K7J643682M-FI300
更新时间:2024-10-30 03:09:41
品牌:SAMSUNG
描述:DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
K7J643682M-FI300 概述
DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
K7J643682M-FI300 数据手册
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PDF下载K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
72Mb DDRII SRAM Specification
165 FBGA with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 March 2007
- 1 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
Document Title
2Mx36-bit, 4Mx18-bit DDR II SIO b2 SRAM
Revision History
Draft Date
Remark
Advance
Preliminary
Rev. No.
History
Mar. 9, 2003
Mar. 20, 2003
0.0
1. Initial document.
0.1
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
Preliminary
Preliminary
Preliminary
Final
Aug. 16, 2004
Oct. 18, 2004
May. 17, 2005
Aug. 2, 2005
Jul. 6, 2006
0.2
0.3
0.4
1.0
1.1
1. Add the Power-on Sequence specification
1. Correct the pin name table
1. Update the power consumption (Icc & Isb)
1. Finalize the datasheet
Final
1. Add Pb-free comment
2. Change the Max. clock cycle time in AC TIMING CHARACTERIS-
TICS
Final
Final
Jan. 23, 2007
Mar. 5, 2007
1.2
1.3
1. Correct the pin name table
1. Add Detail Specification of Power up Sequence
Rev. 1.3 March 2007
- 2 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
2Mx36-bit, 4Mx18-bit DDR II SIO b2 SRAM
FEATURES
• 1.8V+0.1V/-0.1V Power Supply.
Part
Cycle Access
RoHS
Avail.
Org.
Unit
• DLL circuitry for wide output data valid window and future fre-
quency scaling.
Number
Time
Time
K7J643682M-F(E)C(I)30 3.3
K7J643682M-F(E)C(I)25 4.0
0.45
0.45
0.45
0.50
0.45
0.45
0.45
0.50
ns
ns
ns
ns
ns
ns
ns
ns
√
√
•
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/
-0.1V for 1.8V I/O.
X36
X18
• Separate independent read and write data ports
• HSTL I/O
K7J643682M-FC(I)20
K7J643682M-FC(I)16
5.0
6.0
• Synchronous pipeline read with self timed late write.
• Registered address, control and data input/output.
• Full data coherency, providing most current data.
• DDR (Double Data Rate) Interface on read and write ports.
• Fixed 2-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks (K and K) for accurate DDR timing at clock
rising edges only.
•
K7J641882M-F(E)C(I)30 3.3
K7J641882M-F(E)C(I)25 4.0
√
√
•
K7J641882M-FC(I)20
K7J641882M-FC(I)16
5.0
6.0
•
* -F(E)C(I)
F(E) [Package type]: E-Pb Free, F-Pb
C(I) [Operating Temperature]: C-Commercial, I-Industrial
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches.
• Two echo clocks (CQ and CQ) to enhance output data
traceability.
• Single address bus.
• Byte write function.
• Simple depth expansion with no data contention.
• Programmable output impedance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball array FBGA) with body size of 15x17mm
& Lead Free
FUNCTIONAL BLOCK DIAGRAM
36 (or 18)
DATA
REG
D (Data in)
36 (or 18)
WRITE DRIVER
20
20 (or 21)
ADD
REG
(or 21)
ADDRESS
R/W
LD
BWX
36
36
72
2Mx36
(4Mx18)
MEMORY
ARRAY
(or 18)
(or 18)
(or 36)
CTRL
Q (Data Out)
LOGIC
4(or 2)
CQ, CQ
(Echo Clock out)
K
K
CLK
GEN
C
C
SELECT OUTPUT CONTROL
Notes: 1. Numbers in ( ) are for x18 device.
DDR II SRAM and Double Data Rate II comprise a new family of products developed by Cypress, Renesas, IDT, NEC and Samsung technology.
Rev. 1.3 March 2007
- 3 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
PIN CONFIGURATIONS(TOP VIEW) K7J643682M(2Mx36)
1
CQ
2
NC/SA*
Q18
Q28
D20
D29
Q21
D22
VREF
Q31
D32
Q24
Q34
D26
D35
TCK
3
4
5
6
7
8
9
10
NC/SA*
Q17
Q7
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
SA
R/W
SA
VSS
BW2
BW3
SA
K
K
BW1
BW0
SA
LD
SA
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
SA
Q27
D27
D28
Q29
Q30
D30
Doff
D31
Q32
Q33
D33
D34
Q35
TDO
D18
D19
Q19
Q20
D21
Q22
VDDQ
D23
Q23
D24
D25
Q25
Q26
SA
D17
D16
Q16
Q15
D14
Q13
VDDQ
D12
Q12
D11
D10
Q10
Q9
SA
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
SA
C
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
SA
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
SA
D15
D6
Q14
D13
VREF
Q4
D3
Q11
Q1
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VSS
VSS
SA
D9
D0
SA
SA
SA
SA
SA
C
SA
SA
SA
TMS
Notes : 1. * Checked No Connect(NC) pins are reserved for higher density address, i.e. 10A for 144Mb and 2A for 288Mb.
