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SSP6N55A [SAMSUNG]

Power Field-Effect Transistor, 6A I(D), 550V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
SSP6N55A
型号： SSP6N55A
厂家： SAMSUNG    SAMSUNG
描述：

Power Field-Effect Transistor, 6A I(D), 550V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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