K6R4016V1D-UC08T [SAMSUNG]
Standard SRAM, 256KX16, 8ns, CMOS, PDSO44;
| 型号： | K6R4016V1D-UC08T |
| 厂家： | 
SAMSUNG |
| 描述： | Standard SRAM, 256KX16, 8ns, CMOS, PDSO44 静态存储器 光电二极管 |
| 文件： | 总12页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
Document Title
256Kx16 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
History
Draft Data
Remark
Initial release with Preliminary.
Add Low Ver.
Aug. 20. 2001
Sep. 19. 2001
Sep. 28. 2001
Oct. 09. 2001
Preliminary
Preliminary
Preliminary
Preliminary
Package dimensions modify on page 11.
Change ICC , ISB, ISB1
Item
Previous
Current
80mA
65mA
55mA
45mA
100mA
85mA
75mA
65mA
20mA
1.2mA
8ns
110mA
90mA
80mA
70mA
130mA
115mA
100mA
85mA
30mA
0.5mA
10ns
12ns
15ns
8ns
10ns
12ns
15ns
ICC(Commercial)
ICC(Industrial)
ISB
ISB1(L-ver.)
Rev. 0.4
Rev. 1.0
1. Correct AC parameters : Read & Write Cycle
2. Change Data Retention Current :
from 0.45mA to 1.1mA when Vcc=3.0V
from 0.35mA to 0.9mA when Vcc=2.0V
3. Limit L-Ver. to 48 TBGA Package
Nov.23. 2001
Dec.18. 2001
Preliminary
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
Final
Item
Previous
100mA
85mA
Current
90mA
75mA
8ns
10ns
ICC(Industrial)
Rev. 2.0
Rev. 2.1
Rev. 2.2
Rev. 2.3
Rev. 3.0
Rev. 4.0
1. Add tBA,tBLZ,tBHZ,tBW AC parematers.
1. Correct the Package dimensions(48-TBGA)
1. Add the tPU and tPD into the waveform.
1. Change the current parameters (Isb1 L-ver, Idr)
1. Add the Lead Free Package type.
Feb. 14. 2002
Oct. 23. 2002
Mar. 10, 2003
Final
Final
Final
June. 12, 2003 Final
June. 20, 2003 Final
1. Change the Idr parameters
Mar. 15, 2004
Final
previous
1.2mA
1.8mA
Current
1.4mA
2.0mA
Idr(2V)
Idr(3V)
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev 4.0
Mar. 2004
- 1 -
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
4Mb Async. Fast SRAM Ordering Information
Org.
Part Number
K6R4004C1D-J(K)C(I) 10
K6R4004V1D-J(K)C(I) 08/10
K6R4008C1D-J(K,T,U)C(I) 10
VDD(V)
Speed ( ns )
PKG
Temp. & Power
5
3.3
5
10
8/10
10
J : 32-SOJ
1M x4
K : 32-SOJ(LF) C : Commercial Temperature
,Normal Power Range
I : Industrial Temperature
,Normal Power Range
L : Commercial Temperature
,Low Power Range
P : Industrial Temperature
,Low Power Range
J : 36-SOJ
K : 36-SOJ(LF)
T : 44-TSOP2
U : 44-TSOP2(LF)
512K x8
K6R4008V1D-J(K,T,U)C(I) 08/10
K6R4016C1D-J(K,T,U,E)C(I) 10
K6R4016V1D-J(K,T,U,E)C(I,L,P) 08/10
3.3
5
8/10
10
J : 44-SOJ
K : 44-SOJ(LF)
T : 44-TSOP2
U : 44-TSOP2(LF)
E : 48-TBGA
256K x16
3.3
8/10
Rev 4.0
Mar. 2004
- 2 -
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
256K x 16 Bit High-Speed CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
• Fast Access Time 8,10ns(Max.)
The K6R4016V1D is a 4,194,304-bit high-speed Static Random
Access Memory organized as 262,144 words by 16 bits. The
K6R4016V1D uses 16 common input and output lines and has
an output enable pin which operates faster than address
access time at read cycle. Also it allows that lower and upper
byte access by data byte control(UB, LB). The device is fabri-
cated using SAMSUNG′s advanced CMOS process and
designed for high-speed circuit technology. It is particularly well
suited for use in high-density high-speed system applications.
