M390S2858BTU-C1L [SAMSUNG]
Synchronous DRAM Module, 128MX72, 6ns, CMOS, DIMM-168;![M390S2858BTU-C1L](http://pdffile.icpdf.com/pdf2/p00256/img/icpdf/M390S2858BTU_1548438_icpdf.jpg)
型号: | M390S2858BTU-C1L |
厂家: | ![]() |
描述: | Synchronous DRAM Module, 128MX72, 6ns, CMOS, DIMM-168 时钟 动态存储器 内存集成电路 |
文件: | 总13页 (文件大小:249K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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M390S2858BTU
PC133/PC100 Registered DIMM
Revision History
Revision 0.0 (Sep. 26, 2000)
- PC133 first published
Revision 0.1 (Sep. 26, 2000)
- Add PC100 specification.
Revision 0.2 (Feb. 14, 2001)
- Change Functional Block Diagram
- Eliminate "Preliminary"
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
M390S2858BTU SDRAM DIMM
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD
FEATURE
• Performance range
GENERAL DESCRIPTION
The Samsung M390S2858BTU is a 128M bit x 72 Synchro-
nous Dynamic RAM high density memory module. The Sam-
sung M390S2858BTU consists of eighteen CMOS Stacked
128Mx4 bit Synchronous DRAMs in two TSOP-II 400mil pack-
ages, two 18-bits Drive ICs for input control signal, one PLL in
24-pin TSSOP package for clock and one 2K EEPROM in 8-
pin TSSOP package for Serial Presence Detect on a 168-pin
glass-epoxy substrate. Two 0.1uF decoupling capacitors are
mounted on the printed circuit board in parallel for each
SDRAM. The M390S2858BTU is a Dual In-line Memory Mod-
ule and is intented for mounting into 168-pin edge connector
sockets.
Part No.
Max Freq. (Speed)
133MHz (7.5ns @ CL=3)
100MHz (10ns @ CL=2)
100MHz (10ns @ CL=3)
M390S2858BTU-C75
M390S2858BTU-C1H
M390S2858BTU-C1L
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4 , 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Serial presence detect with EEPROM
• PCB : Height (1,200mil), double sided component
Synchronous design allows precise cycle control with the use
of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable laten-
cies allows the same device to be useful for a variety of high
bandwidth, high performance memory system applications.
PIN CONFIGURATIONS (Front side/back side)
PIN NAMES
Pin
Pin Front Pin Front
Front Pin Back Pin Back Pin Back
Pin Name
A0 ~ A12
BA0 ~ BA1
DQ0 ~ DQ63
CB0 ~ CB7
CLK0
Function
Address input (Multiplexed)
Select bank
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
1
2
3
4
5
6
7
8
9
10
11
12
13
VSS
DQ0
DQ1
DQ2
DQ3
VDD
DQ4
DQ5
DQ6
DQ7
DQ8
VSS
29 DQM1
DQ18 85
VSS
113 DQM5 141 DQ50
30
31
32
33
34
35
36
37
CS0
DU
VSS
A0
A2
A4
DQ19 86 DQ32 114 CS1 142 DQ51
Data input/output
Check bit (Data-in/data-out)
Clock input
VDD
87 DQ33 115 RAS 143
VDD
DQ20 88 DQ34 116
NC 89 DQ35 117
*VREF 90 118
*CKE1 91 DQ36 119
92 DQ37 120
DQ21 93 DQ38 121
VSS
A1
A3
A5
A7
A9
144 DQ52
145
NC
VDD
146 *VREF
147 REGE
CKE0
Clock enable input
Chip select input
Row address strobe
Colume address strobe
Write enable
A6
A8
VSS
148
VSS
CS0 ~ CS3
RAS
149 DQ53
38 A10/AP
DQ22 94 DQ39 122 BA0 150 DQ54
CAS
39
40
41
BA1
