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FMB857B [SAMSUNG]

256Mb F-die DDR SDRAM Specification; 256Mb的F-死DDR SDRAM规格
FMB857B
元器件型号： FMB857B
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

256Mb F-die DDR SDRAM Specification
256Mb的F-死DDR SDRAM规格

动态存储器 双倍数据速率
PDF文件： 总23页 (文件大小：330K)
下载文档：  下载PDF数据表文档文件
型号参数：FMB857B参数
 查看货源

FMB-90.064583MHZ-LNM00030

 Series - 3Rd Overtone Quartz Crystal, 90.064583MHz Nom, LEAD FREE, CERAMIC, SMD, 4 PIN

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0 FOX

FMB-90.064583MHZ-LNM00030

 Series - 3Rd Overtone Quartz Crystal, 90.064583MHz Nom, LEAD FREE, CERAMIC, SMD, 4 PIN

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0 FOX

FMBA06

 NPN Multi-Chip General Purpose Amplifier

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29 FAIRCHILD

FMBA0656

 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package

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33 FAIRCHILD

FMBA0656D87Z

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA0656L99Z

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA0656S62Z

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA06D84Z

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA06D87Z

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA14

 NPN Multi-Chip Darlington Transistor

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24 FAIRCHILD

FMBA14D84Z

 Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA14S62Z

 Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA56

 PNP Multi-Chip General Purpose Amplifier

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23 FAIRCHILD

FMBA56D84Z

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSOT-6

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0 FAIRCHILD

FMBA56D87Z

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSOT-6

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0 FAIRCHILD
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