K7P163666A-HC30T [SAMSUNG]
Standard SRAM, 512KX36, 1.6ns, CMOS, PBGA119, 14 X 22 MM, BGA-119;
| 型号： | K7P163666A-HC30T |
| 厂家： | 
SAMSUNG |
| 描述： | Standard SRAM, 512KX36, 1.6ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 静态存储器 |
| 文件： | 总14页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
Document Title
512Kx36 & 1Mx18 Synchronous Pipelined SRAM
Revision History
Draft Date
Remark
Rev. No.
History
Dec. 2001
Advance
Rev. 0.0
- Initial Document
Oct. 2002
Advance
Rev. 0.1
- Absolute maximum ratings are changed
VDD : 2.815 - > 3.13
VDDQ : 2.815 - > 2.4
VTERM : 2.815 - > VDDQ+0.5 (2.4V MAX)
- Recommended DC operating conditions are changed
VREF / VCM-CLK : 0.68 - > 0.6, 0.95 - > 0.9
- DC characteristics is changed
ISBZZ : 150 - > 128
- AC Characteristics are changed
TAVKH / TDVKH / TWVKH / TSVKH : 0.4 / 0.5 / 0.5 - > 0.3 / 0.3 / 0.3
TKHAX / TKHDX / TKHWX / TKHSX : 0.5 / 0.5 / 0.5 - > 0.5 / 0.6 / 0.6
Jan. 2003
Sep. 2003
Advance
Final
Rev. 0.2
Rev. 0.3
- Recommended DC operating condition is changed
Max VDIF-CLK : VDDQ+0.3 -> VDDQ+0.6
- Correct typo
VDD -> VDDQ: in MODE CONTROL at page4
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
Sep. 2003
- 1 -
Rev 0.3
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
512Kx36 & 1Mx18 Synchronous Pipelined SRAM
FEATURES
• 512Kx36 or 1Mx18 Organizations.
• 2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).
• HSTL Input and Output Levels.
Maximum Access
Part Number
Organization
Frequency
Time
• Differential, HSTL Clock Inputs K, K.
• Synchronous Read and Write Operation
• Registered Input and Registered Output
• Internal Pipeline Latches to Support Late Write.
• Byte Write Capability(four byte write selects, one for each 9bits)
• Synchronous or Asynchronous Output Enable.
• Power Down Mode via ZZ Signal.
• Programmable Impedance Output Drivers.
• JTAG 1149.1 Compatible Test Access port.
• 119(7x17)Pin Ball Grid Array Package(14mmx22mm).
K7P163666A-HC33
K7P163666A-HC30
K7P163666A-HC25
K7P161866A-HC33
K7P161866A-HC30
K7P161866A-HC25
333MHz
300MHz
250MHz
333MHz
300MHz
250MHz
1.5
1.6
2.0
1.5
1.6
2.0
512Kx36
1Mx18
FUNCTIONAL BLOCK DIAGRAM
Read
Address
Register
SA[0:18] or SA[0:19]
1
512Kx36
or
1Mx18
Write
0
CK
Address
Array
Register
SS
Latch
Latch
SW
Register
SW
Register
Column Decoder
Write/Read Circuit
SW
SWx
Register
SWx
Register
0
1
SWx
(x=a, b, c, d)
or (x=a, b)
Data In
Register
SS
Register
SS
Register
Data Out
Register
G
ZZ
DQx[1:9]
(x=a, b, c, d)
or (x=a, b)
K
K
CK
PIN DESCRIPTION
Pin Name
Pin Description
Pin Name
Pin Description
HSTL Input Reference Voltage
K, K
SAn
DQn
SW
Differential Clocks
VREF
Synchronous Address Input
Bi-directional Data Bus
M1, M2
G
Read Protocol Mode Pins ( M1=VSS, M2=VDDQ )
Asynchronous Output Enable
Synchronous Select
Synchronous Global Write Enable
Synchronous Byte a Write Enable
Synchronous Byte b Write Enable
Synchronous Byte c Write Enable
Synchronous Byte d Write Enable
Asynchronous Power Down
Core Power Supply
SS
SWa
SWb
SWc
SWd
ZZ
TCK
TMS
TDI
TDO
ZQ
JTAG Test Clock
