M364C0804CT0-C50 [SAMSUNG]
Fast Page DRAM Module, 8MX64, 50ns, CMOS, DIMM-168;
| 型号： | M364C0804CT0-C50 |
| 厂家： | 
SAMSUNG |
| 描述： | Fast Page DRAM Module, 8MX64, 50ns, CMOS, DIMM-168 动态存储器 |
| 文件： | 总21页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DRAM MODULE
M364C080(8)4CT0-C
Buffered 8Mx64 DIMM
(4Mx16 base)
Revision 0.0
June 1999
DRAM MODULE
M364C080(8)4CT0-C
Revision History
Version 0.0 (June 1999)
• The 4th. generation of 64M components are applied for this module.
DRAM MODULE
M364C080(8)4CT0-C
M364C080(8)4CT0-C Fast Page Mode
8M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 5V
GENERAL DESCRIPTION
FEATURES
• Part Identification
The Samsung M364C080(8)4CT0-C is a 4Mx64bits Dynamic
RAM high density memory module. The Samsung
M364C080(8)4CT0-C consists of eight CMOS 4Mx16bits
DRAMs in TSOP-II 400mil packages and two 16 bits driver IC
in TSSOP package mounted on a 168-pin glass-epoxy sub-
strate. A 0.1 or 0.22uF decoupling capacitor is mounted on
the printed circuit board for each DRAM. The
M364C080(8)4CT0-C is a Dual In-line Memory Module and is
intended for mounting into 168 pin edge connector sockets.
Part number
PKG
Ref. CBR Ref. ROR Ref.
M364C0804CT0-C TSOPll
M364C0884CT0-C TSOPll
4K
8K
4K/64ms
4K/64ms 8K/64ms
• Fast Page Mode Operation
• CAS-before-RAS Refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single 5V±10% power supply
PERFORMANCE RANGE
• JEDEC standard pinout & Buffered PDpin
• Buffered input except RAS and DQ
Speed
tRAC
50ns
60ns
tCAC
18ns
20ns
tRC
tPC
-C50
90ns
110ns
35ns
40ns
• PCB : Height(1000mil), double sided component
-C60
PIN CONFIGURATIONS
PIN NAMES
Pin
Pin Front Pin Front
Front Pin Back Pin Back Pin Back
Pin Names
Function
A0, B0, A1 - A11 Address Input(4K ref.)
A0, B0, A1 - A12 Address Input(8K ref.)
57
58
59
60
61
62
63
64
65
66
1
2
3
4
5
6
7
8
9
VSS
29 CAS2
DQ22 85
DQ23 86 DQ36 114 RAS1 142 DQ59
87 DQ37 115 RFU 143 VCC
DQ24 88 DQ38 116 VSS 144 DQ60
VSS 113 CAS3 141 DQ58
DQ0 30 RAS0
DQ1 31
DQ2 32
DQ3 33
OE0
VSS
A0
VCC
DQ0 - DQ71
W0, W2
OE0, OE2
RAS0 - RAS3
CAS0 - CAS7
VCC
Data In/Out
Read/Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power(+5V)
RFU 89 DQ39 117
RFU 90 VCC 118
RFU 91 DQ40 119
RFU 92 DQ41 120
DQ25 93 DQ42 121
A1
A3
A5
A7
A9
145 RFU
146 RFU
147 RFU
148 RFU
149 DQ61
VCC
34
A2
DQ4 35
DQ5 36
DQ6 37
A4
A6
A8
10 DQ7 38
11 *DQ8 39
12
13 DQ9 41 RFU
14 DQ10 42 RFU
15 DQ11 43
16 DQ12 44
17 DQ13 45 RAS2
18 46 CAS4
19 DQ14 47 CAS6
20 DQ15 48
21 DQ16 49
A10
A12
VCC
*DQ26 94 DQ43 122 A11 150 *DQ62
VSS
Ground
67 DQ27 95 *DQ44 123 *A13 151 DQ63
68
69
70
71
72
73
74
75
76
77
VSS
40
VSS
96
DQ28 97 DQ45 125 RFU 153 DQ64
DQ29 98 DQ46 126 B0 154 DQ65
VSS 124 VCC 152 VSS
NC
No Connection
Presence Detect Enable
Presence Detect
ID bit
PDE
PD1 - 8
ID0 - 1
VSS
OE2
DQ30 99 DQ47 127 VSS 155 DQ66
DQ31 100 DQ48 128 RFU 156 DQ67
VCC 101 DQ49 129 RAS3 157 VCC
DQ32 102 VCC 130 CAS5 158 DQ68
DQ33 103 DQ50 131 CAS7 159 DQ69
DQ34 104 DQ51 132 PDE 160 DQ70
*DQ35 105 DQ52 133 VCC 161 *DQ71
VSS 106 *DQ53 134 RSVD 162 VSS
PD1 107 VSS 135 RSVD 163 PD2
PD3 108 RSVD 136 DQ54 164 PD4
PD5 109 RSVD 137 DQ55 165 PD6
PD7 110 VCC 138 VSS 166 PD8
ID0 111 RFU 139 DQ56 167 ID1
VCC 112 CAS1 140 DQ57 168 VCC
RSVD
Reserved Use
Reserved for Future
VCC
RFU
Pins marked ¢*¢ are not used in this module.