2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35.
PIN NAME
SYMBOL
PIN NUMBERS
DESCRIPTION
Input Clock
Input Clock for Output Data
Output Echo Clock
DLL Disable when low
Address Inputs
NOTE
K, K
C, C
CQ, CQ
Doff
6B, 6A
6P, 6R
11A, 1A
1H
1
SA
3A,9A,4B,8B,5C-7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R
10P,11N,11M,10K,11J,11G,10E,11D,11C,10N,9M,9L
9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N
1C,1D,2E,1G,1J,2K,1M,1N,2P
D0-35
Q0-35
Data Inputs
11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L
9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3G,3K,2L,3N
3P,1B,2C,1E,1F,2J,1K,1L,2M,1P
Data Outputs
Read, Write Control Pin, Read active
when high
R/W
LD
4A
8A
Synchronous Load Pin, bus Cycle
sequence is to be defined when low
BW0, BW1,BW2, BW3
7B,7A,5A,5B
2H,10H
11H
Block Write Control Pin,active when low
Input Reference Voltage
Output Driver Impedance Control Input
Power Supply ( 1.8 V )
VREF
ZQ
VDD
2
5F,7F,5G,7G,5H,7H,5J,7J,5K,7K
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
VDDQ
Output Power Supply ( 1.5V or 1.8V )
10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M,
8M,4N,8N
VSS
Ground
TMS
TDI
TCK
TDO
NC
10R
11R
2R
1R
2A,10A
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Clock
JTAG Test Data Output
No Connect
3
Notes: 1. C, C, K or K cannot be set to VREF voltage.
2. When ZQ pin is directly connected to VDD output impedance is set to minimum value and it cannot be connected to ground or left unconnected
3. Not connected to chip pad internally.
.
Rev. 1.3 March 2007
- 4 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
PIN CONFIGURATIONS(TOP VIEW) K7J641882M(4Mx18)
1
2
NC/SA*
Q9
NC
D11
NC
Q12
D13
VREF
NC
NC
Q15
NC
3
SA
D9
4
R/W
SA
VSS
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
5
BW1
NC
6
K
K
7
NC
BW0
SA
8
LD
SA
VSS
9
SA
10
SA
NC
Q7
NC
D6
NC
NC
VREF
Q4
D3
NC
Q1
NC
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
NC
NC
NC
NC
NC
NC
VDDQ
NC
NC
NC
NC
NC
NC
SA
D10
Q10
Q11
D12
Q13
VDDQ
D14
Q14
D15
D16
Q16
Q17
SA
SA
SA
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
SA
C
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
SA
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
SA
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
D17
NC
TCK
VSS
SA
SA
VSS
SA
SA
SA
SA
SA
SA
C
Notes: 1. * Checked No Connect (NC) pins are reserved for higher density address, i.e. 2A for 144Mb.
2. BW0 controls write to D0:D8 and BW1 controls write to D9:D17.
PIN NAME
SYMBOL
K, K
PIN NUMBERS
DESCRIPTION
Input Clock
NOTE
6B, 6A
C, C
CQ, CQ
Doff
6P, 6R
11A, 1A
1H
Input Clock for Output Data
Output Echo Clock
DLL Disable when low
Address Inputs
1
SA
3A,9A,10A,4B,8B,5C-7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R
10P,11N,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D,
3F,2G,3J,3L,3M,2N
D0-17
Q0-17
R/W
Data Inputs
11P,10M,11L,11K,10J,11F,11E,10C,11B,2B,3D,3E,
2F,3G,3K,2L,3N,3P
Data Outputs
Read, Write Control Pin, Read active
when high
4A
8A
Synchronous Load Pin, bus Cycle
sequence is to be defined when low
LD
BW0, BW1
VREF
7B, 5A
2H,10H
11H
Block Write Control Pin, active when low
Input Reference Voltage
Output Driver Impedance Control Input
Power Supply (1.8 V)
ZQ
VDD
2
5F,7F,5G,7G,5H,7H,5J,7J,5K,7K
VDDQ
VSS
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
Output Power Supply (1.5V or 1.8V)
Ground
4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M-8M,4N,8N
TMS
TDI
TCK
TDO
10R
11R
2R
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Clock
1R
JTAG Test Data Output
2A,7A,1B,5B,9B,10B,1C,2C,9C,1D,9D,10D,1E,2E,9E,1F,9F,
10F,1G,9G,10G,1J,2J,9J,1K,2K,9K,1L,9L,10L,1M,2M,
9M,1N,9N,10N,1P,2P,9P
NC
No Connect
3
Notes: 1. C, C, K or K cannot be set to VREF voltage.