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Data Output
Output Driver Impedance Control
GND
VDD
VSS
NC
VDDQ
Output Power Supply
No Connection
Sep. 2003
Rev 0.3
- 2 -
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
PACKAGE PIN CONFIGURATIONS(TOP VIEW)
K7P163666A(512Kx36)
1
2
3
4
NC
NC
VDD
ZQ
SS
5
6
7
A
B
C
D
E
F
VDDQ
NC
SA13
SA10
SA9
SA11
VSS
VSS
VSS
SWc
VSS
VREF
VSS
SWd
VSS
VSS
VSS
M1
SA7
SA8
SA6
VSS
VSS
VSS
SWb
VSS
VREF
VSS
SWa
VSS
VSS
VSS
M2
SA4
VDDQ
NC
SA17
SA5
SA18
SA12
DQc9
DQc7
DQc5
DQc4
DQc2
VDD
NC
NC
DQc8
DQc6
VDDQ
DQc3
DQc1
VDDQ
DQd1
DQd3
VDDQ
DQd6
DQd8
NC
DQb9
DQb7
DQb5
DQb4
DQb2
VDD
DQb8
DQb6
VDDQ
DQb3
DQb1
VDDQ
DQa1
DQa3
VDDQ
DQa6
DQa8
NC
G
G
H
J
NC
NC
VDD
K
K
L
DQd2
DQd4
DQd5
DQd7
DQd9
SA15
NC
DQa2
DQa4
DQa5
DQa7
DQa9
SA2
K
M
N
P
R
T
SW
SA0
SA1
VDD
SA16
TCK
NC
SA14
TDI
SA3
TDO
NC
ZZ
U
VDDQ
TMS
NC
VDDQ
K7P161866A(1Mx18)
1
2
3
4
5
6
7
A
B
C
D
E
F
VDDQ
NC
SA13
SA19
SA12
NC
SA10
SA9
SA11
VSS
VSS
VSS
SWb
VSS
VREF
VSS
NC
NC
NC
VDD
ZQ
SS
G
SA7
SA8
SA6
VSS
VSS
VSS
NC
SA4
SA17
SA5
DQa9
NC
VDDQ
NC
NC
NC
DQb1
NC
NC
DQb2
NC
DQa8
VDDQ
DQa6
NC
VDDQ
NC
DQa7
NC
G
H
J
DQb3
NC
NC
NC
VDD
K
DQb4
VDDQ
NC
VSS
VREF
VSS
SWa
VSS
VSS
VSS
M2
DQa5
VDD
NC
VDD
VDDQ
DQa4
NC
K
L
DQb5
NC
DQb6
VDDQ
DQb8
NC
K
DQa3
NC
M
N
P
R
T
DQb7
NC
VSS
VSS
VSS
M1
SW
SA0
SA1
VDD
NC
TCK
VDDQ
NC
DQa2
NC
DQb9
SA15
SA18
TMS
DQa1
NC
NC
SA2
SA16
NC
NC
SA14
TDI
SA3
TDO
ZZ
U
VDDQ
VDDQ
Sep. 2003
Rev 0.3
- 3 -
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
FUNCTION DESCRIPTION
The K7P163666A and K7P161866A are 18,874,368 bit Synchronous Pipeline Mode SRAM. It is organized as 524,288 words of 36
bits(or 1,048,576 words of 18 bits)and is implemented in SAMSUNGs advanced CMOS technology.
Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed. At the
updated from output registers edge of the next rising edge of the K clock. An internal write data buffer allows write data to follow one
cycle after addresses and controls. The package is 119(7x17) Ball Grid Array with balls on a 1.27mm pitch.
Read Operation
During reads, the address is registered during the frist clock edge, the internal array is read between this first edge and the second
edge, and data is captured in the output register and driven to the CPU during the second clock edge. SS is driven low during this
cycle, signaling that the SRAM should drive out the data.
During consecutive read cycles where the address is the same, the data output must be held constant without any glitches. This
characteristic is because the SRAM will be read by devices that will operate slower than the SRAM frequency and will require multi-
ple SRAM cycles to perform a single read operation.
Write (Stire) Operation
All addresses and SW are sampled on the clock rising edge. SW is low on the rising clock. Write data is sampled on the rising clock,
one cycle after write address and SW have been sampled by the SRAM. SS will be driven low during the same cycle that the
Address, SW and SW[a:d] are valid to signal that a valid operation is on the Address and Control Input.
