K6T4008V1B-VB700 [SAMSUNG]
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32;型号: | K6T4008V1B-VB700 |
厂家: | SAMSUNG |
描述: | Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 静态存储器 光电二极管 内存集成电路 |
文件: | 总9页 (文件大小:145K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
K6T4008V1B, K6T4008U1B Family
CMOS SRAM
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No. History
Draft Data
Remark
0.0
1.0
Initial draft
December 17, 1996
Januarary 14, 1998
Preliminary
Final
Finalize
- Change datasheet format
- Erase low power part from product
- Erase 70ns part from KM68U4000B family
- Power dissipation Improved 0.7 to 1.0W
- VIL(MAX) improved 0.4 to 0.6V.
- ICC2 decreased 50 to 45mA.
2.0
3.0
Revise
February 12, 1998
February 25, 2000
Final
Final
- ICC1 decreased 20 to 25mA
Revise
- Adopt new code.
KM68V4000B ® K6T4008V1B
KM68U4000B ® K6T4008U1B
- Improve VOH on D’ C AND OPERATING CHARACTERISTICS’from
2.2 to 2.4V.
4.0
Revise
- Add 70ns part to K6T4008V1B-F family
August 31, 2000
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision 3.0
1
August 2000
K6T4008V1B, K6T4008U1B Family
CMOS SRAM
512K´ 8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
· Process Technology: TFT
The K6T4008V1B and K6T4008U1B families are fabricated by
SAMSUNG¢s advanced CMOS process technology. The fami-
lies support various operating temperature range and have var-
ious package type for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
· Organization: 512K´ 8
· Power Supply Voltage
K6T4008V1B Family: 3.0~3.6V
K6T4008U1B Family: 2.7~3.3V
· Low Data Retention Voltage: 2V(Min)
· Three State Outputs
· Package Type: 32-SOP, 32-TSOP2-400F/R
PRODUCT FAMILY
Power Dissipation
Product Family Operating Temperature Vcc Range
Speed
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
701)/851)/100ns
851)/100ns
K6T4008V1B-B
K6T4008U1B-B
K6T4008V1B-F
K6T4008U1B-F
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
Commercial(0~70°C)
Industrial(-40~85°C)
15mA
20mA
32-SOP
32-TSOP2-400F/R
45mA
701)/851)/100ns
851)/100ns
1. The paramerter is measured with 30pF test load.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A18
A16
A14
A12
A7
VCC
A15
A17
WE
A13
A8
1
VCC
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
A18
A16
A14
A12
A7
2
A15
A17
A18
A16
3
WE
A13
A8
4
A14
A12
A7
5
Memory array
1024 rows
512´ 8 columns
Row
select
A6
6
A6
7
A9
A9
A5
A6
A5
32-TSOP2
Reverse
32-SOP
32-TSOP2
Forward
A5
8
A11
OE
A11
OE
A4
8
9
A4
A4
A3
9
A3
A1
A2
10
11
12
13
14
15
16
A10
CS
A10
CS
10
11
12
13
14
15
16
A2
A0
A1
A1
I/O8
I/O7
I/O6
I/O5
I/O4
A0
I/O8
I/O7
I/O6
I/O5
I/O4
A0
Data
cont
I/O Circuit
I/O1
I/O8
I/O1
I/O2
I/O3
VSS
I/O1
I/O2
I/O3
VSS
Column select
Data
cont
A9 A8 A13A17A15A10A11 A3 A2
Name Function
Name Function
I/O1~I/O8 Data Inputs/Outputs
CS
OE
WE
Chip Select Input
Output Enable Input
Write Enable Input
Vcc
Vss
Power
CS
Control
logic
WE
OE
Ground
A0~A18 Address Inputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Revision 3.0
August 2000
2
K6T4008V1B, K6T4008U1B Family
CMOS SRAM
PRODUCT LIST
Commercial Temp Products(0~70°C)
Industrial Temp Products(-40~85°C)
Part Name
Function
Part Name
Function
K6T4008V1B-GB70
K6T4008V1B-GB80
K6T4008V1B-GB10
32-SOP, 70ns, 3.3V,LL
32-SOP, 85ns, 3.3V,LL
32-SOP, 100ns, 3.3V,LL
K6T4008V1B-GF70
K6T4008V1B-GF85
K6T4008V1B-GF10
32-SOP, 70ns, 3.3V,LL
32-SOP, 85ns, 3.3V,LL
32-SOP, 100ns, 3.3V,LL
K6T4008V1B-VB70
K6T4008V1B-VB85
K6T4008V1B-VB10
K6T4008V1B-MB70
K6T4008V1B-MB85
K6T4008V1B-MB10
32-TSOP2-F, 70ns, 3.3V,LL
32-TSOP2-F, 85ns, 3.3V,LL
