MR18R1622DF0-CM8 [SAMSUNG]
Rambus DRAM Module, 32MX18, CMOS, RIMM-184;
| 型号： | MR18R1622DF0-CM8 |
| 厂家： | 
SAMSUNG |
| 描述： | Rambus DRAM Module, 32MX18, CMOS, RIMM-184 动态存储器 |
| 文件： | 总16页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy.
* Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM Module Datasheet
Version 1.0 July 2002
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
(16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V
(16Mx18)*2(4/8/16)pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
Key Timing Parameters/Part Numbers
Overview
The RIMM module is a general purpose high- performance
memory module suitable for use in a broad range of applica-
tions including computer memory, personal computers,
workstations and other applications where high bandwidth
and low latency are required.
The following table lists the frequency and latency bins
available for RIMM modules.
Table 1: Part Number by Freq. & Latency
Speed
The RIMM module consists of 256/288Mb RDRAM
devices. These are extremely high-speed CMOS DRAMs
organized as 16M words by 16 or 18 bits. The use of
Rambus Signaling Level (RSL) technology permits up to
1066 MHz transfer rates while using conventional system
and board design technologies. RDRAM devices are capable
of sustained data transfers at 0.94 ns per two bytes (7.5ns per
16 bytes).
t
RAC
I/O
Freq.
(MHz)
Organization
Part Number
(Row
Access
Time) ns
Bin
-CT9
-CN9
1066
1066
1066
800
32P
32
MR16/18R1622DF0-CT9
MR16/18R1622DF0-CN9
MR16/18R1622DF0-CM9
MR16/18R1622DF0-CM8
MR16/18R1622DF0-CK8
MR16/18R1624DF0-CT9
MR16/18R1624DF0-CN9
MR16/18R1624DF0-CM9
MR16/18R1624DF0-CM8
MR16/18R1624DF0-CK8
MR16/18R1628DF0-CT9
MR16/18R1628DF0-CN9
MR16/18R1628DF0-CM9
MR16/18R1628DF0-CM8
MR16/18R1628DF0-CK8
MR16/18R162GDF0-CT9
MR16/18R162GDF0-CN9
MR16/18R162GDF0-CM9
MR16/18R162GDF0-CM8
MR16/18R162GDF0-CK8
32M x 16/18 -CM9
35
-CM8
40
-CK8
800
45
The RDRAM architecture enables the highest sustained
bandwidth for multiple, simultaneous, randomly addressed,
memory transactions. The separate control and data buses
with independent row and column control yield over 95%
bus efficiency. The RDRAM device's 32-bank architecture
supports up to four simultaneous transactions per device.
-CT9
1066
1066
1066
800
32P
32
-CN9
64M x 16/18 -CM9
35
-CM8
40
-CK8
800
45
-CT9
1066
1066
1066
800
32P
32
Features
-CN9
128M x 16/18 -CM9
35
♦ High speed up to 1066 MHz RDRAM storage
♦ 184 edge connector pads with 1mm pad spacing
♦ Module PCB size : 133.35mm x 31.75mm x 1.27mm
(5.25” x 1.25” x 0.05”) - 256Mb and 288Mb base PC800
RIMM Module
♦ Module PCB size : 133.35mm x 34.93mm x 1.27mm
(5.25” x 1.375” x 0.05”) - 256Mb and 288Mb base
PC1066 RIMM Module
♦ Each RDRAM device has 32 banks, for a total of 512, 256,
128, 64 banks on each 512/576MB, 256/288MB,
128/144MB, 64/72MB module respectively
♦ Gold plated edge connector pad contacts
♦ Serial Presence Detect(SPD) support
-CM8
40
-CK8
800
45
-CT9
1066
1066
1066
800
32P
32
-CN9
256M x 16/18 -CM9
-CM8
35
40
-CK8
800
45
Form Factor
The RIMM modules are offered in 184-pad 1mm edge
connector pad pitch suitable for 184 contact RIMM connec-
tors. Figure 1 below, shows a sixteen device RIMM module.
♦ Operates from a 2.5 volt supply (±5%)
♦ Powerdown self refresh modes
♦ Separate Row and Column buses for higher efficiency
♦ WBGA package (92 balls)
Note: On double sided modules, RDRAM devices are also installed on bottom side of PCB.
