K9K8G08U0A [SAMSUNG]
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory; 1G ×8位/ 2G ×8位NAND闪存
| 型号： | K9K8G08U0A |
| 厂家： | 
SAMSUNG |
| 描述： | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
| 文件： | 总49页 (文件大小：1215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
K9XXG08UXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Document Title
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Revision History
Revision No History
Draft Date
Nov. 09. 2005
Jan. 10. 2006
Remark
Advance
0.0
0.1
1. Initial issue
1. Leaded part is eliminated
2. tRHW is defined
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
2
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9K8G08U0A-P
K9WAG08U1A-P
K9WAG08U1A-I
Vcc Range
Organization
PKG Type
TSOP1
2.70 ~ 3.60V
X8
52TLGA
FEATURES
• Fast Write Cycle Time
• Voltage Supply
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9K8G08U0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-ICB0/IIB0
52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
GENERAL DESCRIPTION
Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0A′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.
3
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
PIN CONFIGURATION (TSOP1)
K9K8G08U0A-PCB0/PIB0
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
CE
9
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
PACKAGE DIMENSIONS
48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
20.00±0.20
0.787±0.008
#1
#48
#24
#25
1.00±0.05
0.039±0.002
0.05
0.002
MIN
1.20
0.047
MAX
18.40±0.10
0.724±0.004
0~8°
0.45~0.75
0.018~0.030
0.50
0.020
(
)
4
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
PIN CONFIGURATION (TSOP1)
K9WAG08U1A-PCB0/PIB0
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
R/B2
R/B1
RE
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
CE1
CE2
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
WP
N.C
N.C
N.C
N.C
N.C
PACKAGE DIMENSIONS
48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
20.00±0.20
0.787±0.008
#1
#48
#24
#25
1.00±0.05
0.039±0.002
0.05
0.002
MIN
1.20
0.047
MAX
18.40±0.10
0.724±0.004
0~8°
0.45~0.75
0.018~0.030
0.50
0.020
(
)
5
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
K9WAG08U1A - ICB0 / IIB0
L
M
C
E
G
H
K
N
A
B
D
J
F
NC
NC
NC
NC
NC
NC
7
6
NC
/RE1
/CE2
R/B2
IO7-2
NC
IO6-2
IO7-1
IO6-1
IO5-2
Vcc
/RE2
Vss
IO5-1
Vcc
5
4
3
R/B1
/WE1
/CE1
/WP2
IO4-1
IO4-2
IO3-2
CLE2
ALE2
ALE1
NC
IO0-1
IO2-1
IO1-1 IO3-1
IO0-2
Vss
CLE1
2
1
Vss
/WP1
/WE2
NC
Vss
NC
NC
IO1-2
NC
IO2-2
NC
NC
NC
PACKAGE DIMENSIONS
52-TLGA (measured in millimeters)
Bottom View
Top View
12.00±0.10
A
10.00
2.00
1.00
1.00
3
12.00±0.10
7
6
5
4
2
1
B
1.00
1.00
(Datum A)
#A1
A
B
C
D
(Datum B)
E
F
G
H
J
K
L
M
N
41-∅
0.70±0.05
12-∅
1.00±0.05
0.1
∅
M C AB
0.1
∅
M C AB
Side View
17.00±0.10
0.10 C
6
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
PIN DESCRIPTION
Pin Name
Pin Function
DATA INPUTS/OUTPUTS
I/O0 ~ I/O7
CLE
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ADDRESS LATCH ENABLE
ALE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CHIP ENABLE
The CE / CE1 input is the device selection control. When the device is in the Busy state, CE / CE1 high is
ignored, and the device does not return to standby mode in program or erase operation.
Regarding CE / CE1 control during read operation , refer to ’Page Read’ section of Device operation.
CE / CE1
CHIP ENABLE
The CE2 input enables the second K9K8G08U0A
CE2
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WRITE ENABLE
WE
WP
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WRITE PROTECT
The WP pin provides inadvertent program/erase protection during power transitions. The internal high volt-
age generator is reset when the WP pin is active low.
READY/BUSY OUTPUT
The R/B / R/B1 output indicates the status of the device operation. When low, it indicates that a program,
erase or random read operation is in process and returns to high state upon completion. It is an open drain
output and does not float to high-z condition when the chip is deselected or when outputs are disabled.
R/B / R/B1
POWER
Vcc
Vss
N.C
VCC is the power supply for device.
GROUND
NO CONNECTION
Lead is not internally connected.
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
7
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Figure 1. K9K8G08U0A Functional Block Diagram
VCC
VSS
8,192M + 256M Bit
NAND Flash
ARRAY
X-Buffers
A12 - A30
Latches
& Decoders
(2,048 + 64)Byte x 524,288
Y-Buffers
A0 - A11
Latches
& Decoders
Data Register & S/A
Y-Gating
Command
Command
Register
VCC
VSS
I/O Buffers & Latches
Global Buffers
CE
RE
WE
Control Logic
& High Voltage
Generator
I/0 0
Output
Driver
I/0 7
CLE ALE
WP
Figure 2. K9K8G08U0A Array Organization
1 Block = 64 Pages
(128K + 4k) Byte
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 8,192 Blocks
= 8,448 Mbits
512K Pages
(=8,192 Blocks)
8 bit
2K Bytes
64 Bytes
I/O 0 ~ I/O 7
Page Register
2K Bytes
64 Bytes
I/O 0
A0
I/O 1
A1
I/O 2
I/O 3
A3
I/O 4
A4
I/O 5
A5
I/O 6
A6
I/O 7
A7
Column Address
Column Address
Row Address
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
A2
A8
A9
A10
A14
A22
A30
A11
A15
A23
*L
*L
*L
*L
*L
A12
A20
A28
A13
A21
A29
A16
A24
*L
A17
A25
*L
A18
A26
*L
A19
A27
*L
Row Address
Row Address
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than required.
