RC2012F102CS [SAMSUNG]
Samsung Thick - Film Chip Resistor;型号: | RC2012F102CS |
厂家: | SAMSUNG |
描述: | Samsung Thick - Film Chip Resistor 电阻器 |
文件: | 总2页 (文件大小:82K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPECIFICATION
• Supplier : Samsung electro-mechanics
• Product : Thick - Film chip RESISTOR
• Samsung P/N: RC2012F***CS
2012, ±1%, (1Ω~1㏁), 1/8W
• Description :
A. Samsung Part Number
RC 2012
F
*** CS
①
②
③
④
⑤
① Code designation
② Dimension
Samsung Thick - Film Chip Resistor
1.25
0.5
2012 (mm code)
±1 %
L : 2.0 ± 0.2
mm
W :
T :
± 0.15 mm
± 0.1 mm
③ Resistancs tolerance
④ Nominal resistance value
Left 2 digits : Resistance value, Right 1 digits : Exponential number of 10.
※3digits -
ex) 101 : 10×101 = 10×10 = 100Ω
Left 3 digits : Resistance value, Right 1 digits : Exponential number of 10.
※4digits -
ex) 4222 : 422×102 = 422×100 = 42.2㏀
Read alphabet "R" as decimal point
"000" : Jumper(0Ω)
ex) 3R7 : 3.7 = 3.7Ω / 88R7 : 88.7 = 88.7Ω
⑤ Packing code
7" Reel packaging
B. Samsung Reliablility Test and Judgement condition
Judgement
Resistor
Test condition
Jumper
Resistor
Jumper
Direct Current
Resistance
Short-time
Within the regulated resistance
tolerance.
Voltage apply Within 5 sec
50mΩ Max
Apply 2.5 times rated voltage for 5sec Max Surge
Current
Less than ±(1%+0.1Ω)of the initial value
No evidence of mechanical damage
Less than ±(3%+0.1Ω)of the initial value
No evidence of mechanical damage
No evidence of mechanical damage
50mΩ Max
50mΩ Max
Overload
Intermittent
Overload
2.5 times of rated voltage.
1 sec On, 25 sec Off / 10,000cycles
Apply Voltage for 1minute
0603:50v
Max Surge
Current
Dielectric
Withstanding Voltage
Insulation
1005,1608:100v
Over 1,000MΩ
Resistance
Other: 500v
Test Temperature(℃) 20℃→-55℃/20℃→125℃
■ J-Grade
Temperature
1Ω≤R<10Ω:+300/-200ppm/℃
10Ω≤R≤1MΩ:±100ppm/℃(0603±250ppm)
1MΩ<R≤10MΩ:±300ppm/℃
■ F-Grade
T.C.R(ppm/℃) =
R − R
0
1
×
×106
0
Characteristic
R
0
T − T
T0 : 20 ± 2℃, R0 : Resistance at T0 (Ω)
T : Test temperature , R : Resistance at T (Ω)
Solder Temp : 245℃
10Ω≤R≤1MΩ:±100ppm/℃(0603±250ppm)
Coverage: 95%≤ each termination.
Solderability
Dipping time : 3 sec
Judgement
Test condition
3mm of bending shall be applied
for 5sec.
Bending test
Less than ±(0.5%+0.05Ω)of the initial value 50mΩ Max
No evidence of mechanical damage
Adhesive strength
of termination
Resistance to
soldering heat
Anti-Vibration
test
No mechanical damage or sign of disconnection
Test strengh : 5N
Test time: Applying pressure for 10seconds
Less than ±(1%+0.05Ω)of the initial value 50mΩ Max 260±5℃ , 10 sec
No evidence of mechanical damage
Test amplitude : 1.5mm
Frequency 10㎐-55㎐-10㎐ / 2hr in x,y,z direction.
Less than ±(1%+0.05Ω)of the initial value 50mΩ Max
No evidence of mechanical damage
Temperature
cycle
Less than ±(1%+0.1Ω)of the initial value
No evidence of mechanical damage
Less than ±(3%+0.1Ω)of the initial value
No evidence of mechanical damage
Less than ±(3%+0.1Ω)of the initial value
No evidence of mechanical damage
Less than ±(3%+0.1Ω)of the initial value
No evidence of mechanical damage
Less than ±(3%+0.1Ω)of the initial value
No evidence of mechanical damage
50mΩ Max 100cycles, -55℃/30min ↔125℃/30min
sweep time:5min
Load life
50mΩ Max Test voltage: rated voltage / 70±2℃
1,000hours(90min:On , 30min:Off)
Low Temp.
Exposure
High Temp
Exposure
Moisture
50mΩ Max Dwell in -55℃ chamber without loading
for 1,000hours
50mΩ Max Dwel in 125℃ or 155℃ chamber without loading
for 1,000hours
50mΩ Max Test voltage: rated voltage / 40±2℃
1,000hours(90min:On,30min:Off) / 90~95% RH
Resistance
C. Recommended Soldering method :
Reflow ( Reflow Peak Temperature : 260+0/-5℃, 10sec. Max )
* For the more detail Specification, Please refer to the samsung chip RESISTOR catalogue.
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