K4T28163QO_技术文档

Apr. 2010

Consumer Memory

Product Guide

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SPECIFICATIONS WITHOUT NOTICE.

Products and specifications discussed herein are for reference purposes only. All information discussed

herein is provided on an "AS IS" basis, without warranties of any kind.

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All brand names, trademarks and registered trademarks belong to their respective owners.

- 1 -

Apr. 2010

Product Guide

Consumer Memory

1. CONSUMER MEMORY ORDERING INFORMATION

1

2

3

4

5

6

7

8

9

10

11

K 4 X X X X X X X X - X X X X

Speed

SAMSUNG Memory

DRAM

Temperature & Power

Package Type

Revision

Product

Density & Refresh

Organization

Interface (VDD, VDDQ)

Bank

1. SAMSUNG Memory : K

2. DRAM : 4

7. Interface ( VDD, VDDQ)

2

8

: LVTTL (3.3V, 3.3V)

: SSTL_2 (2.5V, 2.5V)

: SSTL_18 (1.8V, 1.8V)

: SSTL_15 (1.5V, 1.5V)

: POD_18 (1.8V, 1.8V)

Q

6

3. Product

S

H

T

B

D

J

: SDRAM

K

: DDR SDRAM

: DDR2 SDRAM

: DDR3 SDRAM

: GDDR

8. Revision

M

A

B

C

D

E

F

: 1st Gen.

H

I

: 9th Gen.

: GDDR3

: 2nd Gen.

: 3rd Gen.

: 4th Gen.

: 5th Gen.

: 6th Gen.

: 7th Gen.

: 8th Gen.

: 10th Gen.

: 11th Gen.

: 12th Gen.

: 13th Gen.

: 14th Gen.

: 15th Gen.

: 19th Gen.

J

K

L

4. Density & Refresh

64 : 64Mb, 4K/64ms

28 : 128Mb, 4K/64ms

56 : 256Mb, 8K/64ms

51 : 512Mb, 8K/64ms

1G : 1Gb, 8K/64ms

2G : 2Gb, 8K/64ms

10 : 1Gb, 8K/32ms

N

O

S

G

9. Package Type

TSOPII (Lead-free)

100TQFP(Lead-free) only for 128Mb GDDR

U

:

Z

V

L

: FBGA (Lead-free)

5. Organization

: 144FBGA (Lead-free) only for 128Mb GDDR

: TSOPII (Lead-free & Halogen-free)

: FBGA (Lead-free & Halogen-free)

04 : x4

H

F

08 : x8

FBGA(Lead-free & Halogen-free) for 64Mb DDR, 128Mb GDDR

FBGA DDP (Lead-free & Halogen-free)

:

16 : x16

32 : x32

31 : x32 (2CS)

M

B

FBGA FLIP-CHIP (Lead-free & Halogen-free)

10. Temperature & Power

C

L

: Commercial Temp. & Normal Power

6. Bank

: Commercial Temp. & Low Power

: Industrial Temp. & Normal Power

: Industrial Temp. & Low Power

2

3

4

: 2 Banks

: 4 Banks

: 8 Banks

I

P

D

Q

: Industrial Temp. & Super Low Power

: Commercial Temp. DDR3+ (Gapless, BL4)

- 2 -

Apr. 2010

Product Guide

Consumer Memory

1

2

3

4

5

6

7

8

9

10

11

K 4 X X X X X X X X - X X X X

Speed

SAMSUNG Memory

DRAM

Temperature & Power

Package Type

Revision

Product

Density & Refresh

Organization

Interface (VDD, VDDQ)

Bank

11. Speed

75 : 7.5ns, PC133 (133MHz CL=3)

60 : 6.0ns (166MHz CL=3)

50 : 5.0ns (200MHz CL=3)

40 : 4.0ns (250MHz CL=3)

B0 : DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)

B3 : DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)

CC : DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)

E6 : DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5)

E7 : DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)

F7 : DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6)

F8 : DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)

H9 : DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)

K0 : DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)

7A : GDDR3-2.6Gbps (0.77ns)

08 : GDDR3-2.4Gbps (0.8ns)

1A : GDDR3-2.0Gbps (1.0ns)

12 : GDDR3-1.6Gbps (1.25ns)

14 : GDDR3-1.4Gbps (1.4ns)

- 3 -

Apr. 2010

Product Guide

Consumer Memory

2. Commercial Temperature Consumer DRAM Component Product Guide

2.1 SDRAM

Package & Power,

Density

Bank

Part Number

Org.