Pipelined write are supported. This is done by using write data buffers on the SRAM that capture the write addresses on one write
cycle, and write the array on the next write cycle. The "next write cycle" can actually be many cycles away, broken by a series of
read cycles. Byte writes are supported. The byte write signals SW[a:d] signal which 9-bit bytes will be writen. Timing of SW[a:d] is the
same as the SW signal.
Bypass Read Operation
Since write data is not fully written into the array on first write cycle, there is a need to sense the address in case a future read is to be
done from the location that has not been written yet. For this case, the address comparator check to see if the new read address is
the same as the contents of the stored write address Latch. If the contents match, the read data must be supplied from the stored
write data latch with standard read timing. If there is no match, the read data comes from the SRAM array. The bypassing of the
SRAM array occurs on a byte by byte basis. If one byte is written and the other bytes are not, read data from the last written will have
new byte data from the write data buffer and the other bytes from the SRAM array.
Programmable Impedance Output Buffer Operation
This HSTL Late Write SRAM has been designed with programmable impedance output buffers. The SRAMs output buffer impedance
can be adjusted to match the system data bus impedance, by connecting a external resistor (RQ) between the ZQ pin of the SRAM
and VSS. The value of RQ must be five times the value of the intended line impedance driven by the SRAM. For example, a 250Ω
resistor will give an output buffer impedance of 50Ω. The allowable range of RQ is from 175Ω to 350Ω. Internal circuits evaluate and
periodically adjust the output buffer impedance, as the impedance is affected by drifts in supply voltage and temperature. One evalu-
ation occurs every 32 clock cycles, with each evaluation moving the output buffer impedance level only one step at a time toward the
optimum level. Impedance updates occur when the SRAM is in High-Z state, and thus are triggered by write and deselect operations.
Updates will also be triggered with G HIGH initiated High-Z state, providing the specified G setup and hold times are met. Impedance
match is not instantaneous upon power-up. In order to guarantee optimum output driver impedance, the SRAM requires a minimum
number of non-read cycles (1,024) after power-up. The output buffers can also be programmed in a minimum impedance configura-
tion by connecting ZQ to VSS or VDD.
Mode Control
There are two mode control select pins (M1 and M2) used to set the proper read protocol. This SRAM supports single clock pipelined
operating mode. For proper specified device operation, M1 must be connected to VSS and M2 must be connected to VDDQ. These
mode pins must be set at power-up and must not change during device operation.
Power-Up/Power-Down Supply Voltage Sequencing
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied
simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage
removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ
does not exceed VDD by more than 0.5V during power-down.
Sleep Mode
Sleep mode is a low power mode initiated by bringing the asynchronous ZZ pin high. During sleep mode, all other inputs are ignored
and outputs are brought to a High-Impedance state. Sleep mode current and output High-Z are guaranteed after the specified sleep
mode enable time. During sleep mode the memory array data content is preserved. Sleep mode must not be initiated until after all
pending operations have completed, as any pending operation is not guaranteed to properly complete after sleep mode is initiated.
Normal operations can be resumed by bringing the ZZ pin low, but only after the specified sleep mode recovery time.
Sep. 2003
- 4 -
Rev 0.3
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
FUNCTION DESCRIPTION
The K7P163666A and K7P161866A are 18,874,368 bit Dual Mode (supports both Register Register and Late Select Mode) SRAM
devices. They are organized as 524,288 words by 36 bits for K7P163666A and 1,048,576 words by 18 bits for K7P161866A, fabri-
cated using Samsung's advanced CMOS technology. Late Write/Pipelined Read(RR) for x36/x18 organizations and Late Write/Late
Select Read(LS) for x36 organization are supported.
The chip is operated with a single +2.5V power supply and is compatible wtih HSTL input and output. The package is 119(7x17)
Plastic Ball Grid Array with balls on a 1.27mm pitch.
Read Operation for Register Register Mode(x36 and x18)
During read operations, addresses and controls are registered during the first rising edge of K clock and then the internal array is
read between first and second edges of K clock. Data outputs are updated from output registers off the second rising edge of K clock.
Read Operation for Late Select Mode(x36)
During read operations, addresses(SA) and controls except the Way Select Address(SAS) are registered during the first rising edge
of K clock. The internal array(x72 bit data) is read between the first edge and the second edge, and as the Way Select Address(SAS)
is registered at the second clock edge, x36 bit data is mux selected before the output register.
