K6F8008R2B-EF700 [SAMSUNG]
Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48;![K6F8008R2B-EF700](http://pdffile.icpdf.com/pdf2/p00266/img/icpdf/K6F8008R2B-E_1602752_icpdf.jpg)
型号: | K6F8008R2B-EF700 |
厂家: | ![]() |
描述: | Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 静态存储器 内存集成电路 |
文件: | 总9页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Preliminary
CMOS SRAM
K6F8008R2B Family
Document Title
1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
Draft Date
October 31, 2001
Remark
0.0
Initial draft
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 0.0
October 2001
Preliminary
CMOS SRAM
K6F8008R2B Family
1M x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
· Process Technology: Full CMOS
· Organization: 1M x8
The K6F8008R2B families are fabricated by SAMSUNG¢s
advanced full CMOS process technology. The families support
industrial operating temperature ranges and have chip scale
package for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
· Power Supply Voltage: 1.65~2.2V
· Low Data Retention Voltage: 1.0V(Min)
· Three State Outputs
· Package Type: 48-TBGA-6.00x7.00
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature Vcc Range
Speed
PKG Type
Standby
(ISB1, Typ.)
Operating
(ICC1, Max)
701)/85ns
0.5mA2)
K6F8008R2B-F
Industrial(-40~85°C)
1.65~2.2V
2mA
48-TBGA-6.00x7.00
1. The parameter is measured with 30pF test load.
2. Typical values are measured at VCC=2.0V, TA=25°C and not 100% tested.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
6
Clk gen.
Precharge circuit.
A
B
C
D
E
F
DNU
DNU
I/O1
Vss
OE
DNU
DNU
I/O2
I/O3
DNU
DNU
A8
A0
A3
A1
A4
A2
CS2
DNU
I/O5
Vcc
Vcc
Vss
CS1
DNU
I/O6
I/O7
DNU
WE
Row
Addresses
Memory array
2048 rows
256´ 8 columns
Row
select
A5
A6
A17
VCC
A14
A12
A9
A7
I/O Circuit
Column select
Data
cont
Vcc
A16
A15
A13
A10
Vss
I/O1~I/O8
I/O4
DNU
A18
I/O8
DNU
A19
Data
cont
G
H
Column Addresses
A11
CS1
CS2
OE
48-TBGA: Top View (Ball Down)
Control Logic
WE
Name
Function
Name
Function
CS1, CS2 Chip Select Inputs
A0~A19 Address Inputs
OE
Output Enable Input
Write Enable Input
Vcc
Vss
Power
WE
Ground
I/O1~I/O16 Data Inputs/Outputs
DNU
Do Not Use
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 0.0
October 2001
Preliminary
CMOS SRAM
K6F8008R2B Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
Function
K6F8008R2B-EF70
K6F8008R2B-EF85
48-TBGA, 70ns, 1.8/2.0V
48-TBGA, 85ns, 1.8/2.0V
FUNCTIONAL DESCRIPTION
CS1
H
CS2
X1)
L
OE
X1)
X1)
H
WE
X1)
X1)
H
I/O1~8
High-Z
High-Z
High-Z
Dout
Mode
Deselected
Deselected
Output Disabled
Read
Power
Standby
Standby
Active
X1)
L
H
L
H
L
H
Active
X1)
L
H
L
Din
Write
Active
1. X means don¢t care. (Must be low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Symbol
Ratings
-0.2 to VCC+0.3V
-0.2 to 2.5
1.0
Unit
V
VIN, VOUT
VCC
V
PD
W
Storage temperature
TSTG
TA
-65 to 150
-40 to 85
°C
°C
Operating Temperature
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 0.0
October 2001
Preliminary
CMOS SRAM
K6F8008R2B Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Vcc
Min
1.65
0
Typ
Max
Unit
V
Supply voltage
Ground
1.8/2.0
2.2
0
Vss
0
-
V
Vcc+0.22)
0.4
Input high voltage
Input low voltage
Note:
VIH
1.4
V
-0.23)
VIL
-
V
1. TA=-40 to 85°C, otherwise specified
2. Overshoot: VCC+1.0V in case of pulse width £20ns.
3. Undershoot: -1.0V in case of pulse width £20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Symbol
CIN
Test Condition
VIN=0V
Min
Max
8
Unit
pF
-
-
Input/Output capacitance
CIO
VIO=0V
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Typ1)
Item
Symbol
ILI
Test Conditions
Min
-1
Max Unit
Input leakage current
Output leakage current
VIN=Vss to Vcc
-
-
1
1
mA
mA
ILO
CS1=VIH, CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
Cycle time=1ms, 100%duty, IIO=0mA, CS1£0.2V,
CS2³ Vcc-0.2V, VIN£0.2V or VIN³ VCC-0.2V
ICC1
-
-
2
mA
Average operating current
85ns
70ns
-
-
-
-
15
17
Cycle time=Min, IIO=0mA, 100% duty,
CS1=VIL, CS2=VIH, VIN=VIL or VIH
ICC2
VOL
mA
Output low voltage
Output high voltage
IOL = 0.1mA
-
-
-
0.2
-
V
V
VOH IOH = -0.1mA
1.4
Other input =0~Vcc
Standby Current(CMOS)
ISB1
1) CS1³ Vcc-0.2V, CS2³ Vcc-0.2V(CS1 controlled) or
2) 0V£CS2£0.2V(CS2 controlled)
