K5P2880YCM [SAMSUNG]

Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM; 多芯片封装内存128M位16Mx8 NAND快闪记忆体/ 8M位1Mx8 / 512Kx16全CMOS SRAM
K5P2880YCM
型号: K5P2880YCM
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
多芯片封装内存128M位16Mx8 NAND快闪记忆体/ 8M位1Mx8 / 512Kx16全CMOS SRAM

静态存储器
文件: 总29页 (文件大小:551K)
下载:  下载PDF数据表文档文件

K5P2881BCM-F0700

Memory Circuit, 16MX8, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, FBGA-69

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0 SAMSUNG

K5P5781FCM-F055

Memory Circuit, Flash+SRAM, CMOS, PBGA69

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0 SAMSUNG

K5P5781FCM-F0550

Memory Circuit, 16MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, FBGA-69

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0 SAMSUNG

K5P6480YCM-T085

Memory Circuit, 8MX8, CMOS, PBGA69, 8 X 13 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG

K5Q6432YCM-T010

Memory Circuit, Flash+PSRAM, 8MX8, CMOS, PBGA69, 8 X 13 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG

K5-R2

Adjustable Type Coils

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70 MITSUMI

K5-S

Adjustable Type Coils

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37 MITSUMI

K5-S2

Adjustable Type Coils

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24 MITSUMI

K5S3216Y0A-T370

Memory Circuit, PSRAM+SRAM, 2MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG

K5S3216Y0A-T385

Memory Circuit, PSRAM+SRAM, 2MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, TBGA-69

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0 SAMSUNG

K5S3216Y0M-T010

Memory Circuit, 2MX16, CMOS, PBGA69, 9 X 12.50 MM, TBGA-69

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0 SAMSUNG

K5S3216Y0M-T070

Memory Circuit, 2MX16, CMOS, PBGA69, 9 X 12.50 MM, TBGA-69

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0 SAMSUNG

K5SMD.SA

General Purpose Tweezers

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10 ETC

K5T6432YBM-T310

Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA81, 10.80 X 10.40 MM, 0.80 MM PITCH, TBGA-81

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0 SAMSUNG

K5T6432YT

Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

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32 SAMSUNG