Figure 1: RIMM Module shown with heat spreader removed
Version 1.0 July 2002
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MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Table 2: Module Pad Numbers and Signal Names
Pin
A1
Pin Name
Gnd
Pin
B1
Pin Name
Gnd
Pin
Pin Name
NC
Pin
B47
Pin Name
NC
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
A80
A81
A82
A83
A84
A85
A86
A87
A88
A89
A90
A91
A92
A2
LDQA8
Gnd
B2
LDQA7
Gnd
NC
B48
B49
B50
B51
B52
B53
B54
B55
B56
B57
B58
B59
B60
B61
B62
B63
B64
B65
B66
B67
B68
B69
B70
B71
B72
B73
B74
B75
B76
B77
B78
B79
B80
B81
B82
B83
B84
B85
B86
B87
B88
B89
B90
B91
B92
NC
A3
B3
NC
NC
A4
LDQA6
Gnd
B4
LDQA5
Gnd
NC
NC
A5
B5
Vref
Vref
A6
LDQA4
Gnd
B6
LDQA3
Gnd
Gnd
Gnd
A7
B7
SCL
SA0
A8
LDQA2
Gnd
B8
LDQA1
Gnd
Vdd
Vdd
A9
B9
SDA
SA1
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
LDQA0
Gnd
B10
B11
B12
B13
B14
B15
B16
B17
B18
B19
B20
B21
B22
B23
B24
B25
B26
B27
B28
B29
B30
B31
B32
B33
B34
B35
B36
B37
B38
B39
B40
B41
B42
B43
B44
B45
B46
LCFM
Gnd
SVdd
SWP
SVdd
SA2
LCTMN
Gnd
LCFMN
Gnd
Vdd
Vdd
RSCK
Gnd
RCMD
Gnd
LCTM
Gnd
NC
Gnd
RDQB7
Gnd
RDQB8
Gnd
NC
LROW2
Gnd
Gnd
RDQB5
Gnd
RDQB6
Gnd
LROW1
Gnd
LROW0
Gnd
RDQB3
Gnd
RDQB4
Gnd
LCOL4
Gnd
LCOL3
Gnd
RDQB1
Gnd
RDQB2
Gnd
LCOL2
Gnd
LCOL1
Gnd
RCOL0
Gnd
RDQB0
Gnd
LCOL0
Gnd
LDQB0
Gnd
RCOL2
Gnd
RCOL1
Gnd
LDQB1
Gnd
LDQB2
Gnd
RCOL4
Gnd
RCOL3
Gnd
LDQB3
Gnd
LDQB4
Gnd
RROW1
Gnd
RROW0
Gnd
LDQB5
Gnd
LDQB6
Gnd
NC
RROW2
Gnd
LDQB7
Gnd
LDQB8
Gnd
Gnd
RCTM
Gnd
NC
LSCK
Vcmos
SOUT
Vcmos
NC
LCMD
Vcmos
SIN
Gnd
RCTMN
Gnd
RCFMN
Gnd
Vcmos
NC
RDQA0
Gnd
RCFM
Gnd
Gnd
Gnd
RDQA2
Gnd
RDQA1
Gnd
NC
NC
Vdd
Vdd
RDQA4
Gnd
RDQA3
Gnd
Vdd
Vdd
NC
NC
RDQA6
Gnd
RDQA5
Gnd
NC
NC
NC
NC
RDQA8
Gnd
RDQA7
Gnd
NC
NC
Version 1.0 July 2002
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MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Table 3: Module Connector Pad Description
Signal
Pins
I/O
Type
Description
A1, A3, A5, A7, A9, A11, A13, A15,
A17, A19, A21, A23, A25, A27, A29,
A31, A33, A39, A52, A60, A62, A64,
A66, A68, A70, A72, A74, A76, A78,
A80, A82, A84, A86, A88, A90, A92,
B1, B3, B5, B7, B9, B11, B13, B15,
B17, B19, B21, B23, B25, B27, B29,
B31, B33, B39, B52, B60, B62, B64,
B66, B68, B70, B72, B74, B76, B78,
B80, B82, B84, B86, B88, B90, B92
Ground reference for RDRAM core and interface. 72 PCB
connector pads.
