQS)
- 32 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
9. tIS and tIH (input setup and hold) derating
[ Table 4 ] Derating values for DDR2-400, DDR2-533
tIS, tIH Derating Values for DDR2-400, DDR2-533
CK, CK Differential Slew Rate
2.0 V/ns
1.5 V/ns
1.0 V/ns
Units
Notes
tIS
+187
+179
+167
+150
+125
+83
tIH
+94
+89
+83
+75
+45
+21
0
tIS
+217
+209
+197
+180
+155
+113
+30
tIH
+124
+119
+113
+105
+75
tIS
+247
+239
+227
+210
+185
+143
+60
tIH
+154
+149
+143
+135
+105
+81
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.25
0.2
0.15
0.1
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
+51
0
+30
+60
-11
-14
+19
+16
+49
+46
Command/
Address Slew
rate(V/ns)
-25
-31
+5
-1
+35
+29
-43
-54
-13
-24
+17
+6
-67
-83
-37
-53
-7
-23
-110
-175
-285
-350
-525
-800
-1450
-125
-188
-292
-375
-500
-708
-1125
-80
-95
-50
-65
-145
-255
-320
-495
-770
-1420
-158
-262
-345
-470
-678
-1095
-115
-225
-290
-465
-740
-1390
-128
-232
-315
-440
-648
-1065
- 33 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
[ Table 5 ] Derating values for DDR2-667, DDR2-800
tIS and tIH Derating Values for DDR2-667, DDR2-800
CK, CK Differential Slew Rate
2.0 V/ns
1.5 V/ns
1.0 V/ns
Units
Notes
tIS
+150
+143
+133
+120
+100
+67
0
tIH
+94
+89
+83
+75
+45
+21
0
tIS
+180
+173
+163
+150
+130
+97
+30
+25
+17
+8
tIH
+124
+119
+113
+105
+75
tIS
+210
+203
+193
+180
+160
+127
+60
tIH
+154
+149
+143
+135
+105
+81
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.25
0.2
0.15
0.1
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
+51
+30
+60
-5
-14
+16
+55
+46
Command/
Address Slew
rate(V/ns)
-13
-31
-1
+47
+29
-22
-54
-24
+38
+6
-34
-83
-4
-53
+26
-23
-60
-125
-188
-292
-375
-500
-708
-1125
-30
-95
0
-65
-100
-168
-200
-325
-517
-1000
-70
-158
-262
-345
-470
-678
-1095
-40
-128
-232
-315
-440
-648
-1065
-138
-170
-295
-487
-970
-108
-140
-265
-457
-940
For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and tIH(base) value to the tIS
and tIH derating value respectively. Example: tIS (total setup time) = tIS(base) + tIS
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V
(DC) and the first crossing of V (AC)min.
IH
REF
Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V
(DC) and the first crossing of V (AC)max. If
IL
REF
the actual signal is always earlier than the nominal slew rate line between shaded ’V
(DC) to ac region’, use nominal slew rate for derating value (see
REF
Figure 13). If the actual signal is later than the nominal slew rate line anywhere between shaded ’V
the actual signal from the ac level to dc level is used for derating value (see Figure 14).
(DC) to ac region’, the slew rate of a tangent line to
REF
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V (DC)max and the first crossing of V
(DC).
REF
IL
Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V (DC)min and the first crossing of V
(DC). If
REF
IH
the actual signal is always later than the nominal slewrate line between shaded ’dc to V
(DC) region’, use nominal slew rate for derating value (see Fig-
REF
ure 15). If the actual signal is earlier than the nominal slew rate line anywhere between shaded ’dc to V
(DC) region’, the slew rate of a tangent line to
REF
the actual signal from the dc level to V
(DC) level is used for derating value (see Figure 16).
REF
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached V
(AC) at the time of the rising clock
IH/IL
transition) a valid input signal is still required to complete the transition and reach V
(AC).