Write Operation(Late Write)
During write operations, addresses including the Way Select Address(SAS) and controls are registered at the first rising edge of K
clock and data inputs are registered at the following rising edge of K clock. Write addresses and data inputs are stored in the data in
registers until the next write operation, and only at the next write opeation are data inputs fully written into SRAM array. Byte write
operation is supported using SW[a:d] and the timing of SW[a:d] is the same as the SW signal.
Bypass Read Operation
Since write data is not fully written into the array on first write cycle, there is a need to sense the address in case a future read is to be
done from the location that has not been written yet. For this case, the address comparator check to see if the new read address is
the same as the contents of the stored write address Latch. If the contents match, the read data must be supplied from the stored
write data latch with standard read timing. If there is no match, the read data comes from the SRAM array. The bypassing of the
SRAM array occurs on a byte by byte basis. If one byte is written and the other bytes are not, read data from the last written will have
new byte data from the write data buffer and the other bytes from the SRAM array.
Programmable Impedance Output Buffer Operation
This HSTL Late Write SRAM has been designed with programmable impedance output buffers. The SRAMs output buffer impedance
can be adjusted to match the system data bus impedance, by connecting a external resistor (RQ) between the ZQ pin of the SRAM
and VSS. The value of RQ must be five times the value of the intended line impedance driven by the SRAM. For example, a 250Ω
resistor will give an output buffer impedance of 50Ω. The allowable range of RQ is from 175Ω to 350Ω. Internal circuits evaluate and
periodically adjust the output buffer impedance, as the impedance is affected by drifts in supply voltage and temperature. One evalu-
ation occurs every 32 clock cycles, with each evaluation moving the output buffer impedance level only one step at a time toward the
optimum level. Impedance updates occur when the SRAM is in High-Z state, and thus are triggered by write and deselect operations.
Updates will also be triggered with G HIGH initiated High-Z state, providing the specified G setup and hold times are met. Impedance
match is not instantaneous upon power-up. In order to guarantee optimum output driver impedance, the SRAM requires a minimum
number of non-read cycles (1,024) after power-up. The output buffers can also be programmed in a minimum impedance configura-
tion by connecting ZQ to VSS or VDD.
Mode Control
There are two mode control select pins (M1 and M2) used to set the proper read protocol. This SRAM supports single clock pipelined
operating mode. For proper specified device operation, M1 must be connected to VSS and M2 must be connected to VDD. These
mode pins must be set at power-up and must not change during device operation.
Power-Up/Power-Down Supply Voltage Sequencing
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied
simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage
removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ
does not exceed VDD by more than 0.5V during power-down.
Sleep Mode
Sleep mode is a low power mode initiated by bringing the asynchronous ZZ pin high. During sleep mode, all other inputs are ignored
and outputs are brought to a High-Impedance state. Sleep mode current and output High-Z are guaranteed after the specified sleep
mode enable time. During sleep mode the memory array data content is preserved. Sleep mode must not be initiated until after all
pending operations have completed, as any pending operation is not guaranteed to properly complete after sleep mode is initiated.
Normal operations can be resumed by bringing the ZZ pin low, but only after the specified sleep mode recovery time.
Sep. 2003
- 5 -
Rev 0.3
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
TRUTH TABLE
K
X
X
↑
↑
↑
↑
↑
↑
↑
↑
ZZ
H
L
G
X
H
L
SS
X
X
H
L
SW SWa SWb SWc SWd DQa DQb DQc DQd
Operation
Hi-Z Hi-Z Hi-Z Hi-Z Power Down Mode. No Operation
Hi-Z Hi-Z Hi-Z Hi-Z Output Disabled.