Gnd
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Positive polarity.
LCFM
B10
I
I
I
I
I
I
RSL
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Negative polarity.
LCFMN
LCMD
B12
Serial Command used to read from and write to the control
registers. Also used for power management.
B34
VCMOS
RSL
LCOL4..
LCOL0
Column bus. 5-bit bus containing control and address infor-
mation for column accesses.
A20, B20, A22, B22, A24
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Positive polarity.
LCTM
A14
A12
RSL
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Negative polarity.
LCTMN
RSL
Data bus A. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. LDQA8 is
non-functional on modules with x16 RDRAM devices
LDQA8..
LDQA0
A2, B2, A4, B4, A6, B6, A8, B8, A10
I/O
I/O
RSL
RSL
Data bus B. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. LDQB8 is non-
functional on modules with x16 RDRAM devices.
LDQB8..
LDQB0
B32, A32, B30, A30, B28, A28, B26,
A26, B24
LROW2..
LROW0
Row bus. 3-bit bus containing control and address information
for row accesses.
B16, A18, B18
A34
I
I
RSL
Serial Clock input. Clock source used to read from and write
to the RDRAM control registers.
LSCK
VCMOS
A16, B14, A38, B38, A40, B40, A43,
B43, A44, B44, A45, B45, A46, B46,
A47, B47, A48, B48, A49, B49, A50,
B50, A77, B79
These pads are not connected. These 24 connector pads are
reserved for future use.
NC
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Positive polarity.
RCFM
B83
B81
B59
I
I
I
RSL
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Negative polarity.
RCFMN
RCMD
Serial Command Input. Pin used to read from and write to the
control registers. Also used for power management.
VCMOS
Version 1.0 July 2002
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MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Signal
Pins
I/O
I
Type
RSL
Description
RCOL4..
RCOL0
Column bus. 5-bit bus containing control and address infor-
mation for column accesses.
A73, B73, A71, B71, A69
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Positive polarity.
RCTM
A79
A81
I
I
RSL
RSL
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Negative polarity.
RCTMN
Data bus A. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. RDQA8 is
non-functional on modules x16 RDRAM devices.
RDQA8..
RDQA0
A91, B91, A89, B89, A87, B87, A85,
B85, A83
I/O
I/O
RSL
RSL
Data bus B. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. RDQB8 is
non-functional on modules x16 RDRAM devices.
RDQB8..
RDQB0
B61, A61, B63, A63, B65, A65, B67,
A67, B69
RROW2..
RROW0
Row bus. 3-bit bus containing control and address information
for row accesses.
B77, A75, B75
A59
I
I
RSL
Serial Clock input. Clock source used to read from and write
to the RDRAM control registers.
RSCK
VCMOS
SA0
SA1
SA2
SCL
SDA
B53
B55
B57
A53
A55
I
I
SVDD
SVDD
SVDD
SVDD
SVDD
Serial Presence Detect Address 0.
Serial Presence Detect Address 1.
Serial Presence Detect Address 2.
Serial Presence Detect Clock.
I
I
I/O
Serial Presence Detect Data (Open Collector I/O).
Serial I/O for reading from and writing to the control registers.
Attaches to SIO0 of the first RDRAM device on the module.
SIN
B36
I/O VCMOS
Serial I/O for reading from and writing to the control registers.
Attaches to SIO1 of the last RDRAM device on the module.
SOUT
SVDD
A36
I/O VCMOS
SPD Voltage. Used for signals SCL, SDA, SWE, SA0, SA1
and SA2.
A56, B56
Serial Presence Detect Write Protect (active high). When low,
the SPD can be written as well as read.
SWP
VCMOS
Vdd
A57
I
SVDD
A35, B35, A37, B37
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
Supply voltage for the RDRAM core and interface logic.
Logic threshold reference voltage for RSL signals.