8
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Product Introduction
The K9K8G08U0A is a 8,448Mbit(8,858,370,048 bit) memory organized as 524,288 rows(pages) by 2,112x8 columns. Spare 64x8
columns are located from column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommo-
dating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made
up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists
of two NAND structured strings. A NAND structure consists of 32 cells. Total 1,081,344 NAND cells reside in a block. The program
and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array con-
sists of 8,192 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9K8G08U0A.
The K9K8G08U0A has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades
to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by
bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch
Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For
example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block
erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 1056M byte physical space
requires 31 addresses, thereby requiring five cycles for addressing : 2 cycles of column address, 3 cycles of row address, in that
order. Page Read and Page Program need the same five address cycles following the required command input. In Block Erase oper-
ation, however, only the three row address cycles are used. Device operations are selected by writing specific commands into the
command register. Table 1 defines the specific commands of the K9K8G08U0A.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and
data-input cycles are removed, system performance for solid-state disk application is significantly increased.
The K9WAG08U1A is composed of two K9K8G08U0A chips which are selected separately by each CE1 and CE2. Therefore, in
terms of each CE, the basic operation of K9WAG08U1A is same with K9K8G08U0A except some AC/DC charateristics.
Table 1. Command Sets
Function
1st Cycle
00h
2nd Cycle
Acceptable Command during Busy
Read
30h
Read for Copy Back
Read ID
00h
35h
90h
-
-
Reset
FFh
O
Page Program
80h
10h
Two-Plane Page Program(4)
Copy-Back Program
Two-Plane Copy-Back Program(4)
Block Erase
80h---11h
85h
81h---10h
10h
85h---11h
60h
81h---10h
D0h
Two-Plane Block Erase
Random Data Input(1)
Random Data Output(1)
Read Status
60h---60h
85h
D0h
-
05h
E0h
70h
O
O
O
O
Read EDC Status(2)
Chip1 Status(3)
7Bh
F1h
Chip2 Status(3)
F2h
NOTE : 1. Random Data Input/Output can be executed in a page.
2. Read EDC Status is only available on Copy Back operation.
3. Interleave-operation between two chips is allowed.
It’s prohibited to use F1h and F2h commands for other operations except interleave-operation.
4. Any command between 11h and 81h is prohibited except 70h, F1h, F2h and FFh .
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
9
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Memory Map
K9K8G08U0A is arranged in four 2Gb memory planes. Each plane contains 2,048 blocks and 2112 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that two-plane program/erase operations can be executed by dividing the memory array into plane 0~1 or plane 2~3
separately.
For example, two-plane program/erase operation into plane 0 and plane 2 is prohibited. That is to say, two-plane program/erase oper-
ation into plane 0 and plane 1 or into plane 2 and plane 3 is allowed
Plane 3
(2048 Block)
Plane 2
(2048 Block)
Plane 1
(2048 Block)
Plane 0
(2048 Block)
Block 0
Block 4096
Block 4097
Block 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 62
Page 63
Page 62
Page 63
Page 62
Page 63
Page 62
Page 63
Block 2
Block 4098
Block 4099
Block 3
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 62
Page 63
Page 62
Page 63
Page 62
Page 63
Page 62
Page 63
Block 4092
Block 8188
Block 8189
Block 4093
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 62
Page 63
Page 62
Page 63
Page 62
Page 63
Page 62
Page 63
Block 4094
Block 8190
Block 8191
Block 4095
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 62
Page 63
Page 62
Page 63
Page 62
Page 63
Page 62
Page 63
2112byte Page Registers
2112byte Page Registers
2112byte Page Registers
2112byte Page Registers
10
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VCC
Rating
Unit
-0.6 to +4.6
-0.6 to +4.6
Voltage on any pin relative to VSS
V
VIN
VI/O
-0.6 to Vcc+0.3 (<4.6V)
-10 to +125
K9XXG08UXA-XCB0
Temperature Under Bias
TBIAS
°C
K9XXG08UXA-XIB0
-40 to +125
K9XXG08UXA-XCB0
Storage Temperature
TSTG
IOS
-65 to +150
5
°C
K9XXG08UXA-XIB0
mA
Short Circuit Current
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXG08UXA-XCB0 :TA=0 to 70°C, K9XXG08UXA-XIB0:TA=-40 to 85°C)
Parameter
Supply Voltage
Supply Voltage
Symbol
VCC
Min
2.7
0
Typ.
3.3
0
Max
3.6
0
Unit
V
VSS
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Page Read with
tRC=25ns
CE=VIL, IOUT=0mA
ICC1
Operating
Current
Serial Access
Program
Erase
-
25
35
ICC2
ICC3
ISB1
ISB2
ILI
-
mA
-
CE=VIH, WP=0V/VCC
CE=VCC-0.2, WP=0V/VCC
VIN=0 to Vcc(max)
VOUT=0 to Vcc(max)
-
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
-
-
20
-
1
100
±20
±20
Vcc+0.3
0.2xVcc
-
-
-
µA
ILO
-
-
(1)
VIH
0.8xVcc
-
(1)
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
VIL
-
-0.3
2.4
-
-
V
VOH
VOL
IOH=-400µA
-
IOL=2.1mA
-
0.4
IOL(R/B)
VOL=0.4V
8
10
-
mA
NOTE : 1. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
2. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
3. The typical value of the K9WAG08U1A’s ISB2 is 40µA and the maximum value is 200µA.
4. The maximum value of K9WAG08U1A-P’s ILI and ILO is ±40µA, the maximum value of K9WAG08U1A-I’s ILI and ILO is ±20µA.
11
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
VALID BLOCK
Parameter
Symbol
NVB
Min
Typ.