Interface

Refresh

Power (V)

Package

Avail.

Temp. (-C/-L) & Speed

K4S640832N

K4S641632N

K4S280832K

K4S281632K

K4S280832O

K4S281632O

K4S560432J

K4S560832J

K4S561632J

K4S560432N

K4S560832N

K4S561632N

LC(L)75

8M x 8

4M x 16

16M x 8

8M x 16

16M x 8

8M x 16

64M x 4

32M x 8

16M x 16

64M x 4

32M x 8

16M x 16

64Mb N-die

4Banks

LVTTL

4K/64ms

3.3±0.3V

54pin TSOP(II)

Now

LC(L)50/C(L)60/C(L)75

*1

U

C(L)75

*1

128Mb K-die 4Banks

128Mb O-die 4Banks

LVTTL

4K/64ms

3.3±0.3V

Now

54pin TSOP(II)

UC(L)50/C(L)60/C(L)75

LC(L)75

3Q’10

54pin TSOP(II)

LC(L)50/C(L)60/C(L)75

*1

U

C(L)75

*1

256Mb J-die

4Banks

LVTTL

8K/64ms

3.3±0.3V

Now

UC(L)75

54pin TSOP(II)

UC(L)60/C(L)75

LC(L)75

256Mb N-die 4Banks

LC(L)75

54pin TSOP(II)

LC(L)60/C(L)75

NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)

2.2 DDR SDRAM

Package & Power,

Density

Bank

Part Number

Org.

Interface

Refresh

Power (V)

Package

Avail.

Temp. (-C/-L) & Speed

LC(L)CC

66pinTSOPII

60ball FBGA

66pinTSOPII

64Mb N-die

4Banks

K4H641638N

4M x 16

SSTL_2

4K/64m

2.5±0.2V

Now

FC(L)CC

64Mb Q-die

128Mb L-die

4Banks

K4H641638Q

K4H281638L

LC(L)CC

4M x 16

8M x 16

SSTL_2

4K/64m

2Q’10

Now

*1

LC(L)/C(L)CC

2.5±0.2V

*1

128Mb O-die 4Banks

K4H281638O

K4H560438J

K4H560838J

K4H561638J

K4H560438N

K4H560838N

K4H561638N

LC(L)CC/C(L)B3

LC(L)B3/C(L)B0

LC(L)CC/C(L)B3

LC(L)B3/C(L)B0

LC(L)CC/C(L)B3

LC(L)B3/C(L)B0

HC(L)CC/C(L)B3

LC(L)CC/C(L)B3

HC(L)CC/C(L)B3

LC(L)CC/C(L)B3

HC(L)CC/C(L)B3

LC(L)B3/C(L)B0

HC(L)CC/C(L)B3

LC(L)CC/C(L)B3

HC(L)CC/C(L)B3

LC(L)CC/C(L)B3

HC(L)CC/C(L)B3

8M x 16

64M x 4

32M x 8

16M x 16

64M x 4

32M x 8

16M x 16

66pinTSOPII

2Q’10

2.5±0.2V

*2

256Mb J-die

4Banks

SSTL_2

8K/64m

66pinTSOPII

Now

2.5±0.2V

*2

256Mb N-die 4Banks

512Mb F-die 4Banks

66pinTSOPII

2.5±0.2V

66pinTSOPII

60ball FBGA

66pinTSOPII

60ball FBGA

66pinTSOPII

60ball FBGA

66pinTSOPII

60ball FBGA

66pinTSOPII

60ball FBGA

66pinTSOPII

60ball FBGA

K4H510438F

K4H510838F

K4H511638F

K4H510438G

K4H510838G

K4H511638G

128M x 4

64M x 8

*2

SSTL_2

8K/64m

Now

2.5±0.2V

32M x 16

128M x 4

64M x 8

*2

512Mb G-die 4Banks

SSTL_2

8K/64m

Now

2.5±0.2V

32M x 16

NOTE : 1. V /V

SPEC for 128Mb DDR L-die

DD DDQ

DDR500

DDR400

V

/V

2.5V ± 0.125V 2.5V ± 0.2V

DD DDQ

2. V /V

SPEC for 256/512Mb DDR

DD DDQ

DDR400

DDR333/266

V

/V

2.6V ± 0.1V

2.5V ± 0.2V

DD DDQ

- 4 -

Apr. 2010

Product Guide

Consumer Memory

2.3 DDR2 SDRAM

Package & Power,

Density

Banks

Part Number

Org.