W2
VCC
PD & ID Table
22 *DQ17 50 RSVD 78
Pin
50NS
60NS
79
80
81
82
83
84
23
VSS
51 RSVD
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PD8
0
0
1
1
0
0
0
1
0
0
1
1
0
1
1
1
24 RSVD 52 DQ18
25 RSVD 53 DQ19
26
27
VCC
W0
54
VSS
55 DQ20
28 CAS0 56 DQ21
NOTE : A12 is used for only M364C0884CT-C (8K Ref.)
ID0
ID1
0
0
0
0
PD Note :PD & ID Terminals must each be pulled up through a resistor to VCC at the next higher
level assembly. PDs will be either open (NC) or driven to VSS via on-board buffer circuits.
ID Note : IDs will be either open (NC) or connected directly to VSS without a buffer.
PD : 0 for Vol of Drive IC & 1 for N.C
ID : 0 for Vss & 1 for N.C
DRAM MODULE
M364C080(8)4CT0-C
FUNCTIONAL BLOCK DIAGRAM
RAS0
RAS1
W0
OE0
A0
RAS2
RAS3
W2
OE2
B0
A1-A11(A12)
A1-A11(A12)
DQ0-DQ7
DQ36-DQ43
LCAS
LCAS
U0
LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CAS0
CAS4
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U4
U6
U2
DQ9-DQ16
DQ18-DQ25
DQ27-DQ34
DQ45-DQ52
DQ54-DQ61
DQ63-DQ70
UCAS
UCAS
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
UCAS
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CAS5
CAS1
UCAS
DQ8
DQ9
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CAS2
LCAS
U1
LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
LCAS
CAS6
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U5
U7
U3
UCAS
UCAS
UCAS
UCAS
CAS3
CAS7
DQ8
DQ9
DQ8
DQ9
DQ8
DQ9
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
Note : A12 is used for only M364C0884CT (8K ref.)
A0
B0
U0-U1,U4-U5
U2-U3,U6-U7
U0-U7
A1-A11(A12)
W0, OE0
W2, OE2
U0-U1,U4-U5
U2-U3,U6-U7
Vcc
0.1 or 0.22uF Capacitor
under each DRAM
To all DRAMs
Vss
DRAM MODULE
M364C080(8)4CT0-C
ABSOLUTE MAXIMUM RATINGS *
Item
Symbol
Rating
Unit
Voltage on any pin relative VSS
Voltage on VCC supply relative to VSS
Storage Temperature
VIN, VOUT
VCC
-1 to +7.0
-1 to +7.0
-55 to +125
8
V
V
°C
W
Tstg
PD
Power Dissipation
Short Circuit Output Current
IOS
50
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item
Symbol
Min
Typ
Max
Unit
4.5
0
2.4
5.5
0
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
VSS
VIH
VIL
5.0
0
-
V
V
V
V
*1
VCC
*2
-
-1.0
0.8
*1 : VCC+2.0V at pulse width£20ns, which is measured at VCC.
*2 : -2.0V at pulse width£20ns, which is measured at VSS.
