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K6E0808V1C-JC17 [SAMSUNG]

Standard SRAM, 32KX8, 17ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28;
K6E0808V1C-JC17
型号： K6E0808V1C-JC17
厂家： SAMSUNG    SAMSUNG
描述：

Standard SRAM, 32KX8, 17ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

静态存储器 光电二极管
文件： 总9页 (文件大小：180K)
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PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
Document Title  
32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Preliminary  
Final  
Initial release with Preliminary.  
Jun. 1st, 1994  
Oct. 4th, 1994  
Release to final Data Sheet.  
1. Delete Preliminary  
Rev. 2.0  
Rev. 3.0  
2.1. Add 28-TSOP1 Package.  
Feb. 22th, 1996  
Feb. 25th, 1998  
Final  
Final  
3.1. Delete DIP Package.  
3.2. Delete 20ns part  
3.3. Add Capacitive load of the test environment in A.C test load  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 3.0  
February 1998  
- 1 -  
PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)  
FEATURES  
GENERAL DESCRIPTION  
• Fast Access Time 15, 17ns(Max.)  
• Low Power Dissipation  
The K6E0808V1C is a 262,144-bit high-speed Static Random  
Access Memory organized as 32,768 words by 8 bits. The  
K6E0808V1C uses 8 common input and output lines and has  
an output enable pin which operates faster than address  
access time at read cycle. The device is fabricated using SAM-  
SUNG¢s advanced CMOS process and designed for high-  
speed circuit technology. It is particularly well suited for use in  
Standby (TTL)  
: 30mA(Max.)  
(CMOS) : 0.1mA(Max.)  
Operating K6E0808V1C-15 : 90mA(Max.)  
K6E0808V1C-17 : 80mA(Max.)  
• Single 3.3±0.3V Power Supply  
• TTL Compatible Inputs and Outputs  
• Fully Static Operation  
high-density  
high-speed  
system  
applications.  
The  
K6E0808V1C is packaged in a 300mil 28-pin plastic SOJ or  
TSOP1 forward.  
- No Clock or Refresh required  
• Three State Outputs  
• 2V Minimum Data Retention; L-ver. only  
• Standard Pin Configuration  
PIN CONFIGURATION(Top View)  
K6E0808V1C-J : 28-SOJ-300  
K6E0808V1C-T : 28-TSOP1-0813, 4F  
OE  
A11  
A9  
1
2
3
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A10  
CS  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
Vss  
I/O3  
I/O2  
I/O1  
A0  
A8  
4
5
6
7
8
9
10  
11  
12  
13  
14  
A13  
WE  
Vcc  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
TSOP1  
A1  
A2  
FUNCTIONAL BLOCK DIAGRAM  
A14  
1
2
3
4
5
6
7
8
9
28 Vcc  
27 WE  
26 A13  
25 A8  
Clk Gen.  
Pre-Charge-Circuit  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A3  
A4  
24 A9  
A5  
A6  
23 A11  
22 OE  
21 A10  
20 CS  
19 I/O8  
18 I/O7  
17 I/O6  
16 I/O5  
15 I/O4  
Memory Array  
512 Rows  
64x8 Columns  
A7  
SOJ  
A8  
A12  
A13  
A14  
A0 10  
I/O1 11  
I/O2 12  
I/O3 13  
Vss 14  
Data  
Cont.  
I/O Circuit  
Column Select  
I/O1~I/O8  
CLK  
Gen.  
PIN FUNCTION  
A0  
A1  
A2  
A9  
A10  
A11  
Pin Name  
A0 - A14  
WE  
Pin Function  
Address Inputs  
Write Enable  
Chip Select  
CS  
WE  
OE  
CS  
OE  
Output Enable  
Data Inputs/Outputs  
Power(+3.3V)  
Ground  
I/O1 ~ I/O8  
VCC  
VSS  
Rev 3.0  
February 1998  
- 2 -  
PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
ABSOLUTE MAXIMUM RATINGS*  
Parameter  
Symbol  
VIN, VOUT  
VCC  
Rating  
-0.5 to 4.6  
-0.5 to 4.6  
1.0  
Unit  
V
Voltage on Any Pin Relative to VSS  
Voltage on VCC Supply Relative to VSS  
Power Dissipation  
V
PD  
W
Storage Temperature  
TSTG  
-65 to 150  
0 to 70  
°C  
°C  
Operating Temperature  
TA  
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and  
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.  
Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C)  
Parameter  
Min  
3.0  
0
Symbol  
VCC  
Typ  
Max  
3.6  
Unit  
V
Supply Voltage  
3.3  
Ground  
VSS  
0
-
0
V
Input High Voltage  
Input Low Voltage  
VIH  
2.2  
-0.3*  
VCC+0.3**  
0.8  
V
VIL  
-
V
* VIL(Min) = -2.0(Pulse Width £ 12ns) for I £ 20mA  
** VIH(Max) = VCC+2.0V(Pulse Width £ 12ns) for I £ 20mA  
DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C,VCC=3.3±0.3V, unless otherwise specified)  
Parameter  
Input Leakage Current  
Output Leakage Current  
Symbol  
Test Conditions  
VIN = VSS to VCC  
Min  
-2  
Max  
2
Unit  
mA  
ILI  
ILO  
CS=VIH or OE=VIH or WE=VIL  
VOUT = VSS to VCC  
-2  
2
mA  
Operating Current  
Standby Current  
ICC  
Min. Cycle, 100% Duty  
CS=VIL, VIN = VIH or VIL, IOUT=0mA  
15ns  
17ns  
-
-
-
-
90  
80  
30  
0.1  
mA  
ISB  
Min. Cycle, CS=VIH  
mA  
mA  
ISB1  
f=0MHz, CS³ VCC-0.2V,  
VIN³ VCC-0.2V or VIN£0.2V  
Output Low Voltage Level  
Output High Voltage Level  
VOL  
VOH  
IOL=8mA  
-
0.4  
-
V
V
IOH=-4mA  
2.4  
CAPACITANCE*(TA=25°C, f=1.0MHz)  
Item  
Input/Output Capacitance  
Input Capacitance  
Symbol  
Test Conditions  
VI/O=0V  
MIN  
Max  
Unit  
CI/O  
CIN  
-
-
8
7
pF  
pF  
VIN=0V  
* Capacitance is sampled and not 100% tested.  
Rev 3.0  
February 1998  
- 3 -  
PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.)  
TEST CONDITIONS  
Parameter  
Value  
Input Pulse Levels  
0V to 3V  
3ns  
Input Rise and Fall Times  
Input and Output timing Reference Levels  
Output Loads  
1.5V  
See below  
Output Loads(A)  
Output Loads(B)  
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ  
+3.3V  
RL = 50W  
DOUT  
319W  
VL = 1.5V  
DOUT  
30pF*  
ZO = 50W  
353W  
5pF*  
* Capacitive Load consists of all components of the  
test environment.  
* Including Scope and Jig Capacitance  
READ CYCLE  
Parameter  
K6E0808V1C-15  
K6E0808V1C-17  
Symbol  
Unit  
Min  
15  
-
Max  
Min  
17  
-
Max  
Read Cycle Time  
tRC  
tAA  
-
15  
15  
7
-
17  
17  
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
Chip Select to Output  
tCO  
tOE  
tLZ  
-
-
Output Enable to Valid Output  
Chip Enable to Low-Z Output  
Output Enable to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Output Hold from Address Change  
Chip Selection to Power Up Time  
Chip Selection to Power DownTime  
-
-
3
-
3
-
tOLZ  
tHZ  
0
-
0
-
0
7
0
8
tOHZ  
tOH  
tPU  
tPD  
0
7
0
8
3
-
3
-
0
-
0
-
-
15  
-
17  
Rev 3.0  
February 1998  
- 4 -  
PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
WRITE CYCLE  
K6E0808V1C-15  
K6E0808V1C-17  
Parameter  
Symbol  
Unit  
Min  
15  
11  
0
Max  
Min  
17  
12  
0
Max  
Write Cycle Time  
tWC  
tCW  
tAS  
-
-
-
-
-
-
-
6
-
-
-
-
-
-
-
-
-
-
6
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select to End of Write  
Address Setup Time  
Address Valid to End of Write  
Write Pulse Width(OE High)  
Write Pulse Width(OE Low)  
Write Recovery Time  
tAW  
tWP  
tWP1  
tWR  
tWHZ  
tDW  
tDH  
11  
11  
15  
0
12  
12  
17  
0
Write to Output High-Z  
0
0
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Output Low-Z  
8
8
0
0
tOW  
0
0
TIMMING DIAGRAMS  
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)  
tRC  
Address  
tAA  
tOH  
Valid Data  
Data Out  
Previous Valid Data  
Rev 3.0  
February 1998  
- 5 -  
PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)  
tRC  
Address  
tAA  
tHZ(3,4,5)  
tCO  
CS  
tOHZ  
tOE  
OE  
tOLZ  
tOH  
tLZ(4,5)  
Data out  
Valid Data  
tPU  
tPD  
ICC  
ISB  
VCC  
50%  
50%  
Current  
NOTES(READ CYCLE)  
1. WE is high for read cycle.  
2. All read cycle timing is referenced from the last valid address to the first transition address.  
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL  
levels.  