X
X
X
H
L
L
L
L
L
L
X
X
X
X
H
L
X
X
X
X
H
H
L
X
X
X
X
H
H
H
L
X
X
X
X
H
H
H
H
L
L
Hi-Z Hi-Z Hi-Z Hi-Z Output Disabled. No Operation
DOUT DOUT DOUT DOUT Read Cycle
L
L
L
X
X
X
X
X
X
L
Hi-Z Hi-Z Hi-Z Hi-Z No Bytes Written
L
L
DIN
Hi-Z Hi-Z Hi-Z Write first byte
Hi-Z Hi-Z Write second byte
L
L
H
H
H
L
Hi-Z
DIN
L
L
H
H
L
Hi-Z Hi-Z
DIN
Hi-Z Write third byte
DIN Write fourth byte
DIN Write all bytes
L
L
H
L
Hi-Z Hi-Z Hi-Z
L
L
L
DIN
DIN
DIN
NOTE : K & K are complementary
ABSOLUTE MAXIMUM RATINGS
Parameter
Core Supply Voltage Relative to VSS
Output Supply Voltage Relative to VSS
Voltage on any I/O pin Relative to VSS
Output Short-Circuit Current
Symbol
VDD
Value
Unit
V
-0.5 to 3.13
-0.5 to 2.4
VDDQ
VTERM
IOUT
V
-0.5 to VDDQ+0.5 (2.4V MAX)
V
25
mA
°C
°C
Operating Temperature
TOPR
TSTG
0 to 70
Storage Temperature
-55 to 125
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Core Power Supply Voltage
Output Power Supply Voltage
Input High Level
Symbol
Min
2.37
1.4
Typ
2.5
1.5
-
Max
2.63
Unit
V
Note
VDD
VDDQ
1.9
V
VIH
VREF+0.1
-0.3
VDDQ+0.3
VREF-0.1
0.9
V
Input Low Level
VIL
-
V
Input Reference Voltage
Clock Input Signal Voltage
Clock Input Differential Voltage
Clock Input Common Mode Voltage
VREF
0.6
0.75
-
V
VIN-CLK
VDIF-CLK
VCM-CLK
-0.3
VDDQ+0.3
VDDQ+0.6
0.9
V
0.1
-
V
0.6
0.75
V
Sep. 2003
Rev 0.3
- 6 -
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
PIN CAPACITANCE
Parameter
Input Capacitance
Symbol
CIN
Test Condition
VIN=0V
Min
Max
4
Unit
pF
-
-
Data Output Capacitance
COUT
VOUT=0V
5
pF
NOTE : Periodically sampled and not 100% tested.(TA=25°C, f=1MHz)
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Note
IDD33
IDD30
IDD25
700
620
550
Average Power Supply Operating Current-x36
(VIN=VIH or VIL, ZZ & SS=VIL)
-
mA
1, 2
IDD33
IDD30
IDD25
650
570
500
Average Power Supply Operating Current-x18
(VIN=VIH or VIL, ZZ & SS=VIL)
-
mA
1, 2
Power Supply Standby Current
(VIN=VIH or VIL, ZZ=VIH)
ISBZZ
ISBSS
ILI
-
128
200
1
mA
mA
µA
1
1
Active Standby Power Supply Current
(VIN=VIH or VIL, SS=VIH, ZZ=VIL)
-
Input Leakage Current
(VIN=VSS or VDDQ)
-1
-1
Output Leakage Current
(VOUT=VSS or VDDQ, DQ in High-Z)
ILO
1
µA
Output High Voltage(Programmable Impedance Mode)
Output Low Voltage(Programmable Impedance Mode)
Output High Voltage(IOH=-0.1mA)
VOH1
VOL1
VOH2
VOL2
VOH3
VOL3
VDDQ/2
VSS
VDDQ
VDDQ/2
VDDQ
0.2
V
V
V
V
V
V
3,5
4,5
6
VDDQ-0.2
VSS
Output Low Voltage(IOL=0.1mA)
6
Output High Voltage(IOH=-6mA)
VDDQ-0.4
VSS
VDDQ
0.4
6
Output Low Voltage(IOL=6mA)
6
NOTE :1. Minimum cycle. IOUT=0mA.
2. 50% read cycles.
3. |IOH|=(VDDQ/2)/(RQ/5)±15% @VOH=VDDQ/2 for 175Ω ≤ RQ ≤ 350Ω.
4. |IOL|=(VDDQ/2)/(RQ/5)±15% @VOL=VDDQ/2 for 175Ω ≤ RQ ≤ 350Ω.
