K7A803600B-QC160 [SAMSUNG]
Cache SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100;型号: | K7A803600B-QC160 |
厂家: | SAMSUNG |
描述: | Cache SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 时钟 静态存储器 内存集成电路 |
文件: | 总19页 (文件大小:416K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
8Mb Sync. Pipelined Burst SRAM
Specification
100 TQFP with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure couldresult in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 5.0 April 2006
- 1 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
Document Title
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
History
Draft Date
Remark
0.0
0.1
0.2
0.3
1.0
Initial draft
May. 18 . 2001
Preliminary
1. Delete pass- through
June. 26. 2001 Preliminary
1. Add x32 org part and industrial temperature part
1. change scan order(1) form 4T to 6T at 119BGA(x18)
Aug. 11. 2001
Aug. 28. 2001
Nov. 16. 2001
Preliminary
Preliminary
Final
1. Final spec release
2. Change ISB2 form 50mA to 60mA
2.0
2.1
3.0
4.0
5.0
Change ordering information( remove 225MHz at SPB)
1. Delete 119BGA package
April. 01. 2002 Final
April. 04. 2003 Final
1. Remove x32 organization
Nov. 17. 2003
Feb. 16. 2006
Apr. 03. 2006
Final
Final
Final
1. Add the overshoot timing
1. Add Pb-free package
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. 5.0 April 2006
- 2 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
8Mb SPB SRAM Ordering Information
Org.
VDD (V)
Speed (ns)
Access Time (ns)
Part Number
RoHS Avail.
K7A801800B-P(Q)1C(I)216
K7A801800B-Q3C(I)14
K7A803600B-P(Q)1C(I)216
K7A803600B-Q3C(I)14
3.3
3.3
3.3
3.3
6.0
7.2
6.0
7.2
3.5
3.8
3.5
3.8
√
512Kx18
•
√
256Kx36
•
Note 1. P(Q) [Package type] : P-Pb Free, Q-Pb
2. C(I) [Operating Temperature] : C-Commercial, I-Industrial
3. Support only Pb package Parts. For Pb-Free package, use faster frequency parts.
Rev. 5.0 April 2006
- 3 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-bit Synchronous Pipelined Burst SRAM
FEATURES
GENERAL DESCRIPTION
• Synchronous Operation.
The K7A803600B and K7A801800B are 9,437,184-bit Syn-
chronous Static Random Access Memory designed for high
performance second level cache of Pentium and Power PC
based System.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O
It is organized as 256K(512K) words of 36(18) bits and inte-
grates address and control registers, a 2-bit burst address
counter and added some new functions for high perfor-
mance cache RAM applications; GW, BW, LBO, ZZ. Write
cycles are internally self-timed and synchronous.
Full bus-width write is done by GW, and each byte write is
performed by the combination of WEx and BW when GW is
high. And with CS1 high, ADSP is blocked to control signals.
Burst cycle can be initiated with either the address status
processor(ADSP) or address status cache controller(ADSC)
inputs. Subsequent burst addresses are generated inter-
nally in the system¢s burst sequence and are controlled by
the burst address advance(ADV) input.
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear
burst.
• Three Chip Enables for simple depth expansion with No Data
Contention only for TQFP ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
LBO pin is DC operated and determines burst sequence(lin-
ear or interleaved).
ZZ pin controls Power Down State and reduces Stand-by
current regardless of CLK.
• 100-TQFP-1420A
• Operating in commeical and industrial temperature range.
FAST ACCESS TIMES
The K7A803600B and K7A801800B are fabricated using
SAMSUNG¢s high performance CMOS technology and is
available in a 100pin TQFP and Multiple power and ground
pins are utilized to minimize ground bounce.