VDD
VDD
DQ23 95 DQ40 123
96 124
A11
VDD
151 DQ55
152
WE
VSS
VSS
VSS
DQ9
DQ24 97 DQ41 125 *CLK1 153 DQ56
DQM0 ~ 7
VDD
DQM
14 DQ10 42 CLK0
DQ25 98 DQ42 126
DQ26 99 DQ43 127
A12
VSS
154 DQ57
155 DQ58
Power supply (3.3V)
Ground
15 DQ11 43
16 DQ12 44
17 DQ13 45
VSS
DU
CS2
VSS
DQ27 100 DQ44 128 CKE0 156 DQ59
VDD 101 DQ45 129 CS3 157
DQ28 102 VDD 130 DQM6 158 DQ60
VDD
*VREF
Power supply for reference
Register enable
Serial data I/O
18
VDD
46 DQM2
REGE
SDA
19 DQ14 47 DQM3
DQ29 103 DQ46 131 DQM7 159 DQ61
DQ30 104 DQ47 132 *A13 160 DQ62
20 DQ15 48
DU
VDD
NC
SCL
Serial clock
21
22
23
24
25
26
27
CB0
CB1
VSS
NC
NC
VDD
WE
49
50
51
52
53
54
DQ31 105 CB4 133
VDD
NC
NC
161 DQ63
162
163 *CLK3
NC
137 CB7 165 **SA0
138 166 **SA1
VSS
106 CB5 134
VSS
SA0 ~ 2
DU
Address in EEPROM
Don¢t use
NC
*CLK2 107
VSS
NC
NC
135
CB2
CB3
VSS
NC
NC
108
109
136 CB6 164
NC
No connection
**SDA 110
VDD
VSS
*
These pins are not used in this module.
** These pins should be NC in the system
55 DQ16
**SCL 111 CAS 139 DQ48 167 **SA2
VDD 112 DQM4 140 DQ49 168
28 DQM0 56 DQ17
VDD
which does not support SPD.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
PIN CONFIGURATION DESCRIPTION
Pin
Name
System clock
Input Function
CLK
CS
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Chip select
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE
Clock enable
CKE should be enabled 1CLK+tss prior to valid command.
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA12, Column address : CA0 ~ CA9, CA11
A0 ~ A12
BA0 ~ BA1
RAS
Address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Bank select address
Row address strobe
Column address strobe
Write enable
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
CAS
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
WE
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
DQM0 ~ 7
Data input/output mask
The device operates in the transparent mode when REGE is low. When REGE is high,
the device operates in the registered mode. In registered mode, the Address and con-
trol inputs are latched if CLK is held at a high or low logic level. the inputs are stored in
the latch/flip-flop on the rising edge of CLK. REGE is tied to VDD through 10K ohm
Resistor on PCB. So if REGE of module is floating, this module will be operated as reg-
istered mode.
REGE
Register enable
DQ0 ~ 63
CB0 ~ 7
VDD/VSS
Data input/output
Check bit
Data inputs/outputs are multiplexed on the same pins.
Check bits for ECC.
Power supply/ground
Power and ground for the input buffers and the core logic.
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
FUNCTIONAL BLOCK DIAGRAM
BCS1
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
PCLK0
BCS0
B0CKE0
D0L
D1L
D2L
D3L
D0U
D9L
D9
B0A0~B0A12,B0BA0~1, B0RAS, B0CAS, B0WE
BDQM4
BDQM0
DQ0~3
DQ32~35
10
W
W
10W
PCLK1
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
D1U
D10L
D11L
D12L
D10
D11
D12
10
W
DQ4~7
DQ8~11
DQ12~15
DQ36~39
10
PCLK2
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
D2U
BDQM1