IH/IL
For slew rates in between the values listed in Table 4 and Table 5 the derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
- 34 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
CK
CK
tIH
tIH
tIS
tIS
V
V
DDQ
(AC)min
IH
V
to ac
REF
region
V
(DC)min
IH
nominal
slew rate
V
(DC)
REF
nominal slew
rate
V (DC)max
IL
V
to ac
REF
region
V (AC)max
IL
V
SS
TF
TR
V
(DC) - V (AC)max
V
(AC)min - V
(DC)
REF
REF
IL
IH
Setup Slew Rate
Rising Signal
Setup Slew Rate
Falling Signal
=
=
TF
TR
Figure 13. IIIustration of nominal slew rate for tIS
- 35 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
CK
CK
tIH
tIH
tIS
tIS
V
V
DDQ
nominal
line
(AC)min
IH
V
to ac
REF
region
V
V
(DC)min
IH
tangent
line
(DC)
REF
tangent
line
V (DC)max
IL
V
to ac
REF
region
V (AC)max
IL
nominal
line
TR
V
SS
tangent line[V (AC)min - V
(DC)]
IH
REF
Setup Slew Rate
Rising Signal
=
TR
TF
tangent line[V
(DC) - V (AC)max]
REF
IL
Setup Slew Rate
Falling Signal
=
TF
Figure 14. IIIustration of tangent line for tIS
- 36 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
CK
CK
tIH
tIH
tIS
tIS
V
V
DDQ
(AC)min
IH
V
V
(DC)min
IH
dc to V
region
REF
nominal
slew rate
(DC)
REF
nominal
slew rate
dc to V
region
REF
V (DC)max
IL
V (AC)max
IL
V
SS
TF
TR
Hold Slew Rate
V
(DC) - V (DC)max
Hold Slew Rate
Rising Signal
REF
IL
V
(DC)min - V
(DC)
IH
REF
=
=
TR
Falling Signal
TF
Figure 15. IIIustration of nominal slew rate for tIH
- 37 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
CK
CK
tIH
tIH
tIS
tIS
V
V
DDQ
(AC)min
IH
nominal
line
V
V
(DC)min
IH
dc to V
region
REF
tangent
line
(DC)
REF
tangent
line
dc to V
region
REF
nominal
line
V (DC)max
IL
V (AC)max
IL
V
SS
TF
TR
(DC) - V (DC)max ]
tangent line [ V
REF
IL
Hold Slew Rate
Rising Signal
=
TR
tangent line [ V (DC)min - V
(DC)@
REF
IH
Hold Slew Rate
Falling Signal
=
TF
Figure 16. IIIustration of tangent line for tIH
- 38 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
10. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance
(bus turnaround) will degrade accordingly.
11. MIN ( tCL, tCH) refers to the smaller of the actual clock LOW time and the actual clock HIGH time as provided to the device (i.e. this value can be
greater than the minimum specification limits for tCL and tCH). For example, tCL and tCH are = 50% of the period, less the half period jitter ( tJIT(HP))
of the clock source, and less the half period jitter due to crosstalk ( tJIT(crosstalk)) into the clock traces.
12. tQH = tHP - tQHS, where :
tHP = minimum half clock period for any given cycle and is defined by clock HIGH or clock LOW (tCH, tCL).
tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due
to data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers.
13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output slew rate
mismatch between DQS/ DQS and associated DQ in any given cycle.
14. tDAL = WR + RU{ tRP[ns] / tCK[ns] }, where RU stands for round up.
WR refers to the tWR parameter stored in the MRS. For tRP, if the result of the division is not already an integer, round up to the next highest integer.
tCK refers to the application clock period.
Example: For DDR533 at tCK = 3.75ns with WR programmed to 4 clocks.
tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
15. The clock frequency is allowed to change during self refresh mode or precharge power-down mode.
16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resis-
tance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is 10 ns (= 2 x 5 ns) after
the clock edge that registered a first ODT HIGH if tCK = 5 ns. For DDR2-667/800, tAOND is 2 clock cycles after the clock edge that registered a first
ODT HIGH counting the actual input clock edges.
17. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are mea-
sured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is 12.5 ns (= 2.5 x 5 ns) after the clock edge that regis-
tered a first ODT LOW if tCK = 5 ns. For DDR2-667/800, if tCK(avg) = 3 ns is assumed, tAOFD is 1.5 ns (= 0.5 x 3 ns) after the second trailing clock
edge counting from the clock edge that registered a first ODT LOW and by counting the actual input clock edges.
18. tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level which
specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) . Figure 17 shows a method to calculate the point when device is no
longer driving (tHZ), or beginsdriving (tLZ) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as
long as the calculation is consistent. tLZ(DQ) refers to tLZ of the DQS and tLZ(DQS) refers to tLZ of the (U/L/R)DQS and (U/L/R)DQS each treated as
single-ended signal.
19. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving (tRPST),
or begins driving (tRPRE). Figure 17 shows a method to calculate these points when the device is no longer driving (tRPST), or begins driving
(tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consis-
tent.
VOH + x mV
VTT + 2x mV
VTT + x mV
VOH + 2x mV
tLZ
tHZ
tRPST end point
V
OL + 2x mV
OL + x mV
V
V
TT - x mV
T2
T1
T1
T2
V
TT - 2x mV
tHZ,tRPST end point = 2*T1-T2
tLZ,tRPRE begin point = 2*T1-T2
Figure 17. Method for calculating transitions and endpoints
- 39 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
20. Input waveform timing tDS with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the V (AC) level to the
IH
differential data strobe crosspoint for a rising signal, and from the input signal crossing at the V (AC) level to the differential data strobe crosspoint for
IL
a falling signal applied to the device under test. DQS, DQS signals must be monotonic between V (DC)max and V (DC)min. See Figure 18.
IL
IH
21. Input waveform timing tDH with differential data strobe enabled MR[bit10]=0, is referenced from the differential data strobe crosspoint to the input sig-
nal crossing at the V (DC) level for a falling signal and from the differential data strobe crosspoint to the input signal crossing at the V (DC) level for
IH
IL
a rising signal applied to the device under test. DQS, DQS signals must be monotonic between V (DC)max and V (DC)min. See Figure 18.
IL
IH
DQS
DQS
tDH
tDH
tDS
tDS
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
Figure 18. Differential input waveform timing - tDS and tDH
22. Input waveform timing is referenced from the input signal crossing at the V (AC) level for a rising signal and V (AC) for a falling signal applied to the
IH
IL
device under test. See Figure 19.
23. Input waveform timing is referenced from the input signal crossing at the V (DC) level for a rising signal and V (DC) for a falling signal applied to the
IL
IH
device under test. See Figure 19.
CK
CK
tIH
tIH
tIS
tIS
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
Figure 19. Differential input waveform timing - tIS and tIH
- 40 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
24. tWTR is at lease two clocks (2 x tCK or 2 x nCK) independent of operation frequency.
25. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the V (AC) level to the sin-
IH
gle-ended data strobe crossing V (DC) at the start of its transition for a rising signal, and from the input signal crossing at the V (AC) level to the
IH/L
IL
single-ended data strobe crossing V (DC) at the start of its transition for a falling signal applied to the device under test. The DQS signal must be
IH/L
monotonic between V (DC)max and V (DC)min.
IL
IH
26. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the V (DC) level to the
IH
single-ended data strobe crossing V (AC) at the end of its transition for a rising signal, and from the input signal crossing at the V (DC) level to the
IH/L
IL
single-ended data strobe crossing V (AC) at the end of its transition for a falling signal applied to the device under test. The DQS signal must be
IH/L
monotonic between V (DC)max and V (DC)min.
IL
IH
27. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire
time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of
tIS + 2 x tCK + tIH.
28. If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
29. These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to its respective
clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and
hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is pres-
ent or not.