A41, A42, A54, A58, B41, B42, B54,
B58
Vref
A51, B51
Version 1.0 July 2002
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MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Vdd
2 per
RDRAM device
SIO0
SIO1
SCK
CMD
Vref
0.22/0.1µFa
U1
RDRAM Device(256/288Mb)
Gnd
VREF
1 per
2 RDRAM devices
Plus one
SIO0
SIO1
SCK
CMD
Vref
U2
Near Connector
0.22/0.1µFa
RDRAM Device(256/288Mb)
Gnd
VCMOS
1 per
2 RDRAM devices
SIO0
SIO1
SCK
CMD
0.22/0.1µFa
U3
RDRAM Device(256/288Mb)
Gnd
Vref
a .
•
•
•
∗ 0.1 µF : 800MHz products
for 64/72MB, 128/144MB and
256/288MB
•
•
•
∗ 0.22 µF : the other products
SIO0
SIO1
SCK
CMD
Vref
UN
RDRAM Device(256/288Mb)
Module
N
Capacity
512/576MB 16
256/288MB
128/144MB
64/72MB
8
4
2
Note 1. Rambus Channel signals form a loop through
the RIMM module, with the exception of the SIO chain.
Note 2. See Serial Presence Detection Specification for
information on the SPD device and its contents.
SVDD
Serial Presence Detect
SVDD
Vcc
A1
SCL
WP
A0
SDA
A2
SCL
SWP
47KΩ
SDA
0.22/0.1µFa
U0
SA0
SA1
SA2
Gnd
Figure 2: RIMM Module Functional Diagram
Version 1.0 July 2002
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MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Absolute Maximum Ratings
Table 4: Absolute Maximum Ratings
Symbol
VI,ABS
Parameter
Min
Max
Unit
Voltage applied to any RSL or CMOS signal pad with respect to Gnd
Voltage on VDD with respect to Gnd
Storage temperature
- 0.3
- 0.5
- 50
-
VDD + 0.3
VDD + 1.0
100
V
V
VDD,ABS
TSTORE
TPLATE
°C
Plate temperature
92
°C
DC Recommended Electrical Conditions
Table 5: DC Recommended Electrical Conditions
Symbol
VDD
Parameter and Conditions
Min
Max
Unit
Supply voltage
2.50 - 0.13
2.50 + 0.13
V
CMOS I/O power supply at pad for 2.5V controllers:
CMOS I/O power supply at pad for 1.8V controllers:
VDD
1.8 - 0.1
VDD
1.8 + 0.2
V
V
VCMOS
VREF
VSPD
Reference voltage
1.4 - 0.2
2.2
1.4 + 0.2
3.6
V
V
Serial Presence Detector- Positive power supply
Table 6: RIMM Module Capacity and Number of RDRAM device
RIMM Module Capacity:
Number of 256/288Mb RDRAM devices
512/576MB
256/288MB
128/144MB
64/72MB
16
8
4
2
Version 1.0 July 2002
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MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
RIMM Module Current Profile
Table 7: RIMM Module Current Profile
RIMM Module Capacity
512/576MB
16
256/288MB
8
128/144MB
4
64/72MB
2
Number of 256/288Mb RDRAM
devices
IDD
Unit
RIMM Module power
Freq
Max
Max
Max
Max
conditions a
-1066
-800
710/760c
590/620
678/728
558/588
662/712
542/572
950/1000
770/800
1100/1150
890/920
742/802
587/632
1030/1090
815/860
1180/1240
935/980
654/704
534/564
750/800
610/640
800/850
650/680
734/794
579/624
830/890
655/700
880/940
695/740
One RDRAM device in Readb,
balance in NAP mode
IDD1
mA
mA
mA
mA
mA
mA
-1066
-800
2150/2200
1730/1760
2900/2950
2330/2360
790/850
1350/1400
1090/1120
1700/1750
1370/1400
758/818
One RDRAM device in Readb,
balance in Standby mode
IDD2
IDD3
IDD4
IDD5
IDD6
-1066
-800
One RDRAM device in Readb,
balance in Active mode
-1066
-800
One RDRAM device in Write,
balance in NAP mode
635/680
603/648
-1066
-800
2230/2290
1775/1820
2980/3040
2375/2420
1430/1490
1135/1180
1780/1840
1415/1460
One RDRAM device in Write,
balance in Standby mode
-1066
-800
One RDRAM device in Write,
balance in Active mode
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current.
b. I/O current is a function of the % of 1’s, to add I/O power for 50% 1’s for a X16 need to add 257mA or 290mA for X18 ECC module for the following:
= 2.5V, V = 1.8V, V = 1.4V and V = V - 0.5V.