BDQM5
DQ40~43
10
PCLK3
W
10W
D3U
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
10
W
DQ44~47
10W
PCLK4
CLK
CS
CLK
CS
CLK
CS
CLK
CS
D4L
D4U
D13L
D13
CKE
CKE
CKE
CKE
Add,CTL
DQM
DQ0~3
Add,CTL
DQM
DQ0~3
Add,CTL
DQM
DQ0~3
Add,CTL
DQM
DQ0~3
10W
CB4~7
CB0~3
10W
PCLK5
BCS2
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
D5L
D6L
D7L
D8L
D14L
D15L
D16L
D17L
D5U
D14
D15
D16
D17
BDQM6
BDQM2
DQ48~51
DQ16~19
10
W
10
W
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
PCLK6
D6U
DQ52~55
DQ20~23
DQ24~27
10
W
10
W
PCLK7
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
CLK
CS
CKE
Add,CTL
DQM
DQ0~3
D7U
BDQM7
BDQM3
DQ56~59
10
W
10
W
PCLK8
BCS2
CLK
CS
CLK
CS
CLK
CS
CLK
CS
D8U
B1CKE0
CKE
CKE
CKE
CKE
B1A0~B1A12,B1BA0~1, B1RAS, B1CAS, B1WE
Add,CTL
DQM
DQ0~3
Add,CTL
DQM
DQ0~3
Add,CTL
DQM
DQ0~3
Add,CTL
DQM
DQ0~3
BDQM0
BDQM7
DQ28~31
DQ60~63
10W
10W
BCS3
VSS
VDD
A0~A12,BA0~1, RAS, CAS
CKE0
B0A0~B0A12,B0BA0~1, B0RAS, B0CAS
74ALVCF162835
IY0
PCLK9
B0CKE0
B1CKE0
10W
VDD
10kW
IY1
IY2
IY3
IY4
IY5
IY6
IY7
IY8
IY9
PCLK5
PCLK6
PCLK7
PCLK8
PCLK0
PCLK1
PCLK2
PCLK3
PCLK4
CLK1,2,3
12pF
PCLK9
REGE
CDCF2510
OE
LE
74ALVCF162835
10W
12pF
B1A0~B1A12,B1BA0~1, B1RAS, B1CAS
CLK
FIBIN
CLK0
FBOUT
*1
Cb
Note
OE
OE
1. The actual values of Cb will depend upon the PLL chosen.
LE
74ALVCF162835
Serial PD
SCL
B0WE,B0CKE1
B1WE,B1CKE1
WE
WP
SDA
A0 A1 A2
47KW
DQM0~7,CS0~3
BDQM0~7, BCS0~3
SA0 SA1 SA2
LE
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
STANDARD TIMING DIAGRAM WITH PLL & REGISTER (CL=2, BL=4)
*2
REG
*1
DOUT
Control Signal(RAS,CAS,WE)
*3
*1. Register Input
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLK
RAS
CAS
WE
*2. Register Output
RAS
td
tr
td
tr
CAS
WE
*3. SDRAM
CAS latency(refer to *1)
=2CLK+1CLK
1CLK
tSAC
tRAC(refer to *1)
tRAC(refer to *2)
Qa0 Qa1 Qa2 Qa3
Db0 Db1 Db2 Db3
DQ
CAS latency(refer to *2)
=2CLK
tRDL
Row Active
Precharge
Command
Write
Command
Row Active
Read
Command
Precharge
Command
td, tr = Delay of register (74ALVCF162835)
Notes : 1. In case of module timing, command cycles delayed 1CLK with respect to external input timing at the address and input signal
because of the buffering in register . Therefore, Input/Output signals of read/write function should be
issued 1CLK earlier as compared to Unbuffered DIMMs.
2. DIN is to be issued 1clock after write command in external timing because DIN is issued directly to module.
: Don¢t care
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
36
Unit
V
V
°C
W
Power dissipation
PD
Short circuit current
IOS
50
mA
Note :
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Supply voltage
Symbol
VDD
VIH
Min
3.0
2.0
-0.3
2.4
-
Typ
Max
Unit
V
Note
3.3
3.6
Input high voltage
Input low voltage
3.0
VDDQ+0.3
V
1
VIL
0
-
0.8
-
V
2
Output high voltage
Output low voltage
Input leakage current
VOH
VOL
ILI
V
IOH = -2mA
IOL = 2mA
3
-
0.4
10
V
-10
-
uA
Notes :
1. VIH (max) = 5.6V AC. The overshoot voltage duration is £ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is £ 3ns.