Max
8,192
Unit
K9K8G08U0A
K9WAG08U1A
8,032
-
-
Blocks
Blocks
NVB
16,064*
16,384*
NOTE :
1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is
presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or pro-
gram factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.
3. The number of valid block is on the basis of single plane operations, and this may be decreased with two plane operations.
* : Each K9K8G08U0A chip in the K9WAG08U1A has Maximun 160 invalid blocks.
AC TEST CONDITION
(K9XXG08UXA-XCB0: TA=0 to 70°C, K9XXG08UXA-XIB0:TA=-40 to 85°C ,K9XXG08UXA: Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9XXG08UXA
Input Pulse Levels
0V to Vcc
Input Rise and Fall Times
5ns
Input and Output Timing Levels
Vcc/2
1 TTL GATE and CL=50pF (K9K8G08U0A-P/K9WAG08U1A-I)
1 TTL GATE and CL=30pF (K9WAG08U1A-P)
Output Load
CAPACITANCE(TA=25°C, VCC=3.3V, f=1.0MHz)
Max
Item
Symbol
Test Condition
Min
Unit
K9K8G08U0A
K9WAG08U1A*
Input/Output Capacitance
Input Capacitance
CI/O
CIN
VIL=0V
VIN=0V
-
-
20
20
40
40
pF
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
K9WAG08U1A-IXB0’s capacitance(I/O, Input) is 20pF.
MODE SELECTION
CLE
H
L
ALE
L
CE
L
WE
RE
H
WP
X
Mode
Command Input
Read Mode
Write Mode
H
L
H
X
Address Input(5clock)
Command Input
H
L
L
L
H
H
H
H
X
H
L
H
Address Input(5clock)
L
L
L
H
Data Input
L
L
L
H
X
X
X
X
X
Data Output
X
X
X
X
X
X
H
H
X
X
X
X
X
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
X
X
H
H
L
X
X
X(1)
X
X
(2)
X
Stand-by
0V/VCC
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
12
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Program / Erase Characteristics
Parameter
Symbol
tPROG
tDBSY
Nop
Min
Typ
200
0.5
-
Max
700
1
Unit
µs
Program Time
-
-
-
-
Dummy Busy Time for Two-Plane Page Program
Number of Partial Program Cycles
Block Erase Time
µs
4
cycles
ms
tBERS
1.5
2
NOTE : 1. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
2. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25°C tempera-
ture.
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
12
5
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(1)
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
-
-
-
-
-
-
-
-
-
-
-
-
tCLS
tCLH
(1)
20
5
tCS
tCH
tWP
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
12
12
5
(1)
tALS
tALH
(1)
12
5
tDS
tDH
tWC
tWH
25
10
70
WE High Hold Time
(2)
Address to Data Loading Time
tADL
NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
13
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
AC Characteristics for Operation
Parameter
Symbol
tR
Min
-
Max
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
Data Transfer from Cell to Register
ALE to RE Delay
25
tAR
10
10
20
12
-
-
CLE to RE Delay
tCLR
tRR
-
Ready to RE Low
-
RE Pulse Width
tRP
-
WE High to Busy
tWB
100
Read Cycle Time
tRC
25
-
-
RE Access Time
tREA
tCEA
tRHZ
tCHZ
tRHOH
tRLOH
tCOH
tREH
tIR
20
CE Access Time
-
25
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High to Output hold
RE Low to Output hold
CE High to Output hold
RE High Hold Time
-
100
-
30
15
5
-
-
15
10
0
-
-
Output Hi-Z to RE Low
RE High to WE Low
WE High to RE Low
-
tRHW
tWHR
tRST
100
60
-
-
-
5/10/500(1)
Device Resetting Time(Read/Program/Erase)
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5µs.
14
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s)
have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s)
does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select tran-
sistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on
00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The ini-
tial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every
initial invalid block has non-FFh data at the column address of 2048. Since the initial invalid block information is also erasable in
most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the
initial invalid block(s) based on the original initial invalid block information and create the initial invalid block table via the following
suggested flow chart(Figure 3). Any intentional erasure of the original initial invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Check "FFh" at the column address 2048
*
of the 1st and 2nd page in the block
No
Create (or update)
Check "FFh"
Initial
Invalid Block(s) Table
Yes
No
Last Block ?
Yes
End
Figure 3. Flow chart to create initial invalid block table.
15
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be
employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be
reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Erase Failure
Detection and Countermeasure sequence
Status Read after Erase --> Block Replacement
Status Read after Program --> Block Replacement
Verify ECC -> ECC Correction
Write
Read
Program Failure
Single Bit Failure
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
ECC
Program Flow Chart
Start
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
No
I/O 6 = 1 ?
or R/B = 1 ?
Yes
*
No
Program Error
I/O 0 = 0 ?
Yes
Program Completed
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
16
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Write 00h
Start
Write 60h
Write Block Address
Write Address
Write 30h
Write D0h
Read Data
Read Status Register
ECC Generation
No
I/O 6 = 1 ?
or R/B = 1 ?
No
Verify ECC
Reclaim the Error
Yes
*
No
Yes
Erase Error
I/O 0 = 0 ?
Page Read Completed
Yes
Erase Completed
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Block Replacement
Block A
1st
{
(n-1)th
1
nth
an error occurs.
(page)
Buffer memory of the controller.