5. Programmable Impedance Output Buffer Mode. The ZQ pin is connected to VSS through RQ.
6. Minimum Impedance Output Buffer Mode. The ZQ pin is connected to VSS or VDD.
Sep. 2003
Rev 0.3
- 7 -
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
AC TEST CONDITIONS (TA=0 to 70°C, VDD=2.37 -2.63V, VDDQ=1.5V)
Parameter
Core Power Supply Voltage
Symbol
VDD
Value
2.37~2.63
1.5
Unit
V
Output Power Supply Voltage
Input High/Low Level
VDDQ
VIH/VIL
VREF
V
1.25/0.25
0.75
V
Input Reference Level
V
Input Rise/Fall Time
TR/TF
0.5/0.5
0.75
ns
V
Input and Out Timing Reference Level
Clock Input Timing Reference Level
NOTE : Parameters are tested with RQ=250Ω and VDDQ=1.5V.
Cross Point
V
AC TEST OUTPUT LOAD
50Ω
VDDQ/2
50Ω
50Ω
5pF
25Ω
DQ
VDDQ/2
50Ω
VDDQ/2
5pF
AC CHARACTERISTICS
-33
-30
-25
Parameter
Symbol
Unit
Note
Min
3.0
1.2
1.2
-
Max
Min
3.3
1.3
1.3
-
Max
Min
4.0
1.6
1.6
-
Max
Clock Cycle Time
tKHKH
tKHKL
tKLKH
tKHQV
tKHQX
tAVKH
tKHAX
tDVKH
tKHDX
tWVKH
tKHWX
tSVKH
tKHSX
tKHQZ
tKHQX1
tGHQZ
tGLQX
tGLQV
tZZE
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Clock High Pulse Width
Clock Low Pulse Width
Clock High to Output Valid
Clock High to Output Hold
Address Setup Time
-
-
-
-
-
-
1.5
1.6
2.0
0.5
0.3
0.5
0.3
0.5
0.3
0.5
0.3
0.5
-
-
0.5
0.3
0.6
0.3
0.6
0.3
0.6
0.3
0.6
-
-
0.5
0.3
0.6
0.3
0.6
0.3
0.6
0.3
0.6
-
-
-
-
-
Address Hold Time
-
-
-
-
-
-
Write Data Setup Time
Write Data Hold Time
-
-
-
SW, SW[a:d] Setup Time
SW, SW[a:d] Hold Time
SS Setup Time
-
-
-
-
-
-
-
-
-
SS Hold Time
-
-
-
Clock High to Output Hi-Z
Clock High to Output Low-Z
G High to Output High-Z
G Low to Output Low-Z
G Low to Output Valid
ZZ High to Power Down(Sleep Time)
ZZ Low to Recovery(Wake-up Time)
1.5
-
1.6
-
2.0
-
0.5
-
0.5
-
0.5
-
1.5
-
1.6
-
2.0
-
0.5
-
0.5
-
0.5
-
1.5
15
20
1.6
15
20
2.0
15
20
-
-
-
tZZR
-
-
-
Sep. 2003
Rev 0.3
- 8 -
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (SS Controlled, G=Low)
1
2
3
4
5
6
7
8
K
tKHKH
tAVKH
tKHKL
tKLKH
tKHAX
tKHSX
SAn
SS
A1
A2
A3
A4
A5
A4
A6
A7
tSVKH
tWVKH
tKHWX
tWVKH
tWVKH
tKHWX
tKHWX
SW
SWx
DQn
tKHDX
tKHQZ
tDVKH tKHDX
tKHQV
tKHQX
tKHQX1
Q2
D4
Q1
D3
Q5
Q4
NOTE
1. D3 is the input data written in memory location A3.
2. Q4 is the output data read from the write data buffer(not from the cell array), as a result of address A4 being a match from the
last write cycle address.
TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (G Controlled, SS=Low)
1
2
3
4
5
6
7
8
K
tKHKH
A3
SAn
G
A1
A2
A4
A5
A4
A6
A7
SW
SWx
DQn
tGHQZ
tGLQV
tGLQX
Q1
Q2
D3
D4
Q5
Q4
NOTE
1. D3 is the input data written in memory location A3.
2. Q4 is the output data read from the write data buffer(not from the cell array), as a result of address A4 being a match from the last
write cycle address.
