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SSP4N70 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
SSP4N70
元器件型号： SSP4N70
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

N-CHANNEL POWER MOSFETS
N沟道功率MOSFET

晶体 晶体管 功率场效应晶体管
PDF文件： 总5页 (文件大小：204K)
下载文档：  下载PDF数据表文档文件
型号参数：SSP4N70参数
 查看货源

SSP4N70A

 Power Field-Effect Transistor, 4A I(D), 700V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

SSP4N70A

 Power Field-Effect Transistor, 4A I(D), 700V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

SSP4N80

 N-CHANNEL POWER MOSFETS

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23 SAMSUNG

SSP4N80

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-220AB

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37 ETC

SSP4N80A

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-220AB

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78 ETC

SSP4N80AJ69Z

 Power Field-Effect Transistor, 4A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

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0 FAIRCHILD

SSP4N80AS

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.5A I(D) | TO-220AB

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16 ETC

SSP4N80AS

 ADVANCED POWER MOFET

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26 FAIRCHILD

SSP4N80ASJ69Z

 Power Field-Effect Transistor, 4.5A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 FAIRCHILD

SSP4N90

 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-220AB

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108 ETC

SSP4N90A

 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-220AB

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75 ETC

SSP4N90AJ69Z

 Power Field-Effect Transistor, 4A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 FAIRCHILD

SSP4N90AS

 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4.5A I(D) | TO-220AB

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57 ETC

SSP-4SE103S12G

 4 LAMP POLYLED WITH E10 BASE, 590mm SUPER YELLOW LEDS

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18 LUMEX

SSP-4SE106U12G

 4 LAMP POLYLED WITH E10 BASE, 626mm AllnGaP RED LEDS

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11 LUMEX
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