M372F1600ET0-C50 [SAMSUNG]
EDO DRAM Module, 16MX72, 50ns, CMOS, DIMM-168;型号: | M372F1600ET0-C50 |
厂家: | SAMSUNG |
描述: | EDO DRAM Module, 16MX72, 50ns, CMOS, DIMM-168 动态存储器 内存集成电路 |
文件: | 总20页 (文件大小:222K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DRAM MODULE
M372F160(8)0EJ(T)0-C
M372F160(8)0EJ(T)0-C EDO Mode
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
FEATURES
• Part Identification
GENERAL DESCRIPTION
The Samsung M372F160(8)0EJ(T)0-C is
a 16Mx72bits
Part number
PKG
Ref. CBR Ref.
ROR Ref.
Dynamic RAM high density memory module. The Samsung
M372F160(8)0EJ(T)0-C consists of eighteen CMOS
16Mx4bits DRAMs in SOJ/TSOP-II 400mil packages and two
16 bits driver IC in TSSOP package mounted on a 168-pin
glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is
mounted on the printed circuit board for each DRAM. The
M372F160(8)0EJ(T)0-C is a Dual In-line Memory Module and
is intended for mounting into 168 pin edge connector sockets.
M372F1600EJ0-C
SOJ
4K
8K
4K/64ms
M372F1600ET0-C TSOP
M372F1680EJ0-C SOJ
M372F1680ET0-C TSOP
4K/64ms
8K/64ms
• Extended Data Out Mode Operation
• CAS-before-RAS Refresh capability
• RAS-only and Hidden refresh capability
• LVTTL compatible inputs and outputs
• Single 3.3V±0.3V power supply
PERFORMANCE RANGE
Speed
tRAC
50ns
60ns
tCAC
18ns
20ns
tRC
84ns
104ns
tHPC
20ns
25ns
• JEDEC standard pinout & Buffered PDpin
• Buffered input except RAS and DQ
• PCB : Height(1250mil), double sided component
-C50
-C60
PIN CONFIGURATIONS
PIN NAMES
Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back
Pin Names
Function
A0, B0, A1 - A11 Address Input(4K ref.)
A0, B0, A1 - A12 Address Input(8K ref.)
1
2
3
4
5
6
7
8
9
VSS
29 *CAS2 57 DQ22 85
VSS
113 *CAS3 141 DQ58
DQ0 30 RAS0 58 DQ23 86 DQ36 114 *RAS1 142 DQ59
DQ1 31
DQ2 32
DQ3 33
OE0 59
VCC
87 DQ37 115 RFU 143 VCC
DQ0 - DQ71
W0, W2
OE0, OE2
RAS0, RAS2
CAS0, CAS4
VCC
Data In/Out
VSS
A0
60 DQ24 88 DQ38 116
61 RFU 89 DQ39 117
VSS
A1
A3
A5
A7
A9
144 DQ60
145 RFU
146 RFU
147 RFU
148 RFU
149 DQ61
Read/Write Enable
Output Enable
VCC
34
A2
62 RFU 90
VCC 118
DQ4 35
DQ5 36
DQ6 37
A4
A6
A8
63 RFU 91 DQ40 119
64 RFU 92 DQ41 120
65 DQ25 93 DQ42 121
Row Address Strobe
Column Address Strobe
Power(+3.3V)
10 DQ7 38
11 DQ8 39
12
13 DQ9 41 RFU
14 DQ10 42 RFU
A10
A12
VCC
66 DQ26 94 DQ43 122 A11 150 DQ62
67 DQ27 95 DQ44 123 *A13 151 DQ63
VSS
Ground
VSS
40
68
VSS
96
VSS
124
VCC
152 VSS
NC
No Connection
Presence Detect Enable
Presence Detect
ID bit
69 DQ28 97 DQ45 125 RFU 153 DQ64
PDE
70 DQ29 98 DQ46 126
71 DQ30 99 DQ47 127
B0
VSS
154 DQ65
155 DQ66
15 DQ11 43
16 DQ12 44
VSS
PD1 - 8
ID0 - 1
OE2 72 DQ31 100 DQ48 128 RFU 156 DQ67
101 DQ49 129 *RAS3 157 VCC
46 CAS4 74 DQ32 102 VCC 130 *CAS5 158 DQ68
19 DQ14 47 *CAS6 75 DQ33 103 DQ50 131 *CAS7 159 DQ69
17 DQ13 45 RAS2 73
18
VCC
RSVD
Reserved Use
VCC
RFU
Reserved for Future Use
20 DQ15 48
21 DQ16 49
W2
VCC
76 DQ34 104 DQ51 132 PDE 160 DQ70
77 DQ35 105 DQ52 133 161 DQ71
106 DQ53 134 RSVD 162 VSS
Pins marked ¢*¢ are not used in this module.