32-TSOP2-F, 100ns, 3.3V,LL
32-TSOP2-R, 70ns, 3.3V,LL
32-TSOP2-R, 85ns, 3.3V,LL
32-TSOP2-R, 100ns, 3.3V,LL
K6T4008V1B-VF70
K6T4008V1B-VF85
K6T4008V1B-VF10
K6T4008V1B-MF70
K6T4008V1B-MF85
K6T4008V1B-MF10
32-TSOP2-F, 70ns, 3.3V,LL
32-TSOP2-F, 85ns, 3.3V,LL
32-TSOP2-F, 100ns, 3.3V,LL
32-TSOP2-R, 70ns, 3.3V,LL
32-TSOP2-R, 85ns, 3.3V,LL
32-TSOP2-R, 100ns, 3.3V,LL
K6T4008U1B-GB85
K6T4008U1B-GB10
32-SOP, 85ns, 3.0V,LL
32-SOP, 100ns, 3.0V,LL
K6T4008U1B-GF85
K6T4008U1B-GF10
32-SOP, 85ns, 3.0V,LL
32-SOP, 100ns, 3.0V,LL
K6T4008U1B-VB85
K6T4008U1B-VB10
K6T4008U1B-MB85
K6T4008U1B-MB10
32-TSOP2-F, 85ns, 3.0V,LL
32-TSOP2-F, 100ns, 3.0V,LL
32-TSOP2-R, 85ns, 3.0V,LL
32-TSOP2-R, 100ns, 3.0V,LL
K6T4008U1B-VF85
K6T4008U1B-VF10
K6T4008U1B-MF85
K6T4008U1B-MF10
32-TSOP2-F, 85ns, 3.0V,LL
32-TSOP2-F, 100ns, 3.0V,LL
32-TSOP2-R, 85ns, 3.0V,LL
32-TSOP2-R, 100ns, 3.0V,LL
Note: LL means Low Low standby current
FUNCTIONAL DESCRIPTION
CS
H
L
OE
WE
I/O
High-Z
High-Z
Dout
Mode
Power
Standby
Active
X1)
H
X1)
H
Deselected
Output Disabled
Read
L
L
H
L
Active
X1)
L
Din
Write
Active
1. X means don¢t care (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item
Symbol
Ratings
Unit
V
Remark
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
VIN,VOUT
VCC
-0.5 to VCC+0.5
-0.3 to 4.6
1
-
V
-
PD
W
-
Storage temperature
TSTG
-65 to 150
0 to 70
°C
°C
°C
-
K6T4008V1B-B, K6T4008U1B-B
K6T4008V1B-F, K6T4008U1B-F
-
Operating Temperature
TA
-40 to 85
Soldering temperature and time
TSOLDER
260°C, 10sec (Lead Only)
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Revision 3.0
3
August 2000
K6T4008V1B, K6T4008U1B Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Product
Min
Typ
Max
Unit
K6T4008V1B Family
K6T4008U1B Family
3.0
2.7
3.3
3.0
3.6
3.3
Supply voltage
Vcc
V
Ground
Vss
VIH
VIL
All Family
0
0
-
0
V
V
V
Vcc+0.32)
0.6
Input high voltage
Input low voltage
Note:
K6T4008V1B, K6T4008U1B Family
K6T4008V1B, K6T4008U1B Family
2.2
-0.33)
-
1. Commercial Product: TA=0 to 70°C, otherwise specified.
Industrial Product: TA=-40 to 85°C, otherwise specified.
2. Overshoot: VCC+3.0V in case of pulse width £ 30ns.
3. Undershoot: -3.0V in case of pulse width £ 30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Symbol
CIN
Test Condition
VIN=0V
Min
Max
8
Unit
pF
-
-
Input/Output capacitance
CIO
VIO=0V
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
ILI
Min Typ Max Unit
Test Conditions
Input leakage current
Output leakage current
Operating power supply
VIN=Vss to Vcc
-1
-
-
-
-
-
-
-
-
-
-
1
1
mA
mA
mA
ILO
CS=VIH or OE=VIH or WE=VIL VIO=Vss to Vcc
IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
-1
ICC
-
10
10
25
45
0.4
-
Read
Write
-
Cycle time=1ms, 100% duty, IIO=0mA, CS£0.2V
VIN£0.2V or VIN³ Vcc-0.2V
ICC1
mA
Average operating current
-
ICC2
VOL
VOH
ISB
Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
IOL=2.1mA
-
mA
V
Output low voltage
Output high voltage
Standby Current(TTL)
Standby
-
2.4
-
IOH=-1.0mA
V
CS=VIH, Other inputs = VIL or VIH
CS³ Vcc-0.2V, Other inputs=0~Vcc
0.5
mA
mA
151)
ISB1
-
1. Industrial product = 20mA
Revision 3.0
August 2000
4
K6T4008V1B, K6T4008U1B Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS( Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
1)
CL
Input and output reference voltage:1.5V
Output load(see right): CL=100pF+1TTL
1)
CL =30pF+1TTL
1. Including scope and jig capacitance
1. K6T4008V1B-70, K6T4008V1B-85 Family and K6T4008U1B-85 Family
AC CHARACTERISTICS (K6T4008V1B Family: Vcc=3.0~3.6V, K6T4008U1B Family: Vcc=2.7~3.3V