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to  
device.  
5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.  
6. Device is continuously selected with CS=VIL.  
7. Address valid prior to coincident with CS transition low.  
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.  
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)  
tWC  
Address  
OE  
tWR(5)  
tAW  
tCW(3)  
CS  
tWP(2)  
tAS(4)  
WE  
tDH  
tDW  
High-Z  
Data in  
Valid Data  
tOHZ(6)  
High-Z(8)  
Data out  
Rev 3.0  
February 1998  
- 6 -  
PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)  
tWC  
Address  
tWR(5)  
tAW  
tCW(3)  
CS  
tAS(4)  
tWP1(2)  
WE  
tDW  
tDH  
High-Z  
Data in  
Valid Data  
tWHZ(6)  
tOW  
(10)  
(9)  
High-Z(8)  
Data out  
TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled)  
tWC  
Address  
tAW  
tWR(5)  
tCW(3)  
tWP(2)  
CS  
tAS(4)  
WE  
tDH  
tDW  
High-Z  
High-Z  
High-Z  
Data in  
Data out  
Valid Data  
tLZ  
tWHZ(6)  
High-Z(8)  
NOTES(WRITE CYCLE)  
1. All write cycle timing is referenced from the last valid address to the first transition address.  
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ;  
A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end  
of write.  
3. tCW is measured from the later of CS going low to end of write.  
4. tAS is measured from the address valid to the beginning of write.  
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.  
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase  
of the output must not be applied because bus contention can occur.  
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.  
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.  
9. Dout is the read data of the new address.  
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be  
applied.  
Rev 3.0  
February 1998  
- 7 -  
PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
FUNCTIONAL DESCRIPTION  
CS  
H
L
WE  
X
OE  
X*  
H
Mode  
Not Select  
Output Disable  
Read  
I/O Pin  
High-Z  
High-Z  
DOUT  
Supply Current  
ISB, ISB1  
ICC  
H
L
H
L
ICC  
L
L
X
Write  
DIN  
ICC  
* NOTE : X means Don¢t Care.  
DATA RETENTION CHARACTERISTICS(TA=0 to 70°C)  
Parameter  
VCC for Data Retention  
Data Retention Current  
Data Retention Set-Up Time  
Recovery Time  
Symbol  
VDR  
Test Condition  
CS³ VCC - 0.2V  
Min.  
Typ.  
Max.  
3.6  
0.07  
-
Unit  
V
2.0  
-
-
-
-
-
IDR  
VCC = 3.0V, CS³ VCC - 0.2V  
mA  
ns  
tSDR  
0
See Data Retention  
Wave form(below)  
tRDR  
5
-
ms  
DATA RETENTION WAVE FORM  
CS controlled  
Data Retention Mode  
tSDR  
tRDR  
VCC  
3.0V  
VIH  
VDR  
CS³ VCC - 0.2V  
CS  
GND  
Rev 3.0  
February 1998  
- 8 -  
PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
PACKAGE DIMENSIONS  
Units:millimeters/Inches  
28-SOJ-300  
#28  
#15  
6.86 ±0.25  
0.270 ±0.010  
8.51 ±0.12  
0.335 ±0.005  
+0.10  
-0.05  
0.20  
+0.004  
0.008-0.002  
#1  
#14  
0.69  
0.027  
MIN  
18.82  
0.741  
MAX  
18.41 ±0.12  
0.725 ±0.005  
1.30  
0.051  
(
)
0.10  
0.004  
3.76  
0.148  
MAX  
MAX  
1.30  
0.051  
(
)
+0.10  
-0.05  
+0.10  
0.71  
0.43  
-0.05  
0.95  
0.0375  
1.27  
0.050  
(
)
+0.004  
-0.002  
+0.004  
-0.002  
0.017  
0.028  
28-TSOP1-0813.4F  
Units:millimeters/Inches  
13.40 ±0.20  
0.528 ±0.008  
+0.10  
-0.05  
+0.004  
-0.002  
0.20  
0.008  
0.425  
(
)
#1  
#28  
0.017  
0.55  
0.0217  
#14  
#15  
1.00 ±0.10  
0.039 ±0.004  
0.25  
TYP  
11.80 ±0.10  
0.465 ±0.004  
0.05  
0.002  
0.010  
+0.10  
-0.05  
+0.004  
-0.002  
MIN  
0.15  
1.20  
MAX  
0.047  
0.006  
0~8°  
0.50  
0.020  
0.45 ~0.75  
0.018 ~0.030  
(
)
Rev 3.0  
February 1998  
- 9 -  

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