3. Any input 0V £ VIN £ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A12)
CIN1
CIN2
-
-
-
-
-
-
-
-
-
15
15
15
20
15
15
15
22
22
pF
pF
pF
pF
pF
pF
pF
pF
pF
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
CIN3
Input capacitance (CLK0)
CIN4
Input capacitance (CS0, CS2)
CIN5
Input capacitance (DQM0 ~ DQM7)
Input capacitance (BA0 ~ BA1)
Data input/output capacitance (DQ0 ~ DQ63)
Data input/output capacitance (CB0 ~ CB7)
CIN6
CIN7
COUT
COUT1
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Version
Parameter
Symbol
Test Condition
Unit Note
-75
-1H
-1L
Burst length = 1
tRC ³ tRC(min)
IO = 0 mA
Operating current
(One bank active)
ICC1
3,200 3,020 3,020
mA
mA
1,3
3
ICC2P
CKE £ VIL(max), tCC = 10ns
422
74
Precharge standby current in
power-down mode
ICC2PS
CKE & CLK £ VIL(max), tCC = ¥
CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2N
926
506
Precharge standby current in
non power-down mode
mA
mA
3
3
CKE ³ VIH(min), CLK £ VIL(max), tCC =¥
Input signals are stable
ICC2NS
ICC3P
CKE £ VIL(max), tCC = 10ns
566
218
Active standby current in
power-down mode
ICC3PS
CKE & CLK £ VIL(max), tCC = ¥
CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3N
1,430
902
mA
mA
3
3
Active Standby current in
non power-down mode
CKE ³ VIH(min), CLK £ VIL(max), tCC = ¥
Input signals are stable
ICC3NS
IOL = 0mA
Page burst
4 Banks activated
tCCD=2CLK
Operating current
(Burst mode)
ICC4
3,560 3,110 3,110
mA
1,3
Refresh current
ICC5
ICC6
tRC ³ tRC(min)
CKE £ 0.2V
5,000 4,820 4,820
458
mA
mA
2,3
3
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 2 Drive ICs.
4. Unless otherwise noticed, Input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)
Parameter
AC input levels (Vih/Vil)
Value
2.4/0.4
1.4
Unit
V
Input timing measurement reference level
Input rise and fall time
V
tr/tf = 1/1
1.4
ns
V
Output timing measurement reference level
Output load condition
See Fig. 2
3.3V
Vtt = 1.4V
1200W
50W
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Output
Output
Z0 = 50W
50pF
50pF
870W
(Fig. 1) DC output load circuit
(Fig. 2) AC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Version
Parameter
Symbol
Unit
-1L
Note
-75
15
20
20
45
-1H
Row active to row active delay
RAS to CAS delay
tRRD(min)
tRCD(min)
tRP(min)
20
20
20
20
50
ns
ns
1
1
1
1
20
Row precharge time
20
ns
tRAS(min)
tRAS(max)
tRC(min)
50
ns
Row active time
100
us
Row cycle time
65
70
70
ns
1
2,5
5
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
tRDL(min)
tDAL(min)
tCDL(min)
tBDL(min)
tCCD(min)
2
CLK
-
2 CLK + 20 ns
1
1
1
2
1
CLK
CLK
CLK
2
2
Col. address to col. address delay
3
CAS latency=3
Number of valid output data
ea
4
-
-
Notes :
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
-75
-1H
-1L
Parameter
Symbol
tCC
Unit
ns
Note
1
Min
7.5
-
Max
Min
10
Max
Min
10
Max
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CLK cycle time
1000
1000
1000
10
12
5.4
-
6
6
6
7
CLK to valid
output delay
tSAC
ns
1,2
1,2
3
-
3
3
3
3
2
1
1
3
3
3
3
2
1
1
Output data
hold time
tOH
ns
CLK high pulse width
CLK low pulse width
Input setup time
tCH
tCL
2.5
2.5
1.5
0.8
1
ns
ns
ns
ns
ns
3
3
3
3
2
tSS
tSH
tSLZ
Input hold time
CLK to output in Low-Z
CAS latency=3
CAS latency=2
5.4
-
6
6
6
7
CLK to output
in Hi-Z
tSHZ
ns
1
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
SIMPLIFIED TRUTH TABLE
A12,A11,
A9 ~ A0
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM BA0,1
A10/AP
Note
Command
Register
Refresh
Mode register set
Auto refresh
H
X
H
L
L
L
L
L
X
OP code
1,2
3
H
L
L
L
L
H
X
X
X
X
Entry
3
Self
L
H
L
H
X
L
H
X
H
H
X
H
3
refresh
Exit
H
3
Bank active & row addr.