30. These parameters are measured from a data strobe signal ((L/U/R)DQS/DQS) crossing to its respective clock signal (CK/CK) crossing. The spec val-
ues are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these
parameters should be met whether clock jitter is present or not.
31. These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal ((L/U/
R)DQS/DQS) crossing.
32. For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK(avg)}, which is in clock
cycles, assuming all input clock jitter specifications are satisfied.
For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are met. This means: For
DDR2-667 5-5-5, of which tRP = 15ns, the device will support tnRP = RU{tRP / tCK(avg)} = 5, i.e. as long as the input clock jitter specifications are
met, Precharge command at Tm and Active command at Tm+5 is valid even if (Tm+5 - Tm) is less than 15ns due to input clock jitter.
33. tDAL [nCK] = WR [nCK] + tnRP [nCK] = WR + RU {tRP [ps] / tCK(avg) [ps] }, where WR is the value programmed in the mode register set.
34. New units, ’tCK(avg)’ and ’nCK’, are introduced in DDR2-667 and DDR2-800. Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under
operation. Unit ’nCK’ represents one clock cycle of the input clock, counting the actual clock edges.
Note that in DDR2-400 and DDR2-533, ’tCK’ is used for both concepts.
ex) tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be registered at Tm+2, even if (Tm+2 - Tm) is 2 x tCK(avg)
+ tERR(2per),min.
35. Input clock jitter spec parameter. These parameters and the ones in the table below are referred to as 'input clock jitter spec parameters' and these
parameters apply to DDR2-667 and DDR2-800 only. The jitter specified is a random jitter meeting a Gaussian distribution.
DDR2-667
Min
DDR2-800
Parameter
Symbol
units
Notes
Max
125
100
250
200
175
225
250
250
350
450
125
Min
Max
100
80
Clock period jitter
tJIT(per)
tJIT(per,lck)
tJIT(cc)
-125
-100
-250
-200
-175
-225
-250
-250
-350
-450
-125
-100
-80
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
35
35
35
35
35
35
35
35
35
35
35
Clock period jitter during DLL locking period
Cycle to cycle clock period jitter
-200
-160
-150
-175
-200
-200
-300
-450
-100
200
160
150
175
200
200
300
450
100
Cycle to cycle clock period jitter during DLL locking period
Cumulative error across 2 cycles
tJIT(cc,lck)
tERR(2per)
tERR(3per)
tERR(4per)
tERR(5per)
tERR(6-10per)
tERR(11-50per)
tJIT(duty)
Cumulative error across 3 cycles
Cumulative error across 4 cycles
Cumulative error across 5 cycles
Cumulative error across n cycles, n = 6 ... 10, inclusive
Cumulative error across n cycles, n = 11 ... 50, inclusive
Duty cycle jitter
- 41 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
Definitions :
- tCK(avg)
tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window.
N
/N
tCK(avg) =
where
tCK
j
j = 1
N = 200
- tCH(avg) and tCL(avg)
tCH(avg) is defined as the average HIGH pulse width, as calculated across any consecutive 200 HIGH pulses.
N
/(N x tCK(avg))
tCH(avg) =
where
tCH
j
j = 1
N = 200
tCL(avg) is defined as the average LOW pulse width, as calculated across any consecutive 200 LOW pulses.
N
/(N x tCK(avg))
tCL(avg) =
tCL
j
j = 1
N = 200
where
- tJIT(duty)
tJIT(duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from tCH(avg). tCL jitter is the
largest deviation of any single tCL from tCL(avg).
tJIT(duty) = Min/max of {tJIT(CH), tJIT(CL)}
where,
tJIT(CH) = {tCHi- tCH(avg) where i=1 to 200}
tJIT(CL) = {tCLi- tCL(avg) where i=1 to 200}
- tJIT(per), tJIT(per,lck)
tJIT(per) is defined as the largest deviation of any single tCK from tCK(avg).
tJIT(per) = Min/max of {tCKi- tCK(avg) where i=1 to 200}
tJIT(per) defines the single period jitter when the DLL is already locked.
tJIT(per,lck) uses the same definition for single period jitter, during the DLL locking period only.
tJIT(per) and tJIT(per,lck) are not guaranteed through final production testing.