The K6R4016V1D is packaged in a 400mil 44-pin plastic SOJ
or TSOP(II) forward or 48 TBGA.
• Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
1.2mA(Max.)L-Ver. only.
Operating K6R4016V1D-08 : 80mA(Max.)
K6R4016V1D-10 : 65mA(Max.)
• Single 3.3 ±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention: L-Ver. only.
• Center Power/Ground Pin Configuration
• Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16
• Standard Pin Configuration
K6R4016V1D-J : 44-SOJ-400
K6R4016V1D-K : 44-SOJ-400(Lead-Free)
K6R4016V1D-T : 44-TSOP2-400BF
K6R4016V1D-U : 44-TSOP2-400BF (Lead-Free)
K6R4016V1D-E : 48-TBGA with 0.75 Ball pitch
(7mm X 9mm)
• Operating in Commercial and Industrial Temperature range.
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
Pre-Charge Circuit
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
Memory Array
1024 Rows
256 x 16 Columns
Data
Cont.
I/O Circuit &
Column Select
I/O1~I/O8
Data
Cont.
I/O9~I/O16
Gen.
CLK
A10 A11 A12 A13 A14 A15 A16 A17
WE
OE
UB
LB
CS
Rev 4.0
Mar. 2004
- 3 -
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
PIN CONFIGURATION (Top View)
1
2
3
4
5
6
A0
A1
1
2
3
4
5
6
7
8
9
44 A17
43 A16
42 A15
41 OE
A
B
C
D
E
F
LB
OE
UB
A0
A3
A1
A4
A2
N.C
I/O9
I/O10
Vcc
A2
A3
I/O1
CS
A4
40 UB
CS
I/O1
I/O2
I/O3
39 LB
I/O2
Vss
I/O3
I/O4
I/O5
I/O6
N.C
A8
A5
A6
I/O11
I/O12
I/O13
I/O14
WE
38 I/O16
37 I/O15
36 I/O14
35 I/O13
34 Vss
33 Vcc
32 I/O12
31 I/O11
30 I/O10
29 I/O9
28 N.C
27 A14
26 A13
25 A12
24 A11
23 A10
A17
N.C
A14
A12
A9
A7
I/O4 10
Vcc 11
Vss 12
I/O5 13
I/O6 14
I/O7 15
I/O8 16
WE 17
A5 18
SOJ/
TSOP2
Vcc
I/O7
I/O8
N.C
A16
A15
A13
A10
Vss
I/O15
I/O16
N.C
G
H
A11
A6 19
A7 20
48-TBGA
A8 21
A9 22
PIN FUNCTION
Pin Name
A0 - A17
WE
Pin Function
Address Inputs
Write Enable
Chip Select
CS
OE
Output Enable
LB
Lower-byte Control(I/O1~I/O8)
Upper-byte Control(I/O9~I/O16)
Data Inputs/Outputs
Power(+3.3V)
UB
I/O1 ~ I/O16
VCC
VSS
Ground
N.C
No Connection
ABSOLUTE MAXIMUM RATINGS*
Parameter
Symbol
VIN, VOUT
VCC
Rating
Unit
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
-0.5 to 4.6
-0.5 to 4.6
1.0
V
V
PD
W
°C
°C
°C
Storage Temperature
TSTG
TA
-65 to 150
0 to 70
Operating Temperature
Commercial
Industrial
TA
-40 to 85
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Rev 4.0
Mar. 2004
- 4 -
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
V
Supply Voltage
VCC
3.0
3.3
3.6
Ground
VSS
0
0
-
0
V
Input High Voltage
Input Low Voltage
VIH
2.0
VCC+0.3***
0.8
V
VIL
-0.3**
-
V
*
The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
µA
Input Leakage Current
Output Leakage Current
ILI
VIN=VSS to VCC
-2
2
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
µA
Operating Current
Standby Current
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
Com.
Ind.
8ns
10ns
8ns
-
80
65
90
75
20
5
mA
-
-
10ns
-
ISB
Min. Cycle, CS=VIH
-
mA
ISB1
f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
Normal
-
-
L-ver.**
2.4
0.4
-
Output Low Voltage Level
Output High Voltage Level
VOL
VOH
IOL=8mA
-
V
V
IOH=-4mA
2.4
* The above parameters are also guaranteed at industrial temperature range.
