IRF342 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET

IRF342


型号：	IRF342
厂家：	SAMSUNG SEMICONDUCTOR
描述：	N-CHANNEL POWER MOSFETS N沟道功率MOSFET
文件：	总5页 (文件大小：216K)
下载：	下载PDF数据表文档文件

IRF342R

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.3A I(D) | TO-204AA

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13 ETC

IRF343

N-Channel Power MOSFETs, 10A, 350V/400V

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28 FAIRCHILD

IRF343

N-CHANNEL POWER MOSFETS

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48 SAMSUNG

IRF343

Power Field-Effect Transistor, 8A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204,

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0 VISHAY

IRF343R

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.3A I(D) | TO-204AA

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11 ETC

IRF343R

TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,8.3A I(D),TO-204AA

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0 RENESAS

IRF-3470UH+-10%ESE2

General Purpose Inductor, 470uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-3470UH+-10%EVE2

General Purpose Inductor, 470uH, 10%, Ferrite-Core,

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0 VISHAY

IRF350

N-CHANNEL POWER MOSFETS

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560 SAMSUNG

IRF350

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

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100 INTERSIL

IRF350

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

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222 IRF

IRF350

N-Channel Power MOSFETs, 15A, 350V/400V

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253 FAIRCHILD

IRF350

N-CHANNEL POWER MOSFET

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87 SEME-LAB

IRF350

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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16 VISHAY

IRF350-353

N-Channel Power MOSFETs, 15A, 350V/400V

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87 FAIRCHILD

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