Block B
1st
2
{
(n-1)th
nth
(page)
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
17
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
NAND Flash Technical Notes (Continued)
Copy-Back Operation with EDC & Sector Definition for EDC
Generally, copy-back program is very powerful to move data stored in a page without utilizing any external memory. But, if the source
page has one bit error due to charge loss or charge gain, then without EDC, the copy-back program operation could also accumulate
bit errors.
K9K8G08U0A supports copy-back with EDC to prevent cumulative bit errors. To make EDC valid, the page program operation
should be performed on either whole page(2112byte) or sector(528byte). Modifying the data of a sector by Random Data Input
before Copy-Back Program must be performed for the whole sector and is allowed only once per each sector. Any partial
modification smaller than a sector corrupts the on-chip EDC codes.
A 2,112-byte page is composed of 4 sectors of 528-byte and each 528-byte sector is composed of 512-byte main area and 16-byte
spare area.
Main Field (2,048 Byte)
Spare Field (64 Byte)
"A" area
"B" area
"C" area
"D" area
"E" area
"F" area
"G" area
"H" area
(1’st sector)
(2’nd sector)
(3’rd sector)
(4’th sector)
(1’st sector) (2’nd sector)(3’rd sector) (4’th sector)
512 Byte
512 Byte
512 Byte
512 Byte
16 Byte
16 Byte
16 Byte
16 Byte
Table 2. Definition of the 528-Byte Sector
Main Field (Column 0~2,047)
Spare Field (Column 2,048~2,111)
Sector
Area Name
Column Address
Area Name
Column Address
2,048 ~ 2,063
2,064 ~ 2,079
2,080 ~ 2,095
2,096 ~ 2,111
1’st 528-Byte Sector
2’nd 528-Byte Sector
3’rd 528-Byte Sector
4’th 528-Byte Sector
"A"
"B"
"C"
"D"
0 ~ 511
"E"
"F"
"G"
"H"
512 ~ 1,023
1,024 ~ 1,535
1,536 ~ 2,047
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
(64)
(64)
Page 63
Page 31
Page 63
Page 31
:
:
(1)
:
(32)
:
(3)
(2)
(1)
Page 2
Page 1
Page 0
(3)
(32)
(2)
Page 2
Page 1
Page 0
Data register
Data register
From the LSB page to MSB page
DATA IN: Data (1)
Data (64)
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data (64)
18
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Interleave Page Program
K9K8G08U0A is composed of two K9F4G08U0As. K9K8G08U0A provides interleaving operation between two K9F4G08U0As.
This interleaving page program improves the system throughput almost twice compared to non-interleaving page program.
At first, the host issues page program command to one of the K9F4G08U0A chips, say K9F4G08U0A(chip #1). Due to this
K9K8G08U0A goes into busy state. During this time, K9F4G08U0A(chip #2) is in ready state. So it can execute the page program
command issued by the host.
After the execution of page program by K9F4G08U0A(chip #1), it can execute another page program regardless of the
K9F4G08U0A(chip #2). Before that the host needs to check the status of K9F4G08U0A(chip #1) by issuing F1h command. Only
when the status of K9F4G08U0A(chip #1) becomes ready status, host can issue another page program command. If the
K9F4G08U0A(chip #1) is in busy state, the host has to wait for the K9F4G08U0A(chip #1) to get into ready state.
Similarly, K9F4G08U0A chip(chip #2) can execute another page program after the completion of the previous program. The host can
monitor the status of K9F4G08U0A(chip #2) by issuing F2h command. When the K9F4G08U0A(chip #2) shows ready state, host can
issue another page program command to K9F4G08U0A(chip #2).
This interleaving algorithm improves the system throughput almost twice. The host can issue page program command to each chip
individually. This reduces the time lag for the completion of operation.
NOTES : During interleave operations, 70h command is prohibited.
19
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
≈
≈
≈
20
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
≈
≈
≈
21
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
≈
≈
≈
≈ ≈
≈
22
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
≈ ≈
≈
23
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of µ-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CLE
CE don’t-care
CE
WE
ALE
I/Ox
80h
Address(5Cycles)
tCS
Data Input
Data Input
10h
tCH
tCEA
CE
CE
tREA
tWP
RE
WE
out
I/O0~7
Figure 5. Read Operation with CE don’t-care.