V
DD
TERM
REF
DIL
REF
c. Current values represent X16(Non-Ecc) / X18(Ecc)
Version 1.0 July 2002
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MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
AC Electrical Specifications
Table 8: AC Electrical Specifications
Parameter and Conditions
Module Impedance of RSL Signals
Symbol
Min
25.2
23.8
Typ
28
Max
30.8
32.2
Unit
Ω
ZL
ZUL-CMOS
Module Impedance of SCK and CMOS signals
28
Ω
Propagation Delay variation of RSL signals. Average clock
delay from finger to finger of all RSL clock nets (CTM,
CTMN, CFM and CFMN)
See
Table10a,b
TPD
-
ns
b,c
b,c
Propagation delay variation of RSL signals with respect to TPD
for 2, 4 and 8 device modules
-21
-24
21
24
ps
ps
ps
ps
%
%
%
∆TPD
Propagation delay variation of RSL signals with respect to TPD
for 16 device modules
Propagation delay variation of SCK signals with respect to an
average clock delay
∆TPD-CMOS
∆TPD-SCK,CMD
Vα/VIN
-250
-200
250
200
Propagation delay variation of CMD signals with respect to SCK
signal
See
Table10a
Attenuation Limit
See
Table10a
VXF/VIN
Forward crosstalk coefficient (300ps input rise time @ 20%-80%)
Backward crosstalk coefficient (300ps input rise time @ 20%-
80%)
See
Table10a
VXB/VIN
a. Table 10 lists parameters and specifications for different storage capacity RIMM Modules that use 256Mb or 288Mb RDRAM devices.
b. T or Average clock delay is defined as the delay from finger to finger of RSL signal.
PD
c. If the RIMM module meets the following specification, then it is compliant to the specification. If the RIMM module does not meet these specifica
tions, then the specification can be adjusted by the “Adjusted ∆T Specification“ table 9 below.
PD
Adjusted ∆TPD Specification
Table 9: Adjusted ∆TPD Specification
Absolute
Min / Max
Symbol
Parameter and Conditions
Adjusted Min/Max
Unit
Propagation delay variation of RSL signals with respect to
TPD for 2, 4 and 8 device modules
∆TPD
+/-[20+(18*N*∆Z0)]a
+/-[24+(18*N*∆Z0)]a
-30
30
50
ps
ps
Propagation delay variation of RSL signals with respect to
TPD for 16 device modules
-50
a. Where:
N = Number of RDRAM devices installed on the RIMM module
∆Z0 = delta Z0% = (max Z0 - min Z0)/(min Z0)
(max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules)
Version 1.0 July 2002
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MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
AC Electrical Specifications for RIMM Modules
Table 10: AC Electrical Specifications for RIMM Modules
RIMM Module Capacity
512/576MB
16
256/288MB 128/144MB
64/72MB
2
Number of 256/288Mb RDRAM devices
8
4
Symbol
Unit
Parameter and Condition for RIMM
Freq.
Max
Max
Max
Max
Modules
-1066
Propagation Delay, all RSL signals
-800
2.11
2.11
27.0
25.0
8.0
1.56
1.56
17.0
16.0
4.0
1.56
1.56
17.0
16.0
4.0
1.56
1.56
17.0
16.0
4.0
TPD
ns
%
%
%
Ω
-1066
Vα/VIN
VXF/VIN
VXB/VIN
RDC
Attenuation Limit
-800
-1066
Forward crosstalk coefficient
(300ps input rise time @ 20%-80%)
-800
8.0
4.0
4.0
4.0
-1066
2.5
2.0
2.0
2.0
Backward crosstalk coefficient
(300ps input rise time @ 20%-80%)
-800
2.5
2.0
2.0
2.0
-1066
1.2
0.8
0.6
0.6
DC Resistance Limit
-800
1.2
0.8
0.6
0.6
Version 1.0 July 2002
Page 9
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Physical Dimensions -1 ( For PCB )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate.
