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IRF332 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET

IRF332


元器件型号：	IRF332
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	N-CHANNEL POWER MOSFETS N沟道功率MOSFET
PDF文件：	总5页 (文件大小：213K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF332参数

IRF332R

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA

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11 ETC

IRF333

N-Channel Power MOSFETs, 5.5A, 350 V/400V

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24 FAIRCHILD

IRF333

N-CHANNEL POWER MOSFETS

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35 SAMSUNG

IRF333

Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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0 VISHAY

IRF-333+/-10%

General Fixed Inductor, 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-333+/-10%

General Fixed Inductor, 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-3330+/-10%

General Fixed Inductor, 1 ELEMENT, 330 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-3330UH+-5%ESE2

General Purpose Inductor, 330uH, 5%, Ferrite-Core,

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0 VISHAY

IRF-33310%

General Fixed Inductor, 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR

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0 VISHAY

IRF333R

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA

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9 ETC

IRF-339+/-10%

General Fixed Inductor, 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-339UH+-10%ESE2

General Purpose Inductor, 39uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-34.7UH+-10%EVE2

General Purpose Inductor, 4.7uH, 10%, Ferrite-Core,

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0 VISHAY

IRF340

N-CHANNEL POWER MOSFETS

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86 SAMSUNG

IRF340

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)0.55ohm, Id=10A)

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172 IRF

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