KMM5362205C2WG [SAMSUNG]

2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh; 2M ×36 DRAM SIMM使用1Mx16和4M四CAS EDO , 1K刷新
KMM5362205C2WG
型号: KMM5362205C2WG
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
2M ×36 DRAM SIMM使用1Mx16和4M四CAS EDO , 1K刷新

动态存储器
文件: 总17页 (文件大小:290K)
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KMM5362205C2WG-5

EDO DRAM Module, 2MX36, 50ns, CMOS, DIMM-72

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0 SAMSUNG

KMM5362205C2WG-6

EDO DRAM Module, 2MX36, 60ns, CMOS, DIMM-72

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0 SAMSUNG

KMM536256BW-7

Fast Page DRAM Module, 256KX36, 70ns, CMOS, SIMM-72

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0 SAMSUNG

KMM536256C-8

Fast Page DRAM Module, 256KX36, 80ns, CMOS, SIMM-72

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0 SAMSUNG

KMM536256C-8

Fast Page DRAM Module, 256KX36, 80ns, CMOS, SIMM-72

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0 SAMSUNG

KMM53632000BK

32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V

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14 SAMSUNG

KMM53632000BK-6

Fast Page DRAM Module, 32MX36, 60ns, CMOS, SIMM-72

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0 SAMSUNG

KMM53632000BKG

32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V

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12 SAMSUNG

KMM53632000BKV-5

Fast Page DRAM Module, 32MX36, 50ns, CMOS, SIMM-72

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0 SAMSUNG

KMM53632000BKV-6

Fast Page DRAM Module, 32MX36, 60ns, CMOS, SIMM-72

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0 SAMSUNG

KMM53632000BKVG-5

Fast Page DRAM Module, 32MX36, 50ns, CMOS, SIMM-72

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0 SAMSUNG

KMM53632000BKVG-6

Fast Page DRAM Module, 32MX36, 60ns, CMOS, SIMM-72

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0 SAMSUNG

KMM53632000CK

32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V

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11 SAMSUNG

KMM53632000CK-5

Fast Page DRAM Module, 32MX36, 50ns, CMOS, DIMM-72

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0 SAMSUNG

KMM53632000CK-6

Fast Page DRAM Module, 32MX36, 60ns, CMOS, DIMM-72

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0 SAMSUNG