CLE
CE
CE don’t-care
RE
ALE
tR
R/B
WE
I/Ox
Data Output(serial access)
00h
Address(5Cycle)
30h
24
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
NOTE
I/O
I/Ox
DATA
ADDRESS
Device
Data In/Out
2,112byte
Col. Add1
Col. Add2
Row Add1
Row Add2
Row Add3
K9K8G08U0A
I/O 0 ~ I/O 7
A0~A7
A8~A11
A12~A19
A20~A27
A28~A30
Command Latch Cycle
CLE
tCLH
tCLS
tCS
tCH
CE
tWP
WE
tALS
tALH
ALE
I/Ox
tDH
tDS
Command
Address Latch Cycle
tCLS
CLE
tCS
tWC
tWC
tWC
tWC
CE
tWP
tWP
tWP
tWP
WE
tWH
tWH
tALH
tWH
tALH
tWH
tALH
tALH
tALS
tALH
tDH
tALS
tALS
tALS
tALS
ALE
I/Ox
tDH
tDH
tDH
tDH
tDS
tDS
tDS
tDS
tDS
Col. Add2
Row Add1
Col. Add1
Row Add2
Row Add3
25
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Input Data Latch Cycle
tCLH
CLE
tCH
CE
tWC
ALE
tALS
tWP
tWP
tWP
WE
tWH
tDH
tDH
tDH
tDS
tDS
tDS
I/Ox
DIN final
DIN 0
DIN 1
* Serial access Cycle after Read(CLE=L, WE=H, ALE=L)
tRC
CE
tCHZ
tCOH
tREH
tREA
tREA
tREA
RE
tRHZ
tRHZ
tRHOH
I/Ox
Dout
Dout
Dout
tRR
R/B
NOTES : Transition is measured at ± 200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
26
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L)
CE
tRC
tCHZ
tCOH
tRP
tREH
RE
tRHZ
tREA
tCEA
tREA
tRLOH
tRHOH
I/Ox
R/B
Dout
Dout
tRR
NOTES : Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
Status Read Cycle & EDC Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tCH
tWP
WE
RE
tCEA
tCHZ
tCOH
tWHR
tRHZ
tDH
tDS
tREA
tIR
tRHOH
I/Ox
Status Output
70h or 7Bh
27
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Read Operation
tCLR
CLE
CE
tWC
WE
ALE
RE
tWB
tAR
tRHZ
tR
tRC
tRR
Col. Add2 Row Add1 Row Add2
00h
Col. Add1
30h
Dout N
Dout N+1
Dout M
Row Add3
I/Ox
Column Address
Row Address
Busy
R/B
Read Operation(Intercepted by CE)
CLE
CE
WE
ALE
RE
tWB
tCHZ
tAR
tCOH
tR
tRC
tRR
Row Add2 Row Add3
Dout N+2
00h
Col. Add1 Col. Add2 Row Add1
30h
Dout N+1
Dout N
I/Ox
R/B
Row Address
Column Address
Busy
28
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
29
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Page Program Operation
CLE
CE
tWC
tWC
tWC
WE
ALE
RE
tPROG
tWHR
tWB
tADL
Din
N
Din
M
Co.l Add1 Col. Add2 Row Add1 Row Add2 Row Add3
80h
I/Ox
R/B
10h
70h
I/O0
SerialData
Input Command
Program
Command
1 up to m Byte
Serial Input
Read Status
Command
Column Address
Row Address
I/O
0
=0 Successful Program
=1 Error in Program
I/O0
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
30
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
≈
≈
≈ ≈
≈ ≈
≈
31
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
≈
≈ ≈
≈
32
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Block Erase Operation
CLE
CE
tWC
WE
tBERS
tWB
tWHR
ALE
RE
I/Ox
Row Add1 Row Add2 Row Add3
60h
D0h
70h
I/O 0
Row Address
Busy
R/B
Auto Block Erase
Setup Command
Erase Command
I/O
0
=0 Successful Erase
Read Status I/O
Command
0=1 Error in Erase
33
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
≈
≈ ≈
≈
≈
≈ ≈
≈
34
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
35
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Read ID Operation
CLE
CE
WE
ALE
RE
tAR
tREA
Device
Code
I/Ox
3rd cyc.
4th cyc.
5th cyc.
00h
ECh
90h
Read ID Command
Maker Code Device Code
Address 1cycle
Device
Device Code(2nd Cycle)
D3h
3rd Cycle
51h
Same as K9K8G08U0A in it
4th Cycle
5th Cycle
58h
K9K8G08U0A
K9WAG08U1A
95h
36
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
ID Definition Table
90 ID : Access command = 90H
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
5th Byte
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously Programmed Pages, Etc
Page Size, Block Size,Redundant Area Size, Organization, Serial Access Minimum
Plane Number, Plane Size
3rd ID Data
Internal Chip Number
Cell Type
Description
I/O7
I/O6
I/O5 I/O4
I/O3 I/O2
I/O1 I/O0
1
2
4
8
0
0
1
1
0
1
0
1
2 Level Cell
4 Level Cell
8 Level Cell
0
0
1
1
0
1
0
1
16 Level Cell
1
2
4
8
0
0
1
1
0
1
0
1
Number of
Simultaneously
Programmed Pages
Interleave Program
Between multiple chips
Not Support
Support
0
1
Not Support
Support
0
1
Cache Program
4th ID Data
Description
I/O7
I/O6
I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
1KB
2KB
4KB
8KB
0
0
1
1
0
1
0
1
Page Size
(w/o redundant area )
64KB
128KB
256KB
512KB
0
0
1
1
0
1
0
1
Block Size
(w/o redundant area )
Redundant Area Size
( byte/512byte)
8
16
0
1
x8
x16
0
1
Organization
50ns/30ns
25ns
Reserved
Reserved
0
1
0
1
0
0
1
1
Serial Access Minimum
37
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
5th ID Data
Description
I/O7
I/O6 I/O5 I/O4
I/O3 I/O2
I/O1
I/O0
1
2
4
8
0
0
1
1
0
1
0
1
Plane Number
64Mb
128Mb
256Mb
512Mb
1Gb
2Gb
4Gb
8Gb
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Plane Size
(w/o redundant Area)
Reserved
0
0
0
38
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Device Operation
PAGE READ
Page read is initiated by writing 00h-30h to the command register along with five address cycles. After initial power up, 00h command
is latched. Therefore only five address cycles and 30h command initiates that operation after initial power up. The 2,112 bytes of data
within the selected page are transferred to the data registers in less than 20µs(tR). The system controller can detect the completion of
this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read
out in 25ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the
data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output com-
mand. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
CLE
CE
WE
ALE
tR
R/B
RE
I/Ox
00h
Address(5Cycle)
30h
Data Output(Serial Access)
Col. Add.1,2 & Row Add.1,2,3
Data Field
Spare Field
39
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Figure 7. Random Data Output In a Page
tR
R/B
RE
Address
5Cycles
Address
2Cycles
Data Output
Data Output
30h
E0h
00h
05h
I/Ox
Col. Add.1,2 & Row Add.1,2,3
Col. Add.1,2
Data Field
Data Field
Spare Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programming of a word or consecutive
bytes up to 2,112, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 4 times for a single page. The addressing should be done in sequential
order in a block. A page program cycle consists of a serial data loading period in which up to 2,112bytes of data may be loaded into
the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random
data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
Modifying the data of a sector by Random Data Input before Copy-Back Program must be performed for the whole sector
and is allowed only once per each sector. Any partial modification smaller than a sector corrupts the on-chip EDC codes.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the
serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and tim-
ings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the
Read Status Register command may be entered to read the status register. The system controller can detect the completion of a pro-
gram cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset
command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
tPROG
R/B
"0"
Pass
80h
Address & Data Input
I/O0
Fail
I/Ox
10h
70h
Col. Add.1,2 & Row Add.1,2,3
Data
"1"
40
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Figure 9. Random Data Input In a Page
tPROG
R/B
"0"
Pass
80h
Address & Data Input
Address & Data Input
I/O0
Fail
I/Ox
85h
10h
70h
Col. Add.1,2
Data
Col. Add.1,2 & Row Add1,2,3
Data
"1"
Copy-Back Program
The Copy-Back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The ben-
efit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copy-
ing-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2,112-byte data into the internal data buffer. As soon as the device returns to Ready state, Page-Copy Data-input com-
mand (85h) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to
actually begin the programming operation. During tPROG, the device executes EDC of itself. Once the program process starts, the
Read Status Register command (70h) or Read EDC Status command (7Bh) may be entered to read the status register. The system
controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register.