PARAMETER
Symbol
tCYC
tCD
-16 -14 Unit
Cycle Time
6.0
3.5
3.5
7.2
3.8
3.8
ns
ns
ns
Clock Access Time
Output Enable Access Time
tOE
LOGIC BLOCK DIAGRAM
CLK
LBO
256Kx36 , 512Kx18
BURST CONTROL
LOGIC
BURST
MEMORY
ADDRESS
ADV
A′0
~A′1
ARRAY
ADSC
COUNTER
A
0
~A
1
A
~A
or A2
2
~A1178
A
~A
ADDRESS
REGISTER
or A0
0
~A1187
ADSP
DATA-IN
REGISTER
CS
CS
CS
1
2
2
OUTPUT
GW
BW
CONTROL
LOGIC
REGISTER
BUFFER
WEx
(x=a,b,c,d or a,b)
OE
ZZ
DQa0 ~ DQd7 or DQa0 ~ DQb7
DQPa,DQPb
DQPa ~ DQPd
Rev. 5.0 April 2006
- 4 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
PIN CONFIGURATION(TOP VIEW)
DQPb
80
DQPc
1
DQb7
79
DQc0
2
DQb6
78
DQc1
3
VDDQ
77
VDDQ
4
VSSQ
76
VSSQ
5
DQb5
75
DQc2
6
DQb4
74
DQc3
7
DQb3
73
DQc4
8
DQb2
72
DQc5
9
VSSQ
71
VSSQ
10
VDDQ
70
VDDQ
11
DQb1
69
DQc6
12
100 Pin TQFP
DQb0
VSS
DQc7
13
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
N.C.
14
(20mm x 14mm)
N.C.
VDD
15
VDD
ZZ
N.C.
16
VSS
17
DQa7
DQa6
VDDQ
VSSQ
DQa5
DQa4
DQa3
DQa2
VSSQ
VDDQ
DQa1
DQa0
DQPa
DQd0
DQd1
VDDQ
VSSQ
DQd2
DQd3
DQd4
DQd5
VSSQ
VDDQ
DQd6
DQd7
DQPd
18
19
20
21
22
23
24
25
26
27
28
29
30
K7A803600B(256Kx36)
PIN NAME
SYMBOL
PIN NAME
TQFP PIN NO.
SYMBOL
PIN NAME
TQFP PIN NO.
A0 - A17
Address Inputs
32,33,34,35,36,37,43 VDD
44,45,46,47,48,49,50 VSS
Power Supply(+3.3V)
Ground
15,41,65,91
17,40,67,90
81,82,99,100
83
N.C.
No Connect
14,16,38,39,42,66
ADV
ADSP
ADSC
CLK
CS1
CS2
CS2
Burst Address Advance
Address Status Processor 84
Address Status Controller 85
DQa0~a7
DQb0~b7
DQc0~c7
DQd0~d7
DQPa~Pd
Data Inputs/Outputs
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
Clock
89
Chip Select
Chip Select
Chip Select
98
97
92
WEx(x=a,b,c,d) Byte Write Inputs
93,94,95,96
VDDQ
VSSQ
Output Power Supply
(2.5V or 3.3V)
Output Ground
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
OE
Output Enable
86
88
87
64
31
GW
BW
ZZ
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
LBO
Notes : 1. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
2. The pin 42 is reserved for address bit for the 16Mb .
Rev. 5.0 April 2006
- 5 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
PIN CONFIGURATION(TOP VIEW)
A10
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
N.C.
N.C.
1
N.C.
N.C.
VDDQ
VSSQ
N.C.
DQPa
DQa7
DQa6
VSSQ
VDDQ
DQa5
DQa4
VSS
2
N.C.
3
VDDQ
VSSQ
N.C.
4
5
6
N.C.
7
DQb0
DQb1
VSSQ
VDDQ
DQb2
DQb3
N.C.
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
N.C.
VDD
ZZ
VDD
N.C.
VSS
DQb4
DQb5
VDDQ
VSSQ
DQb6
DQb7
DQPb
N.C.
DQa3
DQa2
VDDQ
VSSQ
DQa1
DQa0
N.C.
N.C.
VSSQ
VDDQ
N.C.
N.C.
N.C.
K7A801800B(512Kx18)
VSSQ
VDDQ
N.C.
N.C.
N.C.
PIN NAME
SYMBOL
PIN NAME
TQFP PIN NO.
SYMBOL
PIN NAME
TQFP PIN NO.
A0 - A18
Address Inputs
32,33,34,35,36,37,43 VDD
44,45,46,47,48,49,50 VSS
Power Supply(+3.3V) 15,41,65,91
Ground
17,40,67,90
80,81,82,99,100
83
N.C.
