K6T2016U3M-TB10 [SAMSUNG]

Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44;
K6T2016U3M-TB10
型号: K6T2016U3M-TB10
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

静态存储器 光电二极管 内存集成电路
文件: 总9页 (文件大小:134K)
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K6T2016U3M-TB85

Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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0 SAMSUNG

K6T2016U3M-TB850

Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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0 SAMSUNG

K6T2016U3M-TF100

Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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-
0 SAMSUNG

K6T2016U3M-TF850

Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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-
0 SAMSUNG

K6T4008C

512Kx8 bit Low Power CMOS Static RAM

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41 SAMSUNG

K6T4008C

512Kx8 bit Low Power CMOS Static RAM

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-
119 SAMSUNG

K6T4008C

512Kx8 bit Low Power CMOS Static RAM

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32 SAMSUNG

K6T4008C1B

512Kx8 bit Low Power CMOS Static RAM

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68 SAMSUNG

K6T4008C1B

512Kx8 bit Low Power CMOS Static RAM

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34 SAMSUNG

K6T4008C1B-B

512Kx8 bit Low Power CMOS Static RAM

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19 SAMSUNG

K6T4008C1B-B

512Kx8 bit Low Power CMOS Static RAM

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33 SAMSUNG

K6T4008C1B-DB55

512Kx8 bit Low Power CMOS Static RAM

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31 SAMSUNG

K6T4008C1B-DB55

512Kx8 bit Low Power CMOS Static RAM

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21 SAMSUNG

K6T4008C1B-DB55

Standard SRAM, 512KX8, 55ns, CMOS, PDIP32, 0.600 INCH, DIP-32

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-
0 SAMSUNG

K6T4008C1B-DB550

Standard SRAM, 512KX8, 55ns, CMOS, PDIP32, 0.600 INCH, DIP-32

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0 SAMSUNG