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IRF121 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET

IRF121


元器件型号：	IRF121
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	N-CHANNEL POWER MOSFETS N沟道功率MOSFET
PDF文件：	总5页 (文件大小：217K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF121参数

IRF122

N-Channel Power MOSFETs, 11 A, 60-100 V

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75 FAIRCHILD

IRF122

N-CHANNEL POWER MOSFETS

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44 SAMSUNG

IRF122

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

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61 INTERSIL

IRF122

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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2 IRF

IRF-122+/-10%

General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-122+/-10%

General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-1220UH+-10%ESE2

General Purpose Inductor, 220uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-1220UH+-10%ESE2

General Purpose Inductor, 220uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-1220UH+-5%ERE2

General Purpose Inductor, 220uH, 5%, Ferrite-Core,

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0 VISHAY

IRF-12210%

General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR

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0 VISHAY

IRF-122UH+-10%ERE2

General Purpose Inductor, 22uH, 10%, Ferrite-Core,

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1 VISHAY

IRF-122UH+-10%ERE2

General Purpose Inductor, 22uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-122UH+-5%EBE2

General Purpose Inductor, 22uH, 5%, Ferrite-Core,

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0 VISHAY

IRF-122UH+-5%EBE2

General Purpose Inductor, 22uH, 5%, Ferrite-Core,

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0 VISHAY

IRF-122UH+-5%ERE2

General Purpose Inductor, 22uH, 5%, Ferrite-Core,

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0 VISHAY

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