Interface

Refresh

Power (V)

Package

Avail.

Temp. (-C/-L) & Speed

128Mb O-die 4Banks

256Mb I-die 4Banks

K4T28163QO HCF8/E7/F7/E6

8M x 16

16M x 16

64M x 8

SSTL_18

4K/64m

8K/64m

1.8V±0.1V

84ball FBGA

60ball FBGA

84ball FBGA

Now

*1

K4T56163QI

K4T56163QN

Z

C(L)E7/F7/E6/D5/CC

256Mb N-die 4Banks

512Mb G-die 4Banks

HCF8/E7/F7/E6

K4T51083QG HC(L)F8/E7/F7/E6

SSTL_18

8K/64m

1.8V±0.1V

Now

K4T51163QG

K4T51043QI

K4T51083QI

K4T51163QI

HC(L)F8/E7/F7/E6

HC(L)E7/F7/E6

32M x 16

128M x 4

64M x 8

60ball FBGA

Now

512Mb I-die

4Banks

HC(L)E7/F7/E6

SSTL_18

8K/64m

1.8V±0.1V

HC(L)F8/E7/F7/E6

32M x 16

128M x 8

64M x 16

128M x 8

64M x 16

84ball FBGA

60ball FBGA

84ball FBGA

60ball FBGA

84ball FBGA

K4T1G084QE HC(L)F8/E7/F7/E6

K4T1G164QE HC(L)F8/E7/F7/E6

K4T1G084QF BC(L)F8/E7/F7/E6

K4T1G164QF BC(L)F8/E7/F7/E6

1Gb E-die

1Gb F-die

8Banks

SSTL_18

8K/64m

1.8V±0.1V

Now

NOTE : 1. 128Mb I-die DDR2 84ball FBGA supports Halogen-free package

2.4 DDR3 SDRAM

Package & Power,

Density

1Gb E-die

2Gb B-die

Banks

8Banks

Part Number

Org.

Interface

SSTL_15

Refresh

Power (V)

PKG

Avail.

Now

Temp. (-C/-L) & Speed

HC(L)F7/F8/H9/K0

HC(L)F8/H9/K0

K4B1G0846E

K4B1G1646E

K4B2G0846B

K4B2G1646B

K4B2G0846C

K4B2G1646C

128M x 8

64M x 16

256M x 8

128M x 16

256M x 8

128M x 16

78ball FBGA

96ball FBGA

78ball FBGA

96ball FBGA

78ball FBGA

96ball FBGA

8K/64m 1.5V±0.075V

Now

2Gb C-die

8Banks

SSTL_15

Now

HC(L)F8/H9/K0

2.5 DDR3+ SDRAM

Package & Power,

Density

Banks

Part Number

Org.

Interface

Refresh

Power (V)

PKG

Avail.

Temp. (-C/-L) & Speed

1Gb E-die

2Gb C-die

8Banks

K4B1G1646E

K4B2G1646C

HQH9

64M x 16

SSTL_15

8K/64m 1.5V±0.075V

96ball FBGA

Now

128M x 16

NOTE : For more details about product specifications or technical files, please contact us "semiconductor@samsung.com"

- 5 -

Apr. 2010

Product Guide

Consumer Memory

2.6 GDDR SDRAM

Package & Power,

Density

Banks

Part Number

Org.

Interface

Refresh

Power (V)

PKG

Avail.

Temp. (-C/-L) & Speed

Lead-free & Halogen-

free

FC40/50

144ball FBGA

Lead-free

144ball FBGA

3Q. ’10

EOL

VC40/50

128Mb K-die 4Banks

K4D263238K

4M x 32

SSTL_2

4K/32m

2.5V±5%

Lead-free & Halogen-

free

*1

U

C40/50

*1

100pin TQFP

NOTE : 1. 128Mb K-die GDDR TQFP supports Lead-free & Halogen-free package with Lead-free package code(-U)

2.7 GDDR3 SDRAM

Package & Power,

Density

Banks

Part Number

Org.

Interface

Refresh

Power (V)

PKG

Avail.

Temp. (-C/-L) & Speed

1Gb E-die

8Banks

K4J10324KE

HC7A/08/1A/12/14

32M x 32

SSTL_2

8K/32m

1.8V±0.1V

136ball FBGA

Now

- 6 -

Apr. 2010

Product Guide

Consumer Memory

3. Industrial Temperature Consumer DRAM Component Product Guide

3.1 SDRAM

Package & Power,

Temp. & Speed

Density

Bank

Part Number

Org.