VCC
PD & ID Table
22 DQ17 50 RSVD 78
23 51 RSVD 79
VSS
Pin
50NS
60NS
VSS
PD1 107 VSS 135 RSVD 163 PD2
PD3 108 RSVD 136 DQ54 164 PD4
PD5 109 RSVD 137 DQ55 165 PD6
24 RSVD 52 DQ18 80
25 RSVD 53 DQ19 81
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PD8
1
1
1
1
1
0
0
0
1
1
1
1
1
1
1
0
26
27
VCC
W0
54
VSS
82
PD7 110 VCC 138
ID0 111 RFU 139 DQ56 167 ID1
112 *CAS1 140 DQ57 168 VCC
VSS
166 PD8
55 DQ20 83
28 CAS0 56 DQ21 84
VCC
NOTE : A12 is used for only M372F1680EJ0/ET0-C (8K Ref.)
ID0
ID1
0
0
0
0
PD Note :PD & ID Terminals must each be pulled up through a register to VCC at the next higher
level assembly. PDs will be either open (NC) or driven to VSS via on-board buffer circuits.
ID Note : IDs will be either open (NC) or connected directly to VSS without a buffer.
PD : 0 for Vol of Drive IC & 1 for N.C
ID : 0 for Vss & 1 for N.C
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
FUNCTIONAL BLOCK DIAGRAM
RAS0
CAS0
OE0
RAS2
CAS4
OE2
W0
A0
W2
B0
A1-A11(A12)
A1-A11(A12)
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ36
DQ37
DQ38
DQ39
U0
U9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ40
DQ41
DQ42
DQ43
U1
U10
DQ0
DQ1
DQ2
DQ3
DQ8
DQ9
DQ10
DQ11
DQ0
DQ1
DQ2
DQ3
DQ44
DQ45
DQ46
DQ47
U2
U11
U12
DQ0
DQ1
DQ2
DQ3
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
DQ48
DQ49
DQ50
DQ51
U3
DQ0
DQ1
DQ2
DQ3
DQ16
DQ17
DQ18
DQ19
DQ0
DQ1
DQ2
DQ3
DQ52
DQ53
DQ54
DQ55
U4
U13
U14
DQ0
DQ1
DQ2
DQ3
DQ20
DQ21
DQ22
DQ23
DQ0
DQ1
DQ2
DQ3
DQ56
DQ57
DQ58
DQ59
U5
DQ0
DQ1
DQ2
DQ3
DQ24
DQ25
DQ26
DQ27
DQ0
DQ1
DQ2
DQ3
DQ60
DQ61
DQ62
DQ63
U6
U15
U16
DQ0
DQ1
DQ2
DQ3
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ64
DQ65
DQ66
DQ67
U7
DQ0
DQ1
DQ2
DQ3
DQ32
DQ33
DQ34
DQ35
DQ0
DQ1
DQ2
DQ3
DQ68
DQ69
DQ70
DQ71
U8
U17
NOTE : A12 is used for only M372F1680EJ0/ET0 (8K Ref.)