2. When ZQ pin is directly connected to VDD output impedance is set to minimum value and it cannot be connected to ground or left unconnected
3. Not connected to chip pad internally.
.
Rev. 1.3 March 2007
- 5 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
GENERAL DESCRIPTION
The K7J643682M and K7J641882M are 75,497,472-bits DDR Separate I/O Synchronous Pipelined Burst SRAMs.
They are organized as 2,097,152 words by 36bits for K7J643682M and 4,194,304 words by 18 bits for K7J641882M.
The DDR SIO operation is possible by supporting DDR read and write operations through separate data output and input ports.
Memory bandwidth is higher than DDR SRAM without separate input output as separate read
and write ports eliminate bus turn around cycle.
Address, data inputs, and all control signals are synchronized to the input clock (K or K).
Normally data outputs are synchronized to output clocks (C and C), but when C and C are tied high,
the data outputs are synchronized to the input clocks (K and K).
Read data are referenced to echo clock (CQ or CQ) outputs.
Read address and write address are registered on rising edges of the input K clocks.
Common address bus is used to access address both for read and write operations.
The internal burst counter is fixed to 2-bit sequential for both read and write operations.
Synchronous pipeline read and late write enable high speed operations.
Simple depth expansion is accomplished by using LD for port selection.
Byte write operation is supported with BW0 and BW1 (BW2 and BW3) pins for x18 (x36) device.
IEEE 1149.1 serial boundary scan (JTAG) simplifies monitoring package pads attachment status with system.
The K7J643682M and K7J641882M are implemented with SAMSUNG's high performance 6T CMOS technology
and is available in 165pin FBGA packages. Multiple power and ground pins minimize ground bounce.
Read Operations
Read cycles are initiated by initiating R/W as high at the rising edge of the positive input clock K.
Address is presented and stored in the read address register synchronized with K clock.
For 2-bit burst DDR operation, it will access two 36-bit or 18-bit data words with each read command.
The first pipelined data is transferred out of the device triggered by C clock following next K clock rising edge.
Next burst data is triggered by the rising edge of following C clock rising edge.
Continuous read operations are initiated with K clock rising edge.
And pipelined data are transferred out of device on every rising edge of both C and C clocks.
In case C and C tied to high, output data are triggered by K and K instead of C and C.
When the LD is disabled after a read operation, the K7J643682M and K7J641882M will first complete
burst read operation before entering into deselect mode at the next K clock rising edge.
Then output drivers disabled automatically to high impedance state.
Write Operations
Write cycles are initiated by activating R/W as low at the rising edge of the positive input clock K.
Address is presented and stored in the write address register synchronized with next K clock.
For 2-bit burst DDR operation, it will write two 36-bit or 18-bit data words with each write command.
The first "late writed" data is transferred and registered in to the device synchronous with next K clock rising edge.
Next burst data is transferred and registered synchronous with following K clock rising edge.
Continuous write operations are initiated with K rising edge.
And "late writed" data is presented to the device on every rising edge of both K and K clocks.
When the LD is disabled, the K7J643682M and K7J641882M will enter into deselect mode.
The device disregards input data presented on the same cycle W disabled.
The K7J643682M and K7J641882M support byte write operations.
With activating BW0 or BW1 (BW2 or BW3) in write cycle, only one byte of input data is presented.
In K7J641882M, BW0 controls write operation to D0:D8, BW1 controls write operation to D9:D17.
And in K7J643682M BW2 controls write operation to D18:D26, BW3 controls write operation to D27:D35.
Rev. 1.3 March 2007
- 6 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
Single Clock Mode
K7J643682M and K7J641882M can be operated with the single clock pair K and K, instead of C or C for output clocks.
To operate these devices in single clock mode, C and C must be tied high during power up
and must be maintained high during operation.
After power up, this device can′t change to or from single clock mode.
System flight time and clock skew could not be compensated in this mode.
Depth Expansion
Separate input and output ports enables easy depth expansion.
Each port can be selected and deselected independently and read and write operation do not affect each other.
Before chip deselected, all read and write pending operations are completed.
Programmable Impedance Output Buffer Operation
The designer can program the SRAM's output buffer impedance by terminating the ZQ pin to VSS through a precision resistor (RQ).
The value of RQ (within 15%) is five times the output impedance desired.
For example, 250Ω resistor will give an output impedance of 50Ω.
Impedance updates occur early in cycles that do not activate the outputs, such as deselect cycles.
In all cases impedance updates are transparent to the user and do not produce access time "push-outs" or other anomalous
behavior in the SRAM.
There are no power up requirements for the SRAM. However, to guarantee optimum output driver impedance after power up, the
SRAM needs 1024 non-read cycles.
