MJD30-1 [SAMSUNG]

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3;
MJD30-1
型号: MJD30-1
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

放大器 晶体管
文件: 总2页 (文件大小:80K)
下载:  下载PDF数据表文档文件

MJD3055

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

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173 FAIRCHILD

MJD3055

COMPLEMENTARY SILICON POWER TRANSISTORS

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49 STMICROELECTR

MJD3055

Complementary Power Transistors

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103 ONSEMI

MJD3055

SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS

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139 MOTOROLA

MJD3055

COMPLEMENTARY POWER TRANSISTORS

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59 STMICROELECTR

MJD3055

Complementary Power Transistors DPAK For Surface Mount Applications

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204 ONSEMI

MJD3055-1

SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS

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27 MOTOROLA

MJD3055-1

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

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0 MOTOROLA

MJD3055G

Complementary Power Transistors DPAK For Surface Mount Applications

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36 ONSEMI

MJD3055G

Complementary Power Transistors

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34 ONSEMI

MJD3055T4

Complementary Power Transistors DPAK For Surface Mount Applications

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42 ONSEMI

MJD3055T4

SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS

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37 MOTOROLA

MJD3055T4G

Complementary Power Transistors DPAK For Surface Mount Applications

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71 ONSEMI

MJD3055T4G

Complementary Power Transistors

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34 ONSEMI

MJD3055TF

暂无描述

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0 ONSEMI