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
M364C0804CT0
M364C0884CT0
Symbol
Speed
Unit
Min
Max
Min
Max
-50
-60
580
540
-
-
460
420
mA
mA
-
-
ICC1
ICC2
ICC3
Don¢t care
-
100
-
100
mA
-50
-60
-
-
580
540
-
-
460
420
mA
mA
-50
-60
-
-
380
340
-
-
340
300
mA
mA
ICC4
ICC5
ICC6
Don¢t care
-
30
-
30
mA
-50
-60
-
-
580
540
-
-
460
420
mA
mA
II(L)
IO(L)
-10
-10
10
10
-10
-10
10
10
uA
uA
Don¢t care
Don¢t care
VOH
VOL
2.4
-
-
2.4
-
-
V
V
0.4
0.4
ICC1*
ICC2
ICC3*
ICC4*
ICC5
ICC6*
I(IL)
: Operating Current * (RAS, CAS, Address cycling @tRC=min)
: Standby Current (RAS=CAS=W=VIH)
: RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min)
: Fast Page Mode Current * (RAS=VIL, CAS cycling : tPC=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min)
: Input Leakage Current (Any input 0£VIN£Vcc+0.5V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V£VOUT£Vcc)
: Output High Voltage Level (IOH = -5mA)
I(OL)
VOH
VOL
: Output Low Voltage Level (IOL = 4.2mA)
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one Fast page mode cycle time, tPC.
DRAM MODULE
M364C080(8)4CT0-C
CAPACITANCE (TA = 25°C, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0, B0, A1 - A12]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0 - RAS3]
Input capacitance[CAS0 - CAS7]
Input/Output capacitance[DQ0 - 71]
CIN1
CIN2
CIN3
CIN4
CDQ
20
20
24
20
24
pF
pF
pF
pF
pF
-
-
-
-
-
AC CHARACTERISTICS (0°C£TA£70°C, VCC=5.0V±10%. See notes 1,2.)
Test condition : Vih/Vil=2.6/0.8V, Voh/Vol=2.4/0.4V, output loading CL=100pF
-50
-60
Parameter
Symbol
Unit
Note
Min
90
Max
Min
110
153
Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
tRC
133
tRWC
tRAC
tCAC
tAA
50
18
25
60
20
30
3,4
Access time from CAS
3,4,5,11
3,10,11
3,11
Access time from column address
CAS to output in Low-Z
0
0
tCLZ
tOFF
tT
Output buffer turn-off delay
Transition time(rise and fall)
RAS precharge time
0
13
50
0
13
50
6,11
1
1
2
30
50
13
50
13
20
15
5
40
60
15
60
15
20
15
5
tRP
RAS pulse width
10K
10K
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tWP
RAS hold time
11
11
CAS hold time
CAS pulse width
10K
37
10K
45
RAS to CAS delay time
4,11
10,11
11
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
25
30
0
0
11
10
0
10
0
11
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referencde to CAS
Read command hold referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data in set-up time
12
10
25
0
10
30
0
12
11
0
0
8
0
0
8,11
10
10
15
13
0
10
10
15
15
0
11
15
tRWL
tCWL
tDS
9,11
9,11
Data in hold time
10
10
tDH
Refresh period
64
64
tREF
tWCS
tCWD
tAWD
tCPWD
Write command set-up time
CAS to W delay time
0
0
7
7,15
7
36
48
53
38
53
60
Column address to W delay time
CAS prechange to W delay time
7
DRAM MODULE
M364C080(8)4CT0-C
AC CHARACTERISTICS (0°C£TA£70°C, VCC=5.0V±10%. See notes 1,2.)
-50
-60
Parameter
Symbol
Unit
Note
Min
73
5
Max
Min
83
5
Max
RAS ro W delay time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7,11
11,16
11
tRWD
tCSR
tCHR
tRPC
tCPA
tPC
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS to CAS precharge time
10
5
10
5
11
Access time from CAS precharge
Fast page mode cycle time
30
35
3,11
35
76
10
50
30
10
10
40
85
10
60
35
10
10
Fast page mode read-modify-write cycle time
CAS precharge time(Fast page cycle)
RAS pulse width(Fast page cycle)
RAS hold time from CAS precharge
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
OE access time
tPRWC
tCP
13
200K
200K
tRASP
tRHCP
tWRP
tWRH
tOEA
tOED
tOEZ
tOEH
11
11
11
11
11
11
13
13
15
13
OE to data delay
13
0
13
0
Output buffer turn off delay time from OE
OE command hold time
13
15
Present Detect Read Cycle
PDE to Valid PD bit
10
7
10
7
ns
ns
tPD
PDE to PD bit Inactive
2
2
tPDOFF
DRAM MODULE
M364C080(8)4CT0-C
NOTES
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
1.