A0
B0
U0-U8
U9-U17
U0-U17
U0-U8
Vcc
A1-A11(A12)
W0, OE0
W2, OE2
0.1 or 0.22uF Capacitor
To all DRAMs
under each DRAM
Vss
U9-U17
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
ABSOLUTE MAXIMUM RATINGS *
Item
Symbol
Rating
Unit
Voltage on any pin relative VSS
Voltage on VCC supply relative to V SS
Storage Temperature
VIN, VOUT
VCC
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
18
V
V
°C
W
Tstg
PD
Power Dissipation
Short Circuit Output Current
IOS
50
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item
Symbol
Min
Typ
Max
Unit
3.0
0
2.0
3.6
0
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
VSS
VIH
VIL
3.3
0
-
V
V
V
V
*1
VCC+0.3
0.8
*2
-
-0.3
*1 : VCC+1.3V at pulse width£15ns, which is measured at VCC.
*2 : -1.3V at pulse width£15ns, which is measured at VSS.
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
M372F1600EJ(T)0
M372F1680EJ(T)0
Symbol
Speed
Unit
Min
Max
Min
Max
-50
-60
1980
1800
-
-
1440
1260
mA
mA
-
-
ICC1
ICC2
ICC3
Don¢t care
-
100
-
100
mA
-50
-60
-
-
1980
1800
-
-
1440
1260
mA
mA
-50
-60
-
-
1620
1440
-
-
1620
1440
mA
mA
ICC4
ICC5
ICC6
Don¢t care
-
30
-
30
mA
-50
-60
-
-
1980
1800
-
-
1980
1800
mA
mA
II(L)
IO(L)
-10
-5
10
5
-10
-5
10
5
uA
uA
Don¢t care
Don¢t care
VOH
VOL
2.4
-
-
2.4
-
-
V
V
0.4
0.4
ICC1*
ICC2
ICC3*
ICC4*
ICC5
ICC6*
I(IL)
: Operating Current * (RAS, CAS, Address cycling @tRC=min)
: Standby Current (RAS=CAS=W=VIH)
: RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min)
: Extended Data Out Mode Current * (RAS=VIL, CAS cycling : tHPC =min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min)
: Input Leakage Current (Any input 0£VIN£Vcc+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V£VOUT £Vcc)
: Output High Voltage Level (IOH = -2mA)
I(OL)
VOH
: Output Low Voltage Level (IOL = 2mA)
VOL
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL . In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
CAPACITANCE (TA = 25°C, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0, B0, A1 - A12]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0, RAS2]
Input capacitance[CAS0, CAS4]
Input/Output capacitance[DQ0 - 71]
CIN1
CIN2
CIN3
CIN4
CDQ
20
20
73
20
17
pF
pF
pF
pF
pF
-
-
-
-
-
AC CHARACTERISTICS (0°C£TA£70°C, VCC=3.3V±0.3V. See notes 1,2.)
Test condition :Vih/Vil=2.2/0.7V, Voh/Vol =2.0/0.8V, output loading CL=100pF
-50
-60
Parameter
Symbol
Unit
Note
Min
84
Max
Min
104
153
Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
tRC
128
tRWC
tRAC
tCAC
tAA
50
18
30
60
20
35
3,4,10
3,4,5,13
3,10,13
3,13
Access time from CAS
Access time from column address
CAS to output in Low-Z
8
8
8
8
tCLZ
tOLZ
tCEZ
tT
OE to output in Low-Z
3,13
Output buffer turn-off delay from CAS
Transition time(rise and fall)
RAS precharge time
8
18
50
8
18
50
6,11,13
2
1
1
30
50
13
36
8
40
60
15
38
10
18
13
10
5
tR P
RAS pulse width
10K
10K
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCS
tWCH
tW P
RAS hold time
13
13
CAS hold time
CAS pulse width
10K
32
10K
40
RAS to CAS delay time
15
10
10
5
4,13
10,13
13
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
20
25
13
5
8
13
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referenced to CAS
Read command hold referenced to RAS
Write command set-up time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
0
0
7
10
35
0
30
0
13
0
0
8
8,13
7
-2
0
-2
0
7
10
10
15
10
-2
15
7
tRWL
tCWL
tD S
13
7
13
-2
13
9,13
9,13
Data hold time
tDH
Refresh period(4K & 8K)
CAS to W delay time
64
64
tREF
tCWD
tRWD
33
68
38
82
7
RAS to W delay time
7,13
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
AC CHARACTERISTICS (0°C£TA£70°C, VCC=3.3V±0.3V. See notes 1,2.)
