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IRF143 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
IRF143
元器件型号： IRF143
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

N-CHANNEL POWER MOSFETS
N沟道功率MOSFET

晶体 晶体管 开关 脉冲 局域网
PDF文件： 总5页 (文件大小：215K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF143参数
 查看货源

IRF143R

 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 25A I(D) | TO-204AE

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16 ETC

IRF-147UH+/-10%

 General Fixed Inductor, 1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-15.6UH+-10%EBE2

 General Purpose Inductor, 5.6uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-15.6UH+-10%ESE2

 General Purpose Inductor, 5.6uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-15.6UH+-5%EBE2

 General Purpose Inductor, 5.6uH, 5%, Ferrite-Core,

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0 VISHAY

IRF-15.6UH+-5%ERE2

 General Purpose Inductor, 5.6uH, 5%, Ferrite-Core,

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0 VISHAY

IRF150

 N-CHANNEL POWER MOSFETS

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461 SAMSUNG

IRF150

 N-CHANNEL POWER MOSFET

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139 SEME-LAB

IRF150

 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET

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347 INTERSIL

IRF150

 TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

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514 IRF

IRF150

 N-Channel Power MOSFETs, 40 A, 60 V/100 V

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315 FAIRCHILD

IRF150

 HIGH VOLTAGE POWER MOSFET DIE

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143 IXYS

IRF150

 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

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1387 ETC

IRF150

 HIGH VOLTAGE POWER MOSFET DIE

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378 IXYS

IRF150

 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

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7 IRF
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