SSH25N35 [SAMSUNG]

Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN;
SSH25N35
型号: SSH25N35
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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SSH25N35A

Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH25N35A

Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH25N40

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-247VAR

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20 ETC

SSH25N40

Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH25N40A

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-247VAR

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30 ETC

SSH25N40A

Advanced Power MOSFET

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28 FAIRCHILD

SSH3N70

Power Field-Effect Transistor, 3A I(D), 700V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH3N70A

Power Field-Effect Transistor, 3A I(D), 700V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH3N90

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247VAR

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36 ETC

SSH40N15

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 40A I(D) | TO-247VAR

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27 ETC

SSH40N15

Power Field-Effect Transistor, 40A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH40N15A

Power Field-Effect Transistor, 40A I(D), 150V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH40N15A

Power Field-Effect Transistor, 40A I(D), 150V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH40N20

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 40A I(D) | TO-247VAR

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39 ETC

SSH40N20

Power Field-Effect Transistor, 40A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 SAMSUNG