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IRF242 [SAMSUNG]

N-CHANNEL POWER MOSFET; N沟道功率MOSFET

IRF242


元器件型号：	IRF242
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	N-CHANNEL POWER MOSFET N沟道功率MOSFET
PDF文件：	总5页 (文件大小：215K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF242参数

IRF-242.2UH+/-10%

General Fixed Inductor, 1 ELEMENT, 2.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-242.2UH+-10%ERE3

General Purpose Inductor, 2.2uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-242.2UH+-10%ERE3

General Purpose Inductor, 2.2uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-242.2UH+-5%ERE3

General Purpose Inductor, 2.2uH, 5%, Ferrite-Core,

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0 VISHAY

IRF-24220UH+/-10%

General Fixed Inductor, 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-24220UH+-10%ERE3

General Purpose Inductor, 220uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-24220UH+-10%ERE3

General Purpose Inductor, 220uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-2422UH+/-5%

General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF242R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 16A I(D) | TO-204AE

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26 ETC

IRF242R

16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

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0 RENESAS

IRF243

N-Channel Power MOSFETs, 18A, 150-200V

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49 FAIRCHILD

IRF243

N-CHANNEL POWER MOSFET

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65 SAMSUNG

IRF243

16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

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0 RENESAS

IRF243

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204,

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1 VISHAY

IRF-243.9UH+-5%ERE3

General Purpose Inductor, 3.9uH, 5%, Ferrite-Core,

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0 VISHAY

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