SSS4N70 [SAMSUNG]
Power Field-Effect Transistor, 2.3A I(D), 700V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
| 型号： | SSS4N70 |
| 厂家： | 
SAMSUNG SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 2.3A I(D), 700V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网 晶体管 |
| 文件： | 总1页 (文件大小：30K) |
| 下载： | 下载PDF数据表文档文件 |
SSS4N80
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.3A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
142
ETC
SSS4N80A
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.5A I(D) | TO-220FWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
48
ETC
SSS4N80AS
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
76
FAIRCHILD
SSS4N90
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.5A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
80
ETC
SSS4N90A
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.5A I(D) | TO-220FWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
56
ETC
SSS4N90AS
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.8A I(D) | TO-220FWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
162
ETC
SSS500ML
SIEB-U.SCHABLONEN-REIN.SSS500MLWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
27
ETC
SSS50N05
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
10
ETC
SSS50N05
Power Field-Effect Transistor, 30A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
SSS50N05L
Power Field-Effect Transistor, 32A I(D), 50V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
SSS50N06
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
28
ETC
SSS50N06
Power Field-Effect Transistor, 30A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
SSS50N06L
Power Field-Effect Transistor, 32A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
SSS510F
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
CHENDA
SSS5N60A
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
79
FAIRCHILD
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