Echo clock operation
To assure the output traceability, the SRAM provides the output Echo clock, pair of compliment clock CQ and CQ,
which are synchronized with internal data output.
Echo clocks run free during normal operation.
The Echo clock is triggered by internal output clock signal, and transferred to external through same structures as output driver.
Clock Consideration
K7J643682M and K7J641882M utilizes internal DLL(Delay-Locked Loops) for maximum output data valid window.
It can be placed into a stopped-clock state to minimize power with a modest restart time of 1024 clock cycles.
Circuitry automatically resets the DLL when absence of input clock is detected.
Power-Up/Power-Down Supply Voltage Sequencing
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied
simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage
removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ
does not exceed VDD by more than 0.5V during power-down.
Rev. 1.3 March 2007
- 7 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
Detail Specification of Power-Up Sequence in DDRII SRAM
DDRII SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.
• Power-Up Sequence
1. Apply power and keep Doff at low state (All other inputs may be undefined)
- Apply VDD before VDDQ
- Apply VDDQ before VREF or the same time with VREF
2. Just after the stable power and clock(K,K), take Doff to be high.
3. The additional 2048 cycles of clock input is required to lock the DLL after enabling DLL
* Notes: If you want to tie up the Doff pin to High with unstable clock, then you must stop the clock for a few seconds
(Min. 30ns) to reset the DLL after it become a stable clock status.
• DLL Constraints
1. DLL uses either K clock as its synchronizing input, the input should have low phase jitter which is specified as TK var.
2. The lower end of the frequency at which the DLL can operate is 120MHz.
3. If the incoming clock is unstable and the DLL is enabled, then the DLL may lock onto a wrong frequency
and this may cause the failure in the initial stage.
Power up & Initialization Sequence (Doff pin controlled)
K,K
1024 cycle
Unstable
Any
Power-Up
DLL Locking Range
Inputs Clock
Status
CLKstage
Command
must be stable
V
DD
V
DDQ
V
REF
Doff
Power up & Initialization Sequence (Doff pin Fixed high, Clock controlled)
K,K
Min 30ns
1024 cycle
Unstable
Any
Stop Clock
Power-Up
DLL Locking Range
Inputs Clock
Status
CLKstage
Command
must be stable
V
DD
V
DDQ
V
REF
* Notes: When the operating frequency is changed, DLL reset should be required again.
After DLL reset again, the minimum 2048 cycles of clock input is needed to lock the DLL.
Rev. 1.3 March 2007
- 8 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
TRUTH TABLES
SYNCHRONOUS TRUTH TABLE
D
Q
K
LD
R/W
OPERATION
D(A0)
D(A1)
Q(A0)
Previous state
High-Z
Q(A1)
Previous state
High-Z
Stopped
X
H
L
X
X
H
L
Previous state
Previous state
Clock Stop
No Operation
Read
↑
↑
↑
X
X
X
X
DOUT at C(t+1)
High-Z
DOUT at C(t+2)
High-Z
L
Din at K(t+1)
Din at K(t+1)
Write
Notes: 1. X means "Don′t Care".
2. The rising edge of clock is symbolized by ( ↑ ).
3. Before enter into clock stop status, all pending read and write operations will be completed.
WRITE TRUTH TABLE(x18)
K
K
↑
↑
↑
↑
BW0
L
BW1
L
OPERATION
↑
WRITE ALL BYTEs ( K↑ )
WRITE ALL BYTEs ( K↑ )
WRITE BYTE 0 ( K↑ )
WRITE BYTE 0 ( K↑ )
WRITE BYTE 1 ( K↑ )
WRITE BYTE 1 ( K↑ )
WRITE NOTHING ( K↑ )
WRITE NOTHING ( K↑ )
L
L
↑
↑
↑
L
H
L
H
H
L
H
L
H
H
H
H
Notes: 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of input clock K or K ( ↑ ).
3. Assumes a WRITE cycle was initiated.
4. This table illustates operation for x18 devices.
WRITE TRUTH TABLE(x36)
K
K
↑
↑
↑
↑
↑
BW0
L
BW1
L
BW2
L
BW3
L
OPERATION
↑
WRITE ALL BYTEs (K↑ )
WRITE ALL BYTEs (K↑ )
WRITE BYTE 0 (K↑ )
WRITE BYTE 0 (K↑ )
WRITE BYTE 1 (K↑ )
WRITE BYTE 1 (K↑ )
L
L
L
L
↑
↑
↑
↑
L
H
H
L
H
H
H
H
L
H
H
H
H
L
L
H
H
H
H
H
H
L
H
H
H
H
WRITE BYTE 2 and BYTE 3 (K↑ )
WRITE BYTE 2 and BYTE 3 (K↑ )
WRITE NOTHING (K↑ )
L
L
H
H
H
H
WRITE NOTHING (K↑ )
Notes: 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of input clock K or K (↑ ).