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].
133.35±0.127[5.250±0.005]
6.35[0.25]
3.00[0.118]
120.65[4.75]
4.00±0.15
[0.157±0.006]
DIA 2.44
R 2.00
COMPONENT AREA
(A SIDE)
+
+
7.468[0.294]
A-1
A-92
45.00[1.772]
DETAIL A
DETAIL B
1.00[0.039]
45.00[1.772]
11.50[0.453]
R 1.00
5.68[0.2236]
4.50[0.177]
55.175±0.08[2.172±0.003]
78.175[3.078]
8.60[0.339]
B-1
B-92
COMPONENT AREA
(B SIDE)
Min.6.35[0.25]
Note : The gray area above represents the contact surface of the heat spreader.
0.80±0.10
[0.031±0.004]
Heat spreader
1.00[0.039]
3.00±0.10
[0.12±0.004]
Min.4.88
[0.192]
0.15±0.10
[0.006±0.004]
2.99±0.05
[0.12±0.002]
2.00±0.10
[0.079±0.004]
DETAIL A
DETAIL B
Figure 3: 256Mb/288Mb base RIMM Module PCB Physical Dimensions
Version 1.0 July 2002
Page10
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Physical Dimensions -2 ( For PCB )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate.
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].
133.35±0.127[5.250±0.005]
6.35[0.25]
3.00[0.118]
120.65[4.75]
4.00±0.15
[0.157±0.006]
DIA 2.44
R 2.00
COMPONENT AREA
(A SIDE)
+
+
7.468[0.294]
A-1
A-92
45.00[1.772]
DETAIL A
DETAIL B
1.00[0.039]
45.00[1.772]
11.50[0.453]
R 1.00
5.68[0.2236]
4.50[0.177]
55.175±0.08[2.172±0.003]
78.175[3.078]
8.60[0.339]
B-1
B-92
COMPONENT AREA
(B SIDE)
Min.6.35[0.25]
Note : The gray area above represents the contact surface of the heat spreader.
0.80±0.10
[0.031±0.004]
Heat spreader
1.00[0.039]
3.00±0.10
[0.12±0.004]
Min.4.88
[0.192]
0.15±0.10
[0.006±0.004]
2.99±0.05
[0.12±0.002]
2.00±0.10
[0.079±0.004]
DETAIL A
DETAIL B
Figure 4: 256Mb/288Mb base RIMM Module PCB Physical Dimensions
Version 1.0 July 2002
Page11
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Physical Dimensions -3 ( For Heat Spreader )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate.
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].
127±0.25[5.0±0.009]
120.66±0.12[4.748±0.005]
108.81±0.12[4.283±0.005]
2.9[0.114]
DIA 2.36±0.05[0.09±0.001]
Center-Point
http://www.samsungsemi.com
WARNING ! HOT SURFACE
1.00±0.07
[0.04±0.002]
12.7±0.07[0.5±0.002]
12.7±0.07[0.5±0.002]
133.35±0.127[5.250±0.005]
127±0.25[5.0±0.009]
A
http://www.samsungsemi.com
WARNING ! HOT SURFACE
A
SECTION A-A
SECTION A-A
Max 7.80
[0.307]
Max 4.70
[0.185]
Heat Spreader
Heat Spreader
CSP
CSP
Thermal
Thermal
Conductive
Gap Filling
Material
Conductive
Gap Filling
Material
PCB
PCB
1.27±0.10
[0.050±0.004]
1.27±0.10
[0.050±0.004]
[ Single side module ]
[ Double side module ]
Figure 5: Heat Spreader Physical Dimensions
Version 1.0 July 2002
Page12
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Physical Dimensions -4 ( For Heat Spreader )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate.
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].