No Connect
1,2,3,6,7,14,16,25,28,29,
30,38,39,42,51,52,53,56,
57,66,75,78,79,95,96
ADV
ADSP
ADSC
CLK
CS1
CS2
CS2
WEx
OE
Burst Address Advance
Address Status Processor 84
Address Status Controller
Clock
85
89
DQa0 ~ a7
DQb0 ~ b7
DQPa, Pb
VDDQ
Data Inputs/Outputs
58,59,62,63,68,69,72,73
8,9,12,13,18,19,22,23
74,24
Chip Select
98
Chip Select
97
Chip Select
92
Output Power Supply 4,11,20,27,54,61,70,77
(2.5V or 3.3V)
Output Ground
Byte Write Inputs
Output Enable
93,94
86
VSSQ
5,10,21,26,55,60,71,76
GW
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
88
BW
87
ZZ
64
LBO
31
Notes : 1. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
2. The pin 42 is reserved for address bit for the 16Mb .
Rev. 5.0 April 2006
- 6 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
FUNCTION DESCRIPTION
The K7A803600B and K7A801800B are synchronous SRAM designed to support the burst address accessing sequence of the
Power PC based microprocessor. All inputs (with the exception of OE, LBO and ZZ) are sampled on rising clock edges. The start and
duration of the burst access is controlled by ADSC, ADSP and ADV and chip select pins.
The accesses are enabled with the chip select signals and output enabled signals. Wait states are inserted into the access with ADV.
When ZZ is pulled high, the SRAM will enter a Power Down State. At this time, internal state of the SRAM is preserved. When ZZ
returns to low, the SRAM normally operates after 2cycles of wake up time. ZZ pin is pulled down internally.
Read cycles are initiated with ADSP(regardless of WEx and ADSC)using the new external address clocked into the on-chip address
register whenever ADSP is sampled low, the chip selects are sampled active, and the output buffer is enabled with OE. In read oper-
ation the data of cell array accessed by the current address, registered in the Data-out registers by the positive edge of CLK, are car-
ried to the Data-out buffer by the next positive edge of CLK. The data, registered in the Data-out buffer, are projected to the output
pins. ADV is ignored on the clock edge that samples ADSP asserted, but is sampled on the subsequent clock edges. The address
increases internally for the next access of the burst when WEx are sampled High and ADV is sampled low. And ADSP is blocked to
control signals by disabling CS1.
All byte write is done by GW(regaedless of BW and WEx.), and each byte write is performed by the combination of BW and WEx
when GW is high.
Write cycles are performed by disabling the output buffers with OE and asserting WEx. WEx are ignored on the clock edge that sam-
ples ADSP low, but are sampled on the subsequent clock edges. The output buffers are disabled when WEx are sampled
Low(regaedless of OE). Data is clocked into the data input register when WEx sampled Low. The address increases internally to the
next address of burst, if both WEx and ADV are sampled Low. Individual byte write cycles are performed by any one or more byte
write enable signals(WEa, WEb, WEc or WEd) sampled low. The WEa control DQa0 ~ DQa7 and DQPa, WEb controls DQb0 ~ DQb7
and DQPb, WEc controls DQc0 ~ DQc7 and DQPc, and WEd control DQd0 ~ DQd7 and DQPd. Read or write cycle may also be initi-
ated with ADSC, instead of ADSP. The differences between cycles initiated with ADSC and ADSP as are follows;
ADSP must be sampled high when ADSC is sampled low to initiate a cycle with ADSC.
WEx are sampled on the same clock edge that sampled ADSC low(and ADSP high).
Addresses are generated for the burst access as shown below, The starting point of the burst sequence is provided by the external
address. The burst address counter wraps around to its initial state upon completion. The burst sequence is determined by the state
of the LBO pin. When this pin is Low, linear burst sequence is selected. When this pin is High, Interleaved burst sequence is
selected.
BURST SEQUENCE TABLE
(Interleaved Burst)
Case 4
Case 1
Case 2
Case 3
LBO PIN
HIGH
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
1
1
0
1
0
1
0
0
1
1
1
0
1
0
1
1
0
0
0
1
0
1
1
1
0
0
1
0
1
0
Fourth Address
TABLE
LBO PIN
(Linear Burst)
Case 1
Case 2
Case 3
Case 4
A0
LOW
A1
A0
A1
A0
A1
A0
A1
First Address
0
0
1
1
0
1
0
1
0
1
1
0
1
0
1
0
1
1
0
0
0
1
0
1
1
0
0
1
1
0
1
0
Fourth Address
Note : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed.
ASYNCHRONOUS TRUTH TABLE
OPERATION
ZZ
H
L
OE
I/O STATUS
High-Z
Notes
1. X means "Don′t Care".
2. ZZ pin is pulled down internally
Sleep Mode
X
L
DQ
3. For write cycles that following read cycles, the output buffers must be
disabled with OE, otherwise data bus contention will occur.