3. Assumes a WRITE cycle was initiated.
Rev. 1.3 March 2007
- 9 -
K7J643682M
K7J641882M
ABSOLUTE MAXIMUM RATINGS*
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
PARAMETER
Voltage on VDD Supply Relative to VSS
Voltage on VDDQ Supply Relative to VSS
Voltage on Input Pin Relative to VSS
Storage Temperature
SYMBOL
VDD
RATING
-0.5 to 2.9
UNIT
V
VDDQ
VIN
-0.5 to VDD
V
-0.5 to VDD+0.3
-65 to 150
V
TSTG
TOPR
TBIAS
°C
°C
°C
Operating Temperature (Commercial / Industrial)
Storage Temperature Range Under Bias
0 to 70 / -40 to 85
-10 to 85
*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VDDQ must not exceed VDD during normal operation.
OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Reference Voltage
SYMBOL
VDD
MIN
1.7
MAX
1.9
UNIT
V
V
V
VDDQ
1.4
1.9
VREF
0.68
0.95
DC ELECTRICAL CHARACTERISTICS(VDD=1.8V ±0.1V, TA=0°C to +70°C)
PARAMETER
Input Leakage Current
Output Leakage Current
SYMBOL
TEST CONDITIONS
VDD=Max; VIN=VSS to VDDQ
Output Disabled,
MIN
MAX
+2
UNIT NOTES
IIL
-2
-2
-
µA
µA
IOL
+2
-30
-25
-20
-16
-30
-25
-20
-16
-30
-25
-20
-16
900
800
700
650
850
750
650
600
400
380
360
340
-
VDD=Max, IOUT=0mA
Cycle Time ≥ tKHKH Min
Operating Current (x36):
QDR mode
ICC
ICC
mA
mA
mA
1,4
1,4
1,5
-
-
-
-
-
-
-
-
-
VDD=Max, IOUT=0mA
Cycle Time ≥ tKHKH Min
Operating Current (x18):
QDR mode
Device deselected, IOUT=0mA,
f=Max,
All Inputs≤0.2V or ≥ VDD-0.2V
Standby Current (NOP):
QDR mode
ISB1
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Input Low Voltage
Input High Voltage
VOH1
VOL1
VOH2
VOL2
VIL
VDDQ/2-0.12 VDDQ/2+0.12
VDDQ/2-0.12 VDDQ/2+0.12
V
V
V
V
V
V
2,6
2,6
3
IOH=-1.0mA
IOL=1.0mA
VDDQ-0.2
VSS
VDDQ
0.2
3
-0.3
VREF-0.1
VDDQ+0.3
7,8
7,9
VIH
VREF+0.1
Notes: 1. Minimum cycle. IOUT=0mA.
2. |IOH|=(VDDQ/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω. |IOL|=(VDDQ/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω.
3. Minimum Impedance Mode when ZQ pin is connected to VDDQ.
4. Operating current is calculated with 50% read cycles and 50% write cycles.
5. Standby Current is only after all pending read and write burst operations are completed.
6. Programmable Impedance Mode.
7. These are DC test criteria. DC design criteria is VREF±50mV. The AC VIH/VIL levels are defined separately for measuring timing parameters.
8. VIL (Min.) DC=-0.3V, VIL (Min.) AC=-1.5V(pulse width ≤ 3ns).
9. VIH (Max)DC=VDDQ+0.3, VIH (Max)AC=VDDQ+0.85V(pulse width ≤ 3ns).
Rev. 1.3 March 2007
- 10 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
AC ELECTRICAL CHARACTERISTICS (VDD=1.8V ±0.1V, TA=0°C to +70°C)
PARAMETER
Input High Voltage
Input Low Voltage
SYMBOL
VIH (AC)
VIL (AC)
MIN
MAX
-
UNIT
V
NOTES
1,2
VREF + 0.2
-
VREF - 0.2
V
1,2
Notes: 1. This condition is for AC function test only, not for AC parameter test.