Sep. 2003
Rev 0.3
- 9 -
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
TIMING WAVEFORMS OF STANDBY CYCLES
1
2
3
4
5
6
7
8
K
tKHKH
SAn
SS
A1
A2
A1
A2
A3
SW
SWx
ZZ
tZZE
tZZR
tKHQV
tKHQV
DQn
Q1
Q2
Q1
Sep. 2003
Rev 0.3
- 10
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG
The SRAM provides a limited set of IEEE standard 1149.1 JTAG functions. This is to test the connectivity during manufacturing
between SRAM, printed circuit board and other components. Internal data is not driven out of SRAM under JTAG control. In conform-
ance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP control-
ler has a standard 16-state machine that resets internally upon power-up, therefore, TRST signal is not required. It is possible to use
this device without utilizing the TAP. To disable the TAP controller without interfacing with normal operation of the SRAM, TCK must
be tied to VSS to preclude mid level input. TMS and TDI are designed so an undriven input will produce a response identical to the
application of a logic 1, and therefore can be left unconnected. But they may also be tied to VDD through a resistor. TDO should be left
unconnected.
JTAG Instruction Coding
JTAG Block Diagram
IR2 IR1 IR0 Instruction
TDO Output
SAMPLE-Z Boundary Scan Register
IDCODE Identification Register
SAMPLE-Z Boundary Scan Register
Notes
0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
1
3
4
3
3
3
0
0
0
BYPASS
SAMPLE
BYPASS
BYPASS
BYPASS
Bypass Register
Boundary Scan Register
Bypass Register
Bypass Register
Bypass Register
1
1
SRAM
CORE
1
1
M1
M2
NOTE :
1. Places DQs in Hi-Z in order to sample all input data regardless of
other SRAM inputs.
2. TDI is sampled as an input to the first ID register to allow for the serial
shift of the external TDI data.
TDI
BYPASS Reg.
TDO
Identification Reg.
Instruction Reg.
3. Bypass register is initiated to VSS when BYPASS instruction is
invoked. The Bypass Register also holds serially loaded TDI when
exiting the Shift DR states.
4. SAMPLE instruction does not places DQs in Hi-Z.
Control Signals
TAP Controller
TMS
TCK
TAP Controller State Diagram
1
0
Test Logic Reset
0
1
1
0
1
Run Test Idle
Select DR
0
Select IR
0
1
1
1
1
Capture DR
0
Capture IR
0
0
Shift DR
1
Shift IR
1
Exit1 DR
0
Exit1 IR
0
0
0
0
0
Pause DR
1
Pause IR
1
Exit2 DR
1
Exit2 IR
1
1
0
Update DR
0
Update IR
1
Sep. 2003
Rev 0.3
- 11
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
SCAN REGISTER DEFINITION
Part
Instruction Register
Bypass Register
1 bits
ID Register
32 bits
Boundary Scan
70 bits
512Kx36
1Mx18
3 bits
3 bits
1 bits
32 bits
51 bits
ID REGISTER DEFINITION
Revision Number Part Configuration Vendor Definition Samsung JEDEC Code
Part
Start Bit(0)
(31:28)
(27:18)
(17:12)
XXXXXX
XXXXXX
(11: 1)
512Kx36
1Mx18
0000
00111 00100
01000 00011
00001001110
00001001110
1
1
0000
BOUNDARY SCAN EXIT ORDER(x36)
BOUNDARY SCAN EXIT ORDER(x18)
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
3B
2B
3A
3C
2C
2A
2D
1D
2E
1E
2F
2G
1G
2H
1H
3G
4D
4E
4G
4H
4M
3L
SA9
SA18
SA10
SA11
SA12
SA13
DQc9
DQc8
DQc7
DQc6