Interface

Refresh

Power (V)

Package

Avail.

64Mb N-die

4Banks KS641632N

LI(P)60/I(P)75

4M x 16

8M x 16

16M x 16

LVTTL

4K/64ms

8K/64ms

54pin TSOP(II)

Now

3.3±0.3V

*1

128Mb K-die 4Banks K4S281632K

128Mb O-die 4Banks K4S281632O

256Mb J-die 4Banks K4S561632J

256Mb N-die 4Banks K4S561632N

U

I(P)60/I(P)75

54pin TSOP(II)

LI(P)60/I(P)75

3Q ’10

Now

54pin TSOP(II)

*1

U

I(P)60/I(P)75

54pin TSOP(II)

LI(P)60/I(P)75

2Q ’10

54pin TSOP(II)

NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)

3.2 DDR SDRAM

Package & Power,

Temp. & Speed

Density

Bank

Part Number

Org.

Interface

Refresh

Power (V)

Package

Avail.

K4H510838F

LI(P)B3

64M x 8

66pinTSOPII

60ball FBGA

66pinTSOPII

60ball FBGA

*1

512Mb F-die 4Banks

LI(P)B3

SSTL_2

8K/64m

Now

2.5±0.2V

K4H511638F

32M x 16

HI(P)B3

LI(P)CC/B3

HI(P)CC/B3

*1

512Mb G-die 4Banks K4H511638G

SSTL_2

8K/64m

Now

2.5±0.2V

NOTE : 1. V /V

SPEC for 256/512Mb DDR

DD DDQ

DDR400

DDR333/266

V

/V

2.6V ± 0.1V

2.5V ± 0.2V

DD DDQ

3.3 DDR2 SDRAM

Package & Power,

Temp. & Speed

Density

Bank

Part Number

Org.

Interface

Refresh

Power (V)

Package

Avail.

HI(P)F7/I(P)E6/I(P)D5/

I(P)CC

K4T51163QG

512Mb G-die 4Banks

32M x 16

SSTL_18

8K/64m

1.8V±0.1V

84ball FBGA

Now

K4T51163QG

K4T51163QI

K4T1G084QE

K4T1G164QE

K4T1G084QF

K4T1G164QF

HDE6

HI(P)E7/I(P)F7/I(P)E6

HDE7/E6

512Mb I-die

1Gb E-die

1Gb F-die

4Banks

8Banks

32M x 16

SSTL_18

8K/64m

1.8V±0.1V

1.8V ± 0.1V

84ball FBGA

Now

HI(P)F7/I(P)E6

BI(P)F7/I(P)E6

128M x 8

64M x 16

128M x 8

64M x 16

60ball FBGA

84ball FBGA

60ball FBGA

84ball FBGA

Now

2Q ’10

3.4 DDR3 SDRAM

Package & Power,

Temp. & Speed

Density

Bank

Part Number

Org.

Interface

Refresh

Power (V)

Package

Avail.

1Gb E-die

2Gb B-die

2Gb C-die

8Banks K4B1G1646E

8Banks K4B2G1646B

8Banks K4B2G1646C

HI(P)H9

64M x 16

128M x 16

SSTL_15

8K/64m 1.5V±0.075V

96ball FBGA

Now

2Q ’10

- 7 -

Apr. 2010

Product Guide

Consumer Memory

4. Package Dimension

54Pin TSOP(II) (for SDRAM)

#54

Units : Millimeters

#28

#1

#27

(1.50)

+0.075

- 0.035

0.125

22.22 ± 0.10

(10°)

0.10 MAX

[

(10°)

+0.10

- 0.05

0.80TYP

[0.80 ± 0.08]

0.075 MAX

[

0.35

(0.71)

0.25TYP

NOTE

1. ( ) IS REFERENCE

2. [ ] IS ASS’Y OUT QUALITY

(0° ∼ 8°)

66Pin TSOP(II) (for DDR)

Units : Millimeters

#66

#34

#1

#33

(1.50)

+0.075

- 0.035

0.125

22.22 ± 0.10

(10°)

0.10 MAX

[

(10°)

0.65TYP

[0.65 ± 0.08]

0.075 MAX

[

(0.71)

Detail A

Detail B

0.25TYP

NOTE

1. ( ) IS REFERENCE

2. [ ] IS ASS’Y OUT QUALITY

Detail A

Detail B

(0° ∼ 8°)

