K6F1616U6C [SAMSUNG]

16Mb(1M x 16 bit) Low Power SRAM; 16MB ( 1M ×16位)低功耗SRAM
K6F1616U6C
元器件型号: K6F1616U6C
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

16Mb(1M x 16 bit) Low Power SRAM
16MB ( 1M ×16位)低功耗SRAM

静态存储器
PDF文件: 总10页 (文件大小:157K)
下载文档:  下载PDF数据表文档文件
型号参数:K6F1616U6C参数

K6F1616U6C-FF550

Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48

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1 SAMSUNG

K6F1616U6C-FF700

Standard SRAM, 1MX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48

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0 SAMSUNG

K6F1616U6C-XF550

Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, FBGA-48

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0 SAMSUNG

K6F1616U6M

1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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35 SAMSUNG

K6F1616U6M-F

1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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25 SAMSUNG

K6F2008R2E-EF700

Standard SRAM, 256KX8, 70ns, CMOS, PBGA36, 6 X 7 MM, 0.75 MM PITCH, TBGA-48/36

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1 SAMSUNG

K6F2008R2M-TC300

Standard SRAM, 256KX8, 300ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

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0 SAMSUNG

K6F2008R2M-TI300

Standard SRAM, 256KX8, 300ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

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0 SAMSUNG

K6F2008S2E

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

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18 SAMSUNG

K6F2008S2E

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

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14 SAMSUNG

K6F2008S2E-F

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

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14 SAMSUNG

K6F2008S2E-F

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

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14 SAMSUNG

K6F2008S2E-YF70

Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32

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0 SAMSUNG

K6F2008S2M-TC120

Standard SRAM, 256KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

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0 SAMSUNG

K6F2008S2M-TC150

Standard SRAM, 256KX8, 150ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

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0 SAMSUNG