-
0.5
10
mA
1. Typical values are measured at VCC=2.0V, TA=25°C and not 100% tested.
4
Revision 0.0
October 2001
Preliminary
CMOS SRAM
K6F8008R2B Family
3)
VTM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.2 to Vcc-0.2V
2)
R1
Input rising and falling time: 5ns
Input and output reference voltage: 0.9V
Output load(see right): CL=100pF+1TTL
CL=30pF+1TTL
1)
2)
CL
R2
1. Including scope and jig capacitance
2. R1=3070W, R2=3150W
3. VTM =1.8V
AC CHARACTERISTICS (Vcc=1.65~2.2V, Industrial product: TA=-40 to 85°C)
Speed Bins
Parameter List
Symbol
Units
70ns
85ns
Min
70
-
Max
Min
Max
Read Cycle Time
tRC
tAA
-
70
70
35
-
85
-
-
85
85
40
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Select to Output
tCO
tOE
-
-
Output Enable to Valid Output
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
-
-
Read
tLZ
10
5
10
5
tOLZ
tHZ
-
-
0
25
25
-
0
25
25
-
tOHZ
tOH
tWC
tCW
tAS
0
0
10
70
60
0
10
85
70
0
-
-
Chip Select to End of Write
Address Set-up Time
-
-
-
-
Address Valid to End of Write
Write Pulse Width
tAW
tWP
tWR
tWHZ
tDW
tDH
60
50
0
-
70
60
0
-
-
-
Write
Write Recovery Time
-
-
Write to Output High-Z
0
20
-
0
25
-
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
30
0
35
0
-
-
tOW
5
-
5
-
DATA RETENTION CHARACTERISTICS
Typ2)
Item
Symbol
Test Condition
CS1³ Vcc-0.2V1)
Min
1.0
-
Max
Unit
V
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
VDR
-
0.5
-
2.2
Vcc=1.2V, CS1³ Vcc-0.2V1)
IDR
6
-
mA
tSDR
0
See data retention waveform
ns
tRDR
tRC
-
-
1. CS1³ Vcc-0.2V, CS2³ Vcc-0.2V(CS1 controlled) or CS2£0.2V(CS2 controlled).
2. Typical values are measured at TA=25°C and not 100% tested.
5
Revision 0.0
October 2001
Preliminary
CMOS SRAM
K6F8008R2B Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH)
tRC
Address
tAA
tOH
Data Valid
Data Out
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC
Address
tOH
tAA
tCO1
CS1
tHZ(1,2)
CS2
tCO2
tOE
OE
tOHZ
tOLZ
tLZ
High-Z
Data out
Data Valid
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6
Revision 0.0
October 2001
Preliminary
CMOS SRAM
K6F8008R2B Family
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
tWC
Address
tWR(4)
tCW(2)
CS1
tAW
CS2
tCW(2)
tWP(1)
WE
tAS(3)
tDW
tDH
Data Valid
Data in
tWHZ
tOW
Data Undefined
Data out
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
tWC
Address
CS1
tCW(2)
tAS(3)
tWR(4)
tAW
CS2
tWP(1)
WE
tDW
tDH
Data in
Data out
Data Valid
High-Z
High-Z
7
Revision 0.0
October 2001
Preliminary
CMOS SRAM
K6F8008R2B Family
TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 Controlled)
tWC
Address
CS1
tAS(3)
tCW(2)
tWR(4)
tAW
CS2
tCW(2)
tWP(1)
WE
tDH
tDW
Data in
Data Valid
High-Z
High-Z
Data out
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low,
CS2 going high and WE going low : A write end at the earliest transition among CS1 going high, CS2 going low and WE going high,
tWP is measured from the begining of write to the end of write.
2. tCW is measured from the CS1 going low or CS2 going high to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS1 or WE going high tWR2 applied
in case a write ends as CS2 going to low.
DATA RETENTION WAVE FORM
CS1 controlled
Data Retention Mode
tSDR
tRDR
VCC
1.65V
1.4V
VDR
CS1³ VCC - 0.2V
CS1
GND
CS2 controlled
Data Retention Mode
VCC
1.65V
CS2
tSDR
tRDR
VDR
CS2£0.2V
0.4V
GND
8
Revision 0.0
October 2001
Preliminary
CMOS SRAM
K6F8008R2B Family
Unit: millimeters
PACKAGE DIMENSION
48 TAPE BALL GRID ARRAY(0.75mm ball pitch)
Top View
B
Bottom View
B
B1
6
5
4
3
2
1
A
B
#A1
C
D
E
F
G
H
B/2
Detail A
A
Side View
D
Y
C
Min
Typ
0.75
6.00
3.75
7.00
5.25
0.45
0.90
0.55
0.35
-
Max
-
A
B
-
5.90
-
Notes.
6.10
-
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
B1
C
6.90
-
7.10
-
C1
D
4. Typ: Typical
0.40
0.80
-
0.50
1.00
-
5. Y is coplanarity: 0.08(Max)
E
E1
E2
Y
0.30
-
0.40
0.08
9
Revision 0.0
October 2001
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