± 0.08

0.30

0.25

- 8 -

Apr. 2010

Product Guide

Consumer Memory

60Ball FBGA (For DDR 64Mb N-die)

Units : Millimeters

8.00 ± 0.10

A

#A1 MARK

0.80 x 8 = 6.40

0.80

8.0 0 ± 0.10

1.60

#A1

B

9

8

7

6

5

4

3

2

1

(Datum A)

(Datum B)

A

B

C

D

E

F

G

H

J

K

L

M

0.32 ± 0.05

1.10 ± 0.10

60 - ∅ 0.45 SOLDER BALL

(Post Reflow 0.50 ± 0.05)

M

A B

TOP VIEW

∅0.20

BOTTOM VIEW

60Ball FBGA (For DDR 512Mb F-die, 512Mb G-die)

Units : Millimeters

9.00 ± 0.10

x8 =

A

0.80

6.40

3.20

0.80

x4 =

#A1 MARK(option)

9.00 ± 0.10

WINDOW MOLD AREA

0.80 x2= 1.60

0.80 x2 = 1.60

B

9

8

7

6

5

4

3

2

1

0.80

A

B

C

D

E

F

#A1

(Datum B)

G

H

J

K

L

M

(0.90)

60-∅0.45 ± 0.05

0.20 M

(1.80)

A

B

1.20 MAX

(Datum A)

4-CORNER MARK(option)

TOP VIEW

BOTTOM VIEW

- 9 -

Apr. 2010

Product Guide

Consumer Memory

60Ball FBGA (For DDR2 x8)

Units : Millimeters

# A1 INDEX MARK

MOLDING AREA

(Datum A)

7.50 ± 0.10

A

0.80 x 8 = 6.40

#A1

B

0.80

1.60

9

8

7

6

5

4

3

2

1

A

(Datum B)

B

C

D

E

F

G

H

J

K

L

(0.95)

(1.90)

0.35±0.05

1.10±^0.10

60-∅0.45 Solder ball

(Post reflow 0.50 ± 0.05)

0.2 M

A B

TOP VIEW

BOTTOM VIEW

84Ball FBGA (For DDR2 128Mb O-die/256Mb N-die/512Mb G-die, I-die/1Gb E-die)

Units : Millimeters

7.50 ± 0.10

A

0.80 x 8 = 6.40

7.50 ± 0.10

# A1 INDEX MARK

B

3.20

1.60

MOLDING AREA

#A1

0.80

7

9

8

6

5

4

3

2

1

(Datum A)

A

B

C

(Datum B)

D

E

F

G

H

J

K

L

M

N

P

R

0.35±0.05

1.10±^0.10

(0.95)

(1.90)

84-∅0.45 Solder ball

(Post reflow 0.50 ± 0.05)

0.2 M

A B

TOP VIEW

BOTTOM VIEW

- 10 -

Apr. 2010

Product Guide

Consumer Memory

60Ball FBGA (for DDR2 1Gb F-die x8)

Units : Millimeters

7.50 ± 0.10

A

0.80 x 8 = 6. 40

# A1 INDEX MARK

3.20

7.50 ± 0.10

(Datum A)

(Datum B)

0.80

7

1.60

4

B

#A1

9

8

6

5

3

2

1

A

B

C

D

E

F

G

H

J

K

L

0.37±0.05

1.10±0.10

(0.30)

MOLDING AREA

60-∅0.48 Solder ball

(Post reflow 0.50 ± 0.05)

(0.60)

0.2 M

A B

TOP VIEW

BOTTOM VIEW

84Ball FBGA (for DDR2 1Gb F-die x16)

Units : Millimeters

7.50 ± 0.10

A

0.80 x 8 = 6. 40

3.20

# A1 INDEX MARK

B

7.50 ± 0.10

0.80

1.60

4

#A1

9

8

7

6

5

3

2

1

(Datum A)

(Datum B)

A

B

C

D

E

F

G

H

J

K

L

M

N

P

R

0.37±0.05

1.10±0.10

(0.30)

MOLDING AREA

84-∅0.48 Solder ball

(Post reflow 0.50 ± 0.05)

(0.60)

0.2 M

A B

TOP VIEW

BOTTOM VIEW

- 11 -

Apr. 2010

Product Guide

Consumer Memory

84Ball FBGA (For DDR2 256Mb I-die)