-50
-60
Parameter
Symbol
Unit
Note
Min
45
47
10
8
Max
Min
53
58
10
8
Max
Column address to W delay time
CAS precharge time to W delay time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS to CAS precharge time
tAWD
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
tCPWD
tCSR
tCHR
tRPC
tCPA
13
13
3
3
13
Access time from CAS precharge
Hyper page cycle time
33
40
3,13
12
20
70
7
25
77
10
60
40
15
8
tHPC
tHPRWC
tCP
Hyper page read-modify-write cycle time
CAS precharge time(Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
OE access time
12
50
35
15
8
200K
200K
tRASP
tRHCP
tWRP
tWRH
tOEA
tOED
tOEZ
tOEH
tDOH
tREZ
13
13
13
13
13
13
18
18
20
18
OE to data delay
15
8
18
8
Output buffer turn off delay time from OE
OE command hold time
5
5
Output data hold time(C-B-R refresh)
Output buffer turn off delay time from RAS
Output buffer turn off delay time from W
W to data delay
10
3
10
3
13
6,11
6,13
13
13
18
13
18
tWEZ
tWED
tOCH
tCHO
tOEP
tWPE
8
8
20
5
20
5
OE to CAS hold time
CAS hold time to OE
5
5
OE precharge time
5
5
W pulse width (Hyper page cycle)
5
5
Present Detect Read Cycle
PDE to Valid PD bit
tPD
10
7
10
7
ns
ns
PDE to PD bit Inactive
tPDOFF
2
2
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
NOTES
1. An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
8. Either tRCH or tRRH must be satisfied for a read cycle.
9.
These parameters are referenced to the CAS leading edge in
early write cycles.
2. Input voltage levels are V ih/Vil . VIH(min) and VIL (max) are ref-
erence levels for measuring timing of input signals. Transi-
tion times are measured between V IH(min) and VIL(max) and
are assumed to be 5ns for all inputs.
Operation within the tRAD(max) limit insures that tRAC(max)
can be met. tRAD (max) is specified as reference point only. If
tRAD is greater than the specified tRAD (max) limit, then
access time is controlled by tAA.
10.
3.
Measured with a load equivalent to 1 TTL loads and 100pF.
11. If RAS goes high before CAS high going, the open circuit
condition of the output is achieved byCAS high going. IfCAS
goes high before RAS high going , the open circuit condition
of the output is achieved byRAS going.
4. Operation within the tRCD(max) limit insures that tRAC (max)
can be met. tRCD(max) is specified as a reference point only.
If tRCD is greater than the specified tRCD(max) limit, then
access time is controlled exclusively by tCAC .
12. tASC ³ 6ns.
5. Assumes tha tRCD ³ tRCD(max).
13. The timing skew from the DRAM to the DIMM resulted from
the addition of buffers.
6.
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to VOH or
VOL.
7. tWCS, tRWD, tCWD, tAWD and tCPWD are not restrictive operat-
ing parameter. They are included in the data sheet as electri-
cal characteristics only. If tWCS ³ tWCS(min) the cycle is an
early write cycle and the data out pin will remain high imped-
ance for the duration of the cycle. If tRWD ³ tRWD(min), tCWD ³
tCWD(min), tAWD ³ tAWD (min) and tCPWD ³ tCPWD (min).
The cycle is a read-modify-write cycle and the data out will
contain data read from the selected cell. If neither of the
above sets of conditions is satisfied, the condition of data
out(at access time) is indeterminate.
