DS_K6F4016U6G [SAMSUNG]

256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM; 256Kx16位超低功耗和低电压全CMOS静态RAM
DS_K6F4016U6G
元器件型号: DS_K6F4016U6G
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256Kx16位超低功耗和低电压全CMOS静态RAM

PDF文件: 总9页 (文件大小:182K)
下载文档:  下载PDF数据表文档文件
型号参数:DS_K6F4016U6G参数

DS_K6F8016U6B

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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2 SAMSUNG

DS_K6F8016U6B

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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20 SAMSUNG

DS_K6F8016U6C

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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1 SAMSUNG

DS_K6F8016U6C

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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18 SAMSUNG

DS_K6X8008C2B

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

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18 SAMSUNG

DS_K6X8008C2B

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

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3 SAMSUNG

DS_K6X8008TBN

CMOS SRAM

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12 SAMSUNG

DS_K6X8008TBN

CMOS SRAM

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3 SAMSUNG

DS_K6X8016C3B

64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

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20 SAMSUNG

DS_K6X8016C3B

64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

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4 SAMSUNG

DS_K7A803600B

256Kx36 & 512Kx18 Synchronous SRAM

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9 SAMSUNG

DS_K7A803600B

256Kx36 & 512Kx18 Synchronous SRAM

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4 SAMSUNG

DS_K7B803625B

256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

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23 SAMSUNG

DS_K7B803625B

256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

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5 SAMSUNG

DS_K7M323625M

1Mx36 & 2Mx18 Flow-Through NtRAM

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29 SAMSUNG