4. Sleep Mode means power down state of which stand-by current does
not depend on cycle time.
Read
L
H
X
High-Z
Write
L
Din, High-Z
High-Z
5. Deselected means power down state of which stand-by current
depends on cycle time.
Deselected
L
X
Rev. 5.0 April 2006
- 7 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
TRUTH TABLES
SYNCHRONOUS TRUTH TABLE
CS1
H
L
CS2
X
L
CS2 ADSP ADSC ADV WRITE CLK
ADDRESS ACCESSED
N/A
OPERATION
Not Selected
X
X
H
X
H
L
X
L
L
X
X
L
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
L
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
N/A
Not Selected
L
X
L
L
N/A
Not Selected
L
X
X
L
N/A
Not Selected
L
X
H
H
H
X
X
X
X
X
X
X
X
L
N/A
Not Selected
L
X
L
External Address
External Address
External Address
Next Address
Next Address
Next Address
Next Address
Current Address
Current Address
Current Address
Current Address
Begin Burst Read Cycle
Begin Burst Write Cycle
Begin Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Write Cycle
Continue Burst Write Cycle
Suspend Burst Read Cycle
Suspend Burst Read Cycle
Suspend Burst Write Cycle
Suspend Burst Write Cycle
L
L
H
H
H
X
H
X
H
X
H
X
L
L
L
H
H
H
L
X
H
X
H
X
H
X
H
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
L
L
L
L
H
H
H
H
H
H
L
L
NOTE : 1. X means "Don′t Care".
2. The rising edge of clock is symbolized by ↑.
3. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
4. Operation finally depends on status of asynchronous input pins(ZZ and OE).
WRITE TRUTH TABLE(x36)
GW
H
BW
H
L
WEa
X
WEb
X
WEc
X
WEd
X
OPERATION
READ
H
H
H
H
H
READ
H
L
L
H
H
H
WRITE BYTE a
WRITE BYTE b
WRITE BYTE c and d
WRITE ALL BYTEs
WRITE ALL BYTEs
H
L
H
L
H
H
H
L
H
H
L
L
H
L
L
L
L
L
L
X
X
X
X
X
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
WRITE TRUTH TABLE(x18)
GW
H
H
BW
H
L
WEa
X
H
WEb
X
H
OPERATION
READ
READ
H
H
H
L
L
L
L
X
L
H
L
X
H
L
L
X
WRITE BYTE a
WRITE BYTE b
WRITE ALL BYTEs
WRITE ALL BYTEs
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
Rev. 5.0 April 2006
- 8 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on VDD Supply Relative to VSS
Voltage on VDDQ Supply Relative to VSS
Voltage on Input Pin Relative to VSS
Voltage on I/O Pin Relative to VSS
Power Dissipation
SYMBOL
VDD
RATING
-0.3 to 4.6
VDD
UNIT
V
VDDQ
VIN
V
-0.3 to VDD+0.3
-0.3 to VDDQ+0.3
1.6
V
VIO
V
PD
W
Storage Temperature
TSTG
TOPR
TOPR
TBIAS
-65 to 150
0 to 70
°C
°C
°C
°C
Commercial
Industrial
Operating Temperature
-40 to 85
-10 to 85
Storage Temperature Range Under Bias
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
VDD
MIN
3.135
3.135
0
Typ.
3.3
3.3
0
MAX
3.465
3.465
0
UNIT
V
V
V
VDDQ
VSS
* The above parameters are also guaranteed at industrial temperature range.
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
VDD
MIN
3.135
2.375
0
Typ.
3.3
2.5
0
MAX
3.465
2.9
UNIT
V
V
V
VDDQ
VSS
0
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
Input Capacitance
SYMBOL
CIN
TEST CONDITION
VIN=0V
MIN
-
-
MAX
5
7
UNIT
pF
Output Capacitance
COUT
VOUT=0V
pF
*Note : Sampled not 100% tested.
