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元器件品牌
IRF251
[SAMSUNG]
N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
元器件型号:
IRF251
生产厂家:
SAMSUNG SEMICONDUCTOR
描述和应用:
N-CHANNEL POWER MOSFETS
N沟道功率MOSFET
晶体 晶体管 功率场效应晶体管
PDF文件:
总5页 (文件大小:219K)
下载文档:
下载PDF数据表文档文件
型号参数:IRF251参数
查看货源
IRF251R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 30A I(D) | TO-204AE
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156
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37
ETC
IRF252
N-CHANNEL POWER MOSFETS
Warning
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156
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103
SAMSUNG
IRF252
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
Warning
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156
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33
IXYS
IRF2525
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-220AB
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56
ETC
IRF252R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-204AE
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156
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20
ETC
IRF253
N-CHANNEL POWER MOSFETS
Warning
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156
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104
SAMSUNG
IRF253
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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26
IXYS
IRF253
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
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1
VISHAY
IRF253R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 25A I(D) | TO-204AE
Warning
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on line
156
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13
ETC
IRF254
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 22A I(D) | TO-204AE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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92
ETC
IRF254
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
80
IXYS
IRF254
Power Field-Effect Transistor, 22A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Warning
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on line
156
-
3
IRF
IRF255
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-204AA
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on line
156
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55
ETC
IRF256
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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25
ETC
IRF256R
IRF256R
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
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