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
READ CYCLE
tRC
tRAS
tR P
VIH -
RAS
VIL -
tCSH
tCRP
tCRP
tRCD
tRSH
VIH -
CAS
VIL -
tCAS
tRAD
tRAL
tASR
tRAH
tASC
tRCS
tCAH
VIH -
ROW
ADDRESS
COLUMN
ADDRESS
A
VIL -
tRCH
tRRH
VIH -
W
VIL -
tWEZ
tCEZ
tAA
tOEZ
VIH -
tOEA
tOLZ
OE
VIL -
tCAC
tCLZ
tREZ
tRAC
VOH -
DQ
OPEN
DATA-OUT
VOL -
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
tRP
VIH -
RAS
VIL -
tCSH
tCRP
tCRP
tRCD
tASC
tRSH
VIH -
CAS
VIL -
tCAS
tRAD
tRAL
tASR
tRAH
tCAH
VIH -
COLUMN
ADDRESS
ROW
ADDRESS
A
VIL -
tCWL
tRWL
tWCH
tWCS
VIH -
tWP
W
VIL -
VIH -
OE
VIL -
tDS
tDH
VIH -
DQ
DATA-IN
VIL -
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
tRP
VIH -
RAS
VIL -
tCSH
tCRP
tCRP
tRCD
tRSH
tCAS
VIH -
CAS
VIL -
tRAD
tASC
tRAL
tASR
tRAH
tCAH
VIH -
ROW
ADDRESS
COLUMN
ADDRESS
A
VIL -
tCWL
tRWL
VIH -
tWP
W
VIL -
VIH -
OE
tOEH
VIL -
tOED
tD S
tDH
DATA-IN
VIH -
DQ
VIL -
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
READ - MODIFY - WRITE CYCLE
tRWC
tRAS
tRP
VIH -
VIL -
RAS
CAS
tCRP
tASR
tRCD
tRSH
VIH -
VIL -
tCAS
tCSH
tRAD
tRAH
tASC
tCAH
VIH -
VIL -
ROW
ADDR
COLUMN
ADDRESS
A
tAWD
tCWD
tRWL
tCWL
VIH -
VIL -
W
tWP
tRWD
tOEA
VIH -
VIL -
OE
tOLZ
tCLZ
tCAC
tAA
tOED
tOEZ
tDS
tDH
tRAC
VI/OH -
VI/OL -
VALID
DATA-OUT
VALID
DQ
DATA-IN
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
HYPER PAGE READ CYCLE
tRP
tRASP
VIH -
VIL -
RAS
¡ó
tCSH
tRCD
tRHCP
tHPC
tCAS
tHPC
tCAS
tHPC
tCRP
tC P
tC P
tC P
tCAS
tCAS
VIH -
VIL -
CAS
tRAD
tRAH tASC
tASR
tCAH
tASC
tCAH
tASC
tCAH
tASC
tCAH
tREZ
VIH -
VIL -
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR
COLUMN
A
ADDRESS
tRRH
tRCS
tRCH
VIH -
VIL -
W
tCPA
tCAC
tCAC
tAA
tCAC
tAA
tCPA
tOCH
tAA
tCPA
tCHO
tOEP
tAA
tCAC
VIH -
VIL -
tOEA
tOEA
OE
DQ
tOEP
tOEZ
tOEA
tCAC
tDOH
tOEZ
tOEZ
tRAC
VOH -
VOL -
VALID
DATA-OUT
VALID
VALID
DATA-OUT
DATA-OUT
tOLZ
tCLZ
VALID
DATA-OUT
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
HYPER PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tR P
tRASP
VIH -
RAS
VIL -
tRHCP
¡ó
tHPC
tHPC
tRSH
tCRP
tRCD
tCP
tCP
VIH -
VIL -
tCAS
tCAS
tCAS
¡ó
CAS
tRAD
tCSH
tASC
tASR
tRAH
tCAH
tASC
tCAH
tASC
tCAH
¡ó
¡ó
VIH -
VIL -
COLUMN
ADDRESS
COLUMN
ROW
ADDR.