Rev. 5.0 April 2006
- 9 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
PARAMETER
SYMBOL
TEST CONDITIONS
VDD = Max ; VIN=VSS to VDD
MIN
MAX
+2
UNIT NOTES
Input Leakage Current(except ZZ)
Output Leakage Current
IIL
-2
-2
-
µA
µA
IOL
Output Disabled, VOUT=VSS to VDDQ
+2
-16
-14
-16
-14
350
300
130
120
Device Selected, IOUT=0mA,
ZZ≤VIL , Cycle Time ≥ tCYC Min
Operating Current
Standby Current
ICC
ISB
mA
mA
1,2
-
-
Device deselected, IOUT=0mA, ZZ≤VIL,
f=Max, All Inputs≤0.2V or ≥ VDD-0.2V
-
Device deselected, IOUT=0mA, ZZ≤0.2V,
f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)
ISB1
ISB2
-
-
100
60
mA
mA
Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
f=Max, All Inputs≤VIL or ≥VIH
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
VOL
VOH
VOL
VOH
VIL
IOL=8.0mA
IOH=-4.0mA
IOL=1.0mA
IOH=-1.0mA
-
0.4
V
V
V
V
V
V
V
V
2.4
-
-
0.4
-
2.0
-0.3*
2.0
-0.3*
1.7
0.8
VIH
VIL
VDD+0.3**
0.7
3
3
VIH
VDD+0.3**
Notes : 1.The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.
Overshoot Timing
Undershoot Timing
20% tCYC(MIN)
VIH
VDDQ+1.0V
VDDQ+0.5V
VDDQ
VSS
VSS-0.5V
VSS-1.0V
20% tCYC(MIN)
VIL
TES=T3.C3VO+0N.1D65ITV/I-O0.1N65SV,V
(VDD
DDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, T
A
=0to70 C)
°
Parameter
Value
0 to 3.0V
0 to 2.5V
1.0V/ns
1.0V/ns
1.5V
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
VDDQ/2
See Fig. 1
* The above parameters are also guaranteed at industrial temperature range.
Rev. 5.0 April 2006
- 10 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
Output Load(A)
Output Load(B),
(for tLZC, tLZOE, tHZOE & tHZC)
+3.3V for 3.3V I/O
RL=50Ω
Dout
/+2.5V for 2.5V I/O
VL=1.5V for 3.3V I/O
319Ω / 1667Ω
VDDQ/2 for 2.5V I/O
30pF*
Dout
Zo=50Ω
353Ω / 1538Ω
5pF*
* Including Scope and Jig Capacitance
Fig. 1
AC TIMING CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
-16
-14
PARAMETER
Symbol
UNIT
MIN
6.0
-
MAX
MIN
7.2
-
MAX
Cycle Time
tCYC
tCD
-
-
ns
ns
Clock Access Time
3.5
3.8
Output Enable to Data Valid
Clock High to Output Low-Z
tOE
-
3.5
-
3.8
ns
tLZC
tOH
0
-
0
-
ns
Output Hold from Clock High
1.5
0
-
1.5
0
-
ns
Output Enable Low to Output Low-Z
Output Enable High to Output High-Z
Clock High to Output High-Z
tLZOE
tHZOE
tHZC
tCH
-
-
ns
-
3.0
-
3.5
ns
1.5
2.3
2.3
1.5
1.5
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.5
0.5
0.5
2
3.0
-
1.5
2.5
2.5
1.5
1.5
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.5
0.5
0.5
2
3.5
-
ns
Clock High Pulse Width
ns
Clock Low Pulse Width
tCL
-
-
ns
Address Setup to Clock High
tAS
-
-
ns
Address Status Setup to Clock High
Data Setup to Clock High
tSS
-
-
ns
tDS
-
-
ns
Write Setup to Clock High (GW, BW, WEX)
Address Advance Setup to Clock High
Chip Select Setup to Clock High
Address Hold from Clock High
Address Status Hold from Clock High
Data Hold from Clock High
tWS
-
-
ns
tADVS
tCSS
tAH
-
-
ns
-
-
ns
-
-
ns
tSH
-
-
ns
tDH
-
-
ns
Write Hold from Clock High (GW, BW, WEX)
Address Advance Hold from Clock High
Chip Select Hold from Clock High
ZZ High to Power Down
tWH
tADVH
tCSH
tPDS
tPUS
-
-
ns
-
-
ns
-
-
ns
-
-
cycle
cycle
ZZ Low to Power Up
2
-
2
-
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. All address inputs must meet the specified setup and hold times for all rising clock edges whenever ADSC and/or ADSP is sampled low and CS
is sampled low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
3. Both chip selects must be active whenever ADSC or ADSP is sampled low in order for the this device to remain enabled.
4. ADSC or ADSP must not be asserted for at least 2 Clock after leaving ZZ state.
Rev. 5.0 April 2006
- 11 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
Rev. 5.0 April 2006
- 12 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
Rev. 5.0 April 2006
- 13 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
Rev. 5.0 April 2006
- 14 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
Rev. 5.0 April 2006
- 15 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
Rev. 5.0 April 2006
- 16 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
APPLICATION INFORMATION
DEPTH EXPANSION
The Samsung 256Kx36 Synchronous Pipelined Burst SRAM has two additional chip selects for simple depth expansion.
