CIS41P600 [SAMSUNG]

Chip Bead CIC/CIS Series For High Current; 片式磁珠CIC / CIS系列大电流
CIS41P600
元器件型号: CIS41P600
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

Chip Bead CIC/CIS Series For High Current
片式磁珠CIC / CIS系列大电流

PDF文件: 总10页 (文件大小:937K)
下载文档:  下载PDF数据表文档文件
型号参数:CIS41P600参数

CIS41P600AC

Passive Filter

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0 SAMSUNG

CIS41P600AE

Passive Filter

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0 SAMSUNG

CIS41P600BC

Passive Filter

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0 SAMSUNG

CIS41P600BE

Passive Filter

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0 SAMSUNG

CIS41P600NE

Passive Filter

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0 SAMSUNG

CIS43J121

Chip Bead CIC/CIS Series For High Current

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13 SAMSUNG

CIS43P241

Chip Bead CIC/CIS Series For High Current

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4 SAMSUNG

CIS750

Electric Fuse, Slow Blow, 0.75A, 63VAC, 63VDC, 50A (IR), Surface Mount, ROHS COMPLIANT

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0 BEL

CIS8201-128LQA-C

Interface Circuit, CMOS, PQFP128, 14 X 20 MM, 0.50 MM PITCH, LQFP-128

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1 MICROSEMI

CIS8201-128LQA-C-R

Interface Circuit, CMOS, PQFP128, 14 X 20 MM, 0.50 MM PITCH, LQFP-128

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2 MICROSEMI

CIS8201-BKC

Interface Circuit, CMOS, PBGA100, 11 X 11 MM, 1 MM PITCH, LBGA-100

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0 MICROSEMI

CIS8201-BKCR

Interface Circuit, CMOS, PBGA100, 11 X 11 MM, 1 MM PITCH, LBGA-100

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0 MICROSEMI

CIS8204-388BGA-C

Interface Circuit, CMOS, PBGA388, 35 X 35 MM, 2.33 MM HEIGHT, HSBGA-388

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1 VITESSE

CIS8204-388BGA-CR

Interface Circuit, CMOS, PBGA388, 35 X 35 MM, 2.33 MM HEIGHT, HSBGA-388

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1 VITESSE

CIS8204-388BGB-C

Interface Circuit, CMOS, PBGA388, 27 X 27 MM, 2.23 MM HEIGHT, HSBGA-388

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8 VITESSE