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MR18R326GAG0 [SAMSUNG]

(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V; （ 32Mx18 ）基于16颗576MB RIMM模块A -死， 32S银行， 32K / 32ms的参考， 2.5V
MR18R326GAG0
元器件型号： MR18R326GAG0
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
（ 32Mx18 ）基于16颗576MB RIMM模块A -死， 32S银行， 32K / 32ms的参考， 2.5V
PDF文件： 总14页 (文件大小：260K)
下载文档：  下载PDF数据表文档文件
型号参数：MR18R326GAG0参数
 查看货源

MR18R326GAG0-CM8

 (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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16 SAMSUNG

MR18R326GAG0-CM8

 (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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17 SAMSUNG

MR18R326GAG0-CT9

 (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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21 SAMSUNG

MR18R326GAG0-CT9

 (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

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15 SAMSUNG

MR18W

 FIXED METAL FILM RESISTORS

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34 ABCO

MR1A08ACTS35C

 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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19 FREESCALE

MR1A08ACYS35

 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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13 FREESCALE

MR1A08ACYS35

 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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11 FREESCALE

MR1A08ATS35C

 SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44

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0 PHILIPS

MR1A08AVTS35C

 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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30 FREESCALE

MR1A08AVYS35

 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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10 FREESCALE

MR1A08AVYS35

 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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11 FREESCALE

MR1A08AYS35

 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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13 FREESCALE

MR1A16ACTS35C

 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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18 FREESCALE

MR1A16ACYS35

 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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12 FREESCALE
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