DQc5
DQc4
DQc3
DQc2
DQc1
SWc
ZQ
SA8
SA17
SA7
5B
6B
5A
5C
6C
6A
6D
7D
6E
7E
6F
6G
7G
6H
7H
5G
4F
4K
4L
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
26
27
28
29
30
31
3B
2B
3A
3C
2C
2A
SA9
SA19
SA10
SA11
SA12
SA13
SA8
SA17
SA7
5B
6B
5A
5C
6C
6A
6D
25
24
23
22
21
20
19
SA6
SA6
SA5
SA5
SA4
SA4
DQb9
DQb8
DQb7
DQb6
DQb5
DQb4
DQb3
DQb2
DQb1
SWb
G
DQa9
32
33
1D
2E
DQb1
DQb2
DQa8
DQa7
7E
6F
18
17
34
2G
DQb3
DQa6
DQa5
7G
6H
16
15
35
36
37
38
39
40
41
1H
3G
4D
4E
4G
4H
4M
DQb4
SWb
ZQ
G
K
4F
4K
4L
5L
7K
14
13
12
11
10
SS
K
SS
NC*1
NC*1
SW
K
NC
K
SWa
DQa1
DQa2
DQa3
DQa4
DQa5
DQa6
DQa7
DQa8
DQa9
ZZ
5L
NC
SWa
DQa4
7K
6K
7L
SW
SWd
DQd1
DQd2
DQd3
DQd4
DQd5
DQd6
DQd7
DQd8
DQd9
SA14
SA15
SA0
1K
2K
1L
6L
42
43
2K
1L
DQb5
DQb6
DQa3
6L
9
6M
7N
6N
7P
6P
7T
5T
6R
4T
4P
2L
2M
1N
2N
1P
2P
3T
2R
4N
44
45
2M
1N
DQb7
DQb8
DQa2
DQa1
6N
7P
8
7
8
7
6
ZZ
7T
5T
6R
6
5
4
SA3
5
46
47
48
49
50
51
2P
3T
2R
4N
2T
3R
DQb9
SA14
SA15
SA0
SA3
SA2
SA2
4
SA16
SA1
3
2
SA1
SA16
M2
4P
6T
5R
3
2
1
SA18
M1
70
3R
M1
M2
5R
1
NOTE :1. Pins 4G and 4H are no connection pin to internal chip. The scanned data are fixed to "0" and "1" respectively.
Sep. 2003
Rev 0.3
- 12
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
JTAG DC OPERATING CONDITIONS
Parameter
Power Supply Voltage
Symbol
Min
2.37
1.7
Typ
Max
2.63
Unit
V
Note
VDD
VIH
2.5
Input High Level
-
-
-
-
VDD+0.3
0.8
V
Input Low Level
VIL
-0.3
2.1
V
Output High Voltage(IOH=-2mA)
Output Low Voltage(IOL=2mA)
VOH
VOL
VDD
V
VSS
0.2
V
NOTE : 1. The input level of SRAM pin is to follow the SRAM DC specification.
JTAG AC TEST CONDITIONS
Parameter
Input High/Low Level
Symbol
VIH/VIL
TR/TF
Min
2.5/0.0
1.0/1.0
1.25
Unit
V
Note
Input Rise/Fall Time
ns
V
Input and Output Timing Reference Level
NOTE : 1. See SRAM AC test output load on page 7.
1
JTAG AC Characteristics
Parameter
TCK Cycle Time
Symbol
Min
50
20
20
5
Max
Unit
Note
tCHCH
tCHCL
tCLCH
tMVCH
tCHMX
tDVCH
tCHDX
tSVCH
tCHSX
tCLQV
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TCK High Pulse Width
TCK Low Pulse Width
TMS Input Setup Time
TMS Input Hold Time
TDI Input Setup Time
TDI Input Hold Time
-
-
5
-
5
-
5
-
SRAM Input Setup Time
SRAM Input Hold Time
Clock Low to Output Valid
5
-
5
-
0
10
JTAG TIMING DIAGRAM
TCK
tCHCH
tCHCL
tCLCH
tMVCH
tCHMX
tCHDX
TMS
TDI
tDVCH
tSVCH
tCHSX
PI
(SRAM)
tCLQV
TDO
Sep. 2003
Rev 0.3
- 13
K7P163666A
K7P161866A
512Kx36 & 1Mx18 SRAM
119 BGA PACKAGE DIMENSIONS
1.27
1.27
14.00±0.10
22.00±0.10
Indicator of
Ball(1A) Location
20.50±0.10
C0.70
C1.00
0.750±0.15
1.50REF
0.60±0.10
NOTE :
0.60±0.10
1. All Dimensions are in Millimeters.
2. Solder Ball to PCB Offset : 0.10 MAX.
3. PCB to Cavity Offset : 0.10 MAX.
12.50±0.10
119 BGA PACKAGE THERMAL CHARACTERISTICS
Parameter
Junction to Ambient(at still air)
Junction to Case
Symbol
Theta_JA
Theta_JC
Theta_JB
Thermal Resistance
Unit
°C/W
°C/W
°C/W
Note
TBD
TBD
TBD
1W Heating
Junction to Board
2W Heating
NOTE : 1. Junction temperature can be calculated by : TJ = TA + PD x Theta_JA.
Sep. 2003
Rev 0.3
- 14
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