SGL5N60RUFD [SAMSUNG]
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN;
| 型号： | SGL5N60RUFD |
| 厂家： | 
SAMSUNG |
| 描述： | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN 局域网 电动机控制 栅 开关 晶体管 |
| 文件： | 总7页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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