COLUMN
ADDRESS
A
ADDRESS
tWCS
tWCH
tWCS
tWP
tWCH
tWCS
tWCH
tW P
¡ó
VIH -
VIL -
tWP
W
tCWL
tCWL
tCWL
tRWL
¡ó
¡ó
VIH -
VIL -
OE
tD S
tDH
tDS
tDH
tD S
tDH
¡ó
¡ó
VIH -
VIL -
VALID
DATA-IN
VALID
DATA-IN
VALID
DATA-IN
DQ
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
HYPER PAGE READ-MODIFY-WRITE CYCLE
tRP
tRASP
VIH -
VIL -
tCSH
tRSH
RAS
CAS
tHPRWC
tCRP
tCRP
tRCD
tC P
VIH -
VIL -
tCAS
tCAS
tRAL
tRAD
tRAH
tCAH
tCAH
tASR
tASC
tASC
VIH -
VIL -
ROW
ADDR
COL.
COL.
ADDR
A
W
ADDR
tRWL
tCWL
tRCS
tCWL
VIH -
VIL -
tWP
tWP
tCWD
tAWD
tRWD
tCWD
tAWD
tCPWD
VIH -
VIL -
tOEA
tOEA
OE
tOED
tOED
tCAC
tCAC
tDH
tDH
tAA
tAA
tOEZ
tOEZ
tDS
tD S
tRAC
VI/OH -
VI/OL -
DQ
tCLZ
tCLZ
VALID
tOLZ
tOLZ
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-IN
DATA-IN
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
HYPER PAGE READ AND WRITE MIXED CYCLE
tR P
tRASP
READ(tCPA)
VIH -
VIL -
READ( tCAC)
WRITE
READ(tAA)
RAS
tHPC
tHPC
tHPC
tCAS
tCP
tCP
tCP
VIH -
VIL -
tCAS
tCAS
tCAS
tCAH
CAS
tRAD
tASR
tRAH
tASC
tCAH
tCAH
tASC
tASC
tCAH
tASC
VIH -
VIL -
ROW
ADDR
COLUMN
COLUMN
ADDRESS
COL.
ADDR
COL.
A
ADDRESS
ADDR
tRCS
tRCH
tRCS
tRCH
tWCH
tRCH
VIH -
VIL -
tWCS
W
tWPE
tCPA
tCLZ
tWED
VIH -
VIL -
OE
tDH
tD S
tOEA
tWEZ
tCAC
tAA
tRAC
tAA
tREZ
tWEZ
VI/OH -
VI/OL -
VALID
DATA-OUT
VALID
DATA-OUT
VALID
VALID
DATA-OUT
DQ
DATA-IN
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
RAS - ONLY REFRESH CYCLE*
NOTE : W, OE, DIN = Don¢t care
DOUT = OPEN
tRC
tRP
VIH -
RAS
VIL -
tRAS
tRPC
tCRP
tCRP
VIH -
CAS
VIL -
tASR
tRAH
VIH -
VIL -
ROW
ADDR
A
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE , A = Don¢t care
tRC
tRP
tR P
tRAS
VIH -
RAS
VIL -
tRPC
tRPC
tC P
tCSR
VIH -
tCHR
CAS
VIL -
tWRP
tWRH
VIH -
W
VIL -
tCEZ
VOH -
DQ
OPEN
VOL -
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
HIDDEN REFRESH CYCLE ( READ )
tRC
tRC
tRAS
tRP
tR P
tRAS
VIH -
VIL -
RAS
CAS
tCRP
tRCD
tRSH
tCHR
VIH -
VIL -
tRAD
tASR
tRAH
tASC
tCAH
COLUMN
VIH -
VIL -
ROW
ADDRESS
A
W
ADDRESS
tWRH
tWRP
tRCS
tRRH
VIH -
VIL -
tAA
VIH -
VIL -
tOEA
OE
tOLZ
tCAC
tCEZ
tREZ
tCLZ
tRAC
tWEZ
tOEZ
VOH -
VOL -
DQ
DATA-OUT
OPEN
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : D OUT = OPEN
tRC
tRAS
tRC
tRAS
tRP
tRP
VIH -
RAS
VIL -
tCRP
