MP18R1624EF0-CT9 [SAMSUNG]

Rambus DRAM Module, 64MX18, CMOS;
MP18R1624EF0-CT9
型号: MP18R1624EF0-CT9
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Rambus DRAM Module, 64MX18, CMOS

动态存储器 内存集成电路
文件: 总16页 (文件大小:516K)
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MP18R1628DF0-CM8

Rambus DRAM Module, 128MX18, CMOS

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0 SAMSUNG

MP18R1628DF0-CT9

Rambus DRAM Module, 128MX18, CMOS

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0 SAMSUNG

MP18R1628EF0-CM8

Rambus DRAM Module, 128MX18, CMOS

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0 SAMSUNG

MP18R1628EF0-CT9

Rambus DRAM Module, 128MX18, CMOS

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0 SAMSUNG

MP-19.8304MHZ

Parallel - Fundamental Quartz Crystal, 9.8304MHz Nom, PACKAGE-2

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0 MTRONPTI

MP1906

80V, Half-Bridge, Gate Driver

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123 MPS

MP1906DS

80V, Half-Bridge, Gate Driver

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76 MPS

MP1907

100V, 2.5A, High Frequency Half-bridge Gate Driver

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600 MPS

MP1907GQ

100V, 2.5A, High Frequency Half-bridge Gate Driver

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810 MPS

MP-191064-10-8A

Label format - Old format order code cross reference

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30 MACOM

MP-191114-15-8A

Label format - Old format order code cross reference

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16 MACOM

MP1921A

100V, 2.5A, High Frequency Half-Bridge Gate Driver

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4 MPS

MP1921HN-A

100V, 2.5A, High Frequency Half-Bridge Gate Driver

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0 MPS

MP1921HQ-A

100V, 2.5A, High Frequency Half-Bridge Gate Driver

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1 MPS

MP1921HQE-A

100V, 2.5A, High Frequency Half-Bridge Gate Driver

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0 MPS