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K7I161882B [SAMSUNG]

512Kx36 & 1Mx18 DDRII CIO b2 SRAM; 512Kx36及1Mx18 CIO DDRII SRAM B2
K7I161882B
型号： K7I161882B
厂家： SAMSUNG    SAMSUNG
描述：

512Kx36 & 1Mx18 DDRII CIO b2 SRAM
512Kx36及1Mx18 CIO DDRII SRAM B2

静态存储器 双倍数据速率
文件： 总18页 (文件大小：412K)
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相关型号：

K7I161882B-EC160

 DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

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SAMSUNG

K7I161882B-EC16T

 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

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K7I161882B-EC20T

 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

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SAMSUNG

K7I161882B-EC250

 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

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SAMSUNG

K7I161882B-EC25T

 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

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K7I161882B-EC300

 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

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SAMSUNG

K7I161882B-EC30T

 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

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SAMSUNG

K7I161882B-EI16T

 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

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K7I161882B-EI20T

 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

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K7I161882B-EI250

 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

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K7I161882B-EI25T

 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

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SAMSUNG

K7I161882B-EI300

 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

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SAMSUNG

K7I161882B-FC16

 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

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SAMSUNG

K7I161882B-FC160

 DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

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K7I161882B-FC16T

 DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

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K7I161882B-FC20

 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

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SAMSUNG

K7I161882B-FC200

 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

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SAMSUNG

K7I161882B-FC20T

 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

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SAMSUNG

K7I161882B-FC25

 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

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K7I161882B-FC30

 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

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SAMSUNG
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