When the Copy-Back Program is complete, the Write Status Bit(I/O 0) and EDC Status Bits (I/O 1 ~ I/O 2) may be checked(Figure 10
& Figure 11& Figure 12). The internal write verification detects only errors for "1"s that are not successfully programmed to "0"s and
the internal EDC checks whether there is only 1-bit error for each 528-byte sector of the source page. More than 2-bit error detection
is not available for each 528-byte sector. The command register remains in Read Status command mode or Read EDC Status com-
mand mode until another valid command is written to the command register.
During copy-back program, data modification is possible using random data input command (85h) as shown in Figure11. But EDC
status Bits are not available during copy back for some bits or bytes modified by Random Data Input operation.
However, in case of the 528 byte sector unit modification, EDC status bits are available.
Figure 10. Page Copy-Back Program Operation
tR
tPROG
R/B
I/Ox
"0"
Add.(5Cycles)
Pass
00h
35h
Add.(5Cycles)
10h
70h/7Bh
I/O0
85h
Col. Add.1,2 & Row Add.1,2,3
Destination Address
Col. Add.1,2 & Row Add.1,2,3
Source Address
"1"
Fail
Note: 1. Copy-Back Program operation is allowed only within the same memory plane.
2. On the same plane, It’s prohibited to operate copy-back program from an odd address page(source page) to an even
address page(target page) or from an even address page(source page) to an odd address page(target page).
Therefore, the copy-back program is permitted just between odd address pages or even address pages.
Figure 11. Page Copy-Back Program Operation with Random Data Input
tPROG
tR
R/B
Add.(5Cycles)
Add.(2Cycles)
Col. Add.1,2
I/Ox
35h
Add.(5Cycles)
70h
00h
85h
Data
85h
Data
10h
Col. Add.1,2 & Row Add.1,2,3
Source Address
Col. Add.1,2 & Row Add.1,2,3
Destination Address
There is no limitation for the number of repetition.
Note: 1. For EDC operation, only one time random data input is possible at the same address.
41
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
EDC OPERATION
Note that for the user who use Copy-Back with EDC mode, only one time random data input is possible at the same address during
Copy-Back program or page program mode. For the user who use Copy-Back without EDC, there is no limitation for the random data
input at the same address.
Figure 12. Page Copy-Back Program Operation with EDC & Read EDC Status
tR
tPROG
R/B
I/Ox
Add.(5Cycles)
00h
35h
Add.(5Cycles)
10h
EDC Status Output
85h
7Bh
Col. Add.1,2 & Row Add.1,2,3
Destination Address
Col. Add.1,2 & Row Add.1,2,3
Source Address
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup
command(60h). Only address A18 to A30 is valid while A12 to A17 is ignored. The Erase Confirm command(D0h) following the block
address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that
memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 13 details the sequence.
Figure 13. Block Erase Operation
tBERS
R/B
"0"
Pass
60h
I/O0
Fail
70h
Address Input(3Cycle)
Row Add 1,2,3
I/Ox
D0h
"1"
Two-Plane Page Program
Two-Plane Page Program is an extension of Page Program, for a single plane with 2112 byte page registers. Since the device is
equipped with four memory planes, activating the two sets of 2112 byte page registers enables a simultaneous programming of two
pages. But there is some restriction, two-plane program operations can be executed by dividing the memory array into plane 0~1 or
plane 2~3 separately. For example, two-plane program operation into plane 0 and plane 2 is prohibited. That is to say, two-plane pro-
gram operation into plane 0 and plane 1 or into plane 2 and plane 3 is allowed.
After writing the first set of data up to 2112 byte into the selected page register, Dummy Page Program command (11h) instead of
actual Page Program command (10h) is inputted to finish data-loading of the first plane. Since no programming process is involved,
R/B remains in Busy state for a short period of time(tDBSY). Read Status command (70h) may be issued to find out when the device
returns to Ready state by polling the Ready/Busy status bit(I/O 6). Then the next set of data for the other plane is inputted after the
81h command and address sequences. After inputting data for the last plane, actual True Page Program(10h) instead of dummy
Page Program command (11h) must be followed to start the programming process. The operation of R/B and Read Status is the
same as that of Page Program. Althougth two planes are programmed simultaneously, pass/fail is not available for each page when
the program operation completes. Status bit of I/O 0 is set to "1" when any of the pages fails.