This permits easy secondary cache upgrades from 256K depth to 512K depth without extra logic.
I/O[0:71]
Data
Address
A[0:18]
A[18]
A[0:17]
A[18]
A[0:17]
Address Data
Address Data
CS
CS
CLK
CS2
2
2
CS2
256Kx36
SPB
CLK
ADSC
WEx
OE
256Kx36
SPB
CLK
ADSC
WEx
OE
Microprocessor
Address
CLK
SRAM
SRAM
(Bank 0)
(Bank 1)
Cache
Controller
CS1
CS1
ADV ADSP
ADV ADSP
ADS
INTERLEAVE READ TIMING (Refer to non-interleave write timing for interleave write timing)
(ADSP CONTROLLED , ADSC=HIGH)
Clock
tSS
tSH
ADSP
tAS
tAH
A1
A2
ADDRESS
[0:n]
tWS
tWH
WRITE
tCSS
tCSH
CS1
Bank 0 is selected by CS2, and Bank 1 deselected by CS2
An+1
ADV
OE
Bank 0 is deselected by CS2, and Bank 1 selected by CS2
tADVS
tADVH
tOE
tHZC
tLZOE
Data Out
(Bank 0)
Q1-1
Q1-2
Q1-3
Q1-4
tCD
tLZC
Data Out
(Bank 1)
Q2-1
Q2-2
Q2-3
Q2-4
*Notes : n = 14 32K depth ,
15 64K depth
Don′t Care
Undefined
16 128K depth , 17 256K depth
18 512K depth
Rev. 5.0 April 2006
- 17 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
APPLICATION INFORMATION
DEPTH EXPANSION
The Samsung 512Kx18 Synchronous Pipelined Burst SRAM has two additional chip selects for simple depth expansion.
This permits easy secondary cache upgrades from 512K depth to 1M depth without extra logic.
I/O[0:71]
Data
Address
A[0:18]
A[19]
A[0:19]
A[0:18]
A[19]
Address Data
Address Data
CS
CS
CLK
CS2
2
CS2
2
Microprocessor
512Kx18
SPB
CLK
ADSC
WEx
OE
512Kx18
SPB
CLK
ADSC
WEx
OE
Address
CLK
SRAM
SRAM
(Bank 0)
(Bank 1)
Cache
Controller
CS1
CS1
ADV ADSP
ADV ADSP
ADS
INTERLEAVE READ TIMING (Refer to non-interleave write timing for interleave write timing)
(ADSP CONTROLLED , ADSC=HIGH)
Clock
tSS
tSH
ADSP
tAS
tAH
A1
A2
ADDRESS
[0:n]
tWS
tWH
WRITE
tCSS
tCSH
CS1
Bank 0 is selected by CS2, and Bank 1 deselected by CS2
An+1
ADV
OE
Bank 0 is deselected by CS2, and Bank 1 selected by CS2
tADVS
tADVH
tOE
tHZC
tLZOE
Data Out
(Bank 0)
Q1-1
Q1-2
Q1-3
Q1-4
tCD
tLZC
Data Out
(Bank 1)
Q2-1
Q2-2
Q2-3
Q2-4
*Notes : n = 14 32K depth ,
15 64K depth
Undefined
Don′t Care
16 128K depth , 17 256K depth
18 512K depth , 19 1M depth
Rev. 5.0 April 2006
- 18 -
K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
PACKAGE DIMENSIONS
Units ; millimeters/Inches
100-TQFP-1420A
22.00
20.00
±
0.30
0.20
0~8°
+ 0.10
- 0.05
±
0.127
16.00
14.00
±
0.30
0.10 MAX
±
0.20
(0.83)
0.50 ±0.10
#1
0.65
(0.58)
0.30
±0.10
0.10 MAX
1.40
±0.10
1.60 MAX
0.05 MIN
0.50 ±0.10
Rev. 5.0 April 2006
- 19 -
相关型号:
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