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SSW4N60A [SAMSUNG]

Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3;

SSW4N60A


元器件型号：	SSW4N60A
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 开关脉冲晶体管
PDF文件：	总6页 (文件大小：217K)
下载文档：	下载PDF数据表文档文件
型号参数：SSW4N60A参数

SSW4N60B

600V N-Channel MOSFET

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69 FAIRCHILD

SSW4N60BTM

暂无描述

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0 FAIRCHILD

SSW4N80A

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-263AB

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47 ETC

SSW4N80AS

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.5A I(D) | TO-263AB

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24 ETC

SSW4N80ASTM

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

SSW4N90A

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-263AB

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31 ETC

SSW4N90A

Power Field-Effect Transistor, 4A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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0 SAMSUNG

SSW4N90AS

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4.5A I(D) | TO-263AB

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13 ETC

SSW4N90ATM

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

SSW-507

SPST RF Absorptive Switch

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14 ETC

SSW-508

SPST RF Absorptive Switch

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12 ETC

SSW-508

DC-4 GHz GaAs MMIC SPST Switch

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39 STANFORD

SSW50N05

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 50A I(D) | TO-252VAR

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10 ETC

SSW50N06

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-252VAR

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17 ETC

SSW524

DC - 8 GHZ GAAS MMIC SPST SWITCH

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27 STANFORD

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