Restriction in addressing with Two-Plane Page Program is shown is Figure14.
42
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Figure 14. Two-Plane Page Program
tDBSY
Note2
tPROG
R/B
I/O0 ~ 7
Address & Data Input
Address & Data Input
80h
11h
70h
81h
10h
A0 ~ A11 : Valid
A12 ~ A17 : Fixed ’Low’
A0 ~ A11 : Valid
A12 ~ A17 : Valid
A18
A19 ~ A29 : Fixed ’Low’
A30 : Valid
: Fixed ’Low’
A18
A19 ~ A29 : Valid
A30 : Must be same as previous A30
: Fixed ’High’
NOTE : 1. It is noticeable that same row address except for A18 is applied to the two blocks
2.Any command between 11h and 81h is prohibited except 70h and FFh.
80h
11h
81h
10h
Data
Input
Plane 0
Plane 1
(2048 Block)
(2048 Block)
Block 0
Block 2
Block 1
Block 3
Block 4092
Block 4094
Block 4093
Block 4095
NOTE : It is an example for two-plane page program into plane 0~1(In this case, A30 is low), and the method for two-plane page program into
plane 2 ~3 is same. two-plane page program into plane 0&2(or plane 0&3, or plane 1&2, or plane 1&3) is prohibited.
Two-Plane Block Erase
Basic concept of Two-Plane Block Erase operation is identical to that of Two-Plane Page Program. Up to two blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command(60h) followed by
three address cycles) may be repeated up to twice for erasing up to two blocks. Only one block should be selected from each plane.
The Erase Confirm command(D0h) initiates the actual erasing process. The completion is detected by monitoring R/B pin or Ready/
Busy status bit (I/O 6).
Two-plane erase operations can be executed by dividing the memory array into plane 0~1 or plane 2~3 separately.
For example, two-plane erase operation into plane 0 and plane 2 is prohibited. That is to say, two-plane erase operation into plane 0
and plane 1 or into plane 2 and plane 3 is allowed.
Figure 15. Two-Plane Block Erase Operation
tBERS
R/B
"0"
60h
D0h
70h
Pass
I/OX
60h
Address (3 Cycle)
Address (3 Cycle)
I/O 0
A12 ~ A17 : Fixed ’Low’
A12 ~ A17 : Fixed ’Low’
"1"
Fail
A18
A19 ~ A29 : Fixed ’Low’
A30 : Valid
:Fixed ’Low’
A18
A19 ~ A29 : valid
A30 : mMust be same as previous A30
: Fixed ’High’
NOTE : Two-plane block erase into plane 0&2(or plane 0&3, or plane 1&2, or plane 1&3) is prohibited.
43
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Two-Plane Copy-Back Program
Two-Plane Copy-Back Program is an extension of Copy-Back Program, for a single plane with 2112 byte page registers. Since the
device is equipped with four memory planes, activating the two sets of 2112 byte page registers enables a simultaneous program-
ming of two pages.
Figure 16. Two-Plane Copy-Back Program Operation
tR
tR
R/B
I/Ox
Add.(5Cycles)
Col. Add.1,2 & Row Add.1,2,3
Add.(5Cycles)
00h
35h
00h
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane1
Source Address On Plane0
1
tPROG
tDBSY
R/B
I/Ox
Add.(5Cycles)
85h
Add.(5Cycles)
10h
11h
81h
70h
Note4
Col. Add.1,2 & Row Add.1,2,3
Destination Address
Col. Add.1,2 & Row Add.1,2,3
Destination Address
1
A0 ~ A11 : Fixed ’Low’
A12 ~ A17 : Fixed ’Low’
A0 ~ A11 : Fixed ’Low’
A12 ~ A17 : Valid
A18
A19 ~ A29 : Fixed ’Low’
A30 : Valid
: Fixed ’Low’
A18
A19 ~ A29 : Valid
A30 : Must be same as previous A30
: Fixed ’High’
Plane0/2
Plane1/3
Source page
Source page
Target page
(1) : Read for Copy Back On Plane0(or Plane2)
(2) : Read for Copy Back On Plane1(or Plane3)
(3) : Two-Plane Copy-Back Program
Target page
(1)
(3)
(2)
(3)
Data Field
Spare Field
Data Field
Spare Field
Note: 1. Copy-Back Program operation is allowed only within the same memory plane.
2. On the same plane, It’s prohibited to operate copy-back program from an odd address page(source page) to an even
address page(target page) or from an even address page(source page) to an odd address page(target page).
Therefore, the copy-back program is permitted just between odd address pages or even address pages.
3. Two-plane copy-back page program into plane 0&2(or plane 0&3, or plane 1&2, or plane 1&3) is prohibited.
4. Any command between 11h and 81h is prohibited except 70h and FFh.
44
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Figure 17. Two-Plane Copy-Back Program Operation with Random Data Input
tR
tR
R/B
I/Ox
Add.(5Cycles)
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane0
Add.(5Cycles)
00h
35h
00h
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane1
1
tDBSY
R/B
I/Ox
Add.(5Cycles)
11h
Data
85h
Data
Add.(2Cycles)
Col. Add.1,2
85h
Note4
Col. Add.1,2 & Row Add.1,2,3
Destination Address
2
1
A0 ~ A11 : Valid
A12 ~ A17 : Fixed ’Low’
A18
: Fixed ’Low’
A19 ~ A29 : Fixed ’Low’
A30
: Valid
tPROG
R/B
Add.(5Cycles)
10h
Data
85h
Data
Add.(2Cycles)
Col. Add.1,2
I/Ox
81h
Col. Add.1,2 & Row Add.1,2,3
Destination Address
2
A0 ~ A11 : Valid
A12 ~ A17 : Valid
A18
A19 ~ A29 : Valid
A30 : Must be same as previous A30
: Fixed ’High’
Note: 1. Copy-Back Program operation is allowed only within the same memory plane.