tRCD
tRSH
tCHR
VIH -
CAS
VIL -
tRAD
tASR
tRAH
tASC
tCAH
VIH -
ROW
ADDRESS
COLUMN
ADDRESS
A
VIL -
tWRH
tWRP
tWCS
tWCH
VIH -
tWP
W
VIL -
VIH -
OE
VIL -
tDS
tDH
DATA-IN
VIH -
DQ
VIL -
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
tRP
VIH -
VIL -
tRAS
RAS
tCPT
tRSH
tCSR
VIH -
VIL -
tCHR
tCAS
CAS
tRAL
tASC
tCAH
VIH -
VIL -
COLUMN
ADDRESS
A
tRRH
tRCH
tAA
READ CYCLE
tWRP
tWRH
tRCS
tCAC
VIH -
W
VIL -
VIH -
OE
VIL -
tWEZ
tCEZ
tREZ
tOEA
tOEZ
DATA-OUT
tCLZ
VOH -
DQ
VOL -
WRITE CYCLE
tRWL
tWRP
tWRH
tCWL
VIH -
W
tWCS
tWCH
tWP
VIL -
VIH -
OE
VIL -
tD S
tDH
DATA-IN
VIH -
DQ
VIL -
READ-MODIFY-WRITE
tAWD
tCWL
tRWL
tWP
tWRP
tWRH
tRCS
tCWD
VIH -
W
tCAC
tOEA
VIL -
tAA
VIH -
OE
tOED
tOEZ
VIL -
tDH
tCLZ
tDS
VI/OH -
DQ
VI/OL -
VALID
DATA-OUT
VALID
DATA-IN
Don¢t care
Undefined
NOTE : This timing diagram is applied to all devices besides 64M DRAM based modules.
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE, A = Don¢t care
tRP
tRASS
tRPS
VIH -
RAS
VIL -
tRPC
tCP
tRPC
tCHS
tCSR
VIH -
CAS
VIL -
tCEZ
VOH -
DQ
OPEN
VOL -
VIH -
W
VIL -
tWRP
tWRH
TEST MODE IN CYCLE
NOTE : OE , A = Don¢t care
tRC
tRP
tRP
tRAS
VIH -
RAS
VIL -
tRPC
tC P
tRPC
tCSR
tWTS
VIH -
VIL -
tCHR
CAS
W
tWTH
VIH -
VIL -
tCEZ
VOH -
VOL -
DQ
OPEN
Don¢t care
Undefined
REV. 0.0 Apr. 2001
DRAM MODULE
M372F160(8)0EJ(T)0-C
Units : Inches (millimeters)
0.054
PACKAGE DIMENSIONS
5.250
(133.350)
(1.372)
0.118
(3.000)
5.014
(127.350)
R 0.079
(R 2.000)
0.157±0.004
(4.000±0.100)
B
C
A
.118DIA±.004
0.250
(6.350)
0.250
(6.350)
(3.000DIA ±.100)
0.350
2.150
1.450
(8.890)
(36.830)
(54.61)
.450
(11.430)
4.550
(115.57)
( Front view )
0.150Max
(3.81Max)
TSOPII
0.350Max
(8.89Max)
SOJ
0.050±0.0039
(1.270±0.10)
( Back view )
0.250
(6.350)
0.250
(6.350)
0.039 ±.002
(1.000±.050)
0.1230±.0050
(3.125±.125)
0.1230±.0050
(3.125±.125)
0.008 ±.0.006
(0.200±.0.150)
0.050
(1.270)
0.079±.0040
(2.000±.100)
0.079±.0040
(2.000±.100)
Detail A
Detail B
Detail C
Tolerances : ±.005(.13) unless otherwise specified
The used device is 16Mx4 DRAM with EDO mode, SOJ (400 mil) or TSOPII.
DRAM Part No. : M372F1600EJ(T)0 - K4E640412E-J, K4E640412E-T.
M372F1680EJ(T)0 - K4E660412E-J, K4E660412E-T.
REV. 0.0 Apr. 2001
相关型号:
©2020 ICPDF网 联系我们和版权申明