KMM53632004BKG-6 [SAMSUNG]

EDO DRAM Module, 32MX36, 60ns, CMOS, SIMM-72;
KMM53632004BKG-6
型号: KMM53632004BKG-6
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

EDO DRAM Module, 32MX36, 60ns, CMOS, SIMM-72

动态存储器 内存集成电路
文件: 总19页 (文件大小:675K)
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KMM53632004CK

32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V

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6 SAMSUNG

KMM53632004CK-6

EDO DRAM Module, 32MX36, 60ns, CMOS, DIMM-72

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0 SAMSUNG

KMM53632004CKG

32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V

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8 SAMSUNG

KMM5364000C-6

Fast Page DRAM Module, 4MX36, 60ns, CMOS, SIMM-72

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0 SAMSUNG

KMM5364000CG-6

Fast Page DRAM Module, 4MX36, 60ns, CMOS, SIMM-72

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0 SAMSUNG

KMM5364000H-7

Fast Page DRAM Module, 4MX36, 70ns, CMOS, SIMM-72

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0 SAMSUNG

KMM5364000H-8

Fast Page DRAM Module, 4MX36, 80ns, CMOS, SIMM-72

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0 SAMSUNG

KMM5364003BK-6

Fast Page DRAM Module, 4MX36, 60ns, CMOS, SIMM-72

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0 SAMSUNG

KMM5364003BK-7

Fast Page DRAM Module, 4MX36, 70ns, CMOS, SIMM-72

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0 SAMSUNG

KMM5364003BSW

4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

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8 SAMSUNG

KMM5364003BSWG

4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

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10 SAMSUNG

KMM5364003BSWG-5

Fast Page DRAM Module, 4MX36, 50ns, CMOS, SIMM-72

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0 SAMSUNG

KMM5364003CK

4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V

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14 SAMSUNG

KMM5364003CKG

4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V

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9 SAMSUNG

KMM5364003CKG-5

Fast Page DRAM Module, 4MX36, 50ns, CMOS, DIMM-72

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0 SAMSUNG