2. On the same plane, It’s prohibited to operate copy-back program from an odd address page(source page) to an even
address page(target page) or from an even address page(source page) to an odd address page(target page).
Therefore, the copy-back program is permitted just between odd address pages or even address pages.
3. EDC status Bits are not available during copy back for some bits or bytes modified by Random Data Input operation.
In case of the 528 byte plane unit modification, EDC status bits are available.
4. Any command between 11h and 81h is prohibited except 70h and FFh.
45
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to Table 3 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, the read command(00h) should be given before starting read cycles.
Table 3. Status Register Definition for 70h Command
I/O
Page Program
Pass/Fail
Not use
Block Erase
Pass/Fail
Not use
Read
Not use
Definition
Fail : "1"
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Pass : "0"
Not use
Don’t -cared
Don’t -cared
Don’t -cared
Don’t -cared
Don’t -cared
Busy : "0"
Not use
Not use
Not use
Not Use
Not Use
Not Use
Not Use
Not Use
Not Use
Not Use
Not Use
Not Use
Ready/Busy
Write Protect
Ready/Busy
Write Protect
Ready/Busy
Write Protect
Ready : "1"
Protected : "0"
Not Protected : "1"
NOTE : 1. I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
2. Status Register Definition for F1h & F2h command is same as that of 70h command.
READ EDC STATUS
Read EDC status operation is only available on ’Copy Back Program’. The device contains an EDC Status Register which may be
read to find out whether there is error during ’Read for Copy Back’. After writing 7Bh command to the command register, a read cycle
outputs the content of the EDC Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line
control allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired.
RE or CE does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command reg-
ister remains in EDC Status Read mode until further commands are issued to it.
Table 4. Status Register Definition for 7Bh Command
I/O
Copy Back Program
Pass/Fail of Copy Back Program
EDC Status
Page Program Block Erase
Read
Definition
Pass : "0", Fail : "1"
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
Pass/Fail
Not use
Pass/Fail
Not use
Not use
Not use
Not use
Not Use
Not Use
Not Use
No Error : "0", Error : "1"
Valid : "1", Invalid : "0"
Don’t -cared
Validity of EDC Status
Not Use
Not use
Not use
Not Use
Not Use
Not Use
Not Use
Not Use
Don’t -cared
Not Use
Not Use
Not Use
Don’t -cared
I/O 6 Ready/Busy of Copy Back Program
Ready/Busy
Ready/Busy
Ready/Busy Busy : "0", Ready : "1"
I/O 7 Write Protect of Copy Back Program Write Protect
Write Protect Write Protect Protected : "0", Not Protected :"1"
NOTE : 1. I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
2. More than 2-bit error detection isn’t available for each 528 Byte sector.
That is to say, only 1-bit error detection is avaliable for each 528 Byte sector.
46
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Five read cycles sequentially output the manufacturer code(ECh), and the device code and 3rd, 4th, 5th cycle ID respectively.
The command register remains in Read ID mode until further commands are issued to it. Figure 18 shows the operation sequence.
Figure 18. Read ID Operation
tCLR
CLE
CE
tCEA
WE
ALE
RE
tAR
tWHR
tREA
Device
Code
I/OX
90h
ECh
3rd Cyc.
4th Cyc.
5th Cyc.
00h
Address. 1cycle
Maker code
Device code
Device
Device Code(2nd Cycle)
3rd Cycle
51h
Same as K9K8G08U0A in it
4th Cycle
5th Cycle
58h
K9K8G08U0A
K9WAG08U1A
D3h
95h
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. If the device is already in reset state a new reset command will be
accepted by the command register. The R/B pin transitions to low for tRST after the Reset command is written. Refer to Figure 19
below.
Figure 19. RESET Operation
tRST
R/B
I/OX
FFh
Table 5. Device Status
After Power-up
After Reset
Operation mode
00h Command is latched
Waiting for next command
47
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig.20). Its value can be
determined by the following guidance.
Rp
ibusy
VCC
3.3V device - VOL : 0.4V, VOH : 2.4V
Ready Vcc
R/B
VOH
open drain output
CL
VOL
Busy
tf
tr
GND
Device
Figure 20. Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 3.3V, Ta = 25°C , CL = 50pF
200
2.4
Ibusy
150n
3m
150
0.8
1.2
100n
50n
100
2m
1m
tr
tf
50
0.6
1.8
1.8
2K
1.8
1.8
4K
1K
3K
Rp(ohm)
Rp value guidance
VCC(Max.) - VOL(Max.)
3.2V
8mA + ΣIL
Rp(min, 3.3V part) =
=
IOL + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
48
Preliminary
FLASH MEMORY
K9WAG08U1A
K9K8G08U0A
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL
during power-up and power-down. A recovery time of minimum 100µs is required before internal circuit gets ready for any command
sequences as shown in Figure 21. The two step command sequence for program/erase provides additional software protection.
Figure 21. AC Waveforms for Power Transition
3.3V device : ~ 2.5V
3.3V device : ~ 2.5V
VCC
High
WP
WE
100µs
49
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