Commercial product: TA=0 to 70°C, Industrial product: TA=-40 to 85°C)
Speed Bins
Parameter List
Symbol
Units
70ns
Max
85ns
Max
100ns
Min
70
-
Min
85
-
Min
Max
Read cycle time
tRC
tAA
-
70
70
35
-
-
85
85
40
-
100
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
100
Chip select to output
tCO
tOE
-
-
-
100
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
-
-
-
50
-
Read
tLZ
10
5
10
5
10
5
tOLZ
tHZ
-
-
-
0
25
25
-
0
25
25
-
0
30
30
-
tOHZ
tOH
tWC
tCW
tAS
0
0
0
10
70
60
0
10
85
70
0
15
100
80
0
-
-
-
Chip select to end of write
Address set-up time
-
-
-
-
-
-
Address valid to end of write
Write pulse width
tAW
tWP
tWR
tWHZ
tDW
tDH
60
55
0
-
70
55
0
-
80
70
0
-
-
-
-
Write
Write recovery time
-
-
-
Write to output high-Z
0
25
-
0
25
-
0
30
-
Data to write time overlap
Data hold from write time
End write to output low-Z
30
0
35
0
40
0
-
-
-
tOW
5
-
5
-
5
-
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Min
Typ
Max
Unit
V
Vcc for data retention
Data retention current
Data retention set-up time
VDR
CS³ Vcc-0.2V
2.0
-
-
0.5
-
3.6
151)
-
IDR
Vcc=3.0V, CS³ Vcc-0.2V
mA
tSDR
0
See data retention waveform
ms
Recovery time
tRDR
5
-
-
1. Industrial product = 20mA
Revision 3.0
August 2000
5
K6T4008V1B, K6T4008U1B Family
CMOS SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tRC
Address
tAA
tOH
Data Valid
Data Out
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC
Address
tOH
tAA
tCO1
CS
tHZ
tOE
OE
tOLZ
tLZ
tOHZ
High-Z
Data out
Data Valid
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
Revision 3.0
August 2000
6
K6T4008V1B, K6T4008U1B Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
tWC
Address
tCW(2)
tWR(4)
CS
tAW
tWP(1)
WE
tAS(3)
tDW
tDH
Data Valid
Data in
tWHZ
tOW
Data Undefined
Data out
TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)
tWC
Address
tCW(2)
tAS(3)
tWR(4)
CS
tAW
tWP(1)
WE
tDW
tDH
Data in
Data Valid
High-Z
Data out
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE going
low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write to the
end of write.
2. tCW is measured from the CS going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
Data Retention Mode
tSDR
tRDR
VCC
3.0/2.7V
2.2V
VDR
CS³ VCC - 0.2V
CS
GND
Revision 3.0
August 2000
7
K6T4008V1B, K6T4008U1B Family
CMOS SRAM
Units : millimeter(inch)
PACKAGE DIMENSIONS
32 PIN PLASTIC SMALL OUTLINE PACKAGE (525mil)
0~8°
#32
#17
11.43±0.20
0.450±0.008
14.12±0.30
0.556±0.012
0.80±0.20
0.031±0.008
+0.10
-0.05
0.20
#1
#16
2.74±0.20
0.108±0.008
+0.004
20.87
0.822
0.008
MAX
-0.002
3.00
MAX
20.47±0.20
0.806±0.008
0.118
0.10 MAX
0.004 MAX
+0.100
-0.050
0.41
0.71
0.028
1.27
0.050
+0.004
-0.002
(
)
0.05
0.002
0.016
MIN
Revision 3.0
August 2000
8
K6T4008V1B, K6T4008U1B Family
PACKAGE DIMENSIONS
CMOS SRAM
Units : millimeter(inch)
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0~8°
0.25
0.010
(
)
#32
#17
0.45~0.75
0.018 ~ 0.030
11.76±0.20
0.463±0.008
#1
#16
0.50
0.020
(
)
+0.10
-0.05
+0.004
-0.002
0.15
21.35
0.841
1.00±0.10
0.039±0.004
MAX
0.006
1.20
0.047
20.95±0.10
0.825±0.004
MAX
0.10 MAX
0.004 MAX
0.05
0.002
MIN
1.27
0.050
0.95
0.037
0.40±0.10
0.016±0.004
(
)
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)
0~8°
0.25
0.010
(
)
#1
#16
0.45 ~0.75
0.018 ~ 0.030
11.76±0.20
0.463±0.008
#32
#17
0.50
0.020
(
)
+0.10
-0.05
+0.004
-0.002
0.15
21.35
0.841
1.00±0.10
0.039±0.004
MAX
0.006
1.20
0.047
20.95±0.10
0.825±0.004
MAX
0.10 MAX
0.004 MAX
1.27
0.050
0.95
0.037
0.05
0.002
0.40±0.10
0.016±0.004
(
)
MIN
Revision 3.0
August 2000
9
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