** L-var is only supported with TBGA package type.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
Test Conditions
VI/O=0V
TYP
Max
8
Unit
-
-
pF
pF
CIN
VIN=0V
6
* Capacitance is sampled and not 100% tested.
Rev 4.0
Mar. 2004
- 5 -
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Value
Input Pulse Levels
0V to 3V
3ns
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
1.5V
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
Output Loads(A)
+3.3V
RL = 50Ω
DOUT
319Ω
VL = 1.5V
DOUT
30pF*
ZO = 50Ω
353Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
K6R4016V1D-08
K6R4016V1D-10
Min Max
Parameter
Symbol
Unit
Min
8
-
Max
Read Cycle Time
tRC
tAA
-
8
8
4
4
-
10
-
-
10
10
5
5
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Select to Output
tCO
tOE
tBA
-
-
Output Enable to Valid Output
UB, LB Access Time
-
-
-
-
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
UB, LB Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
tLZ
3
0
0
0
0
0
3
0
-
3
0
0
0
0
0
3
0
-
tOLZ
tBLZ
tHZ
-
-
-
-
4
4
4
-
5
5
5
-
tOHZ
tBHZ
tOH
tPU
-
-
tPD
8
10
* The above parameters are also guaranteed at industrial temperature range.
Rev 4.0
Mar. 2004
- 6 -
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
WRITE CYCLE*
Parameter
K6R4016V1D-08
Max
K6R4016V1D-10
Max
Symbol
Unit
Min
8
Min
10
7
Write Cycle Time
tWC
tCW
tAS
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
-
5
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Set-up Time
6
0
0
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
UB, LB Valid to End of Write
Write Recovery Time
tAW
tWP
tWP1
tBW
tWR
tWHZ
tDW
tDH
6
7
6
7
8
10
7
6
0
0
Write to Output High-Z
0
0
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
4
5
0
0
tOW
3
3
* The above parameters are also guaranteed at industrial temperature range.
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB, LB=VIL)
tRC
Address
tAA
tOH
Valid Data
Data Out
Previous Valid Data
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC
Address
tAA
tCO
tHZ(3,4,5)
CS
tBHZ(3,4,5)
tBA
UB, LB
OE
tBLZ(4,5)
tOHZ
tOE
tOLZ
tOH
tLZ(4,5)
Data out
High-Z
Valid Data
tPU
tPD
ICC
ISB
VCC
50%
50%
Current
Rev 4.0
Mar. 2004
- 7 -
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL
levels.
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to
device.
5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=VIL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF WRITE CYCLE(1) (OE Clock)
tWC
Address
tAW
tWR(5)
OE
tCW(3)
CS
tBW
UB, LB
tAS(4)
tWP(2)
WE
tDW
tDH
High-Z
High-Z
Data in
Data out
Valid Data
tOHZ(6)
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low fixed)
tWC
Address
tAW
tWR(5)
tCW(3)
tBW
CS
UB, LB
WE
tWP1(2)
tAS(4)
tDW
tDH
High-Z
Valid Data
Data in
(9)
(10)
tWHZ(6)
tOW
High-Z
Data out
Rev 4.0
Mar. 2004
- 8 -
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled)
tWC
Address
CS
tAW
tWR(5)
tCW(3)
tBW
UB, LB
tAS(4)
WE
tWP(2)
tDH
tDW
High-Z
High-Z
Data in
Valid Data
tLZ
tWHZ(6)
High-Z(8)
High-Z
Data out
TIMING WAVEFORM OF WRITE CYCLE(4) (UB, LB Controlled)
tWC
Address
CS
tAW
tCW(3)
tWR(5)
tBW
UB, LB
tAS(4)
tWP(2)
WE
tDH
tDW
High-Z
Data in
Valid Data
tBLZ
tWHZ(6)
High-Z(8)
High-Z
Data out
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS,WE,LB and UB. A write begins at the latest transition CS going low and WE
going low ; A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write
to the end of write.
3. tCW is measured from the later of CS going low to end of write.
