SSU3055 [SAMSUNG]

Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3;

SSU3055


型号：	SSU3055
厂家：	SAMSUNG
描述：	Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 开关脉冲晶体管
文件：	总1页 (文件大小：28K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

SSU3055A

ADVANCED POWER MOSFET

SAMSUNG

SSU3055L

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251

ETC

SSU3055LA

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-251AA

ETC

SSU3N80A

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.5A I(D) | TO-251AA

ETC

SSU3N90A

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.5A I(D) | TO-251AA

ETC

SSU3N90ATU

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

FAIRCHILD

SSU4N60A

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.8A I(D) | TO-251AA

ETC

SSU4N60B

600V N-Channel MOSFET

FAIRCHILD

SSU4N60BTU

Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

FAIRCHILD

SSU50N10

54A , 100V , RDS(ON) 22m N-Ch Enhancement Mode Power MOSFET

SECOS

SSU90N04-02B

N-Ch Enhancement Mode Power MOSFET

SECOS

SSU90N04-02B_15

N-Ch Enhancement Mode Power MOSFET

SECOS

©2020 ICPDF网联系我们和版权申明