8.Either tRCH or tRRH must be satisfied for a read cycle.
9.
These parameters are referenced to the CAS leading edge in
early write cycles.
2. Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are ref-
erence levels for measuring timing of input signals. Transi-
tion times are measured between VIH(min) and VIL(max) and
are assumed to be 5ns for all inputs.
10.
Operation within the tRAD(max) limit insures that tRAC(max)
can be met. tRAD(max) is specified as reference point only. If
tRAD is greater than the specified tRAD(max) limit, then
access time is controlled by tAA.
3.
4.
Measured with a load equivalent to 2 TTL loads and 100pF.
11.
12.
The timing skew from the DRAM to the DIMM resulted from
the addition of buffers.
Operation within the tRCD(max) limit insures that tRAC(max)
can be met. tRCD(max) is specified as a reference point only.
If tRCD is greater than the specified tRCD(max) limit, then
access time is controlled exclusively by tCAC.
tASC, tCAH are referenced to the earlier CAS falling edge.
13. tCP is specified from the last CAS rising edge in the previous
cycle to the first CAS falling edge in the next cycle.
5.
6.
Assumes that tRCD³ tRCD(max).
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to VOH or
VOL.
14.
15.
16.
tCWD is referenced to the later CAS falling edge at word read-
modify-write cycle.
7. tWCS, tRWD, tCWD, tAWD and tCPWD are not restrictive operat-
ing parameter. They are included in the data sheet as electri-
cal characteristics only. If tWCS³ tWCS(min) the cycle is an
early write cycle and the data out pin will remain high imped-
ance for the duration of the cycle. If tRWD³ tRWD(min),
tCWD³ tCWD(min), tAWD³ tAWD(min) and tCPWD³ tCPWD(min).
The cycle is a read-modify-write cycle and the data out will
contain data read from the selected cell. If neither of the
above sets of conditions is satisfied, the condition of data
out(at access time) is indeterminate.
tCWL is specified from W falling edge to the earlier CAS rising
edge.
tCSR is referenced to earlier CAS falling low before RAS tran-
sition low.
DRAM MODULE
M364C080(8)4CT0-C
READ CYCLE
tRC
tRAS
tRP
VIH -
RAS
VIL -
tCSH
tCRP
tASR
tCRP
tRCD
tRSH
tCAS
VIH -
CAS
VIL -
tRAD
tRAL
tRAH
tASC
tRCS
tCAH
VIH -
ROW
ADDRESS
COLUMN
ADDRESS
A
VIL -
tRCH
tRRH
VIH -
W
VIL -
tOFF
tOEZ
tAA
VIH -
tOEA
OE
VIL -
tCAC
tCLZ
tRAC
VOH -
DQ
DATA-OUT
OPEN
VOL -
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
tRP
VIH -
RAS
VIL -
tCSH
tCRP
tCRP
tRCD
tRSH
tCAS
VIH -
CAS
VIL -
tRAD
tRAL
tASR
tRAH
tASC
tCAH
VIH -
VIL -
ROW
ADDRESS
COLUMN
ADDRESS
A
tCWL
tRWL
tWCS
tWCH
tWP
VIH -
VIL -
W
VIH -
VIL -
OE
DQ