4. tAS is measured from the address valid to the beginning of write.
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not . be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
Rev 4.0
Mar. 2004
- 9 -
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
FUNCTIONAL DESCRIPTION
I/O Pin
CS
WE
OE
LB
UB
Mode
Supply Current
I/O1~I/O8
High-Z
I/O9~I/O16
High-Z
H
L
L
L
X
H
X
H
X*
H
X
X
X
H
L
X
X
H
H
L
Not Select
ISB, ISB1
ICC
Output Disable
High-Z
High-Z
L
Read
Write
DOUT
High-Z
DOUT
DIN
High-Z
DOUT
DOUT
High-Z
DIN
ICC
ICC
H
L
L
L
L
X
L
H
L
H
L
High-Z
DIN
L
DIN
* X means Don′t Care.
DATA RETENTION CHARACTERISTICS*(TA=0 to 70°C)
Parameter
VCC for Data Retention
Data Retention Current
Symbol
VDR
Test Condition
CS ≥VCC - 0.2V
Min.
Typ.
Max.
Unit
2.0
-
3.6
V
IDR
VCC=3.0V, CS≥VCC - 0.2V
VIN ≥ VCC - 0.2V or VIN≤0.2V
-
-
-
-
2.0
1.4
mA
VCC=2.0V, CS≥VCC - 0.2V
VIN≥VCC - 0.2V or VIN≤0.2V
Data Retention Set-Up Time
Recovery Time
tSDR
tRDR
See Data Retention
Wave form(below)
0
5
-
-
-
-
ns
ms
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-ver only.
DATA RETENTION WAVE FORM
CS controlled
Data Retention Mode
tSDR
tRDR
VCC
3.0V
VIH
VDR
CS≥VCC - 0.2V
CS
GND
Rev 4.0
Mar. 2004
- 10
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
PACKAGE DIMENSIONS
44-SOJ-400
Units:millimeters/Inches
#44
#23
9.40 ±0.25
0.370 ±0.010
11.18 ±0.12
0.440 ±0.005
+0.10
-0.05
0.20
0.008 +0.004
-0.002
#1
#22
28.98
1.141
0.69
0.027
MAX
MIN
25.58 ±0.12
1.125 ±0.005
1.19
0.047
1.27
(
)
3.76
0.148
MAX
(
)
0.050
0.10
MAX
0.004
+0.10
-0.05
0.43
+0.10
-0.05
0.71
0.017 +0.004
0.95
0.0375
1.27
0.050
-0.002
(
)
0.028 +0.004
-0.002
44-TSOP2-400BF
Units:millimeters/Inches
0~8°
0.25
0.010
TYP
#23
#44
0.45 ~0.75
0.018 ~ 0.030
11.76 ±0.20
0.463 ±0.008
0.50
0.020
(
)
#1
#22
18.81
0.741
MAX
+ 0.075
- 0.035
+ 0.003
- 0.001
0.125
0.005
18.41 ±0.10
0.725 ±0.004
1.00 ±0.10
0.039 ±0.004
1.20
0.047
MAX
0.10
0.004
MAX
+0.10
−0.05
+0.004
−0.002
0.05
0.002
0.30
MIN
0.80
0.0315
0.805
0.032
(
)
0.012
Rev 4.0
Mar. 2004
- 11
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1D
PACKAGE DIMENSIONS
Units : millimeter.
Top View
Bottom View
B
A1 INDEX MARK
0.50
0.50
B
B1
6
5
4
3
2
1
A
B
#A1
C
D
E
F
G
H
B/2
Detail A
A
Side View
D
Y
C
Min
Typ
Max
-
A
B
-
6.90
-
0.75
7.00
3.75
9.00
5.25
0.45
0.90
0.55
0.35
-
Notes.
7.10
-
1. Bump counts: 48(8row x 6column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
B1
C
8.90
-
9.10
-
C1
D
4. Typ : Typical
0.40
0.80
-
0.50
1.00
-
5. Y is coplanarity: 0.08(Max)
E
E1
E2
Y
0.30
-
0.40
0.08
Rev 4.0
Mar. 2004
- 12
相关型号：
K6R4016V1D-UC100
Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
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K6R4016V1D-UI100
Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
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