127±0.25[5.0±0.009]
120.66±0.12[4.748±0.005]
108.81±0.12[4.283±0.005]
2.9[0.114]
DIA 2.36±0.05[0.09±0.001]
Center-Point
http://www.samsungsemi.com
WARNING ! HOT SURFACE
1.00±0.07
[0.04±0.002]
12.7±0.07[0.5±0.002]
12.7±0.07[0.5±0.002]
133.35±0.127[5.250±0.005]
127±0.25[5.0±0.009]
A
http://www.samsungsemi.com
WARNING ! HOT SURFACE
A
SECTION A-A
SECTION A-A
Max 7.80
[0.307]
Max 4.70
[0.185]
Heat Spreader
Heat Spreader
CSP
CSP
Thermal
Thermal
Conductive
Gap Filling
Material
Conductive
Gap Filling
Material
PCB
PCB
1.27±0.10
[0.050±0.004]
1.27±0.10
[0.050±0.004]
[ Single side module ]
[ Double side module ]
Figure 6: Heat Spreader Physical Dimensions
Version 1.0 July 2002
Page13
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
Standard RIMM Module Marking
The RIMM modules available from Samsung are marked
like Figure 7 below. This marking also assists users to
specify and verify if the correct RIMM modules are installed
in their systems. In the diagram, a label is shown attached to
the RIMM module’s heat spreader. Information contained on
the label is specific to the RIMM module and provides
RDRAM device information without requiring removal of
the RIMM module’s heat spreader.
A
C
E
F
G
B
D
KOREA 0230 512MB /16
MR16R162GDF0-CT9 1066-32P 102
L
K
J
I
H
Label Field
Description
Marked Text
SAMSUNG
Unit
A
B
Vendor Logo
Country
RIMM Module Vendor SAMSUNG Logo Area
Country of origin
-
-
KOREA
yyww
Year & Week
code
C
D
E
F
Manufactured Year & Week code
-
-
Module Memory
Capacity
Number of 8-bit or 9-bit MBytes of RDRAM storage in
RIMM module
64MB, 128MB, 256MB, 512MB
2/4/8/16
Number of
RDRAM devices
Number of RDRAM devices contained in the RIMM
module
RDRAM
devices
Indicates whether the RIMM module supports 8 (non
ECC) or 9 (ECC) bit Bytes
blank = 8 bit Bytes
ECC = 9 bit Bytes
ECC Support
-
G
H
Notice!
Hot surface caution notice.
ISO Standard
-
-
-
-
Caution Logo
Gerber : 10 = 1.0 ver.
01 = 0.1 ver.
Gerber & SPD
Version
PCB Gerber file & SPD code version used on RIMM
Module
I
-
SPD
:
2 = 1.3 ver.
J
tRAC
Row Access Time
-32P, -32, -35, -40, -45
1066, 800
ns
MHz
-
K
L
Memory Speed
Part No.
Data transfer speed for RDRAM devices
SAMSUNG RIMM Module part No.
See Table 1
Figure 7: RIMM Module Marking Example
Version 1.0 July 2002
Page14
Table Of Contents
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Key Timing Parameters/Part Numbers . . . . . . . . . . . . . . . . 1
Module Pad Numbers and Signal Names . . . . . . . . . . . . . . 2
Module Connector Pad Description . . . . . . . . . . . . . . . 3 - 4
RIMM Module Functional Diagram . . . . . . . . . . . . . . . . . . 5
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . 6
DC Recommended Electrical Conditions . . . . . . . . . . . . . . 6
RIMM Module Supply Current Profile. . . . . . . . . . . . . . . . 7
AC Electrical Specifications . . . . . . . . . . . . . . . . . . . . . 8 - 9
Physical Dimensions -1, -2 ( For PCB ) . . . . . . . . . . 10 - 11
Physical Dimensions -3, -4 ( For Heat Spreader) . . . 12 - 13
Standard RIMM Module Marking. . . . . . . . . . . . . . . . . . . 14
Copyright © July 2002, Samsung Electronics.
All rights reserved.
Direct Rambus, Direct RDRAM and SO-RIMM are trade-
marks of Rambus Inc. Rambus, RDRAM, RIMM and the
Rambus Logo are registered trademarks of Rambus Inc.
This document contains advanced information that is subject
to change by Samsung Electronics without notice
Document Version 1.0
Samsung Electronics Co. Ltd.
San #16 Banwol-ri, Taean-Eup Hwasung-City,
Gyeonggi-Do, KOREA
Telephone: 82-31-208-6369
Fax: 82-31-208-6799
http://www.intl.samsungsemi.com
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