H
H
X
X
X
X
V
V
Row address
Column
address
(A0~A9, A11)
Read &
column address
Auto precharge disable
Auto precharge enable
Auto precharge disable
Auto precharge enable
L
H
L
4
4,5
4
L
L
H
H
L
L
H
L
Column
address
(A0~A9, A11)
Write &
Column Address
H
X
X
V
H
X
L
4,5
6
Burst stop
Precharge
H
H
X
X
L
L
H
L
H
H
L
L
X
X
Bank selection
All banks
V
X
X
H
H
L
X
V
X
X
H
X
V
X
V
X
X
H
X
V
X
V
X
X
H
X
V
Entry
H
L
X
Clock suspend or
active power down
X
X
Exit
L
H
L
X
H
L
X
X
Entry
H
Precharge power down mode
H
L
Exit
L
H
X
X
DQM
H
H
V
X
X
X
7
H
L
X
H
X
H
X
H
No operation command
(V=Valid, X=Don¢t care, H=Logic high, L=Logic low)
Notes :
1. OP Code : Operand code
A0 ~ A12 & BA0 ~ BA1 : Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 clock cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
PACKAGE DIMENSIONS
Units : Inches (Millimeters)
5.250
(133.350)
0.054
(1.372)
R 0.079
(R 2.000)
5.014
0.118
(127.350)
(3.000)
0.157 ± 0.004
(4.000 ± 0.100)
PLL
REG
REG
B
C
A
.118DIA ± 0.004
(3.000DIA ± 0.100)
0.250
(6.350)
0.250
(6.350)
0.350
(8.890)
1.450
(36.830)
2.150
(54.61)
.450
(11.430)
4.550
(115.57)
0.150 Max
(3.81 Max)
REG
0.050 ± 0.0039
(1.270 ± 0.10)
0.250
(6.350)
0.250
(6.350)
0.039 ± 0.002
(1.000 ± 0.050)
0.123 ± 0.005
(3.125 ± 0.125)
0.123 ± 0.005
0.008 ± 0.006
(3.125 ± 0.125)
(0.200 ± 0.150)
0.050
(1.270)
0.079 ± 0.004
(2.000 ± 0.100)
0.079 ± 0.004
(2.000 ± 0.100)
Detail A
Detail B
Detail C
Tolerances : ± 0.005(.13) unless otherwise specified
SDRAM Part No. : K4S560632B-TC75/TC1H/TC1L
- The used device is stacked 128Mx4 SDRAM
- Stakteks’ stacking technology is Samsungs’ stacking technology of choice
This module is based on JEDEC PC133 Specification
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
M390S2858BTU-C75/C1H/C1L
•Organization : 128MX72
•Composition : 128MX4 * 18ea
•Used component part # : K4S560632B-TC75/TC1H/TC1L
•# of banks in module : 2 Rows
•# of banks in component : 4 banks
•Feature : 1,200 mil height & double sided
•Refresh : 8K/64ms
•Contents :
Function Supported
Hex value
-1H
Byte #
Function described
Note
-75
-1H
128bytes
256bytes (2K-bit)
SDRAM
13
-1L
-75
-1L
0
1
# of bytes written into serial memory at module manufacturer
Total # of bytes of SPD memory device
Fundamental memory type
80h
08h
04h
0Dh
0Bh
02h
48h
00h
01h
A0h
60h
02h
82h
04h
04h
01h
8Fh
04h
06h
01h
01h
2
3
# of row address on this assembly
1
1
4
# of column address on this assembly
# of module Rows on this assembly
Data width of this assembly
11
5
2 Rows
72 bits
-
6
7
...... Data width of this assembly
8
Voltage interface standard of this assembly
SDRAM cycle time from clock @CAS latency of 3
SDRAM access time from clock @CAS latency of 3
DIMM configuration type
LVTTL
10ns
9
7.5ns
5.4ns
10ns
6ns
75h
54h
A0h
60h
2
2
10
11
12
13
14
15
16
17
18
19
20
6ns
ECC
Refresh rate & type
7.8us, support self refresh
Primary SDRAM width
x4
x4
Error checking SDRAM width
Minimum clock delay for back-to-back random column address
SDRAM device attributes : Burst lengths supported
SDRAM device attributes : # of banks on SDRAM device
SDRAM device attributes : CAS latency
SDRAM device attributes : CS latency
SDRAM device attributes : Write latency
tCCD = 1CLK
1, 2, 4, 8 & full page
4 banks
3
2 & 3
0 CLK
0 CLK
2 & 3
04h
06h
Registered/Buffered DQM,