Units : Millimeters

9.00 ± 0.10

A

0.80 x 8 = 6.40

9.00 ± 0.10

3.20

3

# A1 INDEX MARK

B

0.80

1.60

#A1

9

8

7

6

5

4

2

1

(Datum A)

(Datum B)

A

B

C

D

E

F

G

H

J

K

L

M

N

P

R

(0.95)

0.35 ± 0.05

1.10 ± 0.10

84-∅0.45 Solder ball

(Post reflow 0.50 ± 0.05)

MOLDING AREA

(1.90)

0.2 M

A

B

TOP VIEW

BOTTOM VIEW

78Ball FBGA (for DDR3 1Gb x8 E-die / DDR3 2Gb x8 C-die)

Units : Millimeters

7.50 ± 0.10

A

#A1 INDEX MARK

0.80

(Datum A)

(Datum B)

1.60

6

3.20

7.50 ± 0.10

#A1

B

9

8

7

5

4

3

2 1

A

B

C

D

E

F

G

H

J

K

L

M

N

0.35 ± 0.05

1.10 ± 0.10

(0.95)

78 - ∅0.45 Solder ball

(Post Reflow ∅0.50 ± 0.05)

MOLDING AREA

(1.90)

0.2

M A B

TOP VIEW

BOTTOM VIEW

- 12 -

Apr. 2010

Product Guide

Consumer Memory

96Ball FBGA (for DDR3 1Gb x16 E-die / DDR3+ 1Gb x16 E-die / DDR3 2Gb x16 C-die)

Units : Millimeters

7.50 ± 0.10

A

#A1 INDEX MARK

0.80

1.60

6

3.20

3

7.50 ± 0.10

#A1

B

9

8

7

5

4

2 1

A

B

C

D

E

F

(Datum A)

(Datum B)

G

H

J

K

L

M

N

P

R

T

0.35 ± 0.05

1.10 ± 0.10

(0.95)

96 - ∅0.45 Solder ball

(Post Reflow ∅0.50 ± 0.05)

MOLDING AREA

(1.90)

0.2

M A B

TOP VIEW

BOTTOM VIEW

78Ball FBGA (for DDR3 2Gb x8 B-die)

Units : Millimeters

9.00

± 0.10

A

0.80 x 8 = 6.40

#A1 INDEX MARK

B

0.80

8

(Datum A)

(Datum B)

1.60

6

3.20

9.00

± 0.10

#A1

9

7

5 4 3 2 1

A

B

C

D

E

F

G

H

J

K

L

M

N

0.35

± 0.05

(0.95)

78 -

(Post Reflow

0.2

∅

0.45 Solder ball

MOLDING AREA

∅

0.50 0.05)

±

1.10

± 0.10

(1.90)

M

A B

TOP VIEW

BOTTOM VIEW

- 13 -

Apr. 2010

Product Guide

Consumer Memory

96Ball FBGA (for DDR3 2Gb x16 B-die)

Units : Millimeters

9.00 ± 0.10

0.80 x 8 = 6.40

A

#A1 INDEX MARK

B

0.80

8

1.60

6

3.20

9.00 ± 0.10

#A1

9

7

5 4 3 2 1

A

B

C

D

E

F

(Datum A)

(Datum B)

G

H

J

K

L

M

N

P

R

T

0.35 ± 0.05

1.10 ± 0.10

(0.95)

96 - ∅0.45 Solder ball

(Post Reflow ∅0.50 ± 0.05)

MOLDING AREA

(1.90)

0.2

M A B

TOP VIEW

BOTTOM VIEW

136Ball FBGA (for GDDR3 1Gb E-die)

Units : Millimeters

10.00 ± 0.10

A

0.80 x 11 = 8.80

# A1 INDEX MARK

4.40

2.00

#A1

0.80

12 11 10

10.00 ± 0.10

B

9

8

7

6

5

4

3

2

1

A

B

C

D

E

F

(Datum A)

(Datum B)

G

H

J

K

L

M

N

P

R

T

V

0.35 ± 0.05

1.10 ± 0.10

0.95

MOLDING AREA

1.90

136-

(Post reflow 0.50

∅0.45 Solder ball

±

0.05)

0.2 M

A

B

TOP VIEW

BOTTOM VIEW

- 14 -

Apr. 2010

Product Guide

Consumer Memory

For further information,

semiconductor@samsung.com

- 15 -


型号：	K4T28163QO
厂家：	SAMSUNG
描述：	Consumer Memory 消费者的记忆
文件：	总15页 (文件大小：538K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

K4T28163QO [SAMSUNG]

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