- tJIT(cc), tJIT(cc,lck)
tJIT(cc) is defined as the difference in clock period between two consecutive clock cycles : tJIT(cc) = Max of |tCK - tCKi|
i+1
tJIT(cc) defines the cycle to cycle jitter when the DLL is already locked.
tJIT(cc,lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only.
tJIT(cc) and tJIT(cc,lck) are not guaranteed through final production testing.
- tERR(2per), tERR (3per), tERR (4per), tERR (5per), tERR (6-10per) and tERR (11-50per)
tERR is defined as the cumulative error across multiple consecutive cycles from tCK(avg).
i + n - 1
- n x tCK(avg)
tERR(nper) =
tCK
j
j = 1
n = 2
for tERR(2per)
for tERR(3per)
for tERR(4per)
for tERR(5per)
for tERR(6-10per)
n = 3
n = 4
n = 5
where
6 n 10
11 n 50 for tERR(11-50per)
- 42 -
Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
36. These parameters are specified per their average values, however it is understood that the following relationship between the average timing and the
absolute instantaneous timing holds at all times. (Min and max of SPEC values are to be used for calculations in the table below.)
Parameter
Symbol
Min
Max
Units
Absolute clock Period
tCK(abs)
tCK(avg)min + tJIT(per)min
tCK(avg)max + tJIT(per)max
ps
tCH(avg)min x tCK(avg)min +
tJIT(duty)min
tCH(avg)max x tCK(avg)max +
tJIT(duty)max
Absolute clock HIGH pulse width
Absolute clock LOW pulse width
tCH(abs)
tCL(abs)
ps
ps
tCL(avg)min x tCK(avg)min +
tJIT(duty)min
tCL(avg)max x tCK(avg)max +
tJIT(duty)max
Example: For DDR2-667, tCH(abs),min = ( 0.48 x 3000 ps ) - 125 ps = 1315 ps
37. tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter. It is used
in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the following equation;
tHP = Min ( tCH(abs), tCL(abs) ),
where,
tCH(abs) is the minimum of the actual instantaneous clock HIGH time;
tCL(abs) is the minimum of the actual instantaneous clock LOW time;
38. tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is transferred to the output; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are independent of
each other, due to data pin skew, output pattern effects, and p-channel to n-channel variation of the output drivers
39. tQH = tHP - tQHS, where:
tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the max column.
{The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples:
1) If the system provides tHP of 1315 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975 ps minimum.
2) If the system provides tHP of 1420 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
40. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output derat-
ings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per)min = - 272 ps and tERR(6-10per)max = + 293 ps, then tDQSCK-
min(derated) = tDQSCKmin - tERR(6-10per)max = - 400 ps - 293 ps = - 693 ps and tDQSCKmax(derated) = tDQSCKmax - tERR(6-10per)min = 400
ps + 272 ps = + 672 ps. Similarly, tLZ(DQ) for DDR2-667 derates to tLZ(DQ)min(derated) = - 900 ps - 293 ps = - 1193 ps and tLZ(DQ)max(derated) =
450 ps + 272 ps = + 722 ps.
41. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per) of the input clock. (output deratings are
relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per)min = - 72 ps and tJIT(per)max = + 93 ps, then tRPREmin(derated) =
tRPREmin + tJIT(per)min = 0.9 x tCK(avg) - 72 ps = + 2178 ps and tRPREmax(derated) = tRPREmax + tJIT(per)max = 1.1 x tCK(avg) + 93 ps = +
2843 ps.
42. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(duty) of the input clock. (output deratings are
relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty),min = - 72 ps and tJIT(duty)max = + 93 ps, then tRPSTmin(derated) =
tRPSTmin + tJIT(duty)min = 0.4 x tCK(avg) - 72 ps = + 928 ps and tRPSTmax(derated) = tRPSTmax + tJIT(duty)max = 0.6 x tCK(avg) + 93 ps = +
1592 ps.
43. When the device is operated with input clock jitter, this parameter needs to be derated by { - tJIT(duty)max - tERR(6-10per)max } and { - tJIT(duty)min
- tERR(6-10per)min } of the actual input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per)min = - 272 ps, tERR(6- 10per)max = + 293 ps, tJIT(duty)min = - 106
ps and tJIT(duty)max = + 94 ps, then tAOFmin(derated) = tAOFmin + { - tJIT(duty)max - tERR(6-10per)max } = - 450 ps + { - 94 ps - 293 ps} = - 837
ps and tAOFmax(derated) = tAOFmax + { - tJIT(duty)min - tERR(6-10per)min } = 1050 ps + { 106 ps + 272 ps } = + 1428 ps.
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Rev. 1.0
K4T1G084QG
K4T1G164QG
datasheet
Industrial DDR2 SDRAM
44. For tAOFD of DDR2-400/533, the 1/2 clock of tCK in the 2.5 x tCK assumes a tCH, input clock HIGH pulse width of 0.5 relative to tCK. tAOF,min and
tAOF,max should each be derated by the same amount as the actual amount of tCH offset present at the DRAM input with respect to 0.5.
For example, if an input clock has a worst case tCH of 0.45, the tAOFmin should be derated by subtracting 0.05 x tCK from it, whereas if an input clock
has a worst case tCH of 0.55, the tAOFmax should be derated by adding 0.05 x tCK to it. Therefore, we have;
tAOFmin(derated) = tAC,min - [0.5 - Min(0.5, tCHmin)] x tCK
tAOFmax(derated) = tAC,max + 0.6 + [Max(0.5, tCHmax) - 0.5] x tCK
or
tAOFmin(derated) = Min(tACmin, tACmin - [0.5 - tCHmin] x tCK)
tAOFmax(derated) = 0.6 + Max(tACmax, tACmax + [tCHmax - 0.5] x tCK)
where tCHmin and tCHmax are the minimum and maximum of tCH actually measured at the DRAM input balls.
45. For tAOFD of DDR2-667/800, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH(avg), average input clock HIGH pulse width of 0.5 relative to
tCK(avg). tAOFmin and tAOFmax should each be derated by the same amount as the actual amount of tCH(avg) offset present at the DRAM input
with respect to 0.5.
For example, if an input clock has a worst case tCH(avg) of 0.48, the tAOFmin should be derated by subtracting 0.02 x tCK(avg) from it, whereas if an
input clock has a worst case tCH(avg) of 0.52, the tAOFmax should be derated by adding 0.02 x tCK(avg) to it. Therefore, we have;
tAOFmin(derated) = tACmin - [0.5 - Min(0.5, tCH(avg)min)] x tCK(avg)
tAOFmax(derated) = tACmax + 0.6 + [Max(0.5, tCH(avg)max) - 0.5] x tCK(avg)
tAOFmin(derated) = Min(tACmin, tACmin - [0.5 - tCH(avg)min] x tCK(avg))
tAOFmax(derated) = 0.6 + Max(tACmax, tACmax + [tCH(avg)max - 0.5] x tCK(avg))
where tCH(avg),min and tCH(avg),max are the minimum and maximum of tCH(avg) actually measured at the DRAM input balls.
NOTE :
That these deratings are in addition to the tAOF derating per input clock jitter, i.e. tJIT(duty) and tERR(6-10per). However tAC values used in the equations shown above
are from the timing parameter table and are not derated. Thus the final derated values for tAOF are;
tAOFmin(derated_final) = tAOFmin(derated) + { - tJIT(duty)max - tERR(6-10per)max }
tAOFmax(derated_final) = tAOFmax(derated) + { - tJIT(duty)min - tERR(6-10per)min }
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