RC2012F102CS [SAMSUNG]

Samsung Thick - Film Chip Resistor;
RC2012F102CS
型号: RC2012F102CS
厂家: SAMSUNG    SAMSUNG
描述:

Samsung Thick - Film Chip Resistor

电阻器
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SPECIFICATION  
Supplier : Samsung electro-mechanics  
Product : Thick - Film chip RESISTOR  
Samsung P/N: RC2012F***CS  
2012, ±1%, (1~1), 1/8W  
Description :  
A. Samsung Part Number  
RC 2012  
F
*** CS  
Code designation  
Dimension  
Samsung Thick - Film Chip Resistor  
1.25  
0.5  
2012 (mm code)  
±1 %  
L : 2.0 ± 0.2  
mm  
W :  
T :  
± 0.15 mm  
± 0.1 mm  
Resistancs tolerance  
Nominal resistance value  
Left 2 digits : Resistance value, Right 1 digits : Exponential number of 10.  
3digits -  
ex) 101 : 10×101 = 10×10 = 100Ω  
Left 3 digits : Resistance value, Right 1 digits : Exponential number of 10.  
4digits -  
ex) 4222 : 422×102 = 422×100 = 42.2㏀  
Read alphabet "R" as decimal point  
"000" : Jumper(0)  
ex) 3R7 : 3.7 = 3.7/ 88R7 : 88.7 = 88.7Ω  
Packing code  
7" Reel packaging  
B. Samsung Reliablility Test and Judgement condition  
Judgement  
Resistor  
Test condition  
Jumper  
Resistor  
Jumper  
Direct Current  
Resistance  
Short-time  
Within the regulated resistance  
tolerance.  
Voltage apply Within 5 sec  
50mMax  
Apply 2.5 times rated voltage for 5sec Max Surge  
Current  
Less than ±(1%+0.1)of the initial value  
No evidence of mechanical damage  
Less than ±(3%+0.1)of the initial value  
No evidence of mechanical damage  
No evidence of mechanical damage  
50mMax  
50mMax  
Overload  
Intermittent  
Overload  
2.5 times of rated voltage.  
1 sec On, 25 sec Off / 10,000cycles  
Apply Voltage for 1minute  
0603:50v  
Max Surge  
Current  
Dielectric  
Withstanding Voltage  
Insulation  
1005,1608:100v  
Over 1,000MΩ  
Resistance  
Other: 500v  
Test Temperature() 20℃→-55/20℃→125℃  
J-Grade  
Temperature  
1Ω≤R<10:+300/-200ppm/℃  
10Ω≤R1M:±100ppm/(0603±250ppm)  
1M<R10M:±300ppm/℃  
F-Grade  
T.C.R(ppm/) =  
R R  
0
1
×
×106  
0
Characteristic  
R
0
T T  
T0 : 20 ± 2, R0 : Resistance at T0 ()  
T : Test temperature , R : Resistance at T ()  
Solder Temp : 245℃  
10Ω≤R1M:±100ppm/(0603±250ppm)  
Coverage: 95%each termination.  
Solderability  
Dipping time : 3 sec  
Judgement  
Test condition  
3mm of bending shall be applied  
for 5sec.  
Bending test  
Less than ±(0.5%+0.05)of the initial value 50mMax  
No evidence of mechanical damage  
Adhesive strength  
of termination  
Resistance to  
soldering heat  
Anti-Vibration  
test  
No mechanical damage or sign of disconnection  
Test strengh : 5N  
Test time: Applying pressure for 10seconds  
Less than ±(1%+0.05)of the initial value 50mMax 260±5, 10 sec  
No evidence of mechanical damage  
Test amplitude : 1.5mm  
Frequency 10-55-10/ 2hr in x,y,z direction.  
Less than ±(1%+0.05)of the initial value 50mMax  
No evidence of mechanical damage  
Temperature  
cycle  
Less than ±(1%+0.1)of the initial value  
No evidence of mechanical damage  
Less than ±(3%+0.1)of the initial value  
No evidence of mechanical damage  
Less than ±(3%+0.1)of the initial value  
No evidence of mechanical damage  
Less than ±(3%+0.1)of the initial value  
No evidence of mechanical damage  
Less than ±(3%+0.1)of the initial value  
No evidence of mechanical damage  
50mMax 100cycles, -55/30min 125/30min  
sweep time:5min  
Load life  
50mMax Test voltage: rated voltage / 70±2℃  
1,000hours(90min:On , 30min:Off)  
Low Temp.  
Exposure  
High Temp  
Exposure  
Moisture  
50mMax Dwell in -55chamber without loading  
for 1,000hours  
50mMax Dwel in 125or 155chamber without loading  
for 1,000hours  
50mMax Test voltage: rated voltage / 40±2℃  
1,000hours(90min:On,30min:Off) / 90~95% RH  
Resistance  
C. Recommended Soldering method :  
Reflow ( Reflow Peak Temperature : 260+0/-5, 10sec. Max )  
* For the more detail Specification, Please refer to the samsung chip RESISTOR catalogue.  

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