address & control inputs and
On-card PLL
21
22
SDRAM module attributes
1Fh
0Eh
+/- 10% voltage tolerance,
Burst Read Single bit Write
precharge all, auto precharge
SDRAM device attributes : General
23
24
25
26
27
28
29
30
31
32
33
34
SDRAM cycle time @CAS latency of 2
SDRAM access time @CAS latency of 2
SDRAM cycle time @CAS latency of 1
SDRAM access time @CAS latency of 1
Minimum row precharge time (=tRP)
Minimum row active to row active delay (tRRD)
Minimum RAS to CAS delay (=tRCD)
Minimum activate precharge time (=tRAS)
Module Row density
-
10ns
12ns
7ns
00h
00h
A0h
60h
00h
00h
14h
14h
14h
32h
80h
20ns
10ns
20ns
C0h
70h
2
2
2
2
-
6ns
-
-
20ns
20ns
15ns
20ns
45ns
20ns
20ns
20ns
50ns
14h
0Fh
14h
2Dh
14h
14h
14h
32h
20ns
20ns
50ns
2 Rows of 512MB
Command and Address signal input setup time
Command and Address signal input hold time
Data signal input setup time
1.5ns
0.8ns
1.5ns
2ns
1ns
2ns
2ns
1ns
2ns
15h
08h
15h
20ns
10ns
20ns
Rev. 0.2 Feb. 2001
M390S2858BTU
PC133/PC100 Registered DIMM
Function Supported
Hex value
-1H
Byte #
Function described
Data signal input hold time
Note
-75
0.8ns
-1H
1ns
-
-1L
1ns
-75
-1L
35
08h
10h
10h
36~61 Superset information (maybe used in future)
00h
SPD data revision code
62
JEDEC Current release intel
02h
2Bh
12h
12h
D4h
2
spd 1.2A
63
64
Checksum for bytes 0 ~ 62
-
A4h
CEh
00h
01h
4Dh
33h
20h
39h
30h
53h
32h
38h
35h
38h
42h
54h
55h
2Dh
43h
31h
1
1
Manufacturer JEDEC ID code
Samsung
65~71 ...... Manufacturer JEDEC ID code
Samsung
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
Manufacturing location
Onyang Korea
Manufacturer part # (Memory module)
Manufacturer part # (DIMM Configuration)
Manufacturer part # (Data bits)
M
3
Blank
9
2
2
...... Manufacturer part # (Data bits)
...... Manufacturer part # (Data bits)
Manufacturer part # (Mode & operating voltage)
Manufacturer part # (Module depth)
...... Manufacturer part # (Module depth)
Manufacturer part # (Refresh, #of banks in Comp. & Interface)
Manufacturer part # (Composition component)
Manufacturer part # (Component revision)
Manufacturer part # (Package type)
Manufacturer part # (PCB revision & type)
Manufacturer part # (Hyphen)
0
S
2
8
5
8
B
T
U
" - "
C
Manufacturer part # (Power)
Manufacturer part # (Minimum cycle time)
7
5
1
37h
35h
31h
4Ch
89
90
91
92
93
94
Manufacturer part # (Minimum cycle time)
Manufacturer part # (TBD)
H
L
48h
20h
55h
42h
-
2
2
2
2
Blank
Manufacturer revision code (For PCB)
...... Manufacturer revision code (For component)
Manufacturing date (Week)
U (Low Profile)
B-die (3rd Gen.)
-
Manufacturing date (Year)
-
-
95~98 Assembly serial #
-
-
99~12 Manufacturer specific data (may be used in future)
Undefined
100MHz
-
126
127
Reserved
64h
8Fh
-
Reserved
Detailed 100MHz Information
Undefined
85h
8Dh
128+
Unused storage locations
Note :
1. The row select address is excluded in counting the total # of addresses.
2. This value is based on the component specification.
3. These bytes are programmed by code of Date Week & Date Year with BCD format.
4. These bytes are programmed by Samsungs’ own Assembly Serial # system. All modules may have different unique serial #.
5. These bytes are Undefined and can be used for Samsungs’ own purpose.
Rev. 0.2 Feb. 2001
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