tDS
tDH
DATA-IN
VIH -
VIL -
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
tRC
tRP
tRAS
VIH -
RAS
VIL -
tCSH
tCRP
tCRP
tRCD
tRSH
tCAS
VIH -
VIL -
CAS
tRAD
tRAL
tASR
tRAH
tASC
tCAH
COLUMN
ADDRESS
VIH -
VIL -
ROW
ADDRESS
A
tCWL
tRWL
VIH -
VIL -
tWP
W
VIH -
VIL -
OE
DQ
tOED
tOEH
tDS
tDH
DATA-IN
VIH -
VIL -
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
READ - MODIFY - WRTIE CYCLE
tRWC
tRAS
tRP
VIH -
RAS
VIL -
tCRP
tRCD
tRSH
tCAS
VIH -
CAS
VIL -
tRAD
tRAH
tASR
tASC
tCAH
tCSH
VIH -
VIL -
ROW
ADDR
COLUMN
ADDRESS
A
tRWL
tAWD
tCWD
tCWL
VIH -
VIL -
tWP
W
tRWD
tOEA
VIH -
VIL -
OE
tCLZ
tCAC
tOED
tOEZ
tAA
tDS
tDH
tRAC
VI/OH -
VI/OL -
VALID
DATA-OUT
VALID
DATA-IN
DQ
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
FAST PAGE READ CYCLE
NOTE : DOUT = OPEN
tRP
tRASP
¡ó
VIH -
RAS
tRHCP
VIL -
tPC
tCRP
tCP
tRCD
tRAD
tCP
tRSH
tCAS
tCAS
¡ó
VIH -
CAS
tCAS
VIL -
tASC
tCSH
tASR
ROW
tASC
tCAH
tASC
tCAH
tRAH
tCAH
tRCH
¡ó
¡ó
VIH -
VIL -
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
A
W
ADDR
ADDRESS
tRCS
tRRH
tRCS
tRCS
tRCH
¡ó
VIH -
VIL -
tCAC
tOEA
tCAC
tOEA
tCAC
tOEA
¡ó
¡ó
VIH -
VIL -
OE
tAA
tOFF
tAA
tOFF
tCLZ
tAA
tOFF
tOEZ
tRAC
tCLZ
tCLZ
tOEZ
VALID
tOEZ
VALID
VOH -
VOL -
VALID
DATA-OUT
DQ
DATA-OUT
DATA-OUT
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
FAST PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRP
tRASP
¡ó
VIH -
RAS
tRHCP
VIL -
tPC
tPC
tCRP
tCP
tRCD
tCP
tRSH
tCAS
tCAS
¡ó
VIH -
VIL -
tCAS
CAS
tRAD
tASC
tRAH
ROW
tCStHCAH
tASC
tCAH
tASC
tCAH
tASR
¡ó
¡ó
VIH -
VIL -
COLUMN
COLUMN
ADDRESS
COLUMN
ADDRESS
A
ADDRESS
ADDR
tWCS
tWCS
tWCH
tWP
tWCS
tWCH
¡ó
tWCH
tWP
VIH -
VIL -
tWP
W
tCWL
tRWL
tCWL
tCWL
¡ó
VIH -
VIL -
OE
DQ
¡ó
tDS
tDH
tDS
tDH
tDS
tDH
¡ó
¡ó
VIH -
VIL -
VALID
DATA-IN
VALID
DATA-IN
VALID
DATA-IN
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
FAST PAGE READ - MODIFY - WRITE CYCLE
tRP
tRASP
tCP
VIH -
VIL -
tCSH
RAS
CAS
tRSH
tCAS
tRCD
tRAD
tCRP
VIH -
VIL -
tCAS
tPRWC
tCAH
tRAH
tRAL
tCAH
tASR
tASC
tASC
VIH -
VIL -
ROW
ADDR
COL.
ADDR
COL.
ADDR
A
tRWL
tWP
tRCS
tCWL
tCWL
VIH -
VIL -
tWP
W
tCWD
tAWD
tRWD
tCWD
tAWD
tCPWD
tOEA
VIH -
VIL -
tOEA
OE
tOED
tCAC
tAA
tOED
tCAC
tDH
tDH
tAA
tDS
tOEZ
tDS
tOEZ
tRAC
VI/OH -
VI/OL -
DQ
tCLZ
tCLZ
VALID
VALID
DATA-IN
VALID
VALID
DATA-OUT
DATA-IN
DATA-OUT
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
RAS - ONLY REFRESH CYCLE
NOTE : W, OE, DIN = Don¢t care
DOUT = OPEN
tRC
tRP
tRAS
VIH -
RAS
VIL -
tRPC
tCRP
tCRP
VIH -
CAS
VIL -
tASR
tRAH
VIH -
VIL -
ROW
ADDR
A
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE, A = Don¢t care
tRC
tRP
tRAS
tRP
VIH -
RAS
tRPC
tCP
VIL -
tRPC
VIH -
VIL -
tCSR
tWRP
CAS