2. To maintain a valid level, the transition edge of the input must:
a) Sustain a constant slew rate from the current AC level through the target AC level, VIL(AC) or VIH(AC)
b) Reach at least the target AC level
c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC)
AC TIMING CHARACTERISTICS(VDD=1.8V±0.1V, TA=0°C to +70°C)
-30
-25
-20
-16
PARAMETER
SYMBOL
UNIT NOTE
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
Clock
Clock Cycle Time (K, K, C, C)
Clock Phase Jitter (K, K, C, C)
Clock High Time (K, K, C, C)
Clock Low Time (K, K, C, C)
Clock to Clock (K↑ → K↑, C↑ → C↑)
Clock to data clock (K↑ → C↑, K↑→ C↑)
DLL Lock Time (K, C)
tKHKH
tKC var
tKHKL
3.30
8.40
0.20
4.00
8.40
0.20
5.00
8.40
0.20
6.00
8.40
0.20
ns
ns
ns
5
6
1.32
1.32
1.49
0.00
1024
30
1.60
1.60
1.80
0.00
1024
30
2.00
2.00
2.20
0.00
1024
30
2.40
2.40
2.70
0.00
1024
30
tKLKH
ns
tKHKH
tKHCH
tKC lock
tKC reset
ns
1.45
1.80
2.30
2.80
ns
cycle
ns
K Static to DLL reset
Output Times
C, C High to Output Valid
C, C High to Output Hold
C, C High to Echo Clock Valid
C, C High to Echo Clock Hold
CQ, CQ High to Output Valid
CQ, CQ High to Output Hold
C, High to Output High-Z
C, High to Output Low-Z
Setup Times
tCHQV
tCHQX
0.45
0.45
0.27
0.45
0.45
0.45
0.30
0.45
0.45
0.45
0.35
0.45
0.50
0.50
0.40
0.50
ns
ns
ns
ns
ns
ns
ns
ns
3
3
-0.45
-0.45
-0.27
-0.45
-0.45
-0.45
-0.30
-0.45
-0.45
-0.45
-0.35
-0.45
-0.50
-0.50
-0.40
-0.50
tCHCQV
tCHCQX
tCQHQV
tCQHQX
tCHQZ
7
7
3
3
tCHQX1
Address valid to K rising edge
Control inputs valid to K rising edge
Data-in valid to K, K rising edge
Hold Times
tAVKH
tIVKH
0.40
0.40
0.30
0.50
0.50
0.35
0.60
0.60
0.40
0.70
0.70
0.50
ns
ns
ns
2
tDVKH
K rising edge to address hold
K rising edge to control inputs hold
K, K rising edge to data-in hold
tKHAX
tKHIX
0.40
0.40
0.30
0.50
0.50
0.35
0.60
0.60
0.40
0.70
0.70
0.50
ns
ns
ns
tKHDX
Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges.
2. Control singles are R, W,BW0,BW1 and BW2, BW3, also for x36
3. If C,C are tied high, K,K become the references for C,C timing parameters.
4. To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ.
The specs as shown do not imply bus contention because tCHQX1 is a MIN parameter that is worst case at totally different test conditions
(0°C, 1.9V) than tCHQZ, which is a MAX parameter (worst case at 70°C, 1.7V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
6. Vdd slew rate must be less than 0.1V DC per 50ns for DLL lock retention. DLL lock time begins once VDD and input clock are stable.
7. Echo clock is very tightly controlled to data valid/data hold. By design, there is a ± 0.1ns variation from echo clock to data.
The data sheet parameters reflect tester guard bands and test setup variations.
Rev. 1.3 March 2007
- 11 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
THERMAL RESISTANCE
PRMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
TYP
21
Unit
°C/W
°C/W
NOTES
θJC
2.48
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
thermal impedance. TJ=TA + PD x θJA
PIN CAPACITANCE
PRMETER
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
SYMBOL
CIN
TESTCONDITION
Typ
3.5
4
MAX
Unit
pF
NOTES
VIN=0V
VOUT=0V
-
4
5
4
COUT
pF
CCLK
3
pF
Note: 1. Parameters are tested with RQ=250Ω and VDDQ=1.5V.
2. Periodically sampled and not 100% tested.
AC TEST CONDITIONS
AC TEST OUTPUT LOAD
Parameter
Sym-
VDD
Value
1.7~1.9
1.4~1.9
1.25/0.25
0.75
Unit
V
0.75V
Core Power Supply Voltage
Output Power Supply Voltage
Input High/Low Level
VREF
VDDQ/2
VDDQ
VIH/
V
50Ω
V
SRAM
Zo=50Ω
Input Reference Level
VREF
TR/TF
V
250Ω
Input Rise/Fall Time
0.3/0.3
VDDQ/2
ns
V
ZQ
Output Timing Reference Level
Note: Parameters are tested with RQ=250Ω
Overershoot Timing
Undershoot Timing
20% tKHKH(MIN)
VIH
VDDQ+0.5V
VDDQ+0.25V
VDDQ
VSS
VSS-0.25V
VSS-0.5V
20% tKHKH(MIN)
VIL
Note: For power-up, VIH ≤ VDDQ+0.3V and VDD ≤ 1.7V and VDDQ ≤ 1.4V t ≤ 200ms
Rev. 1.3 March 2007
- 12 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
APPLICATION INRORMATION
R=250Ω
R=250Ω
ZQ
ZQ
SRAM#1
SRAM#4
CQ
CQ
Q
CQ
CQ
Q
Vt
D
D
SA
R
SA
R W BW0 BW1 C C K K
RW BW0 BW1 C C K K