W
tCHR
tWRH
VIH -
VIL -
tOFF
VOH -
VOL -
DQ
OPEN
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
HIDDEN REFRESH CYCLE ( READ )
tRC
tRC
tRP
tRP
tRAS
tRAS
VIH -
RAS
VIL -
tCRP
tRCD
tRSH
tCHR
VIH -
VIL -
CAS
tRAD
tASR
tRAH
tASC
tRCS
tCAH
COLUMN
ADDRESS
VIH -
VIL -
ROW
ADDRESS
A
tWRH
tWRP
tRRH
VIH -
VIL -
W
tAA
VIH -
VIL -
OE
tOEA
tOFF
tCAC
tCLZ
tRAC
tOEZ
DATA-OUT
VOH -
VOL -
DQ
OPEN
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : DOUT = OPEN
tRC
tRC
tRP
tRP
tRAS
tRAS
VIH -
RAS
VIL -
tCRP
tRCD
tRSH
tCHR
VIH -
CAS
VIL -
tRAD
tASR
tRAH
tASC
tCAH
VIH -
VIL -
ROW
ADDRESS
COLUMN
ADDRESS
A
tWRH
tWRP
tWCS
tWCH
VIH -
VIL -
W
tWP
VIH -
VIL -
OE
tDS
tDH
VIH -
VIL -
DQ
DATA-IN
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
tRP
VIH -
VIL -
tRAS
RAS
CAS
tCPT
tRSH
tCAS
tCSR
VIH -
VIL -
tCHR
tRAL
tASC
tCAH
VIH -
VIL -
COLUMN
ADDRESS
A
tRRH
tRCH
tAA
tWRP
tWRH
READ CYCLE
tRCS
tCAC
VIH -
W
VIL -
VIH -
OE
VIL -
tOFF
tOEZ
tOEA
tCLZ
VOH -
DQ
DATA-OUT
VOL -
WRITE CYCLE
tRWL
tWRP
tWRH
tCWL
VIH -
W
tWCS
tWCH
tWP
VIL -
VIH -
OE
VIL -
tDS
tDH
DATA-IN
VIH -
DQ
VIL -
READ-MODIFY-WRITE
tAWD
tCWL
tRWL
tWRP
tWRH
tRCS
tCWD
VIH -
tWP
W
tCAC
tOEA
VIL -
tAA
VIH -
OE
tOED
tOEZ
VIL -
tDH
tCLZ
tDS
VI/OH -
DQ
VI/OL -
VALID
DATA-OUT
VALID
DATA-IN
Don¢t care
Undefined
NOTE : This timing diagram is applied to all devices besides 16M DRAM 4th & 64M DRAM.
DRAM MODULE
M364C080(8)4CT0-C
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE, A = Don¢t care
tRP
tRASS
tRPS
tRPC
VIH -
RAS
tRPC
tCP
VIL -
tCHS
VIH -
VIL -
tCSR
CAS
DQ
tOFF
VOH -
VOL -
OPEN
tWRP
tWRH
VIH -
VIL -
W
TEST MODE IN CYCLE
NOTE : OE, A = Don¢t care
tRC
tRP
tRAS
tRP
VIH -
RAS
tRPC
tCP
VIL -
tRPC
VIH -
CAS
VIL -
tCSR
tWTS
tCHR
tWTH
VIH -
W
VIL -
tOFF
VOH -
DQ
OPEN
VOL -
Don¢t care
Undefined
DRAM MODULE
M364C080(8)4CT0-C
PACKAGE DIMENSIONS
Units : Inches (millimeters)
5.250
(133.350)
0.054
(1.372)
R 0.079
0.118
(3.000)
5.014
(127.350)
(R 2.000)
0.157±0.004
(4.000±0.100)
B
C
A
.118DIA±.004
(3.000DIA±.100)
0.250
(6.350)
0.250
(6.350)
0.350
1.450
2.150
(8.890)
(36.830)
(54.61)
.450
(11.430)
4.550
(115.57)
( Front view )
0.150 Max
(3.81 Max)
0.050±0.0039
(1.270±0.10)
( Back view )
0.250
(6.350)
0.250
(6.350)
0.039±.002
(1.000±.050)
0.1230±.0050
(3.125±.125)
0.1230±.0050
(3.125±.125)
0.01Max
(0.25 Max)
0.050
(1.270)
0.079±.0040
(2.000±.100)
0.079±.0040
(2.000±.100)
Detail A
Detail B
Detail C
Tolerances :±.005(.13) unless otherwise specified
The used device is 4Mx16 DRAM with Fast page mode, TSOP II.
DRAM Part No. : M364C0804CT0 - K4F641611C-T
M364C0884CT0 - K4F661611C-T
相关型号：
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