Data In
Vt
Vt
Data Out
Address
R
R
W
BW
MEMORY
CONTROLLER
Return CLK
Vt
Source CLK
Return CLK
Source CLK
Vt
R=50Ω Vt=VREF
SRAM1 Input CQ
SRAM1 Input CQ
SRAM4 Input CQ
SRAM4 Input CQ
Rev. 1.3 March 2007
- 13 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
TIMING WAVE FORMS OF READ,WRITE AND NOP
NOP
READ
READ
WRITE
WRITE
READ
NOP
NOP
(burst of 2)
(burst of 2)
(burst of 2)
(burst of 2)
(burst of 2)
1
2
3
4
5
6
7
8
K
tKHKL tKLKH
tKHKH
tKHKH
K
LD
R/W
A
tIVKH
tKHIX
A1
A2
A3
A4
A5
tAVKH
tKHAX
tKHDX
tDVKH
tKHDX
tDVKH
D3-1 D3-2 D4-1 D4-2
D
Qxx
Q1-1 Q1-2
tCHQV
Q2-1 Q2-2
Q5-1 Q5-2
Q
tKHCH
tCHQV
tCQHQV
tCHQX
tCHQZ
tKHCH
tCHQX1
tCHQX
C
tKHKL tKLKH
tKHKH
tKHKH
C
tCHCQV
tCHCQX
CQ
CQ
tCHCQV
tCHCQX
Note: 1. Q1-1 refers to output from address A1+0, Q1-2 refers to output from address A1+1 i.e. the next internal burst address following A1+0.
2. Outputs are disabled one cycle after a NOP.
3. D3-1 refers to input to address A3+0, D3-2 refers to input to address A3+1, i.e the next internal burst address following A3+0.
4. If address A4=A5, data Q5-1=D4-1, data Q5-2=D4-2.
Write data is forwarded immediately as read results.
Rev. 1.3 March 2007
- 14 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG
This part contains an IEEE standard 1149.1 Compatible Test Access Port (TAP). The package pads are monitored by the Serial Scan
circuitry when in test mode. This is to support connectivity testing during manufacturing and system diagnostics. Internal data is not
driven out of the SRAM under JTAG control. In conformance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Reg-
ister, Bypass Register and ID register. The TAP controller has a standard 16-state machine that resets internally upon power-up,
therefore, TRST signal is not required. It is possible to use this device without utilizing the TAP. To disable the TAP controller without
interfacing with normal operation of the SRAM, TCK must be tied to VSS to preclude mid level input. TMS and TDI are designed so an
undriven input will produce a response identical to the application of a logic 1, and may be left unconnected. But they may also be
tied to VDD through a resistor. TDO should be left unconnected.
JTAG Block Diagram
JTAG Instruction Coding
IR2 IR1 IR0 Instruction
TDO Output
Notes
0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
EXTEST
IDCODE
SAMPLE-Z
Boundary Scan Register
Identification Register
Boundary Scan Register
1
3
2
6
5
6
6
4
0
0
0
RESERVED Do Not Use
A,D
K,K
C,C
1
SAMPLE
Boundary Scan Register
1
RESERVED Do Not Use
RESERVED Do Not Use
SRAM
CORE
1
1
Q
CQ
BYPASS
Bypass Register
CQ
NOTE :
1. Places DQs in Hi-Z in order to sample all input data regardless of other
SRAM inputs. This instruction is not IEEE 1149.1 compliant.
TDI
BYPASS Reg.
Identification Reg.
Instruction Reg.
2. Places DQs in Hi-Z in order to sample all input data regardless of other
SRAM inputs.
TDO
3. TDI is sampled as an input to the first ID register to allow for the serial shift
of the external TDI data.
4. Bypass register is initiated to VSS when BYPASS instruction is invoked. The
Bypass Register also holds serially loaded TDI when exiting the Shift DR
states.
5. SAMPLE instruction dose not places DQs in Hi-Z.
6. This instruction is reserved for future use.
Control Signals
TAP Controller
TMS
TCK
TAP Controller State Diagram
1
0
Test Logic Reset
0
1
1
0
1
Run Test Idle
Select DR
0
Capture DR
0
Shift DR
1
Exit1 DR
0
Select IR
0
1
1
1
1
Capture IR
0
0
Shift IR
1
Exit1 IR
0
0
0
0
0
Pause DR
1
Pause IR
1
Exit2 IR
1
Exit2 DR
1
1
0
Update DR
0
Update IR
1
Rev. 1.3 March 2007
- 15 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
SCAN REGISTER DEFINITION
Part
Instruction Register
Bypass Register
ID Register
32 bits
32 bits
Boundary Scan
109 bits
2Mx36
4Mx18
3 bits
3 bits
1 bit
1 bit
109 bits
ID REGISTER DEFINITION
Revision Number
Part Configuration
(28:12)
00def0wx0t0q0b0s0
Samsung JEDEC Code
(11: 1)
Part
Start Bit(0)
(31:29)
000
2Mx36
4Mx18
00001001110
00001001110
1
1
000
00def0wx0t0q0b0s0
Note : Part Configuration
/def=011 for 72Mb, /wx=11 for x36, 10 for x18.
/t=1 for DLL Ver., 0 for non-DLL Ver. /q=1 for QDR, 0 for DDR /b=1 for 4Bit Burst, 0 for 2Bit Burst /s=1 for Separate I/O, 0 for Common I/O
BOUNDARY SCAN EXIT ORDER
ORDER
PIN ID
ORDER
PIN ID
10D
9E
ORDER
73
PIN ID
2C
3E
2D
2E
1E
2F
3F
1G
1F
3G
2G
1H
1J
2J
3K
3J
2K
1K
2L
3L
1M
1L
3N
3M
1N
2M
3P
2N
2P
1P
3R
4R
4P
5P
5N
5R
Internal
1
2
6R
6P
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
3
4
6N
7P
10C
11D
9C
9D
11B
11C
9B
10B
11A
10A
9A
5
6
7N
7R
7
8
8R
8P
9
9R
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
11P
10P
10N
9P
10M
11N
9M
9N
11L
11M
9L
10L
11K
10K
9J
8B
7C
6C
8A
7A
7B
6B
6A
5B
5A
4A
5C
4B
3A
2A
1A
2B
3B
1C
1B
9K
98
99
10J
11J
11H
10G
9G
11F
11G
9F
100
101
102
103
104
105
106
107
108
109
10F
11E
10E
3D
3C
1D
Note: 1. NC pins are read as "X" ( i.e. don′t care.)
Rev. 1.3 March 2007
- 16 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
JTAG DC OPERATING CONDITIONS
Parameter
Symbol
Min
1.7
Typ
Max
1.9
Unit
V
Note
Power Supply Voltage
VDD
VIH
1.8
Input High Level
1.3
-
-
-
-
VDD+0.3
0.5
V
Input Low Level
VIL
-0.3
1.4
V
Output High Voltage(IOH=-2mA)
Output Low Voltage(IOL=2mA)
VOH
VOL
VDD
V
VSS
0.4
V
Note: 1. The input level of SRAM pin is to follow the SRAM DC specification.
JTAG AC TEST CONDITIONS
Parameter
Symbol
VIH/VIL
TR/TF
Min
1.3/0.5
1.0/1.0
0.9
Unit
V
Note
Input High/Low Level
Input Rise/Fall Time
ns
V
Input and Output Timing Reference Level
Note: 1. See SRAM AC test output load on page 11.
1
JTAG AC Characteristics
Parameter
Symbol
Min
50
20
20
5
Max
Unit
Note
TCK Cycle Time
tCHCH
tCHCL
tCLCH
tMVCH
tCHMX
tDVCH
tCHDX
tSVCH
tCHSX
tCLQV
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TCK High Pulse Width
TCK Low Pulse Width
TMS Input Setup Time
TMS Input Hold Time
TDI Input Setup Time
TDI Input Hold Time
-
-
5
-
5
-
5
-
SRAM Input Setup Time
SRAM Input Hold Time
Clock Low to Output Valid
5
-
5
-
0
10
JTAG TIMING DIAGRAM
TCK
tCHCH
tCLCH
tCHCL
tMVCH
tCHMX
TMS
TDI
tDVCH
tSVCH
tCHDX
tCHSX
PI
(SRAM)
tCLQV
TDO
Rev. 1.3 March 2007
- 17 -
K7J643682M
K7J641882M
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
165 FBGA PACKAGE DIMENSIONS
15mm x 17mm Body, 1.0mm Bump Pitch, 11x15 Ball Array
B
Top View
A
C
Side View
D
A
G
E
B
F
Bottom View
H ∅
E
Symbol
Value
15 ± 0.1
Units
Note
Symbol
Value
1.0
Units
mm
mm
mm
mm
Note
A
B
C
D
mm
mm
mm
mm
E
F
17 ± 0.1
1.3 ± 0.1
0.35 ± 0.05
14.0
G
H
10.0
0.5 ± 0.05
Rev. 1.3 March 2007
- 18 -
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K7K1618T2C-EC33 | SAMSUNG | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, | 获取价格 | |
K7K1618T2C-EC330 | SAMSUNG | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | 获取价格 | |
K7K1618T2C-EC40 | SAMSUNG | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, | 获取价格 | |
K7K1618T2C-EC40T | SAMSUNG | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, | 获取价格 | |
K7K1618T2C-EI33 | SAMSUNG | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | 获取价格 | |
K7K1618T2C-EI330 | SAMSUNG | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | 获取价格 | |
K7K1618T2C